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Katsumi Kishino

Katsumi Kishino

D-Index & Metrics

Electronics and Electrical Engineering

D-Index
47
Citations
9599
World Ranking
3205
National Ranking
117

Research.com Recognitions

  • 2016 - IEEE Fellow For contributions to III-V light emitter technology

Overview

Katsumi Kishino is affiliated with Sophia University in Japan. Their research expertise primarily spans Physics and Astronomy, Materials Science, and Engineering. Within these areas, their work delves into several subfields including Condensed Matter Physics, Biomedical Engineering, Electronic, Optical and Magnetic Materials, Atomic and Molecular Physics and Optics, and Materials Chemistry.

The main topics covered in Kishino's research include GaN-based semiconductor devices and materials, Ga2O3 and related materials, ZnO doping and properties, semiconductor quantum structures and devices, nanowire synthesis and applications, optical coatings and gratings, and photonic crystals and applications.

Kishino has contributed multiple papers to various scientific journals. Some of their recent publications are as follows:

  • The influence of AlN buffer layer on the growth of self-assembled GaN nanocolumns on graphene, 2020, Scientific Reports
  • Graphene-Based Transparent Conducting Substrates for GaN/AlGaN Nanocolumn Flip-Chip Ultraviolet Light-Emitting Diodes, 2021, ACS Applied Nano Materials
  • Monolithically integrated green-to-orange color InGaN-based nanocolumn photonic crystal LEDs with directional radiation beam profiles, 2021, Applied Physics Express
  • Improving the luminous efficiency of red nanocolumn μ-LEDs by reducing electrode size to ϕ2.2 μm, 2023, Applied Physics Express
  • Energy diagram and parameters regarding localized states in InGaN/GaN nanocolumns, 2021, Journal of Applied Physics

These publications are found in established venues where Kishino has published recurrently, including Applied Physics Express, Scientific Reports, Japanese Journal of Applied Physics, Journal of Applied Physics, and ACS Applied Nano Materials.

Collaboration is a notable aspect of Kishino's research profile. Frequent co-authors include Rie Togashi, Takao Oto, K. Hoshino, Shunsuke Ishizawa, and Masaru Sakai.

In recognition of their contributions, Kishino was awarded the IEEE Fellow distinction in 2016 for work related to III-V light emitter technology.

Best Publications

  • InGaN/GaN Multiple Quantum Disk Nanocolumn Light-Emitting Diodes Grown on (111) Si Substrate

    Akihiko Kikuchi;Mizue Kawai;Makoto Tada;Katsumi Kishino

  • Emission color control from blue to red with nanocolumn diameter of InGaN/GaN nanocolumn arrays grown on same substrate

    Hiroto Sekiguchi;Katsumi Kishino;Akihiko Kikuchi

  • Growth of Self-Organized GaN Nanostructures on Al2O3(0001) by RF-Radical Source Molecular Beam Epitaxy

    Masaki Yoshizawa;Akihiko Kikuchi;Masashi Mori;Nobuhiko Fujita

  • Resonant cavity-enhanced (RCE) photodetectors

    K. Kishino;M.S. Unlu;J.-I. Chyi;J. Reed

  • Improved Ti-mask selective-area growth (SAG) by rf-plasma-assisted molecular beam epitaxy demonstrating extremely uniform GaN nanocolumn arrays

    Katsumi Kishino;Hiroto Sekiguchi;Akihiko Kikuchi

  • Ti-mask Selective-Area Growth of GaN by RF-Plasma-Assisted Molecular-Beam Epitaxy for Fabricating Regularly Arranged InGaN/GaN Nanocolumns

    Hiroto Sekiguchi;Katsumi Kishino;Akihiko Kikuchi

  • Intersubband transition in (GaN)m/(AlN)n superlattices in the wavelength range from 1.08 to 1.61 μm

    Katsumi Kishino;Akihiko Kikuchi;Hidekazu Kanazawa;Tetsuo Tachibana

  • Dynamic single-mode semiconductor lasers with a distributed reflector

    Y. Suematsu;S. Arai;K. Kishino

  • AlN/GaN double-barrier resonant tunneling diodes grown by rf-plasma-assisted molecular-beam epitaxy

    Akihiko Kikuchi;Ryo Bannai;Katsumi Kishino;Chia Ming Lee

  • Selective-area growth of GaN nanocolumns on Si(111) substrates for application to nanocolumn emitters with systematic analysis of dislocation filtering effect of nanocolumns.

    Katsumi Kishino;Shunsuke Ishizawa

  • Monolithic Integration of InGaN-Based Nanocolumn Light-Emitting Diodes with Different Emission Colors

    Katsumi Kishino;Kazuya Nagashima;Kouji Yamano

  • Wavelength variation of 1.6 µm wavelength buried heterostructure GaInAsP/InP lasers due to direct modulation

    K. Kishino;S. Aoki;Y. Suematsu

  • InGaN/GaN nanocolumn LEDs emitting from blue to red

    K. Kishino;A. Kikuchi;H. Sekiguchi;S. Ishizawa

  • Strain relaxation effect by nanotexturing InGaN/GaN multiple quantum well

    V. Ramesh;Akihiko Kikuchi;Katsumi Kishino;Mitsuru Funato

  • Self-organization of GaN/Al0.18Ga0.82N multi-layer nano-columns on (0 0 0 1) Al2O3 by RF molecular beam epitaxy for fabricating GaN quantum disks

    Masaki Yoshizawa;Akihiko Kikuchi;Nobuhiko Fujita;Kouichi Kushi

  • Origin of high oscillator strength in green-emitting InGaN∕GaN nanocolumns

    Y. Kawakami;S. Suzuki;A. Kaneta;M. Funato

  • Ultrafast intersubband