The chart shows the distribution of publications by all Research.com ranked scientists in the field of Engineering and Technology in 2026. The highlighted bar marks where Ji Hyun Kim sits on this spectrum.
This scientist: 570 publications — 96th percentile
96% of scientists in this discipline score the same or lower.
The last bar groups every scientist with 804 publications or more.
The chart shows the D-index (discipline H-index) distribution of Engineering and Technology scientists ranked by Research.com in 2026. The highlighted bar marks where Ji Hyun Kim sits on this spectrum.
This scientist: 66 D-Index — 86th percentile
86% of scientists in this discipline score the same or lower.
The last bar groups every scientist with 107 D-Index or more.
Ji Hyun Kim is affiliated with Seoul National University in South Korea and has an extensive publication record in the fields of Materials Science and Engineering. Their research focuses primarily on semiconductor materials and devices, with significant contributions to the study of gallium oxide (Ga2O3) and related materials as well as zinc oxide (ZnO) doping and properties. Other key topics include advanced photocatalysis techniques, 2D materials and applications, MXene and MAX phase materials, advanced memory and neural computing, and semiconductor materials and devices.
The scientist has published extensively in several journals, frequently contributing to:
Ji Hyun Kim has collaborated regularly with prominent coauthors in their field, such as S. J. Pearton, F. Ren, Dongryul Lee, Jinho Bae, and Dong-Gyu Lee. These collaborations reflect a broad engagement with the materials science and semiconductor research community.
Key recent papers authored or coauthored by Ji Hyun Kim include:
Their work spans multiple subfields including Materials Chemistry, Electrical and Electronic Engineering, Electronic, Optical and Magnetic Materials, Renewable Energy, Sustainability and the Environment, and Biomedical Engineering. This indicates a multidisciplinary approach integrating chemistry, physics, and engineering principles toward functional materials and device applications.
S. J. Pearton;Jiancheng Yang;Patrick H. Cary;F. Ren
Jacopo Buongiorno;David C. Venerus;Naveen Prabhat;Thomas McKrell
S. J. Pearton;C. R. Abernathy;M. E. Overberg;G. T. Thaler
Stephen J. Pearton;Fan Ren;Marko Tadjer;Jihyun Kim
Michael A. Mastro;Akito Kuramata;Jacob Calkins;Jihyun Kim
G. T. Thaler;M. E. Overberg;B. Gila;R. Frazier
G. Ko;H.-Y. Kim;J. Ahn;Y.-M. Park
Sooyeoun Oh;Chang Koo Kim;Jihyun Kim
Jihyun Kim;Stephen J. Pearton;Chaker Fares;Jiancheng Yang
Stephen J. Pearton;Richard Deist;Fan Ren;Lu Liu
Sung Dae Park;Seung Won Lee;Sarah Kang;In Cheol Bang
Alexander Y. Polyakov;S. J. Pearton;Patrick Frenzer;Fan Ren
B. Luo;J. W. Johnson;J. Kim;R. M. Mehandru
Tae-Jung Bae;Min-Sik Kim;Jun-Woo Kim;Bong-Woo Kim
Jiancheng Yang;Shihyun Ahn;F. Ren;S. J. Pearton
Janghyuk Kim;Sooyeoun Oh;Michael A. Mastro;Jihyun Kim
Geonyeop Lee;Ji Hwan Baek;Fan Ren;Stephen J. Pearton
R. Mehandru;B. Luo;J. Kim;F. Ren
Sooyeoun Oh;Janghyuk Kim;Fan Ren;Stephen J. Pearton
Geumbee Lee;Daeil Kim;Doyeon Kim;Sooyeoun Oh
Gwangseok Yang;Chongmin Lee;Jihyun Kim;Fan Ren
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