D-Index & Metrics Best Publications

D-Index & Metrics D-index (Discipline H-index) only includes papers and citation values for an examined discipline in contrast to General H-index which accounts for publications across all disciplines.

Discipline name D-index D-index (Discipline H-index) only includes papers and citation values for an examined discipline in contrast to General H-index which accounts for publications across all disciplines. Citations Publications World Ranking National Ranking
Electronics and Electrical Engineering D-index 36 Citations 6,827 184 World Ranking 3474 National Ranking 51

Overview

What is he best known for?

The fields of study he is best known for:

  • Semiconductor
  • Photon
  • Optics

His primary scientific interests are in Optoelectronics, Photoluminescence, Wide-bandgap semiconductor, Photodiode and Photodetector. His research integrates issues of Sapphire, Transistor, Optics and Epitaxy in his study of Optoelectronics. His Photoluminescence research incorporates themes from Molecular beam epitaxy and Atomic physics.

His work carried out in the field of Wide-bandgap semiconductor brings together such families of science as Absorption and Band gap. His Photodiode research includes elements of Schottky diode, Photoresistor and Photodetection. His work in Photodetector tackles topics such as Ultraviolet which are related to areas like Silicon carbide, Inorganic chemistry and Semiconductor.

His most cited work include:

  • Wide-bandgap semiconductor ultraviolet photodetectors (913 citations)
  • Luminescence properties and defects in GaN nanocolumns grown by molecular beam epitaxy (325 citations)
  • The effect of the III/V ratio and substrate temperature on the morphology and properties of GaN- and AlN-layers grown by molecular beam epitaxy on Si(1 1 1) (269 citations)

What are the main themes of his work throughout his whole career to date?

His primary areas of investigation include Optoelectronics, Optics, Analytical chemistry, Photoluminescence and Wide-bandgap semiconductor. His Optoelectronics study integrates concerns from other disciplines, such as Transistor and Epitaxy. His study on Analytical chemistry also encompasses disciplines like

  • Passivation most often made with reference to Gallium nitride,
  • Electron mobility which connect with Graphene.

His Photoluminescence study combines topics from a wide range of disciplines, such as Full width at half maximum, Luminescence, Molecular beam epitaxy, Exciton and Molecular physics. As a part of the same scientific family, Fernando Calle mostly works in the field of Photodetector, focusing on Ultraviolet and, on occasion, Photoconductivity. He combines subjects such as Band gap and Semiconductor with his study of Photodiode.

He most often published in these fields:

  • Optoelectronics (53.53%)
  • Optics (16.60%)
  • Analytical chemistry (16.18%)

What were the highlights of his more recent work (between 2013-2021)?

  • Optoelectronics (53.53%)
  • Graphene (6.22%)
  • Nanotechnology (4.98%)

In recent papers he was focusing on the following fields of study:

His primary areas of investigation include Optoelectronics, Graphene, Nanotechnology, Transistor and Capacitance. His work on Heterojunction as part of general Optoelectronics study is frequently linked to Trapping, bridging the gap between disciplines. His Graphene study combines topics in areas such as Electron mobility, Transconductance, Phonon, Photovoltaic system and Electrical conductor.

His Transistor research is multidisciplinary, incorporating elements of Characterization, Wide-bandgap semiconductor, Silicon nitride and Logic gate. His biological study spans a wide range of topics, including Stress and Passivation. His studies in Capacitance integrate themes in fields like Buck converter, Electronic engineering, High-electron-mobility transistor and Scanning electron microscope.

Between 2013 and 2021, his most popular works were:

  • Neutrino physics with the PTOLEMY project: Active neutrino properties and the light sterile case (52 citations)
  • Polyaniline nanofiber sponge filled graphene foam as high gravimetric and volumetric capacitance electrode (34 citations)
  • Automatic graphene transfer system for improved material quality and efficiency (25 citations)

In his most recent research, the most cited papers focused on:

  • Semiconductor
  • Photon
  • Electrical engineering

His primary scientific interests are in Optoelectronics, Nanotechnology, Supercapacitor, Particle physics and Cosmic neutrino background. Fernando Calle conducts interdisciplinary study in the fields of Optoelectronics and Thermal management of electronic devices and systems through his works. In general Nanotechnology study, his work on Graphene foam often relates to the realm of Oxide, thereby connecting several areas of interest.

His Supercapacitor research incorporates elements of Equivalent series resistance, Hexamethylenetetramine, Scanning electron microscope and Analytical chemistry. The concepts of his Particle physics study are interwoven with issues in Universe and Detector. Fernando Calle has included themes like Schottky diode, Diode, Orders of magnitude and Wide-bandgap semiconductor in his Transistor study.

This overview was generated by a machine learning system which analysed the scientist’s body of work. If you have any feedback, you can contact us here.

Best Publications

Wide-bandgap semiconductor ultraviolet photodetectors

E Monroy;F Omnès;F Calle.
Semiconductor Science and Technology (2003)

1345 Citations

Wide-bandgap semiconductor ultraviolet photodetectors

E Monroy;F Omnès;F Calle.
Semiconductor Science and Technology (2003)

1345 Citations

Luminescence properties and defects in GaN nanocolumns grown by molecular beam epitaxy

E. Calleja;M. A. Sánchez-García;F. J. Sánchez;F. Calle.
Physical Review B (2000)

455 Citations

Luminescence properties and defects in GaN nanocolumns grown by molecular beam epitaxy

E. Calleja;M. A. Sánchez-García;F. J. Sánchez;F. Calle.
Physical Review B (2000)

455 Citations

The effect of the III/V ratio and substrate temperature on the morphology and properties of GaN- and AlN-layers grown by molecular beam epitaxy on Si(1 1 1)

M.A. Sanchez-Garcia;E. Calleja;E. Monroy;F.J. Sanchez.
Journal of Crystal Growth (1998)

383 Citations

III nitrides and UV detection

E Muñoz;E Monroy;J L Pau;F Calle.
Journal of Physics: Condensed Matter (2001)

343 Citations

III nitrides and UV detection

E Muñoz;E Monroy;J L Pau;F Calle.
Journal of Physics: Condensed Matter (2001)

343 Citations

High-performance GaN p-n junction photodetectors for solar ultraviolet applications

E Monroy;E Muñoz;F J Sánchez;F Calle.
Semiconductor Science and Technology (1998)

277 Citations

High-performance GaN p-n junction photodetectors for solar ultraviolet applications

E Monroy;E Muñoz;F J Sánchez;F Calle.
Semiconductor Science and Technology (1998)

277 Citations

Growth of III-nitrides on Si(1 1 1) by molecular beam epitaxy: Doping, optical, and electrical properties

E Calleja;M.A Sánchez-Garcı́a;F.J Sánchez;F Calle.
Journal of Crystal Growth (1999)

245 Citations

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