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In-Hwan Lee

In-Hwan Lee

D-Index & Metrics

Discipline name D-Index World Ranking Current World Ranking National Ranking Current National Ranking Publications Citations
Engineering and Technology 41 6948 6706 183 183 302 7035

In-Hwan Lee publications per year

The chart shows the history of publications by In-Hwan Lee between 1997 and 2025, highlighting the no. of papers published in each year and offering an overview of the publication velocity of this scholar. In-Hwan Lee published across 29 years, from 1997 to 2025, averaging 11.3 papers a year. Output peaked at 27 publications in 2021. 31 of the 327 publications appeared in the last two years.

No. of publications
5 10 15 20 25
Bar chart. Horizontal axis: year, 1997 to 2025. Vertical axis: number of publications, 0 to 27. Peak 27 publications in 2021. 1997: 5 publications 1998: 2 publications 1999: 3 publications 2000: 4 publications 2001: 2 publications 2002: 7 publications 2003: 3 publications 2004: 5 publications 2005: 3 publications 2006: 6 publications 2007: 16 publications 2008: 16 publications 2009: 17 publications 2010: 11 publications 2011: 16 publications 2012: 15 publications 2013: 13 publications 2014: 17 publications 2015: 11 publications 2016: 18 publications 2017: 13 publications 2018: 13 publications 2019: 15 publications 2020: 7 publications 2021: 27 publications 2022: 13 publications 2023: 18 publications 2024: 19 publications 2025: 12 publications
1997 2025

327 publications in total across all disciplines

View publications per year as a table
In-Hwan Lee: publications per year, 1997 to 2025
Year Publications
1997 5
1998 2
1999 3
2000 4
2001 2
2002 7
2003 3
2004 5
2005 3
2006 6
2007 16
2008 16
2009 17
2010 11
2011 16
2012 15
2013 13
2014 17
2015 11
2016 18
2017 13
2018 13
2019 15
2020 7
2021 27
2022 13
2023 18
2024 19
2025 12
Total 327
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In-Hwan Lee publication distribution in Engineering and Technology in 2026

The chart shows the distribution of publications by all Research.com ranked scientists in the field of Engineering and Technology in 2026. The highlighted bar marks where In-Hwan Lee sits on this spectrum.

No. of scientists
100 200 300 400
Bar chart with 78 bars. Horizontal axis: publications, 38–47 to 804+. Vertical axis: number of scientists, 0 to 457. Most scientists, 457, have 148–157 publications. The last bar groups every scientist with 804 publications or more. The highlighted bar, 298–307 publications, is where this scientist sits. 38–47 publications: 20 scientists 48–57 publications: 35 scientists 58–67 publications: 96 scientists 68–77 publications: 135 scientists 78–87 publications: 190 scientists 88–97 publications: 259 scientists 98–107 publications: 283 scientists 108–117 publications: 369 scientists 118–127 publications: 341 scientists 128–137 publications: 386 scientists 138–147 publications: 372 scientists 148–157 publications: 457 scientists 158–167 publications: 415 scientists 168–177 publications: 407 scientists 178–187 publications: 421 scientists 188–197 publications: 378 scientists 198–207 publications: 403 scientists 208–217 publications: 317 scientists 218–227 publications: 346 scientists 228–237 publications: 321 scientists 238–247 publications: 260 scientists 248–257 publications: 280 scientists 258–267 publications: 240 scientists 268–277 publications: 214 scientists 278–287 publications: 242 scientists 288–297 publications: 203 scientists 298–307 publications: 166 scientists 308–317 publications: 154 scientists 318–327 publications: 175 scientists 328–337 publications: 159 scientists 338–347 publications: 99 scientists 348–357 publications: 131 scientists 358–367 publications: 106 scientists 368–377 publications: 118 scientists 378–387 publications: 97 scientists 388–397 publications: 108 scientists 398–407 publications: 82 scientists 408–417 publications: 71 scientists 418–427 publications: 64 scientists 428–437 publications: 55 scientists 438–447 publications: 54 scientists 448–457 publications: 60 scientists 458–467 publications: 47 scientists 468–477 publications: 40 scientists 478–487 publications: 30 scientists 488–497 publications: 29 scientists 498–507 publications: 38 scientists 508–517 publications: 40 scientists 518–527 publications: 32 scientists 528–537 publications: 23 scientists 538–547 publications: 28 scientists 548–557 publications: 23 scientists 558–567 publications: 19 scientists 568–577 publications: 16 scientists 578–587 publications: 17 scientists 588–597 publications: 18 scientists 598–607 publications: 22 scientists 608–617 publications: 15 scientists 618–627 publications: 9 scientists 628–637 publications: 11 scientists 638–647 publications: 21 scientists 648–657 publications: 12 scientists 658–667 publications: 9 scientists 668–677 publications: 11 scientists 678–687 publications: 9 scientists 688–697 publications: 6 scientists 698–707 publications: 14 scientists 708–717 publications: 7 scientists 718–727 publications: 8 scientists 728–737 publications: 10 scientists 738–747 publications: 9 scientists 748–757 publications: 5 scientists 758–767 publications: 5 scientists 768–777 publications: 11 scientists 778–787 publications: 7 scientists 788–797 publications: 2 scientists 798–803 publications: 4 scientists 804+ publications: 100 scientists
38–47 publications 804+

