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Materials Science

D-Index
46
Citations
8165
World Ranking
11432
National Ranking
2685

Overview

D. Kurt Gaskill is affiliated with the United States Naval Research Laboratory in the United States. Their research predominantly focuses on materials science and engineering, with specific expertise in materials chemistry and electrical and electronic engineering.

Their extensive research spans topics including:

  • Graphene research and applications
  • Diamond and carbon-based materials research
  • Molecular junctions and nanostructures
  • Carbon nanotubes in composites
  • Quantum and electron transport phenomena
  • Graphene and nanomaterials applications
  • Silicon carbide semiconductor technologies

They have contributed to a variety of recent papers, which include:

  • Freestanding n-Doped Graphene via Intercalation of Calcium and Magnesium into the Buffer Layer-SiC(0001) Interface, 2020, Chemistry of Materials
  • Arrays of Si vacancies in 4H-SiC produced by focused Li ion beam implantation, 2021, Scientific Reports
  • Magnesium-intercalated graphene on SiC: Highly n-doped air-stable bilayer graphene at extreme displacement fields, 2020, Applied Surface Science
  • Nanostructured graphene for nanoscale electron paramagnetic resonance spectroscopy, 2020, Journal of Physics Materials
  • Electronic and Transport Properties of Epitaxial Graphene on SiC and 3C-SiC/Si: A Review, 2020, Applied Sciences

Frequent coauthors in their collaborative work include:

  • Rachael L. Myers-Ward
  • Jimmy C. Kotsakidis
  • Kevin M. Daniels
  • Michael S. Fuhrer
  • Antonija Grubišić-Čabo

The scientist publishes regularly in several academic venues, prominently including:

  • Carbon
  • arXiv (Cornell University)
  • Chemistry of Materials
  • Scientific Reports
  • PRX Quantum

D. Kurt Gaskill's research contributions are distributed mainly across the fields of materials science and engineering, with significant work in subfields such as materials chemistry, electrical and electronic engineering, biomedical engineering, atomic and molecular physics, and optics, as well as mechanical engineering.

Best Publications

  • Sensitive room-temperature terahertz detection via the photothermoelectric effect in graphene

    Xinghan Cai;Andrei B. Sushkov;Ryan J. Suess;Mohammad M. Jadidi

  • Epitaxial-Graphene RF Field-Effect Transistors on Si-Face 6H-SiC Substrates

    J.S. Moon;D. Curtis;M. Hu;D. Wong

  • Silicon Carbide as a Platform for Power Electronics

    C. R. Eddy;D. K. Gaskill

  • Polarity governs atomic interaction through two-dimensional materials

    Wei Kong;Huashan Li;Huashan Li;Kuan Qiao;Yunjo Kim

  • Technique for the Dry Transfer of Epitaxial Graphene onto Arbitrary Substrates

    Joshua D. Caldwell;Travis J. Anderson;James C. Culbertson;Glenn G. Jernigan

  • Quantum linear magnetoresistance in multilayer epitaxial graphene.

    Adam L. Friedman;Joseph L. Tedesco;Paul M. Campbell;James C. Culbertson

  • Correlating Raman spectral signatures with carrier mobility in epitaxial graphene: a guide to achieving high mobility on the wafer scale.

    Joshua A. Robinson;Maxwell Wetherington;Joseph L. Tedesco;Paul M. Campbell

  • Hall Effect Mobility of Epitaxial Graphene Grown on Silicon Carbide

    Joseph L. Tedesco;Brenda L. VanMil;Rachael L. Myers-Ward;Joseph M. McCrate

  • Top-Gated Epitaxial Graphene FETs on Si-Face SiC Wafers With a Peak Transconductance of 600 mS/mm

    J.S. Moon;D. Curtis;S. Bui;M. Hu

  • Comparison of epitaxial graphene on Si-face and C-face 4H SiC formed by ultrahigh vacuum and RF furnace production.

    Glenn G. Jernigan;Brenda L. VanMil;Joseph L. Tedesco;Joseph G. Tischler

  • Ultra-low resistance ohmic contacts in graphene field effect transistors

    J. S. Moon;M. Antcliffe;H. C. Seo;D. Curtis

  • Tunable Terahertz Hybrid Metal-Graphene Plasmons.

    Mohammad M. Jadidi;Andrei B. Sushkov;Rachael L. Myers-Ward;Anthony K. Boyd

  • Thickness-Dependent Hydrophobicity of Epitaxial Graphene

    Martin Munz;Cristina E. Giusca;Rachael L. Myers-Ward;D. Kurt Gaskill

  • Conductance anisotropy in epitaxial graphene sheets generated by substrate interactions.

    Michael K. Yakes;Daniel Gunlycke;Joseph L. Tedesco;Paul M. Campbell

  • Epitaxial graphene quantum dots for high-performance terahertz bolometers.

    Unknown

  • Plasmon-Enhanced Terahertz Photodetection in Graphene.

    Xinghan Cai;Andrei B Sushkov;Mohammad M Jadidi;Luke O Nyakiti

  • Graphene: Its Fundamentals to Future Applications

    Jeong-Sun Moon;D. Kurt Gaskill

  • Low-Phase-Noise Graphene FETs in Ambipolar RF Applications

    J S Moon;D Curtis;D Zehnder;S Kim

  • Basal plane dislocation reduction in 4H-SiC epitaxy by growth interruptions

    Unknown

  • Morphology Characterization of Argon-Mediated Epitaxial Graphene on C-face SiC

    Joseph L. Tedesco;Glenn G. Jernigan;James C. Culbertson;Jennifer K. Hite

  • Enhanced Performance in Epitaxial Graphene FETs With Optimized Channel Morphology

    Yu-Ming Lin;D. B. Farmer;K. A. Jenkins;Yanqing Wu

  • Enhanced Performance in Epitaxial Graphene FETs with Optimized Channel Morphology

    Yu-Ming Lin;Damon B. Farmer;Keith A. Jenkins;Yanqing Wu

  • Fluorine functionalization of epitaxial graphene for uniform deposition of thin high-κ dielectrics

    Virginia Wheeler;Nelson Garces;Luke Nyakiti;Rachael Myers-Ward

Frequent Co-Authors

Charles R. Eddy
Charles R. Eddy United States Naval Research Laboratory
Paul M. Campbell
Paul M. Campbell United States Naval Research Laboratory
Michael S. Fuhrer
Michael S. Fuhrer Monash University
Karl D. Hobart
Karl D. Hobart United States Naval Research Laboratory
Thomas E. Murphy
Thomas E. Murphy University of Maryland, College Park
Joshua D. Caldwell
Joshua D. Caldwell Vanderbilt University
Christos D. Dimitrakopoulos
Christos D. Dimitrakopoulos University of Massachusetts Amherst
Joshua A. Robinson
Joshua A. Robinson Pennsylvania State University
Marko J. Tadjer
Marko J. Tadjer United States Naval Research Laboratory
Marek Skowronski
Marek Skowronski Carnegie Mellon University

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