World's Best Scientists 2026 revealed!
Katsumi Kishino

Katsumi Kishino

D-Index & Metrics

Electronics and Electrical Engineering

D-Index
47
Citations
9599
World Ranking
3205
National Ranking
117

Katsumi Kishino publication distribution in Electronics and Electrical Engineering in 2026

The chart shows the distribution of publications by all Research.com ranked scientists in the field of Electronics and Electrical Engineering in 2026. The highlighted bar marks where Katsumi Kishino sits on this spectrum.

34–53 publications: 24 scientists 54–73 publications: 52 scientists 74–93 publications: 114 scientists 94–113 publications: 203 scientists 114–133 publications: 269 scientists 134–153 publications: 355 scientists 154–173 publications: 403 scientists 174–193 publications: 445 scientists 194–213 publications: 430 scientists 214–233 publications: 431 scientists 234–253 publications: 399 scientists 254–273 publications: 366 scientists 274–293 publications: 335 scientists 294–313 publications: 300 scientists 314–333 publications: 276 scientists 334–353 publications: 250 scientists 354–373 publications: 214 scientists 374–393 publications: 187 scientists 394–413 publications: 152 scientists 414–433 publications: 169 scientists 434–453 publications: 147 scientists 454–473 publications: 111 scientists 474–493 publications: 117 scientists 494–513 publications: 103 scientists 514–533 publications: 99 scientists 534–553 publications: 92 scientists 554–573 publications: 75 scientists 574–593 publications: 58 scientists 594–613 publications: 69 scientists 614–633 publications: 50 scientists 634–653 publications: 62 scientists 654–673 publications: 54 scientists 674–693 publications: 44 scientists 694–713 publications: 37 scientists 714–733 publications: 28 scientists 734–753 publications: 26 scientists 754–773 publications: 26 scientists 774–793 publications: 19 scientists 794–813 publications: 23 scientists 814–833 publications: 20 scientists 834–853 publications: 16 scientists 854–873 publications: 20 scientists 874–893 publications: 11 scientists 894–913 publications: 11 scientists 914–933 publications: 16 scientists 934–953 publications: 13 scientists 954–973 publications: 10 scientists 974–993 publications: 11 scientists 994–1,013 publications: 9 scientists 1,014–1,033 publications: 9 scientists 1,034–1,053 publications: 10 scientists 1,054–1,064 publications: 6 scientists 1,065+ publications: 99 scientists
34 publications 1,065+

This scientist: 431 publications — 78th percentile

78% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 1,065 publications or more.

Katsumi Kishino D-index placement in Electronics and Electrical Engineering in 2026

The chart shows the D-index (discipline H-index) distribution of Electronics and Electrical Engineering scientists ranked by Research.com in 2026. The highlighted bar marks where Katsumi Kishino sits on this spectrum.

30 D-Index: 178 scientists 31 D-Index: 257 scientists 32 D-Index: 263 scientists 33 D-Index: 262 scientists 34 D-Index: 244 scientists 35 D-Index: 236 scientists 36 D-Index: 211 scientists 37 D-Index: 220 scientists 38 D-Index: 214 scientists 39 D-Index: 214 scientists 40 D-Index: 205 scientists 41 D-Index: 187 scientists 42 D-Index: 194 scientists 43 D-Index: 201 scientists 44 D-Index: 155 scientists 45 D-Index: 189 scientists 46 D-Index: 148 scientists 47 D-Index: 160 scientists 48 D-Index: 134 scientists 49 D-Index: 130 scientists 50 D-Index: 141 scientists 51 D-Index: 156 scientists 52 D-Index: 108 scientists 53 D-Index: 130 scientists 54 D-Index: 112 scientists 55 D-Index: 97 scientists 56 D-Index: 111 scientists 57 D-Index: 102 scientists 58 D-Index: 108 scientists 59 D-Index: 120 scientists 60 D-Index: 103 scientists 61 D-Index: 93 scientists 62 D-Index: 92 scientists 63 D-Index: 74 scientists 64 D-Index: 77 scientists 65 D-Index: 73 scientists 66 D-Index: 64 scientists 67 D-Index: 69 scientists 68 D-Index: 60 scientists 69 D-Index: 39 scientists 70 D-Index: 57 scientists 71 D-Index: 59 scientists 72 D-Index: 46 scientists 73 D-Index: 49 scientists 74 D-Index: 38 scientists 75 D-Index: 35 scientists 76 D-Index: 32 scientists 77 D-Index: 35 scientists 78 D-Index: 31 scientists 79 D-Index: 22 scientists 80 D-Index: 34 scientists 81 D-Index: 31 scientists 82 D-Index: 34 scientists 83 D-Index: 23 scientists 84 D-Index: 18 scientists 85 D-Index: 30 scientists 86 D-Index: 19 scientists 87 D-Index: 19 scientists 88 D-Index: 20 scientists 89 D-Index: 8 scientists 90 D-Index: 17 scientists 91 D-Index: 7 scientists 92 D-Index: 14 scientists 93 D-Index: 9 scientists 94 D-Index: 15 scientists 95 D-Index: 10 scientists 96 D-Index: 12 scientists 97 D-Index: 10 scientists 98 D-Index: 10 scientists 99 D-Index: 12 scientists 100 D-Index: 16 scientists 101 D-Index: 5 scientists 102 D-Index: 7 scientists 103 D-Index: 7 scientists 104 D-Index: 8 scientists 105 D-Index: 9 scientists 106 D-Index: 13 scientists 107 D-Index: 4 scientists 108 D-Index: 5 scientists 109 D-Index: 10 scientists 110 D-Index: 8 scientists 111+ D-Index: 96 scientists
30 D-Index 111+

