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Donghwan Kim

Donghwan Kim

D-Index & Metrics

Discipline name D-Index World Ranking Current World Ranking National Ranking Current National Ranking Publications Citations
Engineering and Technology 49 4263 4097 102 102 578 10650

Donghwan Kim publications per year

The chart shows the history of publications by Donghwan Kim between 1983 and 2025, highlighting the no. of papers published in each year and offering an overview of the publication velocity of this scholar. Donghwan Kim published across 43 years, from 1983 to 2025, averaging 17.9 papers a year. Output peaked at 52 publications in 2012. 35 of the 771 publications appeared in the last two years.

No. of publications
10 20 30 40 50
Bar chart. Horizontal axis: year, 1983 to 2025. Vertical axis: number of publications, 0 to 52. Peak 52 publications in 2012. 1983: 1 publication 1984: 1 publication 1985: 0 publications 1986: 0 publications 1987: 0 publications 1988: 1 publication 1989: 1 publication 1990: 1 publication 1991: 1 publication 1992: 3 publications 1993: 2 publications 1994: 4 publications 1995: 1 publication 1996: 5 publications 1997: 7 publications 1998: 5 publications 1999: 13 publications 2000: 5 publications 2001: 12 publications 2002: 15 publications 2003: 15 publications 2004: 6 publications 2005: 27 publications 2006: 17 publications 2007: 16 publications 2008: 18 publications 2009: 25 publications 2010: 30 publications 2011: 43 publications 2012: 52 publications 2013: 40 publications 2014: 43 publications 2015: 38 publications 2016: 51 publications 2017: 40 publications 2018: 45 publications 2019: 40 publications 2020: 42 publications 2021: 32 publications 2022: 17 publications 2023: 21 publications 2024: 18 publications 2025: 17 publications
1983 2025

771 publications in total across all disciplines

View publications per year as a table
Donghwan Kim: publications per year, 1983 to 2025
Year Publications
1983 1
1984 1
1985 0
1986 0
1987 0
1988 1
1989 1
1990 1
1991 1
1992 3
1993 2
1994 4
1995 1
1996 5
1997 7
1998 5
1999 13
2000 5
2001 12
2002 15
2003 15
2004 6
2005 27
2006 17
2007 16
2008 18
2009 25
2010 30
2011 43
2012 52
2013 40
2014 43
2015 38
2016 51
2017 40
2018 45
2019 40
2020 42
2021 32
2022 17
2023 21
2024 18
2025 17
Total 771
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Donghwan Kim publication distribution in Engineering and Technology in 2026

The chart shows the distribution of publications by all Research.com ranked scientists in the field of Engineering and Technology in 2026. The highlighted bar marks where Donghwan Kim sits on this spectrum.

No. of scientists
100 200 300 400
Bar chart with 78 bars. Horizontal axis: publications, 38–47 to 804+. Vertical axis: number of scientists, 0 to 457. Most scientists, 457, have 148–157 publications. The last bar groups every scientist with 804 publications or more. The highlighted bar, 578–587 publications, is where this scientist sits. 38–47 publications: 20 scientists 48–57 publications: 35 scientists 58–67 publications: 96 scientists 68–77 publications: 135 scientists 78–87 publications: 190 scientists 88–97 publications: 259 scientists 98–107 publications: 283 scientists 108–117 publications: 369 scientists 118–127 publications: 341 scientists 128–137 publications: 386 scientists 138–147 publications: 372 scientists 148–157 publications: 457 scientists 158–167 publications: 415 scientists 168–177 publications: 407 scientists 178–187 publications: 421 scientists 188–197 publications: 378 scientists 198–207 publications: 403 scientists 208–217 publications: 317 scientists 218–227 publications: 346 scientists 228–237 publications: 321 scientists 238–247 publications: 260 scientists 248–257 publications: 280 scientists 258–267 publications: 240 scientists 268–277 publications: 214 scientists 278–287 publications: 242 scientists 288–297 publications: 203 scientists 298–307 publications: 166 scientists 308–317 publications: 154 scientists 318–327 publications: 175 scientists 328–337 publications: 159 scientists 338–347 publications: 99 scientists 348–357 publications: 131 scientists 358–367 publications: 106 scientists 368–377 publications: 118 scientists 378–387 publications: 97 scientists 388–397 publications: 108 scientists 398–407 publications: 82 scientists 408–417 publications: 71 scientists 418–427 publications: 64 scientists 428–437 publications: 55 scientists 438–447 publications: 54 scientists 448–457 publications: 60 scientists 458–467 publications: 47 scientists 468–477 publications: 40 scientists 478–487 publications: 30 scientists 488–497 publications: 29 scientists 498–507 publications: 38 scientists 508–517 publications: 40 scientists 518–527 publications: 32 scientists 528–537 publications: 23 scientists 538–547 publications: 28 scientists 548–557 publications: 23 scientists 558–567 publications: 19 scientists 568–577 publications: 16 scientists 578–587 publications: 17 scientists 588–597 publications: 18 scientists 598–607 publications: 22 scientists 608–617 publications: 15 scientists 618–627 publications: 9 scientists 628–637 publications: 11 scientists 638–647 publications: 21 scientists 648–657 publications: 12 scientists 658–667 publications: 9 scientists 668–677 publications: 11 scientists 678–687 publications: 9 scientists 688–697 publications: 6 scientists 698–707 publications: 14 scientists 708–717 publications: 7 scientists 718–727 publications: 8 scientists 728–737 publications: 10 scientists 738–747 publications: 9 scientists 748–757 publications: 5 scientists 758–767 publications: 5 scientists 768–777 publications: 11 scientists 778–787 publications: 7 scientists 788–797 publications: 2 scientists 798–803 publications: 4 scientists 804+ publications: 100 scientists
38–47 publications 804+

