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Tomas Palacios

Tomas Palacios

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Electronics and Electrical Engineering
USA
2026

D-Index & Metrics

Electronics and Electrical Engineering

D-Index
98
Citations
40570
World Ranking
204
National Ranking
97

Materials Science

D-Index
98
Citations
40397
World Ranking
1148
National Ranking
372

Research.com Recognitions

  • 2026 - Research.com Electronics and Electrical Engineering in United States Leader Award
  • 2017 - IEEE Fellow For contributions to gallium nitride electron devices and two-dimensional materials

Overview

Tomas Palacios is affiliated with MIT in the United States and specializes in research areas intersecting engineering, materials science, and physics and astronomy. Their primary subfields include electrical and electronic engineering, materials chemistry, condensed matter physics, biomedical engineering, and electronic, optical and magnetic materials.

The scientist's work extensively covers topics such as:

  • GaN-based semiconductor devices and materials
  • Semiconductor materials and devices
  • 2D materials and applications
  • Silicon carbide semiconductor technologies
  • Graphene research and applications
  • Ga2O3 and related materials
  • Advancements in semiconductor devices and circuit design

Palacios has published frequently in several respected venues, including:

  • IEEE Electron Device Letters
  • IEEE Transactions on Electron Devices
  • Applied Physics Letters
  • arXiv (Cornell University)
  • Nature Electronics

Notable recent papers authored or co-authored by Palacios include:

  • Ultralow contact resistance between semimetal and monolayer semiconductors, 2021, Nature
  • Learning human-environment interactions using conformal tactile textiles, 2021, Nature Electronics
  • Flexible and high-performance electrochromic devices enabled by self-assembled 2D TiO2/MXene heterostructures, 2021, Nature Communications
  • Emerging GaN technologies for power, RF, digital, and quantum computing applications: Recent advances and prospects, 2021, Journal of Applied Physics
  • Chip-less wireless electronic skins by remote epitaxial freestanding compound semiconductors, 2022, Science

Palacios has worked with several frequent co-authors, including:

  • Jing Kong
  • Yuxuan Lin
  • Qingyun Xie
  • Nadim Chowdhury
  • Ang-Yu Lu

Their contribution to the field has also been recognized by prestigious awards such as the IEEE Fellow title granted in 2017 for contributions to gallium nitride electron devices and two-dimensional materials.

Best Publications

  • Electronics based on two-dimensional materials

    Gianluca Fiori;Francesco Bonaccorso;Giuseppe Iannaccone;Tomás Palacios

  • Integrated Circuits Based on Bilayer MoS2 Transistors

    Han Wang;Lili Yu;Yi-Hsien Lee;Yi-Hsien Lee;Yumeng Shi

  • Synthesis of monolayer hexagonal boron nitride on Cu foil using chemical vapor deposition.

    Ki Kang Kim;Allen Hsu;Xiaoting Jia;Soo Min Kim

  • The 2018 GaN power electronics roadmap

    H Amano;Y Baines;Matteo Borga

  • Ultralow contact resistance between semimetal and monolayer semiconductors.

    Pin-Chun Shen;Cong Su;Yuxuan Lin;Yuxuan Lin;Ang-Sheng Chou;Ang-Sheng Chou

  • Carbon-Nanotube-Embedded Hydrogel Sheets for Engineering Cardiac Constructs and Bioactuators

    Su Ryon Shin;Sung Mi Jung;Momen Zalabany;Keekyoung Kim

  • Synthesis and transfer of single-layer transition metal disulfides on diverse surfaces.

    Yi Hsien Lee;Lili Yu;Han Wang;Wenjing Fang

  • Dielectric Screening of Excitons and Trions in Single-Layer MoS2

    Yuxuan Lin;Xi Ling;Lili Yu;Shengxi Huang

  • Graphene/MoS2 Hybrid Technology for Large-Scale Two-Dimensional Electronics

    Lili Yu;Yi Hsien Lee;Xi Ling;Elton J G Santos

  • Synthesis and Characterization of Hexagonal Boron Nitride Film as a Dielectric Layer for Graphene Devices

    Ki Kang Kim;Allen Hsu;Xiaoting Jia;Soo Min Kim

  • High-power AlGaN/GaN HEMTs for Ka-band applications

    T. Palacios;A. Chakraborty;S. Rajan;C. Poblenz

  • Synthesis of large-area multilayer hexagonal boron nitride for high material performance

    Soo Min Kim;Allen Hsu;Min Ho Park;Sang Hoon Chae

  • Transport Properties of a MoS2/WSe2 Heterojunction Transistor and Its Potential for Application

    Amirhasan Nourbakhsh;Ahmad Zubair;Mildred S. Dresselhaus;Tomás Palacios

  • MoS2 Field-Effect Transistor with Sub-10 nm Channel Length

    Amirhasan Nourbakhsh;Ahmad Zubair;Redwan N. Sajjad;K G Amir Tavakkoli

  • AlGaN/GaN high electron mobility transistors with InGaN back-barriers

    T. Palacios;A. Chakraborty;S. Heikman;S. Keller

  • AlGaN/GaN HEMT With 300-GHz $f_{\max}$

    J.W. Chung;W.E. Hoke;E.M. Chumbes;T. Palacios

  • Role of interfacial oxide in high-efficiency graphene-silicon Schottky barrier solar cells.

    Yi Song;Xinming Li;Charles Mackin;Xu Zhang

  • Graphene Frequency Multipliers

    Han Wang;Daniel Nezich;Jing Kong;Tomas Palacios

  • Direct optical detection of Weyl fermion chirality in a topological semimetal

    Qiong Ma;Su Yang Xu;Ching Kit Chan;Ching Kit Chan;Cheng Long Zhang

  • Large-Area Synthesis of High-Quality Uniform Few-Layer MoTe2

    Lin Zhou;Kai Xu;Ahmad Zubair;Albert D. Liao

Frequent Co-Authors

Yuhao Zhang
Yuhao Zhang Virginia Tech
Han Wang
Han Wang University of Southern California
Umesh K. Mishra
Umesh K. Mishra University of California, Santa Barbara
Xi Ling
Xi Ling Boston University
Ki Kang Kim
Ki Kang Kim Sungkyunkwan University
Arpan Chakraborty
Arpan Chakraborty Apple (United States)
Fernando Calle
Fernando Calle Technical University of Madrid

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