2016 - IEEE Fellow For contributions to III-V light emitter technology
His scientific interests lie mostly in Optoelectronics, Molecular beam epitaxy, Optics, Wavelength and Photoluminescence. As part of his studies on Optoelectronics, Katsumi Kishino frequently links adjacent subjects like Quantum well. His biological study spans a wide range of topics, including Silicon and Dislocation.
His Optics research is multidisciplinary, incorporating elements of Gallium nitride and Nanostructure. His Wavelength research incorporates themes from Thin film, Absorption, Stimulated emission, Laser and Active layer. His Photoluminescence research integrates issues from Sapphire and Binding energy, Atomic physics.
His primary scientific interests are in Optoelectronics, Molecular beam epitaxy, Optics, Photoluminescence and Wavelength. He has researched Optoelectronics in several fields, including Quantum well, Laser and Epitaxy. His Quantum well study deals with Condensed matter physics intersecting with Ultrashort pulse.
His research in Molecular beam epitaxy tackles topics such as Diode which are related to areas like Current density. His work deals with themes such as Spectral line, Wide-bandgap semiconductor and Band gap, which intersect with Photoluminescence. The Light-emitting diode study combines topics in areas such as Gallium nitride and Electroluminescence.
Optoelectronics, Photoluminescence, Molecular beam epitaxy, Light-emitting diode and Nanostructure are his primary areas of study. Optoelectronics and Optics are commonly linked in his work. His studies in Photoluminescence integrate themes in fields like Quantum well, Spectral line, Excitation and Laser linewidth.
The study incorporates disciplines such as Luminescence, Transmission electron microscopy, Substrate and Graphene in addition to Molecular beam epitaxy. His Light-emitting diode research includes themes of Wide-bandgap semiconductor and Gallium nitride. Katsumi Kishino works mostly in the field of Diode, limiting it down to topics relating to Electrode and, in certain cases, Layer.
Katsumi Kishino spends much of his time researching Optoelectronics, Molecular beam epitaxy, Photoluminescence, Light-emitting diode and Optics. His research integrates issues of Gallium nitride and Substrate in his study of Optoelectronics. His Molecular beam epitaxy research includes elements of Luminescence, Transmission electron microscopy and Doping.
His Photoluminescence study combines topics in areas such as Nanostructure, Beam, Quantum well, Dielectric and Band gap. His work on Whispering-gallery wave, Photonic crystal and Lasing threshold as part of his general Optics study is frequently connected to Antenna, thereby bridging the divide between different branches of science. His Diode study incorporates themes from Silicon and Electrode.
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InGaN/GaN Multiple Quantum Disk Nanocolumn Light-Emitting Diodes Grown on (111) Si Substrate
Akihiko Kikuchi;Mizue Kawai;Makoto Tada;Katsumi Kishino.
Japanese Journal of Applied Physics (2004)
InGaN/GaN Multiple Quantum Disk Nanocolumn Light-Emitting Diodes Grown on (111) Si Substrate
Akihiko Kikuchi;Mizue Kawai;Makoto Tada;Katsumi Kishino.
Japanese Journal of Applied Physics (2004)
Growth of Self-Organized GaN Nanostructures on Al2O3(0001) by RF-Radical Source Molecular Beam Epitaxy
Masaki Yoshizawa;Akihiko Kikuchi;Masashi Mori;Nobuhiko Fujita.
Japanese Journal of Applied Physics (1997)
Growth of Self-Organized GaN Nanostructures on Al2O3(0001) by RF-Radical Source Molecular Beam Epitaxy
Masaki Yoshizawa;Akihiko Kikuchi;Masashi Mori;Nobuhiko Fujita.
Japanese Journal of Applied Physics (1997)
Emission color control from blue to red with nanocolumn diameter of InGaN/GaN nanocolumn arrays grown on same substrate
Hiroto Sekiguchi;Katsumi Kishino;Akihiko Kikuchi.
Applied Physics Letters (2010)
Emission color control from blue to red with nanocolumn diameter of InGaN/GaN nanocolumn arrays grown on same substrate
Hiroto Sekiguchi;Katsumi Kishino;Akihiko Kikuchi.
Applied Physics Letters (2010)
Improved Ti-mask selective-area growth (SAG) by rf-plasma-assisted molecular beam epitaxy demonstrating extremely uniform GaN nanocolumn arrays
Katsumi Kishino;Hiroto Sekiguchi;Akihiko Kikuchi.
Journal of Crystal Growth (2009)
Improved Ti-mask selective-area growth (SAG) by rf-plasma-assisted molecular beam epitaxy demonstrating extremely uniform GaN nanocolumn arrays
Katsumi Kishino;Hiroto Sekiguchi;Akihiko Kikuchi.
Journal of Crystal Growth (2009)
Ti-mask Selective-Area Growth of GaN by RF-Plasma-Assisted Molecular-Beam Epitaxy for Fabricating Regularly Arranged InGaN/GaN Nanocolumns
Hiroto Sekiguchi;Katsumi Kishino;Akihiko Kikuchi.
Applied Physics Express (2008)
Ti-mask Selective-Area Growth of GaN by RF-Plasma-Assisted Molecular-Beam Epitaxy for Fabricating Regularly Arranged InGaN/GaN Nanocolumns
Hiroto Sekiguchi;Katsumi Kishino;Akihiko Kikuchi.
Applied Physics Express (2008)
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