World's Best Scientists 2026 revealed!

D-Index & Metrics

Electronics and Electrical Engineering

D-Index
64
Citations
15490
World Ranking
1300
National Ranking
61

Materials Science

D-Index
67
Citations
16835
World Ranking
5092
National Ranking
199

Research.com Recognitions

  • 2020 - IEEE Fellow For contributions to Raman thermography in semiconductor devices
  • 2018 - Fellow of the Materials Research Society For pioneering contributions to the characterization of heat transport in ultrahigh thermal conductivity materials and their integration into microwave and power electronics.
  • 2018 - SPIE Fellow

Overview

Martin Kuball is affiliated with the University of Bristol in the United Kingdom. Their research primarily focuses on materials science and engineering, with specific expertise in the field of semiconductor device materials, especially Gallium Nitride (GaN) and related compounds.

The main fields of study covered in their research include:

  • Materials Science
  • Engineering

Subfields of study in which they are active include:

  • Materials Chemistry
  • Electrical and Electronic Engineering
  • Condensed Matter Physics
  • Electronic, Optical and Magnetic Materials
  • Mechanics of Materials

The key research topics they have contributed to are:

  • GaN-based semiconductor devices and materials
  • Ga2O3 and related materials
  • Semiconductor materials and devices
  • ZnO doping and properties
  • Thermal properties of materials
  • Metal and Thin Film Mechanics
  • Silicon Carbide Semiconductor Technologies

Martin Kuball has published numerous papers, including studies on thermal boundary resistance and diamond interfacing with semiconductor materials. Some recent publications are:

  • Record-Low Thermal Boundary Resistance between Diamond and GaN-on-SiC for Enabling Radiofrequency Device Cooling, 2021, ACS Applied Materials & Interfaces
  • Crystalline Interlayers for Reducing the Effective Thermal Boundary Resistance in GaN-on-Diamond, 2020, ACS Applied Materials & Interfaces
  • Mixed-size diamond seeding for low-thermal-barrier growth of CVD diamond onto GaN and AlN, 2020, Carbon
  • Thermal boundary resistance of direct van der Waals bonded GaN-on-diamond, 2020, Semiconductor Science and Technology
  • Thermal stress modelling of diamond on GaN/III-Nitride membranes, 2020, Carbon

The frequent co-authors with whom Martin Kuball has collaborated include:

  • James W. Pomeroy
  • Michael J. Uren
  • Matthew D. Smith
  • D. Field
  • Abhishek Mishra

Prominent venues for their publications are:

  • Applied Physics Letters
  • IEEE Transactions on Electron Devices
  • IEEE Electron Device Letters
  • Carbon
  • ACS Applied Electronic Materials

Martin Kuball's work has been recognized through multiple honors, including:

  • IEEE Fellow (2020), for contributions to Raman thermography in semiconductor devices
  • SPIE Fellow (2018)
  • Fellow of the Materials Research Society (2018), for pioneering contributions to the characterization of heat transport in ultrahigh thermal conductivity materials and their integration into microwave and power electronics

Best Publications

  • The 2018 GaN power electronics roadmap

    H Amano;Y Baines;Matteo Borga

  • Raman spectroscopy of GaN, AlGaN and AlN for process and growth monitoring/control

    Martin H H Kuball

  • Measurement of temperature in active high-power AlGaN/GaN HFETs using Raman spectroscopy

    M. Kuball;J.M. Hayes;M.J. Uren;I. Martin

  • Buffer Design to Minimize Current Collapse in GaN/AlGaN HFETs

    M. J. Uren;J. Moreke;M. Kuball

  • Thermal Boundary Resistance Between GaN and Substrate in AlGaN/GaN Electronic Devices

    A. Sarua;Hangfeng Ji;K.P. Hilton;D.J. Wallis

  • Integrated micro-Raman/infrared thermography probe for monitoring of self-heating in AlGaN/GaN transistor structures

    A. Sarua;Hangfeng Ji;M. Kuball;M.J. Uren

  • Modulating the thermal conductivity in hexagonal boron nitride via controlled boron isotope concentration

    Chao Yuan;Jiahan Li;Lucas Lindsay;David Cherns

  • “Leaky Dielectric” Model for the Suppression of Dynamic $R_{\mathrm{ON}}$ in Carbon-Doped AlGaN/GaN HEMTs

    Michael J. Uren;Serge Karboyan;Indranil Chatterjee;Alexander Pooth

  • Measurement of temperature distribution in multifinger AlGaN/GaN heterostructure field-effect transistors using micro-Raman spectroscopy

    Martin H H Kuball;S Rajasingam;Andrei Sarua;MJ Uren

  • Benchmarking of Thermal Boundary Resistance in AlGaN/GaN HEMTs on SiC Substrates: Implications of the Nucleation Layer Microstructure

    A Manoi;J W Pomeroy;N Killat;M Kuball

  • A study of the phase diagram of (K,Na,Li)NbO3 determined by dielectric and piezoelectric measurements, and Raman spectroscopy

    Naama Klein;Evelyn Hollenstein;Dragan Damjanovic;H. J. Trodahl

  • Low thermal resistance GaN-on-diamond transistors characterized by three-dimensional Raman thermography mapping

    James W Pomeroy;Mirko Bernardoni;Deep Dumka;Dave Fanning

  • Reducing GaN-on-diamond interfacial thermal resistance for high power transistor applications

    Huarui Sun;Roland B. Simon;James W Pomeroy;Daniel Francis

  • Raman scattering studies on single-crystalline bulk AlN under high pressures

    M. Kuball;J. M. Hayes;A. D. Prins;N. W. Van Uden

  • Time-Resolved Temperature Measurement of AlGaN/GaN Electronic Devices Using Micro-Raman Spectroscopy

    M. Kuball;G.J. Riedel;J.W. Pomeroy;A. Sarua

  • Integrated Optical and Electrical Analysis: Identifying Location and Properties of Traps in AlGaN/GaN HEMTs During Electrical Stress

    Milan Ťapajna;Richard J T Simms;Yi Pei;Umesh K Mishra

  • Iron-induced deep-level acceptor center in GaN/AlGaN high electron mobility transistors: Energy level and cross section

    Marco Silvestri;Michael J. Uren;Martin Kuball

  • Recombination dynamics in InGaN quantum wells

    ES Jeon;V Kozlov;Y-K Song;A Vertikov

  • Self-heating effects at high pump currents in deep ultraviolet light-emitting diodes at 324 nm

    A. Chitnis;J. Sun;V. Mandavilli;R. Pachipulusu

  • Channel Temperature Determination in High-Power AlGaN/GaN HFETs Using Electrical Methods and Raman Spectroscopy

    R.J.T. Simms;J.W. Pomeroy;M.J. Uren;T. Martin

Frequent Co-Authors

Michael J. Uren
Michael J. Uren University of Bristol
James H. Edgar
James H. Edgar Kansas State University
Arto V. Nurmikko
Arto V. Nurmikko Brown University
Michael Dudley
Michael Dudley Stony Brook University
David R. S. Cumming
David R. S. Cumming University of Glasgow
Paul J. Tasker
Paul J. Tasker Cardiff University
Rachel A. Oliver
Rachel A. Oliver University of Cambridge
Nicolas Grandjean
Nicolas Grandjean École Polytechnique Fédérale de Lausanne
Ion Tiginyanu
Ion Tiginyanu Technical University of Moldova

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