World's Best Scientists 2026 revealed!

D-Index & Metrics

Materials Science

D-Index
68
Citations
23066
World Ranking
4759
National Ranking
175

Engineering and Technology

D-Index
66
Citations
21871
World Ranking
1378
National Ranking
19

Overview

Ji Hyun Kim is affiliated with Seoul National University in South Korea and has an extensive publication record in the fields of Materials Science and Engineering. Their research focuses primarily on semiconductor materials and devices, with significant contributions to the study of gallium oxide (Ga2O3) and related materials as well as zinc oxide (ZnO) doping and properties. Other key topics include advanced photocatalysis techniques, 2D materials and applications, MXene and MAX phase materials, advanced memory and neural computing, and semiconductor materials and devices.

The scientist has published extensively in several journals, frequently contributing to:

  • ECS Journal of Solid State Science and Technology
  • ECS Meeting Abstracts
  • Small
  • Journal of Vacuum Science & Technology A Vacuum Surfaces and Films
  • ACS Applied Materials & Interfaces

Ji Hyun Kim has collaborated regularly with prominent coauthors in their field, such as S. J. Pearton, F. Ren, Dongryul Lee, Jinho Bae, and Dong-Gyu Lee. These collaborations reflect a broad engagement with the materials science and semiconductor research community.

Key recent papers authored or coauthored by Ji Hyun Kim include:

  • Artificial Neuron and Synapse Devices Based on 2D Materials, 2021, Small
  • Review-Radiation Damage in Wide and Ultra-Wide Bandgap Semiconductors, 2021, ECS Journal of Solid State Science and Technology
  • Deep level defect states in β-, α-, and ɛ-Ga2O3 crystals and films: Impact on device performance, 2022, Journal of Vacuum Science & Technology A Vacuum Surfaces and Films
  • Monolithically Integrated Enhancement-Mode and Depletion-Mode β-Ga2O3 MESFETs with Graphene-Gate Architectures and Their Logic Applications, 2020, ACS Applied Materials & Interfaces
  • Highly selective ozone-treated β-Ga2O3 solar-blind deep-UV photodetectors, 2020, Applied Physics Letters

Their work spans multiple subfields including Materials Chemistry, Electrical and Electronic Engineering, Electronic, Optical and Magnetic Materials, Renewable Energy, Sustainability and the Environment, and Biomedical Engineering. This indicates a multidisciplinary approach integrating chemistry, physics, and engineering principles toward functional materials and device applications.

Best Publications

  • A review of Ga2O3 materials, processing, and devices

    S. J. Pearton;Jiancheng Yang;Patrick H. Cary;F. Ren

  • A benchmark study on the thermal conductivity of nanofluids

    Jacopo Buongiorno;David C. Venerus;Naveen Prabhat;Thomas McKrell

  • Wide band gap ferromagnetic semiconductors and oxides

    S. J. Pearton;C. R. Abernathy;M. E. Overberg;G. T. Thaler

  • Perspective: Ga2O3 for ultra-high power rectifiers and MOSFETS

    Stephen J. Pearton;Fan Ren;Marko Tadjer;Jihyun Kim

  • Perspective—Opportunities and Future Directions for Ga2O3

    Michael A. Mastro;Akito Kuramata;Jacob Calkins;Jihyun Kim

  • Magnetic properties of n-GaMnN thin films

    G. T. Thaler;M. E. Overberg;B. Gila;R. Frazier

  • Graphene-based nitrogen dioxide gas sensors

    G. Ko;H.-Y. Kim;J. Ahn;Y.-M. Park

  • High Responsivity β-Ga2O3 Metal–Semiconductor–Metal Solar-Blind Photodetectors with Ultraviolet Transparent Graphene Electrodes