This scientist: 47 D-Index — 54th percentile

54% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 111 D-Index or more.

Research.com Recognitions

  • 2016 - IEEE Fellow For contributions to III-V light emitter technology

Overview

Katsumi Kishino is affiliated with Sophia University in Japan. Their research expertise primarily spans Physics and Astronomy, Materials Science, and Engineering. Within these areas, their work delves into several subfields including Condensed Matter Physics, Biomedical Engineering, Electronic, Optical and Magnetic Materials, Atomic and Molecular Physics and Optics, and Materials Chemistry.

The main topics covered in Kishino's research include GaN-based semiconductor devices and materials, Ga2O3 and related materials, ZnO doping and properties, semiconductor quantum structures and devices, nanowire synthesis and applications, optical coatings and gratings, and photonic crystals and applications.

Kishino has contributed multiple papers to various scientific journals. Some of their recent publications are as follows:

  • The influence of AlN buffer layer on the growth of self-assembled GaN nanocolumns on graphene, 2020, Scientific Reports
  • Graphene-Based Transparent Conducting Substrates for GaN/AlGaN Nanocolumn Flip-Chip Ultraviolet Light-Emitting Diodes, 2021, ACS Applied Nano Materials
  • Monolithically integrated green-to-orange color InGaN-based nanocolumn photonic crystal LEDs with directional radiation beam profiles, 2021, Applied Physics Express
  • Improving the luminous efficiency of red nanocolumn μ-LEDs by reducing electrode size to ϕ2.2 μm, 2023, Applied Physics Express
  • Energy diagram and parameters regarding localized states in InGaN/GaN nanocolumns, 2021, Journal of Applied Physics

These publications are found in established venues where Kishino has published recurrently, including Applied Physics Express, Scientific Reports, Japanese Journal of Applied Physics, Journal of Applied Physics, and ACS Applied Nano Materials.

Collaboration is a notable aspect of Kishino's research profile. Frequent co-authors include Rie Togashi, Takao Oto, K. Hoshino, Shunsuke Ishizawa, and Masaru Sakai.

In recognition of their contributions, Kishino was awarded the IEEE Fellow distinction in 2016 for work related to III-V light emitter technology.

Best Publications

  • InGaN/GaN Multiple Quantum Disk Nanocolumn Light-Emitting Diodes Grown on (111) Si Substrate

    Akihiko Kikuchi;Mizue Kawai;Makoto Tada;Katsumi Kishino

  • Emission color control from blue to red with nanocolumn diameter of InGaN/GaN nanocolumn arrays grown on same substrate

    Hiroto Sekiguchi;Katsumi Kishino;Akihiko Kikuchi

  • Growth of Self-Organized GaN Nanostructures on Al2O3(0001) by RF-Radical Source Molecular Beam Epitaxy

    Masaki Yoshizawa;Akihiko Kikuchi;Masashi Mori;Nobuhiko Fujita

  • Resonant cavity-enhanced (RCE) photodetectors

    K. Kishino;M.S. Unlu;J.-I. Chyi;J. Reed

  • Improved Ti-mask selective-area growth (SAG) by rf-plasma-assisted molecular beam epitaxy demonstrating extremely uniform GaN nanocolumn arrays

