World's Best Scientists 2026 revealed!

D-Index & Metrics

Electronics and Electrical Engineering

D-Index
59
Citations
26265
World Ranking
1691
National Ranking
679

Materials Science

D-Index
60
Citations
26439
World Ranking
6909
National Ranking
1735

Han Wang publication distribution in Electronics and Electrical Engineering in 2026

The chart shows the distribution of publications by all Research.com ranked scientists in the field of Electronics and Electrical Engineering in 2026. The highlighted bar marks where Han Wang sits on this spectrum.

34–53 publications: 24 scientists 54–73 publications: 52 scientists 74–93 publications: 114 scientists 94–113 publications: 203 scientists 114–133 publications: 269 scientists 134–153 publications: 355 scientists 154–173 publications: 403 scientists 174–193 publications: 445 scientists 194–213 publications: 430 scientists 214–233 publications: 431 scientists 234–253 publications: 399 scientists 254–273 publications: 366 scientists 274–293 publications: 335 scientists 294–313 publications: 300 scientists 314–333 publications: 276 scientists 334–353 publications: 250 scientists 354–373 publications: 214 scientists 374–393 publications: 187 scientists 394–413 publications: 152 scientists 414–433 publications: 169 scientists 434–453 publications: 147 scientists 454–473 publications: 111 scientists 474–493 publications: 117 scientists 494–513 publications: 103 scientists 514–533 publications: 99 scientists 534–553 publications: 92 scientists 554–573 publications: 75 scientists 574–593 publications: 58 scientists 594–613 publications: 69 scientists 614–633 publications: 50 scientists 634–653 publications: 62 scientists 654–673 publications: 54 scientists 674–693 publications: 44 scientists 694–713 publications: 37 scientists 714–733 publications: 28 scientists 734–753 publications: 26 scientists 754–773 publications: 26 scientists 774–793 publications: 19 scientists 794–813 publications: 23 scientists 814–833 publications: 20 scientists 834–853 publications: 16 scientists 854–873 publications: 20 scientists 874–893 publications: 11 scientists 894–913 publications: 11 scientists 914–933 publications: 16 scientists 934–953 publications: 13 scientists 954–973 publications: 10 scientists 974–993 publications: 11 scientists 994–1,013 publications: 9 scientists 1,014–1,033 publications: 9 scientists 1,034–1,053 publications: 10 scientists 1,054–1,064 publications: 6 scientists 1,065+ publications: 99 scientists
34 publications 1,065+

This scientist: 128 publications — 9th percentile

9% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 1,065 publications or more.

Han Wang D-index placement in Electronics and Electrical Engineering in 2026

The chart shows the D-index (discipline H-index) distribution of Electronics and Electrical Engineering scientists ranked by Research.com in 2026. The highlighted bar marks where Han Wang sits on this spectrum.

