D-Index & Metrics Best Publications

D-Index & Metrics D-index (Discipline H-index) only includes papers and citation values for an examined discipline in contrast to General H-index which accounts for publications across all disciplines.

Discipline name D-index D-index (Discipline H-index) only includes papers and citation values for an examined discipline in contrast to General H-index which accounts for publications across all disciplines. Citations Publications World Ranking National Ranking
Engineering and Technology D-index 56 Citations 12,477 419 World Ranking 1376 National Ranking 10
Materials Science D-index 59 Citations 13,143 442 World Ranking 4528 National Ranking 162

Overview

What is he best known for?

The fields of study he is best known for:

  • Quantum mechanics
  • Semiconductor
  • Electron

Jihyun Kim spends much of his time researching Optoelectronics, Wide-bandgap semiconductor, Transistor, Analytical chemistry and Diode. His Optoelectronics research is multidisciplinary, relying on both Field-effect transistor and Breakdown voltage. His Wide-bandgap semiconductor research is multidisciplinary, incorporating elements of Radiation hardening, Irradiation, Thin film and Gate dielectric.

The study incorporates disciplines such as Condensed matter physics, Ferromagnetism, Optics and Polymer in addition to Thin film. His Analytical chemistry research incorporates themes from Molecular beam epitaxy, Magnetic semiconductor, High-electron-mobility transistor and Forward current. Jihyun Kim usually deals with Diode and limits it to topics linked to Crystallographic defect and Molecular physics.

His most cited work include:

  • Wide band gap ferromagnetic semiconductors and oxides (894 citations)
  • A review of Ga2O3 materials, processing, and devices (634 citations)
  • Magnetic properties of n-GaMnN thin films (299 citations)

What are the main themes of his work throughout his whole career to date?

His primary scientific interests are in Optoelectronics, Analytical chemistry, Wide-bandgap semiconductor, Transistor and Irradiation. His study ties his expertise on Thin film together with the subject of Optoelectronics. Jihyun Kim studied Thin film and Layer that intersect with Graphene.

His Analytical chemistry research incorporates elements of Spectroscopy and Molecular beam epitaxy. Jihyun Kim has included themes like Transconductance and Proton in his Irradiation study. His research in Light-emitting diode intersects with topics in Gallium nitride and Electroluminescence.

He most often published in these fields:

  • Optoelectronics (55.15%)
  • Analytical chemistry (13.74%)
  • Wide-bandgap semiconductor (12.53%)

What were the highlights of his more recent work (between 2018-2021)?

  • Optoelectronics (55.15%)
  • Band gap (5.86%)
  • Semiconductor (6.46%)

In recent papers he was focusing on the following fields of study:

Jihyun Kim mainly focuses on Optoelectronics, Band gap, Semiconductor, Field-effect transistor and Heterojunction. His Optoelectronics research includes elements of Gallium oxide, Transistor and Semiconductor device. Threshold voltage is closely connected to Electronics in his research, which is encompassed under the umbrella topic of Transistor.

The various areas that he examines in his Band gap study include Photodiode, Photodetector, Responsivity, Ultraviolet and Graphene. His Semiconductor study combines topics in areas such as Etching, Diode and Fabrication. His Field-effect transistor study integrates concerns from other disciplines, such as Schottky barrier and Modulation.

Between 2018 and 2021, his most popular works were:

  • Radiation damage effects in Ga2O3 materials and devices (44 citations)
  • Ultrahigh Deep-UV Sensitivity in Graphene-Gated β-Ga2O3 Phototransistors (20 citations)
  • Polybenzimidazole membranes functionalised with 1-methyl-2-mesitylbenzimidazolium ions via a hexyl linker for use in vanadium flow batteries (13 citations)

In his most recent research, the most cited papers focused on:

  • Quantum mechanics
  • Semiconductor
  • Electron

Jihyun Kim focuses on Optoelectronics, Field-effect transistor, Band gap, Heterojunction and Electronics. His biological study spans a wide range of topics, including Transistor and Gamma ray. His Gamma ray research integrates issues from Radiation hardening, Wide-bandgap semiconductor, Electron and Ultraviolet.

Jihyun Kim combines subjects such as Polarization, Fermi gas, Irradiation and Saturation current with his study of Field-effect transistor. His studies deal with areas such as Gallium oxide, Photodiode and Radiation damage as well as Band gap. His study in Heterojunction is interdisciplinary in nature, drawing from both Memristor, Bipolar junction transistor, Neuromorphic engineering, Van der waals heterostructures and p–n junction.

This overview was generated by a machine learning system which analysed the scientist’s body of work. If you have any feedback, you can contact us here.

Best Publications

A review of Ga2O3 materials, processing, and devices

S. J. Pearton;Jiancheng Yang;Patrick H. Cary;F. Ren.
Applied physics reviews (2018)

1399 Citations

Wide band gap ferromagnetic semiconductors and oxides

S. J. Pearton;C. R. Abernathy;M. E. Overberg;G. T. Thaler.
Journal of Applied Physics (2003)

1186 Citations

Magnetic properties of n-GaMnN thin films

G. T. Thaler;M. E. Overberg;B. Gila;R. Frazier.
Applied Physics Letters (2002)

451 Citations

Graphene-based nitrogen dioxide gas sensors

G. Ko;H.-Y. Kim;J. Ahn;Y.-M. Park.
Current Applied Physics (2010)

344 Citations

Perspective—Opportunities and Future Directions for Ga2O3

Michael A. Mastro;Akito Kuramata;Jacob Calkins;Jihyun Kim.
ECS Journal of Solid State Science and Technology (2017)

323 Citations

Perspective: Ga2O3 for ultra-high power rectifiers and MOSFETS

Stephen J. Pearton;Fan Ren;Marko Tadjer;Jihyun Kim.
Journal of Applied Physics (2018)

320 Citations

Large-scale genome-wide association studies in East Asians identify new genetic loci influencing metabolic traits.

Young Jin Kim;Min Jin Go;Cheng Hu;Chang Bum Hong.
Nature Genetics (2011)

281 Citations

Influence of MgO and Sc2O3 passivation on AlGaN/GaN high-electron-mobility transistors

B. Luo;J. W. Johnson;J. Kim;R. M. Mehandru.
Applied Physics Letters (2002)

215 Citations

Review of radiation damage in GaN-based materials and devices

Stephen J. Pearton;Richard Deist;Fan Ren;Lu Liu.
Journal of Vacuum Science and Technology (2013)

194 Citations

Radiation effects in GaN materials and devices

Alexander Y. Polyakov;S. J. Pearton;Patrick Frenzer;Fan Ren.
Journal of Materials Chemistry C (2013)

174 Citations

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