World's Best Scientists 2026 revealed!

D-Index & Metrics

Materials Science

D-Index
46
Citations
8165
World Ranking
11430
National Ranking
2682

D. Kurt Gaskill publication distribution in Materials Science in 2026

The chart shows the distribution of publications by all Research.com ranked scientists in the field of Materials Science in 2026. The highlighted bar marks where D. Kurt Gaskill sits on this spectrum.

50–69 publications: 28 scientists 70–89 publications: 152 scientists 90–109 publications: 356 scientists 110–129 publications: 487 scientists 130–149 publications: 723 scientists 150–169 publications: 835 scientists 170–189 publications: 850 scientists 190–209 publications: 891 scientists 210–229 publications: 862 scientists 230–249 publications: 766 scientists 250–269 publications: 726 scientists 270–289 publications: 665 scientists 290–309 publications: 593 scientists 310–329 publications: 537 scientists 330–349 publications: 477 scientists 350–369 publications: 440 scientists 370–389 publications: 356 scientists 390–409 publications: 321 scientists 410–429 publications: 256 scientists 430–449 publications: 246 scientists 450–469 publications: 216 scientists 470–489 publications: 212 scientists 490–509 publications: 174 scientists 510–529 publications: 194 scientists 530–549 publications: 162 scientists 550–569 publications: 131 scientists 570–589 publications: 111 scientists 590–609 publications: 103 scientists 610–629 publications: 99 scientists 630–649 publications: 77 scientists 650–669 publications: 92 scientists 670–689 publications: 56 scientists 690–709 publications: 53 scientists 710–729 publications: 53 scientists 730–749 publications: 38 scientists 750–769 publications: 52 scientists 770–789 publications: 43 scientists 790–809 publications: 38 scientists 810–829 publications: 34 scientists 830–849 publications: 25 scientists 850–869 publications: 18 scientists 870–889 publications: 20 scientists 890–909 publications: 24 scientists 910–929 publications: 27 scientists 930–949 publications: 20 scientists 950–969 publications: 17 scientists 970–989 publications: 10 scientists 990–1,009 publications: 16 scientists 1,010–1,029 publications: 13 scientists 1,030–1,049 publications: 12 scientists 1,050–1,069 publications: 9 scientists 1,070–1,089 publications: 8 scientists 1,090–1,109 publications: 7 scientists 1,110–1,129 publications: 9 scientists 1,130–1,149 publications: 2 scientists 1,150–1,162 publications: 5 scientists 1,163+ publications: 100 scientists
50 publications 1,163+

This scientist: 209 publications — 34th percentile

34% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 1,163 publications or more.

D. Kurt Gaskill D-index placement in Materials Science in 2026

The chart shows the D-index (discipline H-index) distribution of Materials Science scientists ranked by Research.com in 2026. The highlighted bar marks where D. Kurt Gaskill sits on this spectrum.

40–41 D-Index: 211 scientists 42–43 D-Index: 450 scientists 44–45 D-Index: 612 scientists 46–47 D-Index: 612 scientists 48–49 D-Index: 598 scientists 50–51 D-Index: 657 scientists 52–53 D-Index: 667 scientists 54–55 D-Index: 621 scientists 56–57 D-Index: 597 scientists 58–59 D-Index: 610 scientists 60–61 D-Index: 587 scientists 62–63 D-Index: 606 scientists 64–65 D-Index: 533 scientists 66–67 D-Index: 490 scientists 68–69 D-Index: 469 scientists 70–71 D-Index: 378 scientists 72–73 D-Index: 421 scientists 74–75 D-Index: 359 scientists 76–77 D-Index: 323 scientists 78–79 D-Index: 299 scientists 80–81 D-Index: 230 scientists 82–83 D-Index: 210 scientists 84–85 D-Index: 195 scientists 86–87 D-Index: 203 scientists 88–89 D-Index: 175 scientists 90–91 D-Index: 175 scientists 92–93 D-Index: 142 scientists 94–95 D-Index: 121 scientists 96–97 D-Index: 117 scientists 98–99 D-Index: 107 scientists 100–101 D-Index: 88 scientists 102–103 D-Index: 85 scientists 104–105 D-Index: 68 scientists 106–107 D-Index: 62 scientists 108–109 D-Index: 57 scientists 110–111 D-Index: 45 scientists 112–113 D-Index: 49 scientists 114–115 D-Index: 50 scientists 116–117 D-Index: 34 scientists 118–119 D-Index: 38 scientists 120–121 D-Index: 37 scientists 122–123 D-Index: 29 scientists 124–125 D-Index: 28 scientists 126–127 D-Index: 24 scientists 128–129 D-Index: 33 scientists 130–131 D-Index: 28 scientists 132–133 D-Index: 21 scientists 134–135 D-Index: 20 scientists 136–137 D-Index: 23 scientists 138–139 D-Index: 17 scientists 140–141 D-Index: 12 scientists 142–143 D-Index: 17 scientists 144–145 D-Index: 21 scientists 146–147 D-Index: 13 scientists 148–149 D-Index: 11 scientists 150–151 D-Index: 14 scientists 152–153 D-Index: 13 scientists 154–155 D-Index: 9 scientists 156–157 D-Index: 10 scientists 158–159 D-Index: 7 scientists 160–161 D-Index: 4 scientists 162–163 D-Index: 4 scientists 164 D-Index: 3 scientists 165+ D-Index: 98 scientists
40 D-Index 165+

