World's Best Scientists 2026 revealed!

D-Index & Metrics

Electronics and Electrical Engineering

D-Index
64
Citations
15490
World Ranking
1300
National Ranking
61

Materials Science

D-Index
67
Citations
16835
World Ranking
5090
National Ranking
199

Martin Kuball publication distribution in Electronics and Electrical Engineering in 2026

The chart shows the distribution of publications by all Research.com ranked scientists in the field of Electronics and Electrical Engineering in 2026. The highlighted bar marks where Martin Kuball sits on this spectrum.

34–53 publications: 24 scientists 54–73 publications: 52 scientists 74–93 publications: 114 scientists 94–113 publications: 203 scientists 114–133 publications: 269 scientists 134–153 publications: 355 scientists 154–173 publications: 403 scientists 174–193 publications: 445 scientists 194–213 publications: 430 scientists 214–233 publications: 431 scientists 234–253 publications: 399 scientists 254–273 publications: 366 scientists 274–293 publications: 335 scientists 294–313 publications: 300 scientists 314–333 publications: 276 scientists 334–353 publications: 250 scientists 354–373 publications: 214 scientists 374–393 publications: 187 scientists 394–413 publications: 152 scientists 414–433 publications: 169 scientists 434–453 publications: 147 scientists 454–473 publications: 111 scientists 474–493 publications: 117 scientists 494–513 publications: 103 scientists 514–533 publications: 99 scientists 534–553 publications: 92 scientists 554–573 publications: 75 scientists 574–593 publications: 58 scientists 594–613 publications: 69 scientists 614–633 publications: 50 scientists 634–653 publications: 62 scientists 654–673 publications: 54 scientists 674–693 publications: 44 scientists 694–713 publications: 37 scientists 714–733 publications: 28 scientists 734–753 publications: 26 scientists 754–773 publications: 26 scientists 774–793 publications: 19 scientists 794–813 publications: 23 scientists 814–833 publications: 20 scientists 834–853 publications: 16 scientists 854–873 publications: 20 scientists 874–893 publications: 11 scientists 894–913 publications: 11 scientists 914–933 publications: 16 scientists 934–953 publications: 13 scientists 954–973 publications: 10 scientists 974–993 publications: 11 scientists 994–1,013 publications: 9 scientists 1,014–1,033 publications: 9 scientists 1,034–1,053 publications: 10 scientists 1,054–1,064 publications: 6 scientists 1,065+ publications: 99 scientists
34 publications 1,065+

This scientist: 462 publications — 81st percentile

81% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 1,065 publications or more.

Martin Kuball D-index placement in Electronics and Electrical Engineering in 2026

The chart shows the D-index (discipline H-index) distribution of Electronics and Electrical Engineering scientists ranked by Research.com in 2026. The highlighted bar marks where Martin Kuball sits on this spectrum.

30 D-Index: 178 scientists 31 D-Index: 257 scientists 32 D-Index: 263 scientists 33 D-Index: 262 scientists 34 D-Index: 244 scientists 35 D-Index: 236 scientists 36 D-Index: 211 scientists 37 D-Index: 220 scientists 38 D-Index: 214 scientists 39 D-Index: 214 scientists 40 D-Index: 205 scientists 41 D-Index: 187 scientists 42 D-Index: 194 scientists 43 D-Index: 201 scientists 44 D-Index: 155 scientists 45 D-Index: 189 scientists 46 D-Index: 148 scientists 47 D-Index: 160 scientists 48 D-Index: 134 scientists 49 D-Index: 130 scientists 50 D-Index: 141 scientists 51 D-Index: 156 scientists 52 D-Index: 108 scientists 53 D-Index: 130 scientists 54 D-Index: 112 scientists 55 D-Index: 97 scientists 56 D-Index: 111 scientists 57 D-Index: 102 scientists 58 D-Index: 108 scientists 59 D-Index: 120 scientists 60 D-Index: 103 scientists 61 D-Index: 93 scientists 62 D-Index: 92 scientists 63 D-Index: 74 scientists 64 D-Index: 77 scientists 65 D-Index: 73 scientists 66 D-Index: 64 scientists 67 D-Index: 69 scientists 68 D-Index: 60 scientists 69 D-Index: 39 scientists 70 D-Index: 57 scientists 71 D-Index: 59 scientists 72 D-Index: 46 scientists 73 D-Index: 49 scientists 74 D-Index: 38 scientists 75 D-Index: 35 scientists 76 D-Index: 32 scientists 77 D-Index: 35 scientists 78 D-Index: 31 scientists 79 D-Index: 22 scientists 80 D-Index: 34 scientists 81 D-Index: 31 scientists 82 D-Index: 34 scientists 83 D-Index: 23 scientists 84 D-Index: 18 scientists 85 D-Index: 30 scientists 86 D-Index: 19 scientists 87 D-Index: 19 scientists 88 D-Index: 20 scientists 89 D-Index: 8 scientists 90 D-Index: 17 scientists 91 D-Index: 7 scientists 92 D-Index: 14 scientists 93 D-Index: 9 scientists 94 D-Index: 15 scientists 95 D-Index: 10 scientists 96 D-Index: 12 scientists 97 D-Index: 10 scientists 98 D-Index: 10 scientists 99 D-Index: 12 scientists 100 D-Index: 16 scientists 101 D-Index: 5 scientists 102 D-Index: 7 scientists 103 D-Index: 7 scientists 104 D-Index: 8 scientists 105 D-Index: 9 scientists 106 D-Index: 13 scientists 107 D-Index: 4 scientists 108 D-Index: 5 scientists 109 D-Index: 10 scientists 110 D-Index: 8 scientists 111+ D-Index: 96 scientists
30 D-Index 111+