30 D-Index: 178 scientists 31 D-Index: 257 scientists 32 D-Index: 263 scientists 33 D-Index: 262 scientists 34 D-Index: 244 scientists 35 D-Index: 236 scientists 36 D-Index: 211 scientists 37 D-Index: 220 scientists 38 D-Index: 214 scientists 39 D-Index: 214 scientists 40 D-Index: 205 scientists 41 D-Index: 187 scientists 42 D-Index: 194 scientists 43 D-Index: 201 scientists 44 D-Index: 155 scientists 45 D-Index: 189 scientists 46 D-Index: 148 scientists 47 D-Index: 160 scientists 48 D-Index: 134 scientists 49 D-Index: 130 scientists 50 D-Index: 141 scientists 51 D-Index: 156 scientists 52 D-Index: 108 scientists 53 D-Index: 130 scientists 54 D-Index: 112 scientists 55 D-Index: 97 scientists 56 D-Index: 111 scientists 57 D-Index: 102 scientists 58 D-Index: 108 scientists 59 D-Index: 120 scientists 60 D-Index: 103 scientists 61 D-Index: 93 scientists 62 D-Index: 92 scientists 63 D-Index: 74 scientists 64 D-Index: 77 scientists 65 D-Index: 73 scientists 66 D-Index: 64 scientists 67 D-Index: 69 scientists 68 D-Index: 60 scientists 69 D-Index: 39 scientists 70 D-Index: 57 scientists 71 D-Index: 59 scientists 72 D-Index: 46 scientists 73 D-Index: 49 scientists 74 D-Index: 38 scientists 75 D-Index: 35 scientists 76 D-Index: 32 scientists 77 D-Index: 35 scientists 78 D-Index: 31 scientists 79 D-Index: 22 scientists 80 D-Index: 34 scientists 81 D-Index: 31 scientists 82 D-Index: 34 scientists 83 D-Index: 23 scientists 84 D-Index: 18 scientists 85 D-Index: 30 scientists 86 D-Index: 19 scientists 87 D-Index: 19 scientists 88 D-Index: 20 scientists 89 D-Index: 8 scientists 90 D-Index: 17 scientists 91 D-Index: 7 scientists 92 D-Index: 14 scientists 93 D-Index: 9 scientists 94 D-Index: 15 scientists 95 D-Index: 10 scientists 96 D-Index: 12 scientists 97 D-Index: 10 scientists 98 D-Index: 10 scientists 99 D-Index: 12 scientists 100 D-Index: 16 scientists 101 D-Index: 5 scientists 102 D-Index: 7 scientists 103 D-Index: 7 scientists 104 D-Index: 8 scientists 105 D-Index: 9 scientists 106 D-Index: 13 scientists 107 D-Index: 4 scientists 108 D-Index: 5 scientists 109 D-Index: 10 scientists 110 D-Index: 8 scientists 111+ D-Index: 96 scientists
30 D-Index 111+

This scientist: 59 D-Index — 75th percentile

75% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 111 D-Index or more.

Overview

Han Wang is affiliated with the University of Southern California in the United States. Their research primarily focuses on materials science and engineering, with a strong emphasis on materials chemistry, electronic, optical and magnetic materials, electrical and electronic engineering, atomic and molecular physics, and geophysics.

The scientist's publication record spans various topics within these fields, including:

  • Multiferroics and related materials
  • ZnO doping and properties
  • Ferroelectric and piezoelectric materials
  • Magnetic and transport properties of perovskites and related materials
  • Geological and geochemical analysis
  • Electrocatalysts for energy conversion
  • Advancements in solid oxide fuel cells

Han Wang's recent impactful papers illustrate a broad engagement with energy materials and interfaces. Selected works include:

  • "Interface synergism and engineering of Pd/Co@N-C for direct ethanol fuel cells," 2023, published in Nature Communications
  • "Porous FeCo Glassy Alloy as Bifunctional Support for High-Performance Zn-Air Battery," 2020, published in Advanced Energy Materials
  • "Exchange Bias in a La0.67Sr0.33MnO3/NiO Heterointerface Integrated on a Flexible Mica Substrate," 2020, published in ACS Applied Materials & Interfaces
  • "Understanding the Electronic Structure Evolution of Epitaxial LaNi1-xFexO3 Thin Films for Water Oxidation," 2021, published in Nano Letters
  • "Role of ALD Al2O3 Surface Passivation on the Performance of p-Type Cu2O Thin Film Transistors," 2021, published in ACS Applied Materials & Interfaces

The scientist frequently publishes in notable journals, including:

  • SSRN Electronic Journal
  • arXiv (Cornell University)
  • ACS Applied Materials & Interfaces
  • Physical Chemistry Chemical Physics
  • Nature Communications

Han Wang collaborates regularly with a range of co-authors, among the most frequent are:

  • Haiyan Wang
  • Xin Li Phuah
  • Yayi Wang
  • Bruce Zhang
  • X. Zhang

The scientist's work integrates advanced materials synthesis, interface engineering, and analysis of electronic and magnetic properties, situating their contributions at the crossroads of experimental and applied materials research. This profile reflects a steady publication record across key subfields of materials science and engineering, illustrating active engagement with contemporary challenges in energy materials and device interfaces.