This scientist: 578 publications — 97th percentile

97% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 804 publications or more.

View publications distribution as a table
Number of Engineering and Technology scientists by publication count, Research.com 2026 ranking edition. Based on 9,796 ranked scientists.
Publications Scientists This scientist
38–47 20
48–57 35
58–67 96
68–77 135
78–87 190
88–97 259
98–107 283
108–117 369
118–127 341
128–137 386
138–147 372
148–157 457
158–167 415
168–177 407
178–187 421
188–197 378
198–207 403
208–217 317
218–227 346
228–237 321
238–247 260
248–257 280
258–267 240
268–277 214
278–287 242
288–297 203
298–307 166
308–317 154
318–327 175
328–337 159
338–347 99
348–357 131
358–367 106
368–377 118
378–387 97
388–397 108
398–407 82
408–417 71
418–427 64
428–437 55
438–447 54
448–457 60
458–467 47
468–477 40
478–487 30
488–497 29
498–507 38
508–517 40
518–527 32
528–537 23
538–547 28
548–557 23
558–567 19
568–577 16
578–587 17 578
588–597 18
598–607 22
608–617 15
618–627 9
628–637 11
638–647 21
648–657 12
658–667 9
668–677 11
678–687 9
688–697 6
698–707 14
708–717 7
718–727 8
728–737 10
738–747 9
748–757 5
758–767 5
768–777 11
778–787 7
788–797 2
798–803 4
804+ 100
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Donghwan Kim D-index placement in Engineering and Technology in 2026

The chart shows the D-index (discipline H-index) distribution of Engineering and Technology scientists ranked by Research.com in 2026. The highlighted bar marks where Donghwan Kim sits on this spectrum.

No. of scientists
100 200 300 400
Bar chart with 78 bars. Horizontal axis: D-Index, 30 to 107+. Vertical axis: number of scientists, 0 to 426. Most scientists, 426, have 42 D-Index. The last bar groups every scientist with 107 D-Index or more. The highlighted bar, 49 D-Index, is where this scientist sits. 30 D-Index: 59 scientists 31 D-Index: 114 scientists 32 D-Index: 129 scientists 33 D-Index: 189 scientists 34 D-Index: 200 scientists 35 D-Index: 262 scientists 36 D-Index: 311 scientists 37 D-Index: 312 scientists 38 D-Index: 350 scientists 39 D-Index: 385 scientists 40 D-Index: 348 scientists 41 D-Index: 362 scientists 42 D-Index: 426 scientists 43 D-Index: 380 scientists 44 D-Index: 310 scientists 45 D-Index: 341 scientists 46 D-Index: 301 scientists 47 D-Index: 306 scientists 48 D-Index: 271 scientists 49 D-Index: 246 scientists 50 D-Index: 210 scientists 51 D-Index: 253 scientists 52 D-Index: 213 scientists 53 D-Index: 221 scientists 54 D-Index: 195 scientists 55 D-Index: 186 scientists 56 D-Index: 170 scientists 57 D-Index: 167 scientists 58 D-Index: 166 scientists 59 D-Index: 144 scientists 60 D-Index: 152 scientists 61 D-Index: 141 scientists 62 D-Index: 138 scientists 63 D-Index: 131 scientists 64 D-Index: 118 scientists 65 D-Index: 114 scientists 66 D-Index: 119 scientists 67 D-Index: 95 scientists 68 D-Index: 87 scientists 69 D-Index: 77 scientists 70 D-Index: 89 scientists 71 D-Index: 69 scientists 72 D-Index: 54 scientists 73 D-Index: 46 scientists 74 D-Index: 55 scientists 75 D-Index: 54 scientists 76 D-Index: 49 scientists 77 D-Index: 53 scientists 78 D-Index: 46 scientists 79 D-Index: 28 scientists 80 D-Index: 39 scientists 81 D-Index: 36 scientists 82 D-Index: 24 scientists 83 D-Index: 26 scientists 84 D-Index: 36 scientists 85 D-Index: 18 scientists 86 D-Index: 25 scientists 87 D-Index: 19 scientists 88 D-Index: 26 scientists 89 D-Index: 27 scientists 90 D-Index: 23 scientists 91 D-Index: 15 scientists 92 D-Index: 12 scientists 93 D-Index: 9 scientists 94 D-Index: 15 scientists 95 D-Index: 10 scientists 96 D-Index: 13 scientists 97 D-Index: 13 scientists 98 D-Index: 9 scientists 99 D-Index: 7 scientists 100 D-Index: 7 scientists 101 D-Index: 8 scientists 102 D-Index: 7 scientists 103 D-Index: 7 scientists 104 D-Index: 9 scientists 105 D-Index: 6 scientists 106 D-Index: 9 scientists 107+ D-Index: 99 scientists
30 D-Index 107+