This scientist: 302 publications — 76th percentile

76% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 804 publications or more.

View publications distribution as a table
Number of Engineering and Technology scientists by publication count, Research.com 2026 ranking edition. Based on 9,796 ranked scientists.
Publications Scientists This scientist
38–47 20
48–57 35
58–67 96
68–77 135
78–87 190
88–97 259
98–107 283
108–117 369
118–127 341
128–137 386
138–147 372
148–157 457
158–167 415
168–177 407
178–187 421
188–197 378
198–207 403
208–217 317
218–227 346
228–237 321
238–247 260
248–257 280
258–267 240
268–277 214
278–287 242
288–297 203
298–307 166 302
308–317 154
318–327 175
328–337 159
338–347 99
348–357 131
358–367 106
368–377 118
378–387 97
388–397 108
398–407 82
408–417 71
418–427 64
428–437 55
438–447 54
448–457 60
458–467 47
468–477 40
478–487 30
488–497 29
498–507 38
508–517 40
518–527 32
528–537 23
538–547 28
548–557 23
558–567 19
568–577 16
578–587 17
588–597 18
598–607 22
608–617 15
618–627 9
628–637 11
638–647 21
648–657 12
658–667 9
668–677 11
678–687 9
688–697 6
698–707 14
708–717 7
718–727 8
728–737 10
738–747 9
748–757 5
758–767 5
768–777 11
778–787 7
788–797 2
798–803 4
804+ 100
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In-Hwan Lee D-index placement in Engineering and Technology in 2026

The chart shows the D-index (discipline H-index) distribution of Engineering and Technology scientists ranked by Research.com in 2026. The highlighted bar marks where In-Hwan Lee sits on this spectrum.

