World's Best Scientists 2026 revealed!

D-Index & Metrics

Engineering and Technology

D-Index
45
Citations
7604
World Ranking
5517
National Ranking
1545

Karl D. Hobart publication distribution in Engineering and Technology in 2026

The chart shows the distribution of publications by all Research.com ranked scientists in the field of Engineering and Technology in 2026. The highlighted bar marks where Karl D. Hobart sits on this spectrum.

38–47 publications: 20 scientists 48–57 publications: 35 scientists 58–67 publications: 96 scientists 68–77 publications: 135 scientists 78–87 publications: 190 scientists 88–97 publications: 259 scientists 98–107 publications: 283 scientists 108–117 publications: 369 scientists 118–127 publications: 341 scientists 128–137 publications: 386 scientists 138–147 publications: 372 scientists 148–157 publications: 457 scientists 158–167 publications: 415 scientists 168–177 publications: 407 scientists 178–187 publications: 421 scientists 188–197 publications: 378 scientists 198–207 publications: 403 scientists 208–217 publications: 317 scientists 218–227 publications: 346 scientists 228–237 publications: 321 scientists 238–247 publications: 260 scientists 248–257 publications: 280 scientists 258–267 publications: 240 scientists 268–277 publications: 214 scientists 278–287 publications: 242 scientists 288–297 publications: 203 scientists 298–307 publications: 166 scientists 308–317 publications: 154 scientists 318–327 publications: 175 scientists 328–337 publications: 159 scientists 338–347 publications: 99 scientists 348–357 publications: 131 scientists 358–367 publications: 106 scientists 368–377 publications: 118 scientists 378–387 publications: 97 scientists 388–397 publications: 108 scientists 398–407 publications: 82 scientists 408–417 publications: 71 scientists 418–427 publications: 64 scientists 428–437 publications: 55 scientists 438–447 publications: 54 scientists 448–457 publications: 60 scientists 458–467 publications: 47 scientists 468–477 publications: 40 scientists 478–487 publications: 30 scientists 488–497 publications: 29 scientists 498–507 publications: 38 scientists 508–517 publications: 40 scientists 518–527 publications: 32 scientists 528–537 publications: 23 scientists 538–547 publications: 28 scientists 548–557 publications: 23 scientists 558–567 publications: 19 scientists 568–577 publications: 16 scientists 578–587 publications: 17 scientists 588–597 publications: 18 scientists 598–607 publications: 22 scientists 608–617 publications: 15 scientists 618–627 publications: 9 scientists 628–637 publications: 11 scientists 638–647 publications: 21 scientists 648–657 publications: 12 scientists 658–667 publications: 9 scientists 668–677 publications: 11 scientists 678–687 publications: 9 scientists 688–697 publications: 6 scientists 698–707 publications: 14 scientists 708–717 publications: 7 scientists 718–727 publications: 8 scientists 728–737 publications: 10 scientists 738–747 publications: 9 scientists 748–757 publications: 5 scientists 758–767 publications: 5 scientists 768–777 publications: 11 scientists 778–787 publications: 7 scientists 788–797 publications: 2 scientists 798–803 publications: 4 scientists 804+ publications: 100 scientists
38 publications 804+

This scientist: 350 publications — 84th percentile

84% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 804 publications or more.

Karl D. Hobart D-index placement in Engineering and Technology in 2026

The chart shows the D-index (discipline H-index) distribution of Engineering and Technology scientists ranked by Research.com in 2026. The highlighted bar marks where Karl D. Hobart sits on this spectrum.