Best Publications

  • Rediscovering black phosphorus as an anisotropic layered material for optoelectronics and electronics

    Fengnian Xia;Han Wang;Yichen Jia

  • Two-dimensional material nanophotonics

    Fengnian Xia;Han Wang;Di Xiao;Madan Dubey

  • Integrated Circuits Based on Bilayer MoS2 Transistors

    Han Wang;Lili Yu;Yi-Hsien Lee;Yi-Hsien Lee;Yumeng Shi

  • The renaissance of black phosphorus

    Xi Ling;Han Wang;Shengxi Huang;Fengnian Xia

  • Highly anisotropic and robust excitons in monolayer black phosphorus.

    Xiaomu Wang;Aaron M. Jones;Kyle L. Seyler;Vy Tran

  • Black Phosphorus Mid-Infrared Photodetectors with High Gain

    Qiushi Guo;Andreas Pospischil;Maruf Bhuiyan;Hao Jiang

  • Tunable optical properties of multilayer black phosphorus thin films

    Tony Low;Tony Low;Tony Low;A. S. Rodin;A. Carvalho;Yongjin Jiang

  • Synthesis and transfer of single-layer transition metal disulfides on diverse surfaces.

    Yi Hsien Lee;Lili Yu;Han Wang;Wenjing Fang

  • Graphene/MoS2 Hybrid Technology for Large-Scale Two-Dimensional Electronics

    Lili Yu;Yi Hsien Lee;Xi Ling;Elton J G Santos

  • Plasmons and Screening in Monolayer and Multilayer Black Phosphorus

    Tony Low;Rafael Roldán;Han Wang;Fengnian Xia

  • Electronic transport and device prospects of monolayer molybdenum disulphide grown by chemical vapour deposition

    Wenjuan Zhu;Tony Low;Yi Hsien Lee;Han Wang

  • Black Arsenic–Phosphorus: Layered Anisotropic Infrared Semiconductors with Highly Tunable Compositions and Properties

    Bilu Liu;Marianne Köpf;Ahmad N. Abbas;Xiaomu Wang

  • Graphene Frequency Multipliers

    Han Wang;Daniel Nezich;Jing Kong;Tomas Palacios

  • A wireless LAN-based indoor positioning technology

    Z. Xiang;S. Song;J. Chen;H. Wang

  • Two-dimensional MoS2-enabled flexible rectenna for Wi-Fi-band wireless energy harvesting.

    Xu Zhang;Jesús Grajal;Jose Luis Vazquez-Roy;Ujwal Radhakrishna

  • Black Phosphorus Radio-Frequency Transistors

    Han Wang;Xiaomu Wang;Fengnian Xia;Luhao Wang

  • Anisotropic Black Phosphorus Synaptic Device for Neuromorphic Applications.

    He Tian;Qiushi Guo;Yujun Xie;Huan Zhao

  • Efficient electrical control of thin-film black phosphorus bandgap.

    Bingchen Deng;Vy Tran;Yujun Xie;Hao Jiang

  • Recent Progress on Stability and Passivation of Black Phosphorus.

    Yohannes Abate;Deji Akinwande;Sampath Gamage;Han Wang

  • Graphene-Based Ambipolar RF Mixers

    Han Wang;Allen Hsu;Justin Wu;Jing Kong

Frequent Co-Authors

Fengnian Xia
Fengnian Xia Yale University
He Tian
He Tian East China University of Science and Technology
Madan Dubey
Madan Dubey United States Army Research Laboratory
Xiaomu Wang
Xiaomu Wang Nanjing University
Richard V. Penty
Richard V. Penty University of Cambridge
Ian H. White
Ian H. White University of Bath
Ki Kang Kim
Ki Kang Kim Sungkyunkwan University
Yuhao Zhang
Yuhao Zhang Virginia Tech

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