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Materials Science

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Research.com Recognitions

  • 2019 - IEEE Fellow For contributions to quantum mechanical electronic device modeling

Overview

Roger K. Lake is affiliated with the University of California, Riverside, in the United States. Their research spans the fields of Materials Science and Physics and Astronomy, with a focus on several key subfields, including Materials Chemistry, Atomic and Molecular Physics and Optics, Electrical and Electronic Engineering, Electronic, Optical and Magnetic Materials, and Condensed Matter Physics.

The scientist's work prominently centers on topics such as 2D Materials and Applications, Graphene research and applications, Topological Materials and Phenomena, Quantum and electron transport phenomena, Magnetic properties of thin films, Organic and Molecular Conductors Research, and MXene and MAX Phase Materials.

Roger K. Lake has published frequently in venues such as arXiv (Cornell University), Physical Review B, Applied Physics Letters, Physical Review Applied, and Physical Review Materials. These platforms have hosted a variety of their research contributions over time.

Frequent collaborators include Alexander A. Balandin, Fariborz Kargar, Topojit Debnath, Sohee Kwon, and Tina T. Salguero, reflecting ongoing partnerships within their research network.

Selected recent publications include:

  • One-dimensional van der Waals quantum materials, 2022, Materials Today
  • Phonon and Thermal Properties of Quasi-Two-Dimensional FePS3 and MnPS3 Antiferromagnetic Semiconductors, 2020, ACS Nano
  • Magnetic properties of NbSi2N4, VSi2N4, and VSi2P4 monolayers, 2021, Applied Physics Letters
  • Skyrmion-Based Programmable Logic Device with Complete Boolean Logic Functions, 2021, Physical Review Applied
  • Enabling fast-charging capability for all-solid-state lithium-ion batteries, 2023, Journal of Power Sources

In 2019, they were recognized as an IEEE Fellow for contributions to quantum mechanical electronic device modeling.

Best Publications

  • Single and multiband modeling of quantum electron transport through layered semiconductor devices

    Roger Lake;Gerhard Klimeck;R. Chris Bowen;Dejan Jovanovic

  • Tin disulfide-an emerging layered metal dichalcogenide semiconductor: materials properties and device characteristics.

    Yuan Huang;Eli Sutter;Jerzy T. Sadowski;Mircea Cotlet

  • Thermal Percolation Threshold and Thermal Properties of Composites with High Loading of Graphene and Boron Nitride Fillers

    Fariborz Kargar;Zahra Barani;Ruben Salgado;Bishwajit Debnath

  • Nonequilibrium Green’s-function method applied to double-barrier resonant-tunneling diodes

    Roger Lake;Supriyo Datta

  • Electronic and thermoelectric properties of few-layer transition metal dichalcogenides.

    Darshana Wickramaratne;Ferdows Zahid;Roger K. Lake

  • Gate tunable quantum oscillations in air-stable and high mobility few-layer phosphorene heterostructures

    Nathaniel Gillgren;Darshana Wickramaratne;Yanmeng Shi;Tim Espiritu

  • Thermal conductivity of graphene with defects induced by electron beam irradiation

    Hoda Malekpour;Pankaj Ramnani;Srilok Srinivasan;Ganesh Balasubramanian

  • Electronic properties of silicon nanowires

    Yun Zheng;C. Rivas;R. Lake;K. Alam

  • A charge-density-wave oscillator based on an integrated tantalum disulfide–boron nitride–graphene device operating at room temperature

    Guanxiong Liu;Bishwajit Debnath;Timothy R. Pope;Tina T. Salguero

  • Charge density waves in exfoliated films of van der Waals materials: evolution of Raman spectrum in TiSe2.

    Pradyumna Goli;Javed Khan;Darshana Wickramaratne;Roger K. Lake

  • One-dimensional van der Waals quantum materials

    Unknown

  • Quantitative simulation of a resonant tunneling diode

    R. Chris Bowen;Gerhard Klimeck;Roger K. Lake;William R. Frensley

  • Room temperature operation of epitaxially grown Si/Si0.5Ge0.5/Si resonant interband tunneling diodes

    Sean L. Rommel;Thomas E. Dillon;M. W. Dashiell;H. Feng

  • Spin-phonon coupling in antiferromagnetic nickel oxide

    E. Aytan;B. Debnath;F. Kargar;Y. Barlas

  • Quantum device simulation with a generalized tunneling formula

    Gerhard Klimeck;Roger Lake;R. Chris Bowen;William R. Frensley

  • Electronic and thermoelectric properties of van der Waals materials with ring-shaped valence bands

    Darshana Wickramaratne;Ferdows Zahid;Roger K. Lake

  • Monolayer $\hbox{MoS}_{2}$ Transistors Beyond the Technology Road Map

    K. Alam;R. K. Lake

  • Thermal Conductivity of Suspended Graphene with Defects

    Hoda Malekpour;Pankaj Ramnani;Srilok Srinivasan;Ganesh Balasubramanian

  • Towards van der Waals Epitaxial Growth of GaAs on Si using a Graphene Buffer Layer

    Yazeed Alaskar;Yazeed Alaskar;Shamsul Arafin;Darshana Wickramaratne;Mark A. Zurbuchen

  • Thermoelectric properties of Bi2Te3 atomic quintuple thin films

    Ferdows Zahid;Roger Lake

  • Fundamentals of lateral and vertical heterojunctions of atomically thin materials.

    Anupum Pant;Zafer Mutlu;Darshana Wickramaratne;Hui Cai

  • Resonances in transmission through an oscillating barrier.

    Philip F. Bagwell;Roger K. Lake

Frequent Co-Authors

Gerhard Klimeck
Gerhard Klimeck Purdue University West Lafayette
Alexander A. Balandin
Alexander A. Balandin University of California, Los Angeles
Cengiz S. Ozkan
Cengiz S. Ozkan University of California, Riverside
Kang L. Wang
Kang L. Wang University of California, Los Angeles
Supriyo Datta
Supriyo Datta Purdue University West Lafayette
Mihrimah Ozkan
Mihrimah Ozkan University of California, Riverside
Chun Ning Lau
Chun Ning Lau The Ohio State University
Jing Shi
Jing Shi University of California, Riverside
Alan Seabaugh
Alan Seabaugh University of Notre Dame
Takashi Taniguchi
Takashi Taniguchi National Institute for Materials Science

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