No. of scientists
100 200 300 400
Bar chart with 78 bars. Horizontal axis: D-Index, 30 to 107+. Vertical axis: number of scientists, 0 to 426. Most scientists, 426, have 42 D-Index. The last bar groups every scientist with 107 D-Index or more. The highlighted bar, 41 D-Index, is where this scientist sits. 30 D-Index: 59 scientists 31 D-Index: 114 scientists 32 D-Index: 129 scientists 33 D-Index: 189 scientists 34 D-Index: 200 scientists 35 D-Index: 262 scientists 36 D-Index: 311 scientists 37 D-Index: 312 scientists 38 D-Index: 350 scientists 39 D-Index: 385 scientists 40 D-Index: 348 scientists 41 D-Index: 362 scientists 42 D-Index: 426 scientists 43 D-Index: 380 scientists 44 D-Index: 310 scientists 45 D-Index: 341 scientists 46 D-Index: 301 scientists 47 D-Index: 306 scientists 48 D-Index: 271 scientists 49 D-Index: 246 scientists 50 D-Index: 210 scientists 51 D-Index: 253 scientists 52 D-Index: 213 scientists 53 D-Index: 221 scientists 54 D-Index: 195 scientists 55 D-Index: 186 scientists 56 D-Index: 170 scientists 57 D-Index: 167 scientists 58 D-Index: 166 scientists 59 D-Index: 144 scientists 60 D-Index: 152 scientists 61 D-Index: 141 scientists 62 D-Index: 138 scientists 63 D-Index: 131 scientists 64 D-Index: 118 scientists 65 D-Index: 114 scientists 66 D-Index: 119 scientists 67 D-Index: 95 scientists 68 D-Index: 87 scientists 69 D-Index: 77 scientists 70 D-Index: 89 scientists 71 D-Index: 69 scientists 72 D-Index: 54 scientists 73 D-Index: 46 scientists 74 D-Index: 55 scientists 75 D-Index: 54 scientists 76 D-Index: 49 scientists 77 D-Index: 53 scientists 78 D-Index: 46 scientists 79 D-Index: 28 scientists 80 D-Index: 39 scientists 81 D-Index: 36 scientists 82 D-Index: 24 scientists 83 D-Index: 26 scientists 84 D-Index: 36 scientists 85 D-Index: 18 scientists 86 D-Index: 25 scientists 87 D-Index: 19 scientists 88 D-Index: 26 scientists 89 D-Index: 27 scientists 90 D-Index: 23 scientists 91 D-Index: 15 scientists 92 D-Index: 12 scientists 93 D-Index: 9 scientists 94 D-Index: 15 scientists 95 D-Index: 10 scientists 96 D-Index: 13 scientists 97 D-Index: 13 scientists 98 D-Index: 9 scientists 99 D-Index: 7 scientists 100 D-Index: 7 scientists 101 D-Index: 8 scientists 102 D-Index: 7 scientists 103 D-Index: 7 scientists 104 D-Index: 9 scientists 105 D-Index: 6 scientists 106 D-Index: 9 scientists 107+ D-Index: 99 scientists
30 D-Index 107+

This scientist: 41 D-Index — 31st percentile

31% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 107 D-Index or more.

View D-Index distribution as a table
Number of Engineering and Technology scientists by D-index, Research.com 2026 ranking edition. Based on 9,796 ranked scientists.
D-Index Scientists This scientist
30 59
31 114
32 129
33 189
34 200
35 262
36 311
37 312
38 350
39 385
40 348
41 362 41
42 426
43 380
44 310
45 341
46 301
47 306
48 271
49 246
50 210
51 253
52 213
53 221
54 195
55 186
56 170
57 167
58 166
59 144
60 152
61 141
62 138
63 131
64 118
65 114
66 119
67 95
68 87
69 77
70 89
71 69
72 54
73 46
74 55
75 54
76 49
77 53
78 46
79 28
80 39
81 36
82 24
83 26
84 36
85 18
86 25
87 19
88 26
89 27
90 23
91 15
92 12
93 9
94 15
95 10
96 13
97 13
98 9
99 7
100 7
101 8
102 7
103 7
104 9
105 6
106 9
107+ 99
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Overview

In-Hwan Lee is affiliated with Korea University in South Korea and has a strong research presence in materials science and engineering. Their publications predominantly focus on advanced photocatalysis techniques, semiconductor materials, and nanomaterials with applications in energy and sensing technologies.

The scientist's research encompasses several main fields of study, including:

  • Materials Science
  • Engineering

Within these fields, the key subfields of study covered are:

  • Materials Chemistry
  • Renewable Energy, Sustainability and the Environment
  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials
  • Biomedical Engineering

Central research topics explored by In-Hwan Lee include:

  • Advanced Photocatalysis Techniques
  • ZnO doping and properties
  • Ga2O3 and related materials
  • GaN-based semiconductor devices and materials
  • Electrocatalysts for Energy Conversion
  • Copper-based nanomaterials and applications
  • Nanowire Synthesis and Applications

Prominent frequent coauthors collaborating with this researcher are:

  • Periyayya Uthirakumar
  • Dung Van Dao
  • A. Y. Polyakov
  • S. J. Pearton
  • Taehwan Kim