This scientist: 64 D-Index — 82nd percentile

82% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 111 D-Index or more.

Research.com Recognitions

  • 2020 - IEEE Fellow For contributions to Raman thermography in semiconductor devices
  • 2018 - Fellow of the Materials Research Society For pioneering contributions to the characterization of heat transport in ultrahigh thermal conductivity materials and their integration into microwave and power electronics.
  • 2018 - SPIE Fellow

Overview

Martin Kuball is affiliated with the University of Bristol in the United Kingdom. Their research primarily focuses on materials science and engineering, with specific expertise in the field of semiconductor device materials, especially Gallium Nitride (GaN) and related compounds.

The main fields of study covered in their research include:

  • Materials Science
  • Engineering

Subfields of study in which they are active include:

  • Materials Chemistry
  • Electrical and Electronic Engineering
  • Condensed Matter Physics
  • Electronic, Optical and Magnetic Materials
  • Mechanics of Materials

The key research topics they have contributed to are:

  • GaN-based semiconductor devices and materials
  • Ga2O3 and related materials
  • Semiconductor materials and devices
  • ZnO doping and properties
  • Thermal properties of materials
  • Metal and Thin Film Mechanics
  • Silicon Carbide Semiconductor Technologies

Martin Kuball has published numerous papers, including studies on thermal boundary resistance and diamond interfacing with semiconductor materials. Some recent publications are:

  • Record-Low Thermal Boundary Resistance between Diamond and GaN-on-SiC for Enabling Radiofrequency Device Cooling, 2021, ACS Applied Materials & Interfaces
  • Crystalline Interlayers for Reducing the Effective Thermal Boundary Resistance in GaN-on-Diamond, 2020, ACS Applied Materials & Interfaces
  • Mixed-size diamond seeding for low-thermal-barrier growth of CVD diamond onto GaN and AlN, 2020, Carbon
  • Thermal boundary resistance of direct van der Waals bonded GaN-on-diamond, 2020, Semiconductor Science and Technology
  • Thermal stress modelling of diamond on GaN/III-Nitride membranes, 2020, Carbon

The frequent co-authors with whom Martin Kuball has collaborated include:

  • James W. Pomeroy
  • Michael J. Uren
  • Matthew D. Smith
  • D. Field
  • Abhishek Mishra

Prominent venues for their publications are:

  • Applied Physics Letters
  • IEEE Transactions on Electron Devices
  • IEEE Electron Device Letters
  • Carbon
  • ACS Applied Electronic Materials

Martin Kuball's work has been recognized through multiple honors, including:

  • IEEE Fellow (2020), for contributions to Raman thermography in semiconductor devices
  • SPIE Fellow (2018)
  • Fellow of the Materials Research Society (2018), for pioneering contributions to the characterization of heat transport in ultrahigh thermal conductivity materials and their integration into microwave and power electronics

Best Publications

  • The 2018 GaN power electronics roadmap

    H Amano;Y Baines;Matteo Borga

  • Raman spectroscopy of GaN, AlGaN and AlN for process and growth monitoring/control