This scientist: 46 D-Index — 12th percentile

12% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 165 D-Index or more.

Overview

D. Kurt Gaskill is affiliated with the United States Naval Research Laboratory in the United States. Their research predominantly focuses on materials science and engineering, with specific expertise in materials chemistry and electrical and electronic engineering.

Their extensive research spans topics including:

  • Graphene research and applications
  • Diamond and carbon-based materials research
  • Molecular junctions and nanostructures
  • Carbon nanotubes in composites
  • Quantum and electron transport phenomena
  • Graphene and nanomaterials applications
  • Silicon carbide semiconductor technologies

They have contributed to a variety of recent papers, which include:

  • Freestanding n-Doped Graphene via Intercalation of Calcium and Magnesium into the Buffer Layer-SiC(0001) Interface, 2020, Chemistry of Materials
  • Arrays of Si vacancies in 4H-SiC produced by focused Li ion beam implantation, 2021, Scientific Reports
  • Magnesium-intercalated graphene on SiC: Highly n-doped air-stable bilayer graphene at extreme displacement fields, 2020, Applied Surface Science
  • Nanostructured graphene for nanoscale electron paramagnetic resonance spectroscopy, 2020, Journal of Physics Materials
  • Electronic and Transport Properties of Epitaxial Graphene on SiC and 3C-SiC/Si: A Review, 2020, Applied Sciences

Frequent coauthors in their collaborative work include:

  • Rachael L. Myers-Ward
  • Jimmy C. Kotsakidis
  • Kevin M. Daniels
  • Michael S. Fuhrer
  • Antonija Grubišić-Čabo

The scientist publishes regularly in several academic venues, prominently including:

  • Carbon
  • arXiv (Cornell University)
  • Chemistry of Materials
  • Scientific Reports
  • PRX Quantum

D. Kurt Gaskill's research contributions are distributed mainly across the fields of materials science and engineering, with significant work in subfields such as materials chemistry, electrical and electronic engineering, biomedical engineering, atomic and molecular physics, and optics, as well as mechanical engineering.

Best Publications

  • Sensitive room-temperature terahertz detection via the photothermoelectric effect in graphene

    Xinghan Cai;Andrei B. Sushkov;Ryan J. Suess;Mohammad M. Jadidi

  • Epitaxial-Graphene RF Field-Effect Transistors on Si-Face 6H-SiC Substrates

    J.S. Moon;D. Curtis;M. Hu;D. Wong

  • Silicon Carbide as a Platform for Power Electronics

    C. R. Eddy;D. K. Gaskill

  • Polarity governs atomic interaction through two-dimensional materials

    Wei Kong;Huashan Li;Huashan Li;Kuan Qiao;Yunjo Kim

  • Technique for the Dry Transfer of Epitaxial Graphene onto Arbitrary Substrates

    Joshua D. Caldwell;Travis J. Anderson;James C. Culbertson;Glenn G. Jernigan

  • Quantum linear magnetoresistance in multilayer epitaxial graphene.