In-Hwan Lee has published extensively in several key venues, including:

  • Journal of Alloys and Compounds
  • SSRN Electronic Journal
  • Applied Surface Science
  • Ceramics International
  • Journal of Materials Chemistry A

Representative recent papers illustrate the focus of Lee's work, such as:

  • Insightful understanding of hot-carrier generation and transfer in plasmonic Au@CeO2 core-shell photocatalysts for light-driven hydrogen evolution improvement, 2021, Applied Catalysis B: Environmental
  • Fabrication of flexible sheets of Cu/CuO/Cu2O heterojunction nanodisks: A dominant performance of multiple photocatalytic sheets under natural sunlight, 2020, Materials Science and Engineering B
  • Effect of core and surface area toward hydrogen gas sensing performance using Pd@ZnO core-shell nanoparticles, 2020, Journal of Colloid and Interface Science
  • Synergistic SERS Enhancement in GaN-Ag Hybrid System toward Label-Free and Multiplexed Detection of Antibiotics in Aqueous Solutions, 2021, Advanced Science
  • Superhigh sensing response and selectivity for hydrogen gas using PdPt@ZnO core-shell nanoparticles: Unique effect of alloyed ingredient from experimental and theoretical investigations, 2021, Sensors and Actuators B Chemical

Best Publications

  • Deep traps in GaN-based structures as affecting the performance of GaN devices

    Alexander Y. Polyakov;In-Hwan Lee

  • Au@NiO core-shell nanoparticles as a p-type gas sensor: Novel synthesis, characterization, and their gas sensing properties with sensing mechanism

    Sanjit Manohar Majhi;Sanjit Manohar Majhi;Gautam Kumar Naik;Hu Jun Lee;Ho Geun Song

  • Dry etch damage in n-type GaN and its recovery by treatment with an N2 plasma

    Ji Myon Lee;Ki Myung Chang;Sang Woo Kim;Chul Huh

  • Au@Cu2O core-shell nanoparticles as chemiresistors for gas sensor applications: effect of potential barrier modulation on the sensing performance.

    Prabhakar Rai;Rizwan Khan;Sudarsan Raj;Sanjit Manohar Majhi

  • Highly efficient degradation of dyes by carbon quantum dots/N-doped zinc oxide (CQD/N-ZnO) photocatalyst and its compatibility on three different commercial dyes under daylight.

    S. Muthulingam;In Hwan Lee;Periyayya Uthirakumar;Periyayya Uthirakumar

  • Understanding nonpolar GaN growth through kinetic Wulff plots

    Qian Sun;Christopher D. Yerino;Tsung Shine Ko;Yong Suk Cho

  • Glucose-assisted synthesis of Cu2O shuriken-like nanostructures and their application as nonenzymatic glucose biosensors

    Rizwan Khan;Rafiq Ahmad;Prabhakar Rai;Lee Woon Jang

  • Band-gap narrowing and potential fluctuation in Si-doped GaN

    In Hwan Lee;J. J. Lee;P. Kung;F. J. Sanchez

  • Stress relaxation in Si-doped GaN studied by Raman spectroscopy

    In Hwan Lee;In Hoon Choi;Cheul Ro Lee;Eun Joo Shin

  • Low-Temperature Solution-Processed SnO2 Nanoparticles as a Cathode Buffer Layer for Inverted Organic Solar Cells.

    Van Huong Tran;Rohan B. Ambade;Swapnil B. Ambade;Soo Hyoung Lee

  • Nitrogen-polar GaN growth evolution on c-plane sapphire

    Q. Sun;Y. S. Cho;I.-H. Lee;I.-H. Lee;J. Han

  • Effect of annealing temperature on optical band-gap of amorphous indium zinc oxide film

    Ju Won Jeon;Dae Woo Jeon;Trilochan Sahoo;Myoung Kim

  • Fast neutron irradiation effects in n-GaN

    A. Y. Polyakov;N. B. Smirnov;A. V. Govorkov;A. V. Markov

  • Hydrothermal synthesis of In2O3 nanocubes for highly responsive and selective ethanol gas sensing