This scientist: 49 D-Index — 57th percentile

57% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 107 D-Index or more.

View D-Index distribution as a table
Number of Engineering and Technology scientists by D-index, Research.com 2026 ranking edition. Based on 9,796 ranked scientists.
D-Index Scientists This scientist
30 59
31 114
32 129
33 189
34 200
35 262
36 311
37 312
38 350
39 385
40 348
41 362
42 426
43 380
44 310
45 341
46 301
47 306
48 271
49 246 49
50 210
51 253
52 213
53 221
54 195
55 186
56 170
57 167
58 166
59 144
60 152
61 141
62 138
63 131
64 118
65 114
66 119
67 95
68 87
69 77
70 89
71 69
72 54
73 46
74 55
75 54
76 49
77 53
78 46
79 28
80 39
81 36
82 24
83 26
84 36
85 18
86 25
87 19
88 26
89 27
90 23
91 15
92 12
93 9
94 15
95 10
96 13
97 13
98 9
99 7
100 7
101 8
102 7
103 7
104 9
105 6
106 9
107+ 99
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Overview

Donghwan Kim is a researcher affiliated with Korea University in South Korea. Their primary field of study is engineering, with a strong focus on electrical and electronic engineering. Their work also extends into materials chemistry, civil and structural engineering, atomic and molecular physics and optics, and polymers and plastics.

The scientist has contributed extensively to topics related to photovoltaic materials and technologies. Main topics of their research include:

  • Perovskite Materials and Applications
  • Silicon and Solar Cell Technologies
  • Chalcogenide Semiconductor Thin Films
  • Quantum Dots Synthesis And Properties
  • Conducting polymers and applications
  • Thin-Film Transistor Technologies
  • Semiconductor materials and interfaces

Frequent co-authors collaborating with Donghwan Kim include:

  • Yoonmook Kang
  • Hae-Seok Lee
  • Soohyun Bae
  • Sang-Won Lee
  • Solhee Lee

The body of work has been published mainly in venues specializing in energy and materials science, including:

  • Energies
  • Solar RRL
  • Solar Energy Materials and Solar Cells
  • Progress in Photovoltaics Research and Applications
  • Construction and Building Materials

Among recent publications, notable papers include:

  • Historical Analysis of High-Efficiency, Large-Area Solar Cells: Toward Upscaling of Perovskite Solar Cells (2020), published in Advanced Materials
  • Wettability of graphene and interfacial water structure (2021), published in Chem
  • Perovskites fabricated on textured silicon surfaces for tandem solar cells (2020), published in Communications Chemistry
  • Elemental-Migration-Assisted Full-Color-Tunable Upconversion Nanoparticles for Video-Rate Three-Dimensional Volumetric Displays (2023), published in Nano Letters
  • Pure torsional behavior of RC beams in relation to the amount of torsional reinforcement and cross-sectional properties (2020), published in Construction and Building Materials

Best Publications

  • UV Degradation and Recovery of Perovskite Solar Cells

    Sang Won Lee;Seongtak Kim;Soohyun Bae;Kyungjin Cho

  • Demonstrating the potential of yttrium-doped barium zirconate electrolyte for high-performance fuel cells.

