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Tomas Palacios

Tomas Palacios

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Electronics and Electrical Engineering
USA
2026

D-Index & Metrics

Electronics and Electrical Engineering

D-Index
98
Citations
40570
World Ranking
204
National Ranking
97

Materials Science

D-Index
98
Citations
40397
World Ranking
1148
National Ranking
371

Tomas Palacios publication distribution in Electronics and Electrical Engineering in 2026

The chart shows the distribution of publications by all Research.com ranked scientists in the field of Electronics and Electrical Engineering in 2026. The highlighted bar marks where Tomas Palacios sits on this spectrum.

34–53 publications: 24 scientists 54–73 publications: 52 scientists 74–93 publications: 114 scientists 94–113 publications: 203 scientists 114–133 publications: 269 scientists 134–153 publications: 355 scientists 154–173 publications: 403 scientists 174–193 publications: 445 scientists 194–213 publications: 430 scientists 214–233 publications: 431 scientists 234–253 publications: 399 scientists 254–273 publications: 366 scientists 274–293 publications: 335 scientists 294–313 publications: 300 scientists 314–333 publications: 276 scientists 334–353 publications: 250 scientists 354–373 publications: 214 scientists 374–393 publications: 187 scientists 394–413 publications: 152 scientists 414–433 publications: 169 scientists 434–453 publications: 147 scientists 454–473 publications: 111 scientists 474–493 publications: 117 scientists 494–513 publications: 103 scientists 514–533 publications: 99 scientists 534–553 publications: 92 scientists 554–573 publications: 75 scientists 574–593 publications: 58 scientists 594–613 publications: 69 scientists 614–633 publications: 50 scientists 634–653 publications: 62 scientists 654–673 publications: 54 scientists 674–693 publications: 44 scientists 694–713 publications: 37 scientists 714–733 publications: 28 scientists 734–753 publications: 26 scientists 754–773 publications: 26 scientists 774–793 publications: 19 scientists 794–813 publications: 23 scientists 814–833 publications: 20 scientists 834–853 publications: 16 scientists 854–873 publications: 20 scientists 874–893 publications: 11 scientists 894–913 publications: 11 scientists 914–933 publications: 16 scientists 934–953 publications: 13 scientists 954–973 publications: 10 scientists 974–993 publications: 11 scientists 994–1,013 publications: 9 scientists 1,014–1,033 publications: 9 scientists 1,034–1,053 publications: 10 scientists 1,054–1,064 publications: 6 scientists 1,065+ publications: 99 scientists
34 publications 1,065+

This scientist: 451 publications — 80th percentile

80% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 1,065 publications or more.

Tomas Palacios D-index placement in Electronics and Electrical Engineering in 2026

The chart shows the D-index (discipline H-index) distribution of Electronics and Electrical Engineering scientists ranked by Research.com in 2026. The highlighted bar marks where Tomas Palacios sits on this spectrum.