30 D-Index: 59 scientists 31 D-Index: 114 scientists 32 D-Index: 129 scientists 33 D-Index: 189 scientists 34 D-Index: 200 scientists 35 D-Index: 262 scientists 36 D-Index: 311 scientists 37 D-Index: 312 scientists 38 D-Index: 350 scientists 39 D-Index: 385 scientists 40 D-Index: 348 scientists 41 D-Index: 362 scientists 42 D-Index: 426 scientists 43 D-Index: 380 scientists 44 D-Index: 310 scientists 45 D-Index: 341 scientists 46 D-Index: 301 scientists 47 D-Index: 306 scientists 48 D-Index: 271 scientists 49 D-Index: 246 scientists 50 D-Index: 210 scientists 51 D-Index: 253 scientists 52 D-Index: 213 scientists 53 D-Index: 221 scientists 54 D-Index: 195 scientists 55 D-Index: 186 scientists 56 D-Index: 170 scientists 57 D-Index: 167 scientists 58 D-Index: 166 scientists 59 D-Index: 144 scientists 60 D-Index: 152 scientists 61 D-Index: 141 scientists 62 D-Index: 138 scientists 63 D-Index: 131 scientists 64 D-Index: 118 scientists 65 D-Index: 114 scientists 66 D-Index: 119 scientists 67 D-Index: 95 scientists 68 D-Index: 87 scientists 69 D-Index: 77 scientists 70 D-Index: 89 scientists 71 D-Index: 69 scientists 72 D-Index: 54 scientists 73 D-Index: 46 scientists 74 D-Index: 55 scientists 75 D-Index: 54 scientists 76 D-Index: 49 scientists 77 D-Index: 53 scientists 78 D-Index: 46 scientists 79 D-Index: 28 scientists 80 D-Index: 39 scientists 81 D-Index: 36 scientists 82 D-Index: 24 scientists 83 D-Index: 26 scientists 84 D-Index: 36 scientists 85 D-Index: 18 scientists 86 D-Index: 25 scientists 87 D-Index: 19 scientists 88 D-Index: 26 scientists 89 D-Index: 27 scientists 90 D-Index: 23 scientists 91 D-Index: 15 scientists 92 D-Index: 12 scientists 93 D-Index: 9 scientists 94 D-Index: 15 scientists 95 D-Index: 10 scientists 96 D-Index: 13 scientists 97 D-Index: 13 scientists 98 D-Index: 9 scientists 99 D-Index: 7 scientists 100 D-Index: 7 scientists 101 D-Index: 8 scientists 102 D-Index: 7 scientists 103 D-Index: 7 scientists 104 D-Index: 9 scientists 105 D-Index: 6 scientists 106 D-Index: 9 scientists 107+ D-Index: 99 scientists
30 D-Index 107+

This scientist: 45 D-Index — 46th percentile

46% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 107 D-Index or more.

Overview

Karl D. Hobart is affiliated with the United States Naval Research Laboratory in the United States. Their research primarily focuses on materials science, engineering, and physics and astronomy, with a particular emphasis on materials chemistry and electrical and electronic engineering. The work spans several subfields, including condensed matter physics, electronic, optical, and magnetic materials, as well as renewable energy, sustainability, and the environment.

Their main topics of research include:

  • GaN-based semiconductor devices and materials
  • Ga2O3 and related materials
  • ZnO doping and properties
  • Semiconductor materials and devices
  • Silicon Carbide Semiconductor Technologies
  • Advanced Photocatalysis Techniques
  • Thermal properties of materials

Karl D. Hobart has published extensively in several notable venues. The most frequent publication venues include:

  • ECS Meeting Abstracts
  • Applied Physics Letters
  • IEEE Transactions on Electron Devices
  • Journal of Vacuum Science & Technology A Vacuum Surfaces and Films
  • Journal of Electronic Materials

Highlighted recent papers authored or coauthored by Karl D. Hobart include:

  • Integration of polycrystalline Ga2O3 on diamond for thermal management (2020, Applied Physics Letters)
  • Structural transition and recovery of Ge implanted β-Ga2O3 (2020, Applied Physics Letters)
  • High-Resolution Thermoreflectance Imaging Investigation of Self-Heating in AlGaN/GaN HEMTs on Si, SiC, and Diamond Substrates (2020, IEEE Transactions on Electron Devices)
  • Effect of probe geometry during measurement of >100Å Ga2O3 vertical rectifiers (2020, Journal of Vacuum Science & Technology A Vacuum Surfaces and Films)
  • Characterization of β-Ga2O3 homoepitaxial films and MOSFETs grown by MOCVD at high growth rates (2020, Journal of Physics D Applied Physics)

Frequent collaborators working with Karl D. Hobart include:

  • Travis J. Anderson
  • Marko J. Tadjer
  • Alan G. Jacobs
  • James Spencer Lundh
  • James C. Gallagher

Best Publications

  • Technique for the dry transfer of epitaxial graphene onto arbitrary substrates.

    Caldwell Jd;Anderson Tj;Culbertson Jc;Jernigan Gg

  • Technique for the Dry Transfer of Epitaxial Graphene onto Arbitrary Substrates

    Joshua D. Caldwell;Travis J. Anderson;James C. Culbertson;Glenn G. Jernigan

  • Room temperature operation of epitaxially grown Si/Si0.5Ge0.5/Si resonant interband tunneling diodes

    Sean L. Rommel;Thomas E. Dillon;M. W. Dashiell;H. Feng

  • Vertical GaN Junction Barrier Schottky Rectifiers by Selective Ion Implantation

    Yuhao Zhang;Zhihong Liu;Marko J. Tadjer;Min Sun

  • Editors' Choice Communication—A (001) β-Ga2O3 MOSFET with +2.9 V Threshold Voltage and HfO2 Gate Dielectric

