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D-Index & Metrics

Engineering and Technology

D-Index
45
Citations
7604
World Ranking
5515
National Ranking
1544

Overview

Karl D. Hobart is affiliated with the United States Naval Research Laboratory in the United States. Their research primarily focuses on materials science, engineering, and physics and astronomy, with a particular emphasis on materials chemistry and electrical and electronic engineering. The work spans several subfields, including condensed matter physics, electronic, optical, and magnetic materials, as well as renewable energy, sustainability, and the environment.

Their main topics of research include:

  • GaN-based semiconductor devices and materials
  • Ga2O3 and related materials
  • ZnO doping and properties
  • Semiconductor materials and devices
  • Silicon Carbide Semiconductor Technologies
  • Advanced Photocatalysis Techniques
  • Thermal properties of materials

Karl D. Hobart has published extensively in several notable venues. The most frequent publication venues include:

  • ECS Meeting Abstracts
  • Applied Physics Letters
  • IEEE Transactions on Electron Devices
  • Journal of Vacuum Science & Technology A Vacuum Surfaces and Films
  • Journal of Electronic Materials

Highlighted recent papers authored or coauthored by Karl D. Hobart include:

  • Integration of polycrystalline Ga2O3 on diamond for thermal management (2020, Applied Physics Letters)
  • Structural transition and recovery of Ge implanted β-Ga2O3 (2020, Applied Physics Letters)
  • High-Resolution Thermoreflectance Imaging Investigation of Self-Heating in AlGaN/GaN HEMTs on Si, SiC, and Diamond Substrates (2020, IEEE Transactions on Electron Devices)
  • Effect of probe geometry during measurement of >100Å Ga2O3 vertical rectifiers (2020, Journal of Vacuum Science & Technology A Vacuum Surfaces and Films)
  • Characterization of β-Ga2O3 homoepitaxial films and MOSFETs grown by MOCVD at high growth rates (2020, Journal of Physics D Applied Physics)

Frequent collaborators working with Karl D. Hobart include:

  • Travis J. Anderson
  • Marko J. Tadjer
  • Alan G. Jacobs
  • James Spencer Lundh
  • James C. Gallagher

Best Publications

  • Technique for the dry transfer of epitaxial graphene onto arbitrary substrates.

    Caldwell Jd;Anderson Tj;Culbertson Jc;Jernigan Gg

  • Technique for the Dry Transfer of Epitaxial Graphene onto Arbitrary Substrates

    Joshua D. Caldwell;Travis J. Anderson;James C. Culbertson;Glenn G. Jernigan

  • Room temperature operation of epitaxially grown Si/Si0.5Ge0.5/Si resonant interband tunneling diodes

    Sean L. Rommel;Thomas E. Dillon;M. W. Dashiell;H. Feng

  • Vertical GaN Junction Barrier Schottky Rectifiers by Selective Ion Implantation

    Yuhao Zhang;Zhihong Liu;Marko J. Tadjer;Min Sun

  • Editors' Choice Communication—A (001) β-Ga2O3 MOSFET with +2.9 V Threshold Voltage and HfO2 Gate Dielectric

    Marko J. Tadjer;Nadeemullah A. Mahadik;Virginia D. Wheeler;Evan R. Glaser

  • Reduced Self-Heating in AlGaN/GaN HEMTs Using Nanocrystalline Diamond Heat-Spreading Films

    M. J. Tadjer;T. J. Anderson;K. D. Hobart;T. I. Feygelson

  • Thermal conductance across β-Ga2O3-diamond van der Waals heterogeneous interfaces

    Zhe Cheng;Luke Yates;Jingjing Shi;Marko J. Tadjer

  • Structural, Optical, and Electrical Characterization of Monoclinic β-Ga 2 O 3 Grown by MOVPE on Sapphire Substrates