    Sooyeoun Oh;Chang Koo Kim;Jihyun Kim

  • Radiation damage effects in Ga2O3 materials and devices

    Jihyun Kim;Stephen J. Pearton;Chaker Fares;Jiancheng Yang

  • Review of radiation damage in GaN-based materials and devices

    Stephen J. Pearton;Richard Deist;Fan Ren;Lu Liu

  • Effects of nanofluids containing graphene/graphene-oxide nanosheets on critical heat flux

    Sung Dae Park;Seung Won Lee;Sarah Kang;In Cheol Bang

  • Radiation effects in GaN materials and devices

    Alexander Y. Polyakov;S. J. Pearton;Patrick Frenzer;Fan Ren

  • Influence of MgO and Sc2O3 passivation on AlGaN/GaN high-electron-mobility transistors

    B. Luo;J. W. Johnson;J. Kim;R. M. Mehandru

  • Lipid raft proteome reveals ATP synthase complex in the cell surface

    Tae-Jung Bae;Min-Sik Kim;Jun-Woo Kim;Bong-Woo Kim

  • High reverse breakdown voltage Schottky rectifiers without edge termination on Ga2O3

    Jiancheng Yang;Shihyun Ahn;F. Ren;S. J. Pearton

  • Exfoliated β-Ga2O3 nano-belt field-effect transistors for air-stable high power and high temperature electronics

    Janghyuk Kim;Sooyeoun Oh;Michael A. Mastro;Jihyun Kim

  • Artificial Neuron and Synapse Devices Based on 2D Materials

    Geonyeop Lee;Ji Hwan Baek;Fan Ren;Stephen J. Pearton

  • AlGaN/GaN metal–oxide–semiconductor high electron mobility transistors using Sc2O3 as the gate oxide and surface passivation

    R. Mehandru;B. Luo;J. Kim;F. Ren

  • Quasi-two-dimensional β-gallium oxide solar-blind photodetectors with ultrahigh responsivity

    Sooyeoun Oh;Janghyuk Kim;Fan Ren;Stephen J. Pearton

  • Fabrication of a stretchable and patchable array of high performance micro-supercapacitors using a non-aqueous solvent based gel electrolyte

    Geumbee Lee;Daeil Kim;Doyeon Kim;Sooyeoun Oh

  • Flexible graphene-based chemical sensors on paper substrates

    Gwangseok Yang;Chongmin Lee;Jihyun Kim;Fan Ren

Frequent Co-Authors

Fan Ren
Fan Ren University of Florida
Stephen J. Pearton
Stephen J. Pearton University of Florida
C. R. Abernathy
C. R. Abernathy University of Florida
Charles R. Eddy
Charles R. Eddy United States Naval Research Laboratory
Brent P. Gila
Brent P. Gila University of Florida
A. Y. Polyakov
A. Y. Polyakov National University of Science and Technology
Donghwan Kim
Donghwan Kim Korea University
Marko J. Tadjer
Marko J. Tadjer United States Naval Research Laboratory
Sung Hyun Kim
Sung Hyun Kim Korea University
Byoung Koun Min
Byoung Koun Min Korea Institute of Science and Technology

If you think any of the details on this page are incorrect, let us know.

Report an issue

We appreciate your kind effort to assist us to improve this page, it would be helpful providing us with as much detail as possible in the text box below:

Related Online Degrees & Career Pathways

Studying Engineering and Technology in the USA opens up a wealth of career possibilities. Many students choose to supplement their technical expertise with versatile online degrees to expand their skills and career prospects.

For those interested in leadership or human resources roles, a master degree in human resources offers valuable knowledge on organizational management and people skills. Similarly, an online masters in communication can help engineers improve their ability to collaborate and lead in multidisciplinary teams.

Entrepreneurship is an increasingly popular path. Consider an mba in entrepreneurship to gain foundational business and innovation skills vital for tech startups or new ventures. For those seeking flexibility, top online mba programs no gmat make advanced business education accessible without standardized test requirements.

By combining your engineering background with these online programs, you can diversify your professional opportunities and stand out in today's job market.

Best Scientists Citing Ji Hyun Kim

Trending Scientists