    Marko J. Tadjer;Nadeemullah A. Mahadik;Virginia D. Wheeler;Evan R. Glaser

  • Reduced Self-Heating in AlGaN/GaN HEMTs Using Nanocrystalline Diamond Heat-Spreading Films

    M. J. Tadjer;T. J. Anderson;K. D. Hobart;T. I. Feygelson

  • Thermal conductance across β-Ga2O3-diamond van der Waals heterogeneous interfaces

    Zhe Cheng;Luke Yates;Jingjing Shi;Marko J. Tadjer

  • Structural, Optical, and Electrical Characterization of Monoclinic β-Ga 2 O 3 Grown by MOVPE on Sapphire Substrates

    Marko J. Tadjer;Michael A. Mastro;Nadeemullah A. Mahadik;Marc Currie

  • Control of the in-plane thermal conductivity of ultra-thin nanocrystalline diamond films through the grain and grain boundary properties

    Julian Anaya;Stefano Rossi;Mohammed Alomari;Erhard Kohn

  • Anisotropic and inhomogeneous thermal conduction in suspended thin-film polycrystalline diamond

    Aditya Sood;Jungwan Cho;Jungwan Cho;Karl D. Hobart;Tatyana I. Feygelson

  • Compliant substrates: A comparative study of the relaxation mechanisms of strained films bonded to high and low viscosity oxides

    K. D. Hobart;F. J. Kub;M. Fatemi;M. E. Twigg

  • Activation of Mg implanted in GaN by multicycle rapid thermal annealing

    T.J. Anderson;B.N. Feigelson;F.J. Kub;M.J. Tadjer

  • Strain relaxation of SiGe islands on compliant oxide

    H. Yin;R. Huang;K. D. Hobart;Z. Suo

  • On the driving force for recombination-induced stacking fault motion in 4H–SiC

    Joshua D. Caldwell;Robert E. Stahlbush;Mario G. Ancona;Orest J. Glembocki

  • Integration of Atomic Layer Epitaxy Crystalline Ga2O3 on Diamond for Thermal Management

    Zhe Cheng;Virginia D. Wheeler;Tingyu Bai;Jingjing Shi

  • Substrate-Dependent Effects on the Response of AlGaN/GaN HEMTs to 2-MeV Proton Irradiation

    Travis J. Anderson;Andrew D. Koehler;Jordan D. Greenlee;Bradley D. Weaver

  • Experimental observation of localized interfacial phonon modes.

    Zhe Cheng;Zhe Cheng;Ruiyang Li;Xingxu Yan;Glenn Jernigan

  • GaN-On-Diamond HEMT Technology With T AVG = 176°C at P DC,max = 56 W/mm Measured by Transient Thermoreflectance Imaging

    Marko J. Tadjer;Travis J. Anderson;Mario G. Ancona;Peter E. Raad

  • Gate after diamond transistor

    Francis Kub;Karl Hobart

  • Tunable Thermal Energy Transport across Diamond Membranes and Diamond-Si Interfaces by Nanoscale Graphoepitaxy.

    Zhe Cheng;Tingyu Bai;Jingjing Shi;Tianli Feng;Tianli Feng

  • Recombination-induced stacking fault degradation of 4H-SiC merged-PiN-Schottky diodes

    J. D. Caldwell;Robert E. Stahlbush;Eugene A. Imhoff;Karl D. Hobart

  • Ultrathin strained-SOI by stress balance on compliant substrates and FET performance

    Haizhou Yin;K.D. Hobart;R.L. Peterson;F.J. Kub

  • Simultaneous determination of the lattice thermal conductivity and grain/grain thermal resistance in polycrystalline diamond

    J. Anaya;T. Bai;Y. Wang;C. Li

  • Integration of polycrystalline Ga2O3 on diamond for thermal management

    Zhe Cheng;Virginia D. Wheeler;Tingyu Bai;Jingjing Shi

Frequent Co-Authors

Marko J. Tadjer
Marko J. Tadjer United States Naval Research Laboratory
Francis J. Kub
Francis J. Kub United States Naval Research Laboratory
Charles R. Eddy
Charles R. Eddy United States Naval Research Laboratory
Joshua D. Caldwell
Joshua D. Caldwell Vanderbilt University
James C. Sturm
James C. Sturm Princeton University
Mario G. Ancona
Mario G. Ancona United States Naval Research Laboratory
D. Kurt Gaskill
D. Kurt Gaskill United States Naval Research Laboratory
Thomas S. Duffy
Thomas S. Duffy Princeton University
Mark S. Goorsky
Mark S. Goorsky University of California, Los Angeles
Roger K. Lake
Roger K. Lake University of California, Riverside

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