    Adam L. Friedman;Joseph L. Tedesco;Paul M. Campbell;James C. Culbertson

  • Correlating Raman spectral signatures with carrier mobility in epitaxial graphene: a guide to achieving high mobility on the wafer scale.

    Joshua A. Robinson;Maxwell Wetherington;Joseph L. Tedesco;Paul M. Campbell

  • Hall Effect Mobility of Epitaxial Graphene Grown on Silicon Carbide

    Joseph L. Tedesco;Brenda L. VanMil;Rachael L. Myers-Ward;Joseph M. McCrate

  • Top-Gated Epitaxial Graphene FETs on Si-Face SiC Wafers With a Peak Transconductance of 600 mS/mm

    J.S. Moon;D. Curtis;S. Bui;M. Hu

  • Comparison of epitaxial graphene on Si-face and C-face 4H SiC formed by ultrahigh vacuum and RF furnace production.

    Glenn G. Jernigan;Brenda L. VanMil;Joseph L. Tedesco;Joseph G. Tischler

  • Ultra-low resistance ohmic contacts in graphene field effect transistors

    J. S. Moon;M. Antcliffe;H. C. Seo;D. Curtis

  • Tunable Terahertz Hybrid Metal-Graphene Plasmons.

    Mohammad M. Jadidi;Andrei B. Sushkov;Rachael L. Myers-Ward;Anthony K. Boyd

  • Thickness-Dependent Hydrophobicity of Epitaxial Graphene

    Martin Munz;Cristina E. Giusca;Rachael L. Myers-Ward;D. Kurt Gaskill

  • Conductance anisotropy in epitaxial graphene sheets generated by substrate interactions.

    Michael K. Yakes;Daniel Gunlycke;Joseph L. Tedesco;Paul M. Campbell

  • Epitaxial graphene quantum dots for high-performance terahertz bolometers.

    Unknown

  • Plasmon-Enhanced Terahertz Photodetection in Graphene.

    Xinghan Cai;Andrei B Sushkov;Mohammad M Jadidi;Luke O Nyakiti

  • Graphene: Its Fundamentals to Future Applications

    Jeong-Sun Moon;D. Kurt Gaskill

  • Low-Phase-Noise Graphene FETs in Ambipolar RF Applications

    J S Moon;D Curtis;D Zehnder;S Kim

  • Basal plane dislocation reduction in 4H-SiC epitaxy by growth interruptions

    Unknown

  • Morphology Characterization of Argon-Mediated Epitaxial Graphene on C-face SiC

    Joseph L. Tedesco;Glenn G. Jernigan;James C. Culbertson;Jennifer K. Hite

  • Enhanced Performance in Epitaxial Graphene FETs With Optimized Channel Morphology

    Yu-Ming Lin;D. B. Farmer;K. A. Jenkins;Yanqing Wu

  • Enhanced Performance in Epitaxial Graphene FETs with Optimized Channel Morphology

    Yu-Ming Lin;Damon B. Farmer;Keith A. Jenkins;Yanqing Wu

  • Fluorine functionalization of epitaxial graphene for uniform deposition of thin high-κ dielectrics

    Virginia Wheeler;Nelson Garces;Luke Nyakiti;Rachael Myers-Ward

Frequent Co-Authors

Charles R. Eddy
Charles R. Eddy United States Naval Research Laboratory
Paul M. Campbell
Paul M. Campbell United States Naval Research Laboratory
Michael S. Fuhrer
Michael S. Fuhrer Monash University
Karl D. Hobart
Karl D. Hobart United States Naval Research Laboratory
Thomas E. Murphy
Thomas E. Murphy University of Maryland, College Park
Joshua D. Caldwell
Joshua D. Caldwell Vanderbilt University
Christos D. Dimitrakopoulos
Christos D. Dimitrakopoulos University of Massachusetts Amherst
Joshua A. Robinson
Joshua A. Robinson Pennsylvania State University
Marko J. Tadjer
Marko J. Tadjer United States Naval Research Laboratory
Marek Skowronski
Marek Skowronski Carnegie Mellon University

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