    Thuy T.D. Nguyen;Ha Nui Choi;M. Jamir Ahemad;Dung Van Dao;Dung Van Dao

  • N-face GaN growth on c-plane sapphire by metalorganic chemical vapor deposition

    Qian Sun;Yong Suk Cho;Bo Hyun Kong;Hyung Koun Cho

  • Deep level transient spectroscopy in III-Nitrides: Decreasing the effects of series resistance

    Alexander Y. Polyakov;Nikolai B. Smirnov;In-Hwan Lee;Stephen J. Pearton

  • Reduction of stacking fault density in m-plane GaN grown on SiC

    Y. S. Cho;Q. Sun;I.-H. Lee;I.-H. Lee;T.-S. Ko

  • Insightful understanding of hot-carrier generation and transfer in plasmonic Au@CeO2 core–shell photocatalysts for light-driven hydrogen evolution improvement

    Dung Van Dao;Dung Van Dao;Thuy T.D. Nguyen;Periyayya Uthirakumar;Periyayya Uthirakumar;Yeong Hoon Cho

  • Investigation of Optical and Structural Stability of Localized Surface Plasmon Mediated Light‐Emitting Diodes by Ag and Ag/SiO2 Nanoparticles

    Lee Woon Jang;Dae Woo Jeon;Myoung Kim;Ju Won Jeon

  • Improved hydrogen detection sensitivity in N-polar GaN Schottky diodes

    Yu Lin Wang;F. Ren;U. Zhang;Q. Sun

  • Characteristics comparison between GaN epilayers grown on patterned and unpatterned sapphire substrate (0 0 0 1)

    Jae Chul Song;Seon Ho Lee;In Hwan Lee;Kyeong Won Seol

  • Fabrication of flexible sheets of Cu/CuO/Cu2O heterojunction nanodisks: A dominant performance of multiple photocatalytic sheets under natural sunlight

    Periyayya Uthirakumar;Periyayya Uthirakumar;M. Devendiran;Tae Hwan Kim;S. Kalaiarasan

  • Spatial variations of doping and lifetime in epitaxial laterally overgrown GaN

    E. B. Yakimov;P. S. Vergeles;A. Y. Polyakov;N. B. Smirnov

  • Carbon quantum dots decorated N-doped ZnO: Synthesis and enhanced photocatalytic activity on UV, visible and daylight sources with suppressed photocorrosion

    S. Muthulingam;Kang Bin Bae;Rizwan Khan;In Hwan Lee

  • Effect of core and surface area toward hydrogen gas sensing performance using Pd@ZnO core-shell nanoparticles

    Thuy T.D. Nguyen;Dung Van Dao;Dong Seog Kim;Hu Jun Lee

  • Fabrication of flower-like ZnO microstructures from ZnO nanorods and their photoluminescence properties

    Prabhakar Rai;Jin Nyeong Jo;In Hwan Lee;Yeon Tae Yu

  • Effect of Controlled Growth Dynamics on the Microstructure of Nonpolar a-Plane GaN Revealed by X-ray Diffraction

    Qian Sun;Tsung Shine Ko;Tsung Shine Ko;Christopher D. Yerino;Yu Zhang

  • Performance enhancement of GaN-based light emitting diodes by the interaction with localized surface plasmons

    In Hwan Lee;Lee Woon Jang;Alexander Y. Polyakov;Alexander Y. Polyakov

Frequent Co-Authors

A. Y. Polyakov
A. Y. Polyakov National University of Science and Technology
Stephen J. Pearton
Stephen J. Pearton University of Florida
Yeon-Tae Yu
Yeon-Tae Yu Jeonbuk National University
Hilmi Volkan Demir
Hilmi Volkan Demir Bilkent University
Jung Han
Jung Han Yale University
Qian Sun
Qian Sun Chinese Academy of Sciences
Seong-Ju Park
Seong-Ju Park Gwangju Institute of Science and Technology
Fan Ren
Fan Ren University of Florida
Hyung Koun Cho
Hyung Koun Cho Sungkyunkwan University
Sang-Woo Kim
Sang-Woo Kim Yonsei University

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