    Katsumi Kishino;Hiroto Sekiguchi;Akihiko Kikuchi

  • Ti-mask Selective-Area Growth of GaN by RF-Plasma-Assisted Molecular-Beam Epitaxy for Fabricating Regularly Arranged InGaN/GaN Nanocolumns

    Hiroto Sekiguchi;Katsumi Kishino;Akihiko Kikuchi

  • Intersubband transition in (GaN)m/(AlN)n superlattices in the wavelength range from 1.08 to 1.61 μm

    Katsumi Kishino;Akihiko Kikuchi;Hidekazu Kanazawa;Tetsuo Tachibana

  • Dynamic single-mode semiconductor lasers with a distributed reflector

    Y. Suematsu;S. Arai;K. Kishino

  • AlN/GaN double-barrier resonant tunneling diodes grown by rf-plasma-assisted molecular-beam epitaxy

    Akihiko Kikuchi;Ryo Bannai;Katsumi Kishino;Chia Ming Lee

  • Selective-area growth of GaN nanocolumns on Si(111) substrates for application to nanocolumn emitters with systematic analysis of dislocation filtering effect of nanocolumns.

    Katsumi Kishino;Shunsuke Ishizawa

  • Monolithic Integration of InGaN-Based Nanocolumn Light-Emitting Diodes with Different Emission Colors

    Katsumi Kishino;Kazuya Nagashima;Kouji Yamano

  • Wavelength variation of 1.6 µm wavelength buried heterostructure GaInAsP/InP lasers due to direct modulation

    K. Kishino;S. Aoki;Y. Suematsu

  • InGaN/GaN nanocolumn LEDs emitting from blue to red

    K. Kishino;A. Kikuchi;H. Sekiguchi;S. Ishizawa

  • Strain relaxation effect by nanotexturing InGaN/GaN multiple quantum well

    V. Ramesh;Akihiko Kikuchi;Katsumi Kishino;Mitsuru Funato

  • Self-organization of GaN/Al0.18Ga0.82N multi-layer nano-columns on (0 0 0 1) Al2O3 by RF molecular beam epitaxy for fabricating GaN quantum disks

    Masaki Yoshizawa;Akihiko Kikuchi;Nobuhiko Fujita;Kouichi Kushi

  • Origin of high oscillator strength in green-emitting InGaN∕GaN nanocolumns

    Y. Kawakami;S. Suzuki;A. Kaneta;M. Funato

  • Ultrafast intersubband relaxation and nonlinear susceptibility at 1.55 μm in GaN/AlN multiple-quantum wells

    J. Hamazaki;S. Matsui;H. Kunugita;K. Ema

  • Characterization of Overgrown GaN Layers on Nano-Columns Grown by RF-Molecular Beam Epitaxy

    Kazuhide Kusakabe;Akihiko Kikuchi;Katsumi Kishino

  • Selective-area growth of GaN nanocolumns on titanium-mask-patterned silicon (111) substrates by RF-plasma-assisted molecular-beam epitaxy

    K. Kishino;T. Hoshino;S. Ishizawa;A. Kikuchi

  • Structural and optical properties of GaN nanocolumns grown on (0001) sapphire substrates by rf-plasma-assisted molecular-beam epitaxy

    Hiroto Sekiguchi;Takuya Nakazato;Akihiko Kikuchi;Katsumi Kishino

  • Optical properties of InGaN/GaN nanopillars fabricated by postgrowth chemically assisted ion beam etching

    Y. Kawakami;A. Kaneta;L. Su;Y. Zhu

Frequent Co-Authors

Akihiko Kikuchi
Akihiko Kikuchi Tokyo University of Science
Yoichi Kawakami
Yoichi Kawakami Kyoto University
Jen-Inn Chyi
Jen-Inn Chyi National Central University
Yasuharu Suematsu
Yasuharu Suematsu Tokyo Institute of Technology
Shigehisa Arai
Shigehisa Arai Tokyo Institute of Technology
Hadis Morkoç
Hadis Morkoç Virginia Commonwealth University
M. S. Ünlü
M. S. Ünlü Boston University
Shizuo Fujita
Shizuo Fujita Kyoto University
Shigefusa F. Chichibu
Shigefusa F. Chichibu Tohoku University
Albert V. Davydov
Albert V. Davydov National Institute of Standards and Technology

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