Jihyun Kim spends much of his time researching Optoelectronics, Wide-bandgap semiconductor, Transistor, Analytical chemistry and Diode. His Optoelectronics research is multidisciplinary, relying on both Field-effect transistor and Breakdown voltage. His Wide-bandgap semiconductor research is multidisciplinary, incorporating elements of Radiation hardening, Irradiation, Thin film and Gate dielectric.
The study incorporates disciplines such as Condensed matter physics, Ferromagnetism, Optics and Polymer in addition to Thin film. His Analytical chemistry research incorporates themes from Molecular beam epitaxy, Magnetic semiconductor, High-electron-mobility transistor and Forward current. Jihyun Kim usually deals with Diode and limits it to topics linked to Crystallographic defect and Molecular physics.
His primary scientific interests are in Optoelectronics, Analytical chemistry, Wide-bandgap semiconductor, Transistor and Irradiation. His study ties his expertise on Thin film together with the subject of Optoelectronics. Jihyun Kim studied Thin film and Layer that intersect with Graphene.
His Analytical chemistry research incorporates elements of Spectroscopy and Molecular beam epitaxy. Jihyun Kim has included themes like Transconductance and Proton in his Irradiation study. His research in Light-emitting diode intersects with topics in Gallium nitride and Electroluminescence.
Jihyun Kim mainly focuses on Optoelectronics, Band gap, Semiconductor, Field-effect transistor and Heterojunction. His Optoelectronics research includes elements of Gallium oxide, Transistor and Semiconductor device. Threshold voltage is closely connected to Electronics in his research, which is encompassed under the umbrella topic of Transistor.
The various areas that he examines in his Band gap study include Photodiode, Photodetector, Responsivity, Ultraviolet and Graphene. His Semiconductor study combines topics in areas such as Etching, Diode and Fabrication. His Field-effect transistor study integrates concerns from other disciplines, such as Schottky barrier and Modulation.
Jihyun Kim focuses on Optoelectronics, Field-effect transistor, Band gap, Heterojunction and Electronics. His biological study spans a wide range of topics, including Transistor and Gamma ray. His Gamma ray research integrates issues from Radiation hardening, Wide-bandgap semiconductor, Electron and Ultraviolet.
Jihyun Kim combines subjects such as Polarization, Fermi gas, Irradiation and Saturation current with his study of Field-effect transistor. His studies deal with areas such as Gallium oxide, Photodiode and Radiation damage as well as Band gap. His study in Heterojunction is interdisciplinary in nature, drawing from both Memristor, Bipolar junction transistor, Neuromorphic engineering, Van der waals heterostructures and p–n junction.
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A review of Ga2O3 materials, processing, and devices
S. J. Pearton;Jiancheng Yang;Patrick H. Cary;F. Ren.
Applied physics reviews (2018)
Wide band gap ferromagnetic semiconductors and oxides
S. J. Pearton;C. R. Abernathy;M. E. Overberg;G. T. Thaler.
Journal of Applied Physics (2003)
Magnetic properties of n-GaMnN thin films
G. T. Thaler;M. E. Overberg;B. Gila;R. Frazier.
Applied Physics Letters (2002)
Graphene-based nitrogen dioxide gas sensors
G. Ko;H.-Y. Kim;J. Ahn;Y.-M. Park.
Current Applied Physics (2010)
Perspective—Opportunities and Future Directions for Ga2O3
Michael A. Mastro;Akito Kuramata;Jacob Calkins;Jihyun Kim.
ECS Journal of Solid State Science and Technology (2017)
Perspective: Ga2O3 for ultra-high power rectifiers and MOSFETS
Stephen J. Pearton;Fan Ren;Marko Tadjer;Jihyun Kim.
Journal of Applied Physics (2018)
Large-scale genome-wide association studies in East Asians identify new genetic loci influencing metabolic traits.
Young Jin Kim;Min Jin Go;Cheng Hu;Chang Bum Hong.
Nature Genetics (2011)
Influence of MgO and Sc2O3 passivation on AlGaN/GaN high-electron-mobility transistors
B. Luo;J. W. Johnson;J. Kim;R. M. Mehandru.
Applied Physics Letters (2002)
Review of radiation damage in GaN-based materials and devices
Stephen J. Pearton;Richard Deist;Fan Ren;Lu Liu.
Journal of Vacuum Science and Technology (2013)
Radiation effects in GaN materials and devices
Alexander Y. Polyakov;S. J. Pearton;Patrick Frenzer;Fan Ren.
Journal of Materials Chemistry C (2013)
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