    Kiho Bae;Dong Young Jang;Hyung Jong Choi;Donghwan Kim;Donghwan Kim

  • Investigation of Thermally Induced Degradation in CH 3 NH 3 PbI 3 Perovskite Solar Cells using In-situ Synchrotron Radiation Analysis

    Nam Koo Kim;Young Hwan Min;Seokhwan Noh;Eunkyung Cho

  • Effects of Ga contents on properties of CIGS thin films and solar cells fabricated by co-evaporation technique

    Sunghun Jung;Se Jin Ahn;Jae Ho Yun;Jihye Gwak

  • Electric-Field-Induced Degradation of Methylammonium Lead Iodide Perovskite Solar Cells.

    Soohyun Bae;Seongtak Kim;Sang Won Lee;Kyung Jin Cho

  • Relationship between ion migration and interfacial degradation of CH3NH3PbI3 perovskite solar cells under thermal conditions.

    Seongtak Kim;Soohyun Bae;Sang Won Lee;Kyungjin Cho

  • Hybrid solar cells with vertically aligned CdTe nanorods and a conjugated polymer

    Yoonmook Kang;Nam Gyu Park;Nam Gyu Park;Donghwan Kim

  • Historical Analysis of High-Efficiency, Large-Area Solar Cells: Toward Upscaling of Perovskite Solar Cells

    Sang Won Lee;Soohyun Bae;Donghwan Kim;Hae Seok Lee

  • Improvement on surface texturing of single crystalline silicon for solar cells by saw-damage etching using an acidic solution

    Hayoung Park;Soonwoo Kwon;Joon Sung Lee;Hee Jin Lim

  • Properties of cadmium sulfide thin films deposited by chemical bath deposition with ultrasonication

    Jun Young Choi;Kang Jin Kim;Ji Beom Yoo;Donghwan Kim

  • An automated, high-throughput plant phenotyping system using machine learning-based plant segmentation and image analysis.

    Unseok Lee;Sungyul Chang;Gian Anantrio Putra;Hyoungseok Kim

  • Low temperature deposition of ITO thin films by ion beam sputtering

    Donghwan Kim;Younggun Han;Jun Sik Cho;Seok Keun Koh

  • Fabrication of anti-reflection structure on protective layer of solar cells by hot-embossing method

    Kang Soo Han;Hyunju Lee;Donghwan Kim;Heon Lee

  • Well-aligned CdS nanorod/conjugated polymer solar cells

    Yoonmook Kang;Donghwan Kim

  • A Robust Lane Detection Method Based on Vanishing Point Estimation Using the Relevance of Line Segments

    Ju Han Yoo;Seong-Whan Lee;Sung-Kee Park;Dong Hwan Kim

  • Effects of intrinsic ZnO buffer layer based on P3HT/PCBM organic solar cells with Al-doped ZnO electrode

    Sungeun Park;Sung Ju Tark;Joon Sung Lee;Heejin Lim

  • Balance control and knee osteoarthritis severity.

    Hee Sang Kim;Dong Hwan Yun;Seung Don Yoo;Dong Hwan Kim

  • Effect of Temperature and Humidity on the Degradation Rate of Multicrystalline Silicon Photovoltaic Module

    N. C. Park;W. W. Oh;D. H. Kim

  • High‐Performance Protonic Ceramic Fuel Cells with 1 µm Thick Y:Ba(Ce, Zr)O3 Electrolytes

    Kiho Bae;Kiho Bae;Dong Hwan Kim;Dong Hwan Kim;Hyung Jong Choi;Hyung Jong Choi;Ji Won Son;Ji Won Son

  • Experiments on anisotropic etching of Si in TMAH

    Jae Sung You;Donghwan Kim;Joo Youl Huh;Ho Joon Park

  • Switching behavior of indium selenide-based phase-change memory cell

    Heon Lee;Young Keun Kim;Donghwan Kim;Dae-Hwan Kang

  • Highly Stretchable and Mechanically Stable Transparent Electrode Based on Composite of Silver Nanowires and Polyurethane–Urea

    Dong-Hwan Kim;Ki-Cheol Yu;Youngmin Kim;Jong-Woong Kim

  • Properties of cadmium sulfide thin films deposited by chemical bath deposition with ultrasonication

    Jun Young Choe;Kang Jin Kim;Donghwan Kim

Frequent Co-Authors

Ji Hyun Kim
Ji Hyun Kim Seoul National University
Byoung Koun Min
Byoung Koun Min Korea Institute of Science and Technology
Tae Yeon Seong
Tae Yeon Seong Korea University
Sam S. Yoon
Sam S. Yoon Korea University
Heon Lee
Heon Lee Korea University
Jae Ho Yun
Jae Ho Yun United States Department of Energy
Shigeo Maruyama
Shigeo Maruyama University of Tokyo
Min Jae Ko
Min Jae Ko Hanyang University
Stefan W. Glunz
Stefan W. Glunz Fraunhofer Institute for Solar Energy Systems
Richard H. Bube
Richard H. Bube Stanford University

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