    Marko J. Tadjer;Michael A. Mastro;Nadeemullah A. Mahadik;Marc Currie

  • Control of the in-plane thermal conductivity of ultra-thin nanocrystalline diamond films through the grain and grain boundary properties

    Julian Anaya;Stefano Rossi;Mohammed Alomari;Erhard Kohn

  • Anisotropic and inhomogeneous thermal conduction in suspended thin-film polycrystalline diamond

    Aditya Sood;Jungwan Cho;Jungwan Cho;Karl D. Hobart;Tatyana I. Feygelson

  • Compliant substrates: A comparative study of the relaxation mechanisms of strained films bonded to high and low viscosity oxides

    K. D. Hobart;F. J. Kub;M. Fatemi;M. E. Twigg

  • Activation of Mg implanted in GaN by multicycle rapid thermal annealing

    T.J. Anderson;B.N. Feigelson;F.J. Kub;M.J. Tadjer

  • Strain relaxation of SiGe islands on compliant oxide

    H. Yin;R. Huang;K. D. Hobart;Z. Suo

  • On the driving force for recombination-induced stacking fault motion in 4H–SiC

    Joshua D. Caldwell;Robert E. Stahlbush;Mario G. Ancona;Orest J. Glembocki

  • Integration of Atomic Layer Epitaxy Crystalline Ga2O3 on Diamond for Thermal Management

    Zhe Cheng;Virginia D. Wheeler;Tingyu Bai;Jingjing Shi

  • Substrate-Dependent Effects on the Response of AlGaN/GaN HEMTs to 2-MeV Proton Irradiation

    Travis J. Anderson;Andrew D. Koehler;Jordan D. Greenlee;Bradley D. Weaver

  • Experimental observation of localized interfacial phonon modes.

    Zhe Cheng;Zhe Cheng;Ruiyang Li;Xingxu Yan;Glenn Jernigan

  • GaN-On-Diamond HEMT Technology With T AVG = 176°C at P DC,max = 56 W/mm Measured by Transient Thermoreflectance Imaging

    Marko J. Tadjer;Travis J. Anderson;Mario G. Ancona;Peter E. Raad

  • Gate after diamond transistor

    Francis Kub;Karl Hobart

  • Tunable Thermal Energy Transport across Diamond Membranes and Diamond-Si Interfaces by Nanoscale Graphoepitaxy.

    Zhe Cheng;Tingyu Bai;Jingjing Shi;Tianli Feng;Tianli Feng

  • Recombination-induced stacking fault degradation of 4H-SiC merged-PiN-Schottky diodes

    J. D. Caldwell;Robert E. Stahlbush;Eugene A. Imhoff;Karl D. Hobart

  • Ultrathin strained-SOI by stress balance on compliant substrates and FET performance

    Haizhou Yin;K.D. Hobart;R.L. Peterson;F.J. Kub

  • Simultaneous determination of the lattice thermal conductivity and grain/grain thermal resistance in polycrystalline diamond

    J. Anaya;T. Bai;Y. Wang;C. Li

  • Integration of polycrystalline Ga2O3 on diamond for thermal management

    Zhe Cheng;Virginia D. Wheeler;Tingyu Bai;Jingjing Shi

Frequent Co-Authors

Marko J. Tadjer
Marko J. Tadjer United States Naval Research Laboratory
Francis J. Kub
Francis J. Kub United States Naval Research Laboratory
Charles R. Eddy
Charles R. Eddy United States Naval Research Laboratory
Joshua D. Caldwell
Joshua D. Caldwell Vanderbilt University
James C. Sturm
James C. Sturm Princeton University
Mario G. Ancona
Mario G. Ancona United States Naval Research Laboratory
D. Kurt Gaskill
D. Kurt Gaskill United States Naval Research Laboratory
Mark S. Goorsky
Mark S. Goorsky University of California, Los Angeles
Roger K. Lake
Roger K. Lake University of California, Riverside
Samuel Graham
Samuel Graham Georgia Institute of Technology

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