His main research concerns Optoelectronics, Graphene, Epitaxy, Nanotechnology and Substrate. His Optoelectronics research incorporates elements of Field-effect transistor, Transistor, Transconductance and Layer, Nitride. His Field-effect transistor study deals with Semiconductor intersecting with Wide-bandgap semiconductor.
His work deals with themes such as Wafer, Electron mobility, Chemical vapor deposition, Morphology and Quantum tunnelling, which intersect with Graphene. His study in Epitaxy is interdisciplinary in nature, drawing from both Crystallography, Monolayer, Silicon carbide, Raman spectroscopy and Photoluminescence. His research investigates the connection with Substrate and areas like Sapphire which intersect with concerns in Metalorganic vapour phase epitaxy.
Optoelectronics, Epitaxy, Graphene, Gallium nitride and Analytical chemistry are his primary areas of study. The study incorporates disciplines such as Transistor and Nitride in addition to Optoelectronics. The concepts of his Epitaxy study are interwoven with issues in Silicon, Crystallography, Dislocation, Silicon carbide and Substrate.
His Graphene research is multidisciplinary, incorporating perspectives in Electron mobility and Hall effect. His Gallium nitride research is multidisciplinary, incorporating elements of Sapphire and Nanowire. In his study, Dielectric is strongly linked to Atomic layer deposition, which falls under the umbrella field of Analytical chemistry.
His primary areas of study are Optoelectronics, Analytical chemistry, Substrate, Atomic layer deposition and Nitride. His studies deal with areas such as Quantum well and Layer, Gallium nitride as well as Optoelectronics. His studies in Analytical chemistry integrate themes in fields like Ion implantation, P type doping, Dark current and Rapid thermal annealing.
His Substrate study incorporates themes from Deposition and Epitaxy. His research in Epitaxy intersects with topics in Gallium and X-ray photoelectron spectroscopy. His Atomic layer deposition research incorporates elements of Schottky diode, Tin and Chemical engineering, Thermal stability.
His primary areas of investigation include Optoelectronics, Analytical chemistry, Atomic layer deposition, Layer and Band gap. He has included themes like Light intensity and High-electron-mobility transistor in his Optoelectronics study. His Analytical chemistry research incorporates themes from Ion implantation, P type doping and Rapid thermal annealing.
His biological study spans a wide range of topics, including Power electronics, Chemical engineering, Metastability and Phase control. His biological study deals with issues like Metalorganic vapour phase epitaxy, which deal with fields such as Photosensitivity, Ohmic contact, Raman spectroscopy, X-ray photoelectron spectroscopy and Sapphire. Charles R. Eddy combines subjects such as Annealing and Epitaxy with his study of Monoclinic crystal system.
This overview was generated by a machine learning system which analysed the scientist’s body of work. If you have any feedback, you can contact us here.
Epitaxial-Graphene RF Field-Effect Transistors on Si-Face 6H-SiC Substrates
J.S. Moon;D. Curtis;M. Hu;D. Wong.
IEEE Electron Device Letters (2009)
Epitaxial-Graphene RF Field-Effect Transistors on Si-Face 6H-SiC Substrates
J.S. Moon;D. Curtis;M. Hu;D. Wong.
IEEE Electron Device Letters (2009)
Technique for the dry transfer of epitaxial graphene onto arbitrary substrates.
Caldwell Jd;Anderson Tj;Culbertson Jc;Jernigan Gg.
ACS Nano (2010)
Hall effect mobility of epitaxial graphene grown on silicon carbide
J. L. Tedesco;B. L. VanMil;R. L. Myers-Ward;J. M. McCrate.
Applied Physics Letters (2009)
Hall effect mobility of epitaxial graphene grown on silicon carbide
J. L. Tedesco;B. L. VanMil;R. L. Myers-Ward;J. M. McCrate.
Applied Physics Letters (2009)
Silicon Carbide as a Platform for Power Electronics
C. R. Eddy;D. K. Gaskill.
Science (2009)
Silicon Carbide as a Platform for Power Electronics
C. R. Eddy;D. K. Gaskill.
Science (2009)
Hall Effect Mobility of Epitaxial Graphene Grown on Silicon Carbide
Joseph L. Tedesco;Brenda L. VanMil;Rachael L. Myers-Ward;Joseph M. McCrate.
arXiv: Mesoscale and Nanoscale Physics (2009)
Hall Effect Mobility of Epitaxial Graphene Grown on Silicon Carbide
Joseph L. Tedesco;Brenda L. VanMil;Rachael L. Myers-Ward;Joseph M. McCrate.
arXiv: Mesoscale and Nanoscale Physics (2009)
Quantum linear magnetoresistance in multilayer epitaxial graphene.
Adam L. Friedman;Joseph L. Tedesco;Paul M. Campbell;James C. Culbertson.
Nano Letters (2010)
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