H-Index & Metrics Best Publications
Tomas Palacios

Tomas Palacios

H-Index & Metrics

Discipline name H-index Citations Publications World Ranking National Ranking
Electronics and Electrical Engineering D-index 73 Citations 19,737 301 World Ranking 228 National Ranking 128
Materials Science D-index 78 Citations 24,664 345 World Ranking 1175 National Ranking 415

Research.com Recognitions

Awards & Achievements

2017 - IEEE Fellow For contributions to gallium nitride electron devices and two-dimensional materials

Overview

What is he best known for?

The fields of study he is best known for:

  • Quantum mechanics
  • Semiconductor
  • Electron

Tomas Palacios mainly investigates Optoelectronics, Transistor, Nanotechnology, Gallium nitride and Graphene. His Optoelectronics research incorporates themes from Breakdown voltage, Substrate and High-electron-mobility transistor. His study in Transistor is interdisciplinary in nature, drawing from both Cutoff frequency and Heterojunction.

His Nanotechnology research includes elements of Quantum tunnelling, Integrated circuit, Coupling and Electronics. Tomas Palacios combines subjects such as Photonics, Threshold voltage, Subthreshold slope, Electric field and Leakage with his study of Gallium nitride. His Graphene research is multidisciplinary, relying on both Electron mobility, Radio frequency and Chemical vapor deposition.

His most cited work include:

  • Electronics based on two-dimensional materials (1566 citations)
  • Integrated Circuits Based on Bilayer MoS2 Transistors (1222 citations)
  • Synthesis of monolayer hexagonal boron nitride on Cu foil using chemical vapor deposition. (773 citations)

What are the main themes of his work throughout his whole career to date?

Optoelectronics, Transistor, Gallium nitride, Graphene and Wide-bandgap semiconductor are his primary areas of study. His Optoelectronics study combines topics in areas such as Breakdown voltage, High-electron-mobility transistor, Field-effect transistor and Electronic engineering, Logic gate. His Transistor study incorporates themes from Cutoff frequency and Heterojunction.

In his study, Power electronics is strongly linked to Power semiconductor device, which falls under the umbrella field of Gallium nitride. As part of the same scientific family, he usually focuses on Graphene, concentrating on Chemical vapor deposition and intersecting with Chemical engineering. As a part of the same scientific family, he mostly works in the field of Nanotechnology, focusing on Electronics and, on occasion, Electronic circuit.

He most often published in these fields:

  • Optoelectronics (66.67%)
  • Transistor (41.24%)
  • Gallium nitride (23.93%)

What were the highlights of his more recent work (between 2018-2021)?

  • Optoelectronics (66.67%)
  • Transistor (41.24%)
  • Graphene (19.87%)

In recent papers he was focusing on the following fields of study:

Tomas Palacios mainly focuses on Optoelectronics, Transistor, Graphene, Gallium nitride and Semiconductor. His research in Optoelectronics is mostly concerned with Doping. His Transistor study necessitates a more in-depth grasp of Electrical engineering.

The concepts of his Graphene study are interwoven with issues in Photovoltaics, Scattering, Silicon, Thin film and Raman spectroscopy. His Gallium nitride research incorporates elements of Power, Capacitance, Logic gate and Omega. He has included themes like Organic solar cell, Chemical sensor and Electronics in his Nanotechnology study.

Between 2018 and 2021, his most popular works were:

  • Two-dimensional MoS 2 -enabled flexible rectenna for Wi-Fi-band wireless energy harvesting (84 citations)
  • Paraffin-enabled graphene transfer. (64 citations)
  • Giant intrinsic photoresponse in pristine graphene (32 citations)

In his most recent research, the most cited papers focused on:

  • Quantum mechanics
  • Semiconductor
  • Electron

His main research concerns Optoelectronics, Transistor, Gallium nitride, Logic gate and Graphene. His research integrates issues of Sheet resistance, Perovskite and Voltage in his study of Optoelectronics. In general Transistor study, his work on Field-effect transistor often relates to the realm of Block, thereby connecting several areas of interest.

His study looks at the intersection of Field-effect transistor and topics like Lithography with Monolayer and Nanotechnology. His work deals with themes such as Power, Power semiconductor device, Omega, Capacitance and Threshold voltage, which intersect with Gallium nitride. His Logic gate study combines topics from a wide range of disciplines, such as Wafer and Transconductance.

This overview was generated by a machine learning system which analysed the scientist’s body of work. If you have any feedback, you can contact us here.

Best Publications

Electronics based on two-dimensional materials

Gianluca Fiori;Francesco Bonaccorso;Giuseppe Iannaccone;Tomás Palacios.
Nature Nanotechnology (2014)

1877 Citations

Integrated Circuits Based on Bilayer MoS2 Transistors

Han Wang;Lili Yu;Yi-Hsien Lee;Yi-Hsien Lee;Yumeng Shi.
Nano Letters (2012)

1511 Citations

Synthesis of monolayer hexagonal boron nitride on Cu foil using chemical vapor deposition.

Ki Kang Kim;Allen Hsu;Xiaoting Jia;Soo Min Kim.
Nano Letters (2012)

928 Citations

Synthesis and transfer of single-layer transition metal disulfides on diverse surfaces.

Yi Hsien Lee;Lili Yu;Han Wang;Wenjing Fang.
Nano Letters (2013)

587 Citations

Carbon-Nanotube-Embedded Hydrogel Sheets for Engineering Cardiac Constructs and Bioactuators

Su Ryon Shin;Sung Mi Jung;Momen Zalabany;Keekyoung Kim.
ACS Nano (2013)

537 Citations

Graphene/MoS2 Hybrid Technology for Large-Scale Two-Dimensional Electronics

Lili Yu;Yi Hsien Lee;Xi Ling;Elton J G Santos.
Nano Letters (2014)

475 Citations

High-power AlGaN/GaN HEMTs for Ka-band applications

T. Palacios;A. Chakraborty;S. Rajan;C. Poblenz.
IEEE Electron Device Letters (2005)

455 Citations

Synthesis and Characterization of Hexagonal Boron Nitride Film as a Dielectric Layer for Graphene Devices

Ki Kang Kim;Allen Hsu;Xiaoting Jia;Soo Min Kim.
ACS Nano (2012)

418 Citations

AlGaN/GaN high electron mobility transistors with InGaN back-barriers

T. Palacios;A. Chakraborty;S. Heikman;S. Keller.
IEEE Electron Device Letters (2006)

416 Citations

Dielectric Screening of Excitons and Trions in Single-Layer MoS2

Yuxuan Lin;Xi Ling;Lili Yu;Shengxi Huang.
Nano Letters (2014)

406 Citations

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Hong Kong University of Science and Technology

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Stacia Keller

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