World's Best Scientists 2026 revealed!

D-Index & Metrics

Materials Science

D-Index
69
Citations
17124
World Ranking
4642
National Ranking
1234

Samuel Graham publication distribution in Materials Science in 2026

The chart shows the distribution of publications by all Research.com ranked scientists in the field of Materials Science in 2026. The highlighted bar marks where Samuel Graham sits on this spectrum.

50–69 publications: 28 scientists 70–89 publications: 152 scientists 90–109 publications: 356 scientists 110–129 publications: 487 scientists 130–149 publications: 723 scientists 150–169 publications: 835 scientists 170–189 publications: 850 scientists 190–209 publications: 891 scientists 210–229 publications: 862 scientists 230–249 publications: 766 scientists 250–269 publications: 726 scientists 270–289 publications: 665 scientists 290–309 publications: 593 scientists 310–329 publications: 537 scientists 330–349 publications: 477 scientists 350–369 publications: 440 scientists 370–389 publications: 356 scientists 390–409 publications: 321 scientists 410–429 publications: 256 scientists 430–449 publications: 246 scientists 450–469 publications: 216 scientists 470–489 publications: 212 scientists 490–509 publications: 174 scientists 510–529 publications: 194 scientists 530–549 publications: 162 scientists 550–569 publications: 131 scientists 570–589 publications: 111 scientists 590–609 publications: 103 scientists 610–629 publications: 99 scientists 630–649 publications: 77 scientists 650–669 publications: 92 scientists 670–689 publications: 56 scientists 690–709 publications: 53 scientists 710–729 publications: 53 scientists 730–749 publications: 38 scientists 750–769 publications: 52 scientists 770–789 publications: 43 scientists 790–809 publications: 38 scientists 810–829 publications: 34 scientists 830–849 publications: 25 scientists 850–869 publications: 18 scientists 870–889 publications: 20 scientists 890–909 publications: 24 scientists 910–929 publications: 27 scientists 930–949 publications: 20 scientists 950–969 publications: 17 scientists 970–989 publications: 10 scientists 990–1,009 publications: 16 scientists 1,010–1,029 publications: 13 scientists 1,030–1,049 publications: 12 scientists 1,050–1,069 publications: 9 scientists 1,070–1,089 publications: 8 scientists 1,090–1,109 publications: 7 scientists 1,110–1,129 publications: 9 scientists 1,130–1,149 publications: 2 scientists 1,150–1,162 publications: 5 scientists 1,163+ publications: 100 scientists
50 publications 1,163+

This scientist: 361 publications — 72nd percentile

72% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 1,163 publications or more.

Samuel Graham D-index placement in Materials Science in 2026

The chart shows the D-index (discipline H-index) distribution of Materials Science scientists ranked by Research.com in 2026. The highlighted bar marks where Samuel Graham sits on this spectrum.

40–41 D-Index: 211 scientists 42–43 D-Index: 450 scientists 44–45 D-Index: 612 scientists 46–47 D-Index: 612 scientists 48–49 D-Index: 598 scientists 50–51 D-Index: 657 scientists 52–53 D-Index: 667 scientists 54–55 D-Index: 621 scientists 56–57 D-Index: 597 scientists 58–59 D-Index: 610 scientists 60–61 D-Index: 587 scientists 62–63 D-Index: 606 scientists 64–65 D-Index: 533 scientists 66–67 D-Index: 490 scientists 68–69 D-Index: 469 scientists 70–71 D-Index: 378 scientists 72–73 D-Index: 421 scientists 74–75 D-Index: 359 scientists 76–77 D-Index: 323 scientists 78–79 D-Index: 299 scientists 80–81 D-Index: 230 scientists 82–83 D-Index: 210 scientists 84–85 D-Index: 195 scientists 86–87 D-Index: 203 scientists 88–89 D-Index: 175 scientists 90–91 D-Index: 175 scientists 92–93 D-Index: 142 scientists 94–95 D-Index: 121 scientists 96–97 D-Index: 117 scientists 98–99 D-Index: 107 scientists 100–101 D-Index: 88 scientists 102–103 D-Index: 85 scientists 104–105 D-Index: 68 scientists 106–107 D-Index: 62 scientists 108–109 D-Index: 57 scientists 110–111 D-Index: 45 scientists 112–113 D-Index: 49 scientists 114–115 D-Index: 50 scientists 116–117 D-Index: 34 scientists 118–119 D-Index: 38 scientists 120–121 D-Index: 37 scientists 122–123 D-Index: 29 scientists 124–125 D-Index: 28 scientists 126–127 D-Index: 24 scientists 128–129 D-Index: 33 scientists 130–131 D-Index: 28 scientists 132–133 D-Index: 21 scientists 134–135 D-Index: 20 scientists 136–137 D-Index: 23 scientists 138–139 D-Index: 17 scientists 140–141 D-Index: 12 scientists 142–143 D-Index: 17 scientists 144–145 D-Index: 21 scientists 146–147 D-Index: 13 scientists 148–149 D-Index: 11 scientists 150–151 D-Index: 14 scientists 152–153 D-Index: 13 scientists 154–155 D-Index: 9 scientists 156–157 D-Index: 10 scientists 158–159 D-Index: 7 scientists 160–161 D-Index: 4 scientists 162–163 D-Index: 4 scientists 164 D-Index: 3 scientists 165+ D-Index: 98 scientists
40 D-Index 165+

