World's Best Scientists 2026 revealed!

D-Index & Metrics

Electronics and Electrical Engineering

D-Index
55
Citations
10433
World Ranking
2204
National Ranking
860

Materials Science

D-Index
58
Citations
12049
World Ranking
7690
National Ranking
1910

Overview

Charles R. Eddy is affiliated with the United States Naval Research Laboratory in the United States. Their research primarily focuses on semiconductor materials and devices, with an emphasis on gallium oxide and gallium nitride-based semiconductor materials. The body of work also encompasses plasma diagnostics and applications, metal and thin film mechanics, and advanced photocatalysis techniques.

Recent publications by Charles R. Eddy include the following papers:

  • The role of plasma in plasma-enhanced atomic layer deposition of crystalline films, 2020, Journal of Vacuum Science & Technology A Vacuum Surfaces and Films
  • Phase Control of Crystalline Ga2O3 Films by Plasma-Enhanced Atomic Layer Deposition, 2020, Chemistry of Materials
  • Characterization of β-Ga 2 O 3 homoepitaxial films and MOSFETs grown by MOCVD at high growth rates, 2020, Journal of Physics D Applied Physics
  • Band offset determination for amorphous Al2O3 deposited on bulk AlN and atomic-layer epitaxial AlN on sapphire, 2020, Applied Physics Letters
  • High-Temperature Operation of AlxGa1−xN (x > 0.4) Channel Metal Oxide Semiconductor Heterostructure Field Effect Transistors with High-k Atomic Layer Deposited Gate Oxides, 2020, physica status solidi (a)

The frequent co-authors collaborating with Eddy include:

  • Neeraj Nepal
  • David R. Boris
  • Scott G. Walton
  • J. Woodward
  • Virginia D. Wheeler

Their publications are commonly featured in the following journals and venues:

  • Journal of Vacuum Science & Technology A Vacuum Surfaces and Films
  • Journal of Vacuum Science & Technology B Nanotechnology and Microelectronics Materials Processing Measurement and Phenomena
  • ECS Meeting Abstracts
  • Chemistry of Materials
  • Journal of Physics D Applied Physics

Charles R. Eddy's main fields of study are engineering and materials science. More specifically, their work spans the subfields of electrical and electronic engineering, materials chemistry, electronic, optical, and magnetic materials, condensed matter physics, and mechanics of materials.

The main research topics that Eddy has explored include:

  • Semiconductor materials and devices
  • Ga2O3 and related materials
  • GaN-based semiconductor devices and materials
  • ZnO doping and properties
  • Plasma Diagnostics and Applications
  • Metal and Thin Film Mechanics
  • Advanced Photocatalysis Techniques

Best Publications

  • Epitaxial-Graphene RF Field-Effect Transistors on Si-Face 6H-SiC Substrates

    J.S. Moon;D. Curtis;M. Hu;D. Wong

  • Silicon Carbide as a Platform for Power Electronics

    C. R. Eddy;D. K. Gaskill

  • Technique for the dry transfer of epitaxial graphene onto arbitrary substrates.

    Caldwell Jd;Anderson Tj;Culbertson Jc;Jernigan Gg

  • Technique for the Dry Transfer of Epitaxial Graphene onto Arbitrary Substrates

    Joshua D. Caldwell;Travis J. Anderson;James C. Culbertson;Glenn G. Jernigan

  • Hall effect mobility of epitaxial graphene grown on silicon carbide

    J. L. Tedesco;B. L. VanMil;R. L. Myers-Ward;J. M. McCrate

  • Quantum linear magnetoresistance in multilayer epitaxial graphene.

    Adam L. Friedman;Joseph L. Tedesco;Paul M. Campbell;James C. Culbertson

  • Correlating Raman spectral signatures with carrier mobility in epitaxial graphene: a guide to achieving high mobility on the wafer scale.

    Joshua A. Robinson;Maxwell Wetherington;Joseph L. Tedesco;Paul M. Campbell

  • Hall Effect Mobility of Epitaxial Graphene Grown on Silicon Carbide

    Joseph L. Tedesco;Brenda L. VanMil;Rachael L. Myers-Ward;Joseph M. McCrate

  • Top-Gated Epitaxial Graphene FETs on Si-Face SiC Wafers With a Peak Transconductance of 600 mS/mm

    J.S. Moon;D. Curtis;S. Bui;M. Hu

  • An outbreak of viral gastroenteritis associated with consumption of sandwiches: implications for the control of transmission by food handlers.

    U. D. Parashar;L. Dow;R. L. Fankhauser;C. D. Humphrey

  • Group iii-nitride growth on silicon or silicon germanium substrates and method and devices therefor

    Michael A. Mastro;Charles R. Eddy;Shahzad Akbar

  • Editors' Choice Communication—A (001) β-Ga2O3 MOSFET with +2.9 V Threshold Voltage and HfO2 Gate Dielectric

    Marko J. Tadjer;Nadeemullah A. Mahadik;Virginia D. Wheeler;Evan R. Glaser

  • Reduced Self-Heating in AlGaN/GaN HEMTs Using Nanocrystalline Diamond Heat-Spreading Films

    M. J. Tadjer;T. J. Anderson;K. D. Hobart;T. I. Feygelson

  • Growth of gallium nitride thin films by electron cyclotron resonance microwave plasma‐assisted molecular beam epitaxy

    C. R. Eddy;T. D. Moustakas;J. Scanlon

  • Conductance anisotropy in epitaxial graphene sheets generated by substrate interactions.

    Michael K. Yakes;Daniel Gunlycke;Joseph L. Tedesco;Paul M. Campbell

  • Surface depletion effects in semiconducting nanowires

    B. S. Simpkins;M. A. Mastro;C. R. Eddy;P. E. Pehrsson

  • Structural, Optical, and Electrical Characterization of Monoclinic β-Ga 2 O 3 Grown by MOVPE on Sapphire Substrates

    Marko J. Tadjer;Michael A. Mastro;Nadeemullah A. Mahadik;Marc Currie

  • Multicycle rapid thermal annealing technique and its application for the electrical activation of Mg implanted in GaN

    B.N. Feigelson;T.J. Anderson;M. Abraham;J.A. Freitas

  • Large-area transparent conductive few-layer graphene electrode in GaN-based ultra-violet light-emitting diodes

    Byung Jae Kim;Chongmin Lee;Younghun Jung;Kwang Hyeon Baik

  • Development of solar-blind photodetectors based on Si-implanted β-Ga 2 O 3

    Sooyeoun Oh;Younghun Jung;Michael A. Mastro;Jennifer K. Hite

Frequent Co-Authors

D. Kurt Gaskill
D. Kurt Gaskill United States Naval Research Laboratory
Marko J. Tadjer
Marko J. Tadjer United States Naval Research Laboratory
Karl D. Hobart
Karl D. Hobart United States Naval Research Laboratory
Ji Hyun Kim
Ji Hyun Kim Seoul National University
Francis J. Kub
Francis J. Kub United States Naval Research Laboratory
Joshua D. Caldwell
Joshua D. Caldwell Vanderbilt University
Paul M. Campbell
Paul M. Campbell United States Naval Research Laboratory
Joshua A. Robinson
Joshua A. Robinson Pennsylvania State University
James E. Butler
James E. Butler Euclid TechLabs, LLC
Igor Vurgaftman
Igor Vurgaftman United States Naval Research Laboratory

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