30 D-Index: 178 scientists 31 D-Index: 257 scientists 32 D-Index: 263 scientists 33 D-Index: 262 scientists 34 D-Index: 244 scientists 35 D-Index: 236 scientists 36 D-Index: 211 scientists 37 D-Index: 220 scientists 38 D-Index: 214 scientists 39 D-Index: 214 scientists 40 D-Index: 205 scientists 41 D-Index: 187 scientists 42 D-Index: 194 scientists 43 D-Index: 201 scientists 44 D-Index: 155 scientists 45 D-Index: 189 scientists 46 D-Index: 148 scientists 47 D-Index: 160 scientists 48 D-Index: 134 scientists 49 D-Index: 130 scientists 50 D-Index: 141 scientists 51 D-Index: 156 scientists 52 D-Index: 108 scientists 53 D-Index: 130 scientists 54 D-Index: 112 scientists 55 D-Index: 97 scientists 56 D-Index: 111 scientists 57 D-Index: 102 scientists 58 D-Index: 108 scientists 59 D-Index: 120 scientists 60 D-Index: 103 scientists 61 D-Index: 93 scientists 62 D-Index: 92 scientists 63 D-Index: 74 scientists 64 D-Index: 77 scientists 65 D-Index: 73 scientists 66 D-Index: 64 scientists 67 D-Index: 69 scientists 68 D-Index: 60 scientists 69 D-Index: 39 scientists 70 D-Index: 57 scientists 71 D-Index: 59 scientists 72 D-Index: 46 scientists 73 D-Index: 49 scientists 74 D-Index: 38 scientists 75 D-Index: 35 scientists 76 D-Index: 32 scientists 77 D-Index: 35 scientists 78 D-Index: 31 scientists 79 D-Index: 22 scientists 80 D-Index: 34 scientists 81 D-Index: 31 scientists 82 D-Index: 34 scientists 83 D-Index: 23 scientists 84 D-Index: 18 scientists 85 D-Index: 30 scientists 86 D-Index: 19 scientists 87 D-Index: 19 scientists 88 D-Index: 20 scientists 89 D-Index: 8 scientists 90 D-Index: 17 scientists 91 D-Index: 7 scientists 92 D-Index: 14 scientists 93 D-Index: 9 scientists 94 D-Index: 15 scientists 95 D-Index: 10 scientists 96 D-Index: 12 scientists 97 D-Index: 10 scientists 98 D-Index: 10 scientists 99 D-Index: 12 scientists 100 D-Index: 16 scientists 101 D-Index: 5 scientists 102 D-Index: 7 scientists 103 D-Index: 7 scientists 104 D-Index: 8 scientists 105 D-Index: 9 scientists 106 D-Index: 13 scientists 107 D-Index: 4 scientists 108 D-Index: 5 scientists 109 D-Index: 10 scientists 110 D-Index: 8 scientists 111+ D-Index: 96 scientists
30 D-Index 111+

This scientist: 98 D-Index — 97th percentile

97% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 111 D-Index or more.

Research.com Recognitions

  • 2026 - Research.com Electronics and Electrical Engineering in United States Leader Award
  • 2017 - IEEE Fellow For contributions to gallium nitride electron devices and two-dimensional materials

Overview

Tomas Palacios is affiliated with MIT in the United States and specializes in research areas intersecting engineering, materials science, and physics and astronomy. Their primary subfields include electrical and electronic engineering, materials chemistry, condensed matter physics, biomedical engineering, and electronic, optical and magnetic materials.

The scientist's work extensively covers topics such as:

  • GaN-based semiconductor devices and materials
  • Semiconductor materials and devices
  • 2D materials and applications
  • Silicon carbide semiconductor technologies
  • Graphene research and applications
  • Ga2O3 and related materials
  • Advancements in semiconductor devices and circuit design

Palacios has published frequently in several respected venues, including:

  • IEEE Electron Device Letters
  • IEEE Transactions on Electron Devices
  • Applied Physics Letters
  • arXiv (Cornell University)
  • Nature Electronics

Notable recent papers authored or co-authored by Palacios include:

  • Ultralow contact resistance between semimetal and monolayer semiconductors, 2021, Nature
  • Learning human-environment interactions using conformal tactile textiles, 2021, Nature Electronics
  • Flexible and high-performance electrochromic devices enabled by self-assembled 2D TiO2/MXene heterostructures, 2021, Nature Communications
  • Emerging GaN technologies for power, RF, digital, and quantum computing applications: Recent advances and prospects, 2021, Journal of Applied Physics
  • Chip-less wireless electronic skins by remote epitaxial freestanding compound semiconductors, 2022, Science

Palacios has worked with several frequent co-authors, including:

  • Jing Kong
  • Yuxuan Lin
  • Qingyun Xie
  • Nadim Chowdhury
  • Ang-Yu Lu

Their contribution to the field has also been recognized by prestigious awards such as the IEEE Fellow title granted in 2017 for contributions to gallium nitride electron devices and two-dimensional materials.