This scientist: 69 D-Index — 65th percentile

65% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 165 D-Index or more.

Overview

Samuel Graham is a researcher affiliated with the Georgia Institute of Technology in the United States. Their primary focus areas span materials science and engineering, with a significant emphasis on materials chemistry and electrical and electronic engineering.

Their research explores a variety of topics including:

  • Thermal properties of materials
  • GaN-based semiconductor devices and materials
  • Ga2O3 and related materials
  • ZnO doping and properties
  • Semiconductor materials and devices
  • Silicon Carbide Semiconductor Technologies
  • Advanced Memory and Neural Computing

Samuel Graham's frequent publication venues include:

  • ACS Applied Materials & Interfaces
  • Applied Physics Letters
  • ECS Meeting Abstracts
  • Journal of Applied Physics
  • arXiv (Cornell University)

They have collaborated extensively with other researchers, including:

  • Zhe Cheng
  • Jingjing Shi
  • Mark S. Goorsky
  • Patrick E. Hopkins
  • Kenny Huynh

Among recent publications by Samuel Graham are:

  • β-Gallium oxide power electronics, 2022, APL Materials
  • Interfacial Thermal Conductance across Room-Temperature-Bonded GaN/Diamond Interfaces for GaN-on-Diamond Devices, 2020, ACS Applied Materials & Interfaces
  • Experimental observation of high intrinsic thermal conductivity of AlN, 2020, Physical Review Materials
  • High In-Plane Thermal Conductivity of Aluminum Nitride Thin Films, 2021, ACS Nano
  • High thermal conductivity in wafer-scale cubic silicon carbide crystals, 2022, Nature Communications

Best Publications

  • A Universal Method to Produce Low―Work Function Electrodes for Organic Electronics

    Yinhua Zhou;Canek Fuentes-Hernandez;Jaewon Shim;Jens Meyer

  • Ultrawide-Bandgap Semiconductors: Research Opportunities and Challenges

    J. Y. Tsao;S. Chowdhury;M. A. Hollis;D. Jena

  • Thermal effects in packaging high power light emitting diode arrays

    Adam Christensen;Samuel Graham

  • Electrical, Thermal, and Mechanical Characterization of Silicon Microcantilever Heaters

    Jungchul Lee;T. Beechem;T.L. Wright;B.A. Nelson

  • Highly Tunable Molecular Sieving and Adsorption Properties of Mixed-Linker Zeolitic Imidazolate Frameworks

    Kiwon Eum;Krishna C. Jayachandrababu;Fereshteh Rashidi;Ke Zhang

  • Controlled Doping of Large‐Area Trilayer MoS2 with Molecular Reductants and Oxidants

    Alexey Tarasov;Siyuan Zhang;Meng-Yen Tsai;Philip M. Campbell

  • Stability of Doped Transparent Carbon Nanotube Electrodes

    Roderick Jackson;Benoit Domercq;Rishabh Jain;Bernard Kippelen

  • Invited Article: Simultaneous mapping of temperature and stress in microdevices using micro-Raman spectroscopy.