    Martin H H Kuball

  • Measurement of temperature in active high-power AlGaN/GaN HFETs using Raman spectroscopy

    M. Kuball;J.M. Hayes;M.J. Uren;I. Martin

  • Buffer Design to Minimize Current Collapse in GaN/AlGaN HFETs

    M. J. Uren;J. Moreke;M. Kuball

  • Thermal Boundary Resistance Between GaN and Substrate in AlGaN/GaN Electronic Devices

    A. Sarua;Hangfeng Ji;K.P. Hilton;D.J. Wallis

  • Integrated micro-Raman/infrared thermography probe for monitoring of self-heating in AlGaN/GaN transistor structures

    A. Sarua;Hangfeng Ji;M. Kuball;M.J. Uren

  • Modulating the thermal conductivity in hexagonal boron nitride via controlled boron isotope concentration

    Chao Yuan;Jiahan Li;Lucas Lindsay;David Cherns

  • “Leaky Dielectric” Model for the Suppression of Dynamic $R_{\mathrm{ON}}$ in Carbon-Doped AlGaN/GaN HEMTs

    Michael J. Uren;Serge Karboyan;Indranil Chatterjee;Alexander Pooth

  • Measurement of temperature distribution in multifinger AlGaN/GaN heterostructure field-effect transistors using micro-Raman spectroscopy

    Martin H H Kuball;S Rajasingam;Andrei Sarua;MJ Uren

  • Benchmarking of Thermal Boundary Resistance in AlGaN/GaN HEMTs on SiC Substrates: Implications of the Nucleation Layer Microstructure

    A Manoi;J W Pomeroy;N Killat;M Kuball

  • A study of the phase diagram of (K,Na,Li)NbO3 determined by dielectric and piezoelectric measurements, and Raman spectroscopy

    Naama Klein;Evelyn Hollenstein;Dragan Damjanovic;H. J. Trodahl

  • Low thermal resistance GaN-on-diamond transistors characterized by three-dimensional Raman thermography mapping

    James W Pomeroy;Mirko Bernardoni;Deep Dumka;Dave Fanning

  • Reducing GaN-on-diamond interfacial thermal resistance for high power transistor applications

    Huarui Sun;Roland B. Simon;James W Pomeroy;Daniel Francis

  • Raman scattering studies on single-crystalline bulk AlN under high pressures

    M. Kuball;J. M. Hayes;A. D. Prins;N. W. Van Uden

  • Time-Resolved Temperature Measurement of AlGaN/GaN Electronic Devices Using Micro-Raman Spectroscopy

    M. Kuball;G.J. Riedel;J.W. Pomeroy;A. Sarua

  • Integrated Optical and Electrical Analysis: Identifying Location and Properties of Traps in AlGaN/GaN HEMTs During Electrical Stress

    Milan Ťapajna;Richard J T Simms;Yi Pei;Umesh K Mishra

  • Iron-induced deep-level acceptor center in GaN/AlGaN high electron mobility transistors: Energy level and cross section

    Marco Silvestri;Michael J. Uren;Martin Kuball

  • Recombination dynamics in InGaN quantum wells

    ES Jeon;V Kozlov;Y-K Song;A Vertikov

  • Self-heating effects at high pump currents in deep ultraviolet light-emitting diodes at 324 nm

    A. Chitnis;J. Sun;V. Mandavilli;R. Pachipulusu

  • Channel Temperature Determination in High-Power AlGaN/GaN HFETs Using Electrical Methods and Raman Spectroscopy

    R.J.T. Simms;J.W. Pomeroy;M.J. Uren;T. Martin

Frequent Co-Authors

Michael J. Uren
Michael J. Uren University of Bristol
James H. Edgar
James H. Edgar Kansas State University
Arto V. Nurmikko
Arto V. Nurmikko Brown University
Michael Dudley
Michael Dudley Stony Brook University
David R. S. Cumming
David R. S. Cumming University of Glasgow
Paul J. Tasker
Paul J. Tasker Cardiff University
Rachel A. Oliver
Rachel A. Oliver University of Cambridge
Nicolas Grandjean
Nicolas Grandjean École Polytechnique Fédérale de Lausanne
Ion Tiginyanu
Ion Tiginyanu Technical University of Moldova

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