Best Publications

  • Electronics based on two-dimensional materials

    Gianluca Fiori;Francesco Bonaccorso;Giuseppe Iannaccone;Tomás Palacios

  • Integrated Circuits Based on Bilayer MoS2 Transistors

    Han Wang;Lili Yu;Yi-Hsien Lee;Yi-Hsien Lee;Yumeng Shi

  • Synthesis of monolayer hexagonal boron nitride on Cu foil using chemical vapor deposition.

    Ki Kang Kim;Allen Hsu;Xiaoting Jia;Soo Min Kim

  • The 2018 GaN power electronics roadmap

    H Amano;Y Baines;Matteo Borga

  • Ultralow contact resistance between semimetal and monolayer semiconductors.

    Pin-Chun Shen;Cong Su;Yuxuan Lin;Yuxuan Lin;Ang-Sheng Chou;Ang-Sheng Chou

  • Carbon-Nanotube-Embedded Hydrogel Sheets for Engineering Cardiac Constructs and Bioactuators

    Su Ryon Shin;Sung Mi Jung;Momen Zalabany;Keekyoung Kim

  • Synthesis and transfer of single-layer transition metal disulfides on diverse surfaces.

    Yi Hsien Lee;Lili Yu;Han Wang;Wenjing Fang

  • Dielectric Screening of Excitons and Trions in Single-Layer MoS2

    Yuxuan Lin;Xi Ling;Lili Yu;Shengxi Huang

  • Graphene/MoS2 Hybrid Technology for Large-Scale Two-Dimensional Electronics

    Lili Yu;Yi Hsien Lee;Xi Ling;Elton J G Santos

  • Synthesis and Characterization of Hexagonal Boron Nitride Film as a Dielectric Layer for Graphene Devices

    Ki Kang Kim;Allen Hsu;Xiaoting Jia;Soo Min Kim

  • High-power AlGaN/GaN HEMTs for Ka-band applications

    T. Palacios;A. Chakraborty;S. Rajan;C. Poblenz

  • Synthesis of large-area multilayer hexagonal boron nitride for high material performance

    Soo Min Kim;Allen Hsu;Min Ho Park;Sang Hoon Chae

  • Transport Properties of a MoS2/WSe2 Heterojunction Transistor and Its Potential for Application

    Amirhasan Nourbakhsh;Ahmad Zubair;Mildred S. Dresselhaus;Tomás Palacios

  • MoS2 Field-Effect Transistor with Sub-10 nm Channel Length

    Amirhasan Nourbakhsh;Ahmad Zubair;Redwan N. Sajjad;K G Amir Tavakkoli

  • AlGaN/GaN high electron mobility transistors with InGaN back-barriers

    T. Palacios;A. Chakraborty;S. Heikman;S. Keller

  • AlGaN/GaN HEMT With 300-GHz $f_{\max}$

    J.W. Chung;W.E. Hoke;E.M. Chumbes;T. Palacios

  • Role of interfacial oxide in high-efficiency graphene-silicon Schottky barrier solar cells.

    Yi Song;Xinming Li;Charles Mackin;Xu Zhang

  • Graphene Frequency Multipliers

    Han Wang;Daniel Nezich;Jing Kong;Tomas Palacios

  • Direct optical detection of Weyl fermion chirality in a topological semimetal

    Qiong Ma;Su Yang Xu;Ching Kit Chan;Ching Kit Chan;Cheng Long Zhang

  • Large-Area Synthesis of High-Quality Uniform Few-Layer MoTe2

    Lin Zhou;Kai Xu;Ahmad Zubair;Albert D. Liao

Frequent Co-Authors

Yuhao Zhang
Yuhao Zhang Virginia Tech
Han Wang
Han Wang University of Southern California
Umesh K. Mishra
Umesh K. Mishra University of California, Santa Barbara
Xi Ling
Xi Ling Boston University
Ki Kang Kim
Ki Kang Kim Sungkyunkwan University
Arpan Chakraborty
Arpan Chakraborty Apple (United States)
Fernando Calle
Fernando Calle Technical University of Madrid

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