    Thomas Beechem;Samuel Graham;Sean P. Kearney;Leslie M. Phinney

  • Interfacial Thermal Conductance across Room-Temperature-Bonded GaN/Diamond Interfaces for GaN-on-Diamond Devices.

    Zhe Cheng;Fengwen Mu;Fengwen Mu;Luke Yates;Tadatomo Suga

  • Solution-based electrical doping of semiconducting polymer films over a limited depth

    Vladimir A. Kolesov;Canek Fuentes-Hernandez;Wen-Fang Chou;Naoya Aizawa

  • Elastomer-Polymer Semiconductor Blends for High-Performance Stretchable Charge Transport Networks

    Dalsu Choi;Hyungchul Kim;Nils Persson;Ping-Hsun Chu

  • Void growth in 6061-aluminum alloy under triaxial stress state

    H Agarwal;A.M Gokhale;S Graham;M.F Horstemeyer

  • Experimental observation of high intrinsic thermal conductivity of AlN

    Zhe Cheng;Yee Rui Koh;Abdullah Mamun;Jingjing Shi

  • Thermal analysis of near-isothermal compressed gas energy storage system

    Adewale Odukomaiya;Ahmad Abu-Heiba;Kyle R. Gluesenkamp;Omar Abdelaziz

  • Influence of Interfacial Mixing on Thermal Boundary Conductance Across a Chromium/Silicon Interface

    Patrick E. Hopkins;Pamela M. Norris;Robert J. Stevens;Thomas E. Beechem

  • Review of stability and thermal conductivity enhancements for salt hydrates

    Navin Kumar;Jason Hirschey;Tim J. LaClair;Kyle R. Gluesenkamp

  • Low Thermal Boundary Resistance Interfaces for GaN-on-Diamond Devices

    Luke Yates;Jonathan Anderson;Xing Gu;Cathy Lee

  • Thermal conductance across β-Ga2O3-diamond van der Waals heterogeneous interfaces

    Zhe Cheng;Luke Yates;Jingjing Shi;Marko J. Tadjer

  • A metallization and bonding approach for high performance carbon nanotube thermal interface materials

    Robert Cross;Baratunde A Cola;Timothy Fisher;Xianfan Xu

  • High In-Plane Thermal Conductivity of Aluminum Nitride Thin Films.

    Shafkat Bin Hoque;Yee Rui Koh;Jeffrey L Braun;Abdullah Mamun

  • Highly Uniform Trilayer Molybdenum Disulfide for Wafer-Scale Device Fabrication

    Alexey Tarasov;Philip M. Campbell;Meng-Yen Tsai;Zohreh R. Hesabi

  • Stability of inverted organic solar cells with ZnO contact layers deposited from precursor solutions

    Bradley A. MacLeod;Bertrand J. Tremolet de Villers;Philip Schulz;Paul F. Ndione

  • Role of interface disorder on thermal boundary conductance using a virtual crystal approach

    Thomas Beechem;Samuel Graham;Patrick Hopkins;Pamela Norris

  • A hybrid encapsulation method for organic electronics

    N. Kim;W. J. Potscavage;B. Domercq;B. Kippelen

  • Thermal conduction from microcantilever heaters in partial vacuum

    Jung Chul Lee;Tanya L. Wright;Mark R. Abel;Erik Oscar Sunden

Frequent Co-Authors

Mark S. Goorsky
Mark S. Goorsky University of California, Los Angeles
Bernard Kippelen
Bernard Kippelen Georgia Institute of Technology
Patrick E. Hopkins
Patrick E. Hopkins University of Virginia
William P. King
William P. King University of Illinois at Urbana-Champaign
Canek Fuentes-Hernandez
Canek Fuentes-Hernandez Northeastern University
Seth R. Marder
Seth R. Marder University of Colorado Boulder
Tengfei Luo
Tengfei Luo University of Notre Dame
Marko J. Tadjer
Marko J. Tadjer United States Naval Research Laboratory
Joseph J. Berry
Joseph J. Berry National Renewable Energy Laboratory
Mark F. Horstemeyer
Mark F. Horstemeyer Liberty University

If you think any of the details on this page are incorrect, let us know.

Report an issue

We appreciate your kind effort to assist us to improve this page, it would be helpful providing us with as much detail as possible in the text box below:

Best Scientists Citing Samuel Graham

Trending Scientists

Recently Published Articles