His primary areas of study are Optoelectronics, Layer, Electronic engineering, Epitaxy and Substrate. His primary area of study in Optoelectronics is in the field of Wafer. His studies deal with areas such as Thin film, Communication channel, Semiconductor and Graphene as well as Layer.
His research in Thin film intersects with topics in Crystallography and Buckling. Francis J. Kub works mostly in the field of Electronic engineering, limiting it down to topics relating to Wafer bonding and, in certain cases, Thin layers, Surface acoustic wave, Chemical-mechanical planarization, Resonator and Wafer dicing, as a part of the same area of interest. His Epitaxy research is multidisciplinary, incorporating perspectives in Semiconductor device and Crystallite.
Francis J. Kub mainly investigates Optoelectronics, Layer, Electronic engineering, Annealing and Substrate. The concepts of his Optoelectronics study are interwoven with issues in Transistor, Gallium nitride and Epitaxy. In his work, Heterojunction is strongly intertwined with Graphene, which is a subfield of Layer.
His research in Electronic engineering focuses on subjects like Signal processing, which are connected to Photodetector. His Annealing research also works with subjects such as
His primary scientific interests are in Optoelectronics, Layer, Annealing, Gallium nitride and Epitaxy. His biological study focuses on Doping. His Layer research incorporates elements of Heterojunction and High-electron-mobility transistor.
His studies in Annealing integrate themes in fields like Dopant Activation, Dopant, Photoluminescence and Raman spectroscopy. His Gallium nitride research incorporates elements of Thermal conductivity, Vacancy defect, Second-harmonic generation and Frequency conversion. His studies deal with areas such as Chemical vapor deposition and Engineering physics as well as Epitaxy.
Francis J. Kub mainly focuses on Optoelectronics, Annealing, Wide-bandgap semiconductor, Graphene and Substrate. His work deals with themes such as Layer, Nitride, Ion implantation and Transistor, which intersect with Optoelectronics. His Annealing research is multidisciplinary, incorporating perspectives in Thin film and Raman spectroscopy, Analytical chemistry.
His Wide-bandgap semiconductor study integrates concerns from other disciplines, such as Gallium nitride, Electron mobility and Fluence. Francis J. Kub has included themes like Heterojunction and Semiconductor in his Graphene study. His Substrate study incorporates themes from Scattering, Transconductance, Sapphire, Carbon and Saturation current.
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Advanced methods for making semiconductor devices by low temperature direct bonding
Francis J. Kub;Victor Temple;Karl Hobart;John Neilson.
(1998)
Method for fabricating singe crystal materials over CMOS devices
Francis J. Kub;Karl D. Hobart.
(1999)
Method of producing a thin silicon-on-insulator layer
David J. Code Godbey;Harold L. Code Hughes;Francis J. Code Kub.
padn (1990)
Fabrication ultra-thin bonded semiconductor layers
Francis J. Kub;Karl D. Hobart.
(1999)
Wafer bonding of thinned electronic materials and circuits to high performance substrates
Francis J Kub;Karl D Hobart.
(2003)
Single-crystal material on non-single-crystalline substrate
Francis J Kub;Karl D Hobart.
(2000)
Film on Graphene on a Substrate and Method and Devices Therefor
Francis Kub;Travis Anderson;Michael Mastro.
(2011)
Method of manufacturing a semiconductor device having a thin GaN material directly bonded to an optimized substrate
Francis Kub;Karl Hobart.
(2001)
Diamond on III-nitride device
Francis J. Kub;Travis J. Anderson;Virginia D. Wheeler;Andrew D. Koehler.
(2017)
Programmable analog vector-matrix multipliers
F.J. Kub;K.K. Moon;I.A. Mack;F.M. Long.
IEEE Journal of Solid-state Circuits (1990)
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