D-Index & Metrics Best Publications

D-Index & Metrics D-index (Discipline H-index) only includes papers and citation values for an examined discipline in contrast to General H-index which accounts for publications across all disciplines.

Discipline name D-index D-index (Discipline H-index) only includes papers and citation values for an examined discipline in contrast to General H-index which accounts for publications across all disciplines. Citations Publications World Ranking National Ranking
Materials Science D-index 46 Citations 7,252 230 World Ranking 6744 National Ranking 1823
Electronics and Electrical Engineering D-index 43 Citations 6,491 236 World Ranking 2428 National Ranking 991

Overview

What is he best known for?

The fields of study he is best known for:

  • Semiconductor
  • Organic chemistry
  • Optics

His main research concerns Optoelectronics, Graphene, Epitaxy, Nanotechnology and Substrate. His Optoelectronics research incorporates elements of Field-effect transistor, Transistor, Transconductance and Layer, Nitride. His Field-effect transistor study deals with Semiconductor intersecting with Wide-bandgap semiconductor.

His work deals with themes such as Wafer, Electron mobility, Chemical vapor deposition, Morphology and Quantum tunnelling, which intersect with Graphene. His study in Epitaxy is interdisciplinary in nature, drawing from both Crystallography, Monolayer, Silicon carbide, Raman spectroscopy and Photoluminescence. His research investigates the connection with Substrate and areas like Sapphire which intersect with concerns in Metalorganic vapour phase epitaxy.

His most cited work include:

  • Epitaxial-Graphene RF Field-Effect Transistors on Si-Face 6H-SiC Substrates (317 citations)
  • Technique for the dry transfer of epitaxial graphene onto arbitrary substrates. (169 citations)
  • Silicon Carbide as a Platform for Power Electronics (161 citations)

What are the main themes of his work throughout his whole career to date?

Optoelectronics, Epitaxy, Graphene, Gallium nitride and Analytical chemistry are his primary areas of study. The study incorporates disciplines such as Transistor and Nitride in addition to Optoelectronics. The concepts of his Epitaxy study are interwoven with issues in Silicon, Crystallography, Dislocation, Silicon carbide and Substrate.

His Graphene research is multidisciplinary, incorporating perspectives in Electron mobility and Hall effect. His Gallium nitride research is multidisciplinary, incorporating elements of Sapphire and Nanowire. In his study, Dielectric is strongly linked to Atomic layer deposition, which falls under the umbrella field of Analytical chemistry.

He most often published in these fields:

  • Optoelectronics (56.86%)
  • Epitaxy (20.59%)
  • Graphene (17.32%)

What were the highlights of his more recent work (between 2015-2021)?

  • Optoelectronics (56.86%)
  • Analytical chemistry (14.71%)
  • Substrate (14.71%)

In recent papers he was focusing on the following fields of study:

His primary areas of study are Optoelectronics, Analytical chemistry, Substrate, Atomic layer deposition and Nitride. His studies deal with areas such as Quantum well and Layer, Gallium nitride as well as Optoelectronics. His studies in Analytical chemistry integrate themes in fields like Ion implantation, P type doping, Dark current and Rapid thermal annealing.

His Substrate study incorporates themes from Deposition and Epitaxy. His research in Epitaxy intersects with topics in Gallium and X-ray photoelectron spectroscopy. His Atomic layer deposition research incorporates elements of Schottky diode, Tin and Chemical engineering, Thermal stability.

Between 2015 and 2021, his most popular works were:

  • Editors' Choice Communication—A (001) β-Ga2O3 MOSFET with +2.9 V Threshold Voltage and HfO2 Gate Dielectric (86 citations)
  • Structural, Optical, and Electrical Characterization of Monoclinic β-Ga 2 O 3 Grown by MOVPE on Sapphire Substrates (64 citations)
  • Band Alignments of Atomic Layer Deposited ZrO2 and HfO2 High-k Dielectrics with (-201) β-Ga2O3 (41 citations)

In his most recent research, the most cited papers focused on:

  • Semiconductor
  • Organic chemistry
  • Optics

His primary areas of investigation include Optoelectronics, Analytical chemistry, Atomic layer deposition, Layer and Band gap. He has included themes like Light intensity and High-electron-mobility transistor in his Optoelectronics study. His Analytical chemistry research incorporates themes from Ion implantation, P type doping and Rapid thermal annealing.

His biological study spans a wide range of topics, including Power electronics, Chemical engineering, Metastability and Phase control. His biological study deals with issues like Metalorganic vapour phase epitaxy, which deal with fields such as Photosensitivity, Ohmic contact, Raman spectroscopy, X-ray photoelectron spectroscopy and Sapphire. Charles R. Eddy combines subjects such as Annealing and Epitaxy with his study of Monoclinic crystal system.

This overview was generated by a machine learning system which analysed the scientist’s body of work. If you have any feedback, you can contact us here.

Best Publications

Epitaxial-Graphene RF Field-Effect Transistors on Si-Face 6H-SiC Substrates

J.S. Moon;D. Curtis;M. Hu;D. Wong.
IEEE Electron Device Letters (2009)

475 Citations

Epitaxial-Graphene RF Field-Effect Transistors on Si-Face 6H-SiC Substrates

J.S. Moon;D. Curtis;M. Hu;D. Wong.
IEEE Electron Device Letters (2009)

475 Citations

Technique for the dry transfer of epitaxial graphene onto arbitrary substrates.

Caldwell Jd;Anderson Tj;Culbertson Jc;Jernigan Gg.
ACS Nano (2010)

256 Citations

Hall effect mobility of epitaxial graphene grown on silicon carbide

J. L. Tedesco;B. L. VanMil;R. L. Myers-Ward;J. M. McCrate.
Applied Physics Letters (2009)

243 Citations

Hall effect mobility of epitaxial graphene grown on silicon carbide

J. L. Tedesco;B. L. VanMil;R. L. Myers-Ward;J. M. McCrate.
Applied Physics Letters (2009)

243 Citations

Silicon Carbide as a Platform for Power Electronics

C. R. Eddy;D. K. Gaskill.
Science (2009)

239 Citations

Silicon Carbide as a Platform for Power Electronics

C. R. Eddy;D. K. Gaskill.
Science (2009)

239 Citations

Hall Effect Mobility of Epitaxial Graphene Grown on Silicon Carbide

Joseph L. Tedesco;Brenda L. VanMil;Rachael L. Myers-Ward;Joseph M. McCrate.
arXiv: Mesoscale and Nanoscale Physics (2009)

233 Citations

Hall Effect Mobility of Epitaxial Graphene Grown on Silicon Carbide

Joseph L. Tedesco;Brenda L. VanMil;Rachael L. Myers-Ward;Joseph M. McCrate.
arXiv: Mesoscale and Nanoscale Physics (2009)

233 Citations

Quantum linear magnetoresistance in multilayer epitaxial graphene.

Adam L. Friedman;Joseph L. Tedesco;Paul M. Campbell;James C. Culbertson.
Nano Letters (2010)

223 Citations

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