World's Best Scientists 2026 revealed!

D-Index & Metrics

Electronics and Electrical Engineering

D-Index
39
Citations
5689
World Ranking
4741
National Ranking
1661

Overview

Francis J. Kub is affiliated with the United States Naval Research Laboratory in the United States. Their research primarily focuses on the physics and materials science fields, with particular attention to condensed matter physics and electronic materials.

They have contributed to several areas within their domain, including GaN-based semiconductor devices and materials, Ga2O3 and related materials, ZnO doping and properties, semiconductor materials and devices more broadly, as well as optical measurement and interference techniques and surface roughness and optical measurements.

Their recent publications cover a variety of topics related to semiconductor devices and materials. Notable papers include:

  • Recovery from plasma etching-induced nitrogen vacancies in p-type gallium nitride using UV/O3 treatments, 2020, Applied Physics Letters
  • Effect of GaN Substrate Properties on Vertical GaN PiN Diode Electrical Performance, 2021, Journal of Electronic Materials
  • (Invited) Understanding the Electroluminescence Signature of High-Voltage Vertical GaN Pin Diodes with Different Edge Termination Designs, 2021, ECS Meeting Abstracts
  • Using Wafer Scale Optical Profilometry to Estimate the Failure Rate of Vertical Pin GaN Diodes, 2021, ECS Meeting Abstracts

Kub frequently collaborates with a set of coauthors who have worked alongside them on multiple research projects. These include Mona A. Ebrish, Travis J. Anderson, Karl D. Hobart, Andrew D. Koehler, and James C. Gallagher.

The scientist has published multiple papers in venues such as ECS Meeting Abstracts, Applied Physics Letters, and the Journal of Electronic Materials, indicating a focus on venues that address materials science and electronic device engineering.

Best Publications

  • Advanced methods for making semiconductor devices by low temperature direct bonding

    Francis J. Kub;Victor Temple;Karl Hobart;John Neilson

  • Method for fabricating singe crystal materials over CMOS devices

    Francis J. Kub;Karl D. Hobart

  • Method of producing a thin silicon-on-insulator layer

    David J. Code Godbey;Harold L. Code Hughes;Francis J. Code Kub

  • Fabrication ultra-thin bonded semiconductor layers

    Francis J. Kub;Karl D. Hobart

  • Wafer bonding of thinned electronic materials and circuits to high performance substrates

    Francis J Kub;Karl D Hobart

  • Film on Graphene on a Substrate and Method and Devices Therefor

    Francis Kub;Travis Anderson;Michael Mastro

  • Method of manufacturing a semiconductor device having a thin GaN material directly bonded to an optimized substrate

    Francis Kub;Karl Hobart

  • Multicycle rapid thermal annealing technique and its application for the electrical activation of Mg implanted in GaN

    B.N. Feigelson;T.J. Anderson;M. Abraham;J.A. Freitas

  • Diamond on III-nitride device

    Francis J. Kub;Travis J. Anderson;Virginia D. Wheeler;Andrew D. Koehler

  • Programmable analog vector-matrix multipliers

    F.J. Kub;K.K. Moon;I.A. Mack;F.M. Long

  • Electronic device with composite substrate

    Francis J. Kub;Karl D. Hobart

  • Compliant substrates: A comparative study of the relaxation mechanisms of strained films bonded to high and low viscosity oxides

    K. D. Hobart;F. J. Kub;M. Fatemi;M. E. Twigg

  • Activation of Mg implanted in GaN by multicycle rapid thermal annealing

    T.J. Anderson;B.N. Feigelson;F.J. Kub;M.J. Tadjer

  • Method for making piezoelectric resonator and surface acoustic wave device using hydrogen implant layer splitting

    Francis J. Kub;Karl D. Hobart

  • Strain relaxation of SiGe islands on compliant oxide

    H. Yin;R. Huang;K. D. Hobart;Z. Suo

  • Substrate-Dependent Effects on the Response of AlGaN/GaN HEMTs to 2-MeV Proton Irradiation

    Travis J. Anderson;Andrew D. Koehler;Jordan D. Greenlee;Bradley D. Weaver

  • Vertical conducting power semiconducting devices made by deep reactive ion etching

    Francis J. Kub;Karl D. Hobart

  • Method for the reduction of graphene film thickness and the removal and transfer of epitaxial graphene films from sic substrates

    Joshua D. Caldwell;Karl D. Hobart;Travis Anderson;Francis J. Kub

  • Graphene on semiconductor detector

    Francis J. Kub;Karl D. Hobart;Travis J. Anderson

  • Wafer level high-frequency measurements of photodetector characteristics

    John A. Modolo;Gordon Wood Anderson;Francis J. Kub;Ingham A. G. Mack

  • Gate after diamond transistor

    Francis Kub;Karl Hobart

Frequent Co-Authors

Charles R. Eddy
Charles R. Eddy United States Naval Research Laboratory
Joshua D. Caldwell
Joshua D. Caldwell Vanderbilt University
Igor Vurgaftman
Igor Vurgaftman United States Naval Research Laboratory
Jerry R. Meyer
Jerry R. Meyer United States Naval Research Laboratory
D. Kurt Gaskill
D. Kurt Gaskill United States Naval Research Laboratory
James C. Sturm
James C. Sturm Princeton University
Zhigang Suo
Zhigang Suo Harvard University
Rui Huang
Rui Huang The University of Texas at Austin
Ji Hyun Kim
Ji Hyun Kim Seoul National University
Mario G. Ancona
Mario G. Ancona United States Naval Research Laboratory

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