World's Best Scientists 2026 revealed!

D-Index & Metrics

Electronics and Electrical Engineering

D-Index
39
Citations
5689
World Ranking
4741
National Ranking
1662

Francis J. Kub publication distribution in Electronics and Electrical Engineering in 2026

The chart shows the distribution of publications by all Research.com ranked scientists in the field of Electronics and Electrical Engineering in 2026. The highlighted bar marks where Francis J. Kub sits on this spectrum.

34–53 publications: 24 scientists 54–73 publications: 52 scientists 74–93 publications: 114 scientists 94–113 publications: 203 scientists 114–133 publications: 269 scientists 134–153 publications: 355 scientists 154–173 publications: 403 scientists 174–193 publications: 445 scientists 194–213 publications: 430 scientists 214–233 publications: 431 scientists 234–253 publications: 399 scientists 254–273 publications: 366 scientists 274–293 publications: 335 scientists 294–313 publications: 300 scientists 314–333 publications: 276 scientists 334–353 publications: 250 scientists 354–373 publications: 214 scientists 374–393 publications: 187 scientists 394–413 publications: 152 scientists 414–433 publications: 169 scientists 434–453 publications: 147 scientists 454–473 publications: 111 scientists 474–493 publications: 117 scientists 494–513 publications: 103 scientists 514–533 publications: 99 scientists 534–553 publications: 92 scientists 554–573 publications: 75 scientists 574–593 publications: 58 scientists 594–613 publications: 69 scientists 614–633 publications: 50 scientists 634–653 publications: 62 scientists 654–673 publications: 54 scientists 674–693 publications: 44 scientists 694–713 publications: 37 scientists 714–733 publications: 28 scientists 734–753 publications: 26 scientists 754–773 publications: 26 scientists 774–793 publications: 19 scientists 794–813 publications: 23 scientists 814–833 publications: 20 scientists 834–853 publications: 16 scientists 854–873 publications: 20 scientists 874–893 publications: 11 scientists 894–913 publications: 11 scientists 914–933 publications: 16 scientists 934–953 publications: 13 scientists 954–973 publications: 10 scientists 974–993 publications: 11 scientists 994–1,013 publications: 9 scientists 1,014–1,033 publications: 9 scientists 1,034–1,053 publications: 10 scientists 1,054–1,064 publications: 6 scientists 1,065+ publications: 99 scientists
34 publications 1,065+

This scientist: 181 publications — 23rd percentile

23% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 1,065 publications or more.

Francis J. Kub D-index placement in Electronics and Electrical Engineering in 2026

The chart shows the D-index (discipline H-index) distribution of Electronics and Electrical Engineering scientists ranked by Research.com in 2026. The highlighted bar marks where Francis J. Kub sits on this spectrum.

30 D-Index: 178 scientists 31 D-Index: 257 scientists 32 D-Index: 263 scientists 33 D-Index: 262 scientists 34 D-Index: 244 scientists 35 D-Index: 236 scientists 36 D-Index: 211 scientists 37 D-Index: 220 scientists 38 D-Index: 214 scientists 39 D-Index: 214 scientists 40 D-Index: 205 scientists 41 D-Index: 187 scientists 42 D-Index: 194 scientists 43 D-Index: 201 scientists 44 D-Index: 155 scientists 45 D-Index: 189 scientists 46 D-Index: 148 scientists 47 D-Index: 160 scientists 48 D-Index: 134 scientists 49 D-Index: 130 scientists 50 D-Index: 141 scientists 51 D-Index: 156 scientists 52 D-Index: 108 scientists 53 D-Index: 130 scientists 54 D-Index: 112 scientists 55 D-Index: 97 scientists 56 D-Index: 111 scientists 57 D-Index: 102 scientists 58 D-Index: 108 scientists 59 D-Index: 120 scientists 60 D-Index: 103 scientists 61 D-Index: 93 scientists 62 D-Index: 92 scientists 63 D-Index: 74 scientists 64 D-Index: 77 scientists 65 D-Index: 73 scientists 66 D-Index: 64 scientists 67 D-Index: 69 scientists 68 D-Index: 60 scientists 69 D-Index: 39 scientists 70 D-Index: 57 scientists 71 D-Index: 59 scientists 72 D-Index: 46 scientists 73 D-Index: 49 scientists 74 D-Index: 38 scientists 75 D-Index: 35 scientists 76 D-Index: 32 scientists 77 D-Index: 35 scientists 78 D-Index: 31 scientists 79 D-Index: 22 scientists 80 D-Index: 34 scientists 81 D-Index: 31 scientists 82 D-Index: 34 scientists 83 D-Index: 23 scientists 84 D-Index: 18 scientists 85 D-Index: 30 scientists 86 D-Index: 19 scientists 87 D-Index: 19 scientists 88 D-Index: 20 scientists 89 D-Index: 8 scientists 90 D-Index: 17 scientists 91 D-Index: 7 scientists 92 D-Index: 14 scientists 93 D-Index: 9 scientists 94 D-Index: 15 scientists 95 D-Index: 10 scientists 96 D-Index: 12 scientists 97 D-Index: 10 scientists 98 D-Index: 10 scientists 99 D-Index: 12 scientists 100 D-Index: 16 scientists 101 D-Index: 5 scientists 102 D-Index: 7 scientists 103 D-Index: 7 scientists 104 D-Index: 8 scientists 105 D-Index: 9 scientists 106 D-Index: 13 scientists 107 D-Index: 4 scientists 108 D-Index: 5 scientists 109 D-Index: 10 scientists 110 D-Index: 8 scientists 111+ D-Index: 96 scientists
30 D-Index 111+

This scientist: 39 D-Index — 33rd percentile

33% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 111 D-Index or more.

Overview

Francis J. Kub is affiliated with the United States Naval Research Laboratory in the United States. Their research primarily focuses on the physics and materials science fields, with particular attention to condensed matter physics and electronic materials.

They have contributed to several areas within their domain, including GaN-based semiconductor devices and materials, Ga2O3 and related materials, ZnO doping and properties, semiconductor materials and devices more broadly, as well as optical measurement and interference techniques and surface roughness and optical measurements.

Their recent publications cover a variety of topics related to semiconductor devices and materials. Notable papers include:

  • Recovery from plasma etching-induced nitrogen vacancies in p-type gallium nitride using UV/O3 treatments, 2020, Applied Physics Letters
  • Effect of GaN Substrate Properties on Vertical GaN PiN Diode Electrical Performance, 2021, Journal of Electronic Materials
  • (Invited) Understanding the Electroluminescence Signature of High-Voltage Vertical GaN Pin Diodes with Different Edge Termination Designs, 2021, ECS Meeting Abstracts
  • Using Wafer Scale Optical Profilometry to Estimate the Failure Rate of Vertical Pin GaN Diodes, 2021, ECS Meeting Abstracts

Kub frequently collaborates with a set of coauthors who have worked alongside them on multiple research projects. These include Mona A. Ebrish, Travis J. Anderson, Karl D. Hobart, Andrew D. Koehler, and James C. Gallagher.

The scientist has published multiple papers in venues such as ECS Meeting Abstracts, Applied Physics Letters, and the Journal of Electronic Materials, indicating a focus on venues that address materials science and electronic device engineering.

Best Publications

  • Advanced methods for making semiconductor devices by low temperature direct bonding

    Francis J. Kub;Victor Temple;Karl Hobart;John Neilson

  • Method for fabricating singe crystal materials over CMOS devices

    Francis J. Kub;Karl D. Hobart

  • Method of producing a thin silicon-on-insulator layer

    David J. Code Godbey;Harold L. Code Hughes;Francis J. Code Kub

  • Fabrication ultra-thin bonded semiconductor layers

    Francis J. Kub;Karl D. Hobart

  • Wafer bonding of thinned electronic materials and circuits to high performance substrates

    Francis J Kub;Karl D Hobart

  • Film on Graphene on a Substrate and Method and Devices Therefor

    Francis Kub;Travis Anderson;Michael Mastro

  • Method of manufacturing a semiconductor device having a thin GaN material directly bonded to an optimized substrate

    Francis Kub;Karl Hobart

  • Multicycle rapid thermal annealing technique and its application for the electrical activation of Mg implanted in GaN

    B.N. Feigelson;T.J. Anderson;M. Abraham;J.A. Freitas

  • Diamond on III-nitride device

    Francis J. Kub;Travis J. Anderson;Virginia D. Wheeler;Andrew D. Koehler

  • Programmable analog vector-matrix multipliers

    F.J. Kub;K.K. Moon;I.A. Mack;F.M. Long

  • Electronic device with composite substrate

    Francis J. Kub;Karl D. Hobart

  • Compliant substrates: A comparative study of the relaxation mechanisms of strained films bonded to high and low viscosity oxides

    K. D. Hobart;F. J. Kub;M. Fatemi;M. E. Twigg

  • Activation of Mg implanted in GaN by multicycle rapid thermal annealing

    T.J. Anderson;B.N. Feigelson;F.J. Kub;M.J. Tadjer

  • Method for making piezoelectric resonator and surface acoustic wave device using hydrogen implant layer splitting

    Francis J. Kub;Karl D. Hobart

  • Strain relaxation of SiGe islands on compliant oxide

    H. Yin;R. Huang;K. D. Hobart;Z. Suo

  • Substrate-Dependent Effects on the Response of AlGaN/GaN HEMTs to 2-MeV Proton Irradiation

    Travis J. Anderson;Andrew D. Koehler;Jordan D. Greenlee;Bradley D. Weaver

  • Vertical conducting power semiconducting devices made by deep reactive ion etching

    Francis J. Kub;Karl D. Hobart

  • Method for the reduction of graphene film thickness and the removal and transfer of epitaxial graphene films from sic substrates

    Joshua D. Caldwell;Karl D. Hobart;Travis Anderson;Francis J. Kub

  • Graphene on semiconductor detector

    Francis J. Kub;Karl D. Hobart;Travis J. Anderson

  • Wafer level high-frequency measurements of photodetector characteristics

    John A. Modolo;Gordon Wood Anderson;Francis J. Kub;Ingham A. G. Mack

  • Gate after diamond transistor

    Francis Kub;Karl Hobart

Frequent Co-Authors

Karl D. Hobart
Karl D. Hobart United States Naval Research Laboratory
Charles R. Eddy
Charles R. Eddy United States Naval Research Laboratory
Marko J. Tadjer
Marko J. Tadjer United States Naval Research Laboratory
Joshua D. Caldwell
Joshua D. Caldwell Vanderbilt University
Igor Vurgaftman
Igor Vurgaftman United States Naval Research Laboratory
Jerry R. Meyer
Jerry R. Meyer United States Naval Research Laboratory
D. Kurt Gaskill
D. Kurt Gaskill United States Naval Research Laboratory
James C. Sturm
James C. Sturm Princeton University
Thomas S. Duffy
Thomas S. Duffy Princeton University
Zhigang Suo
Zhigang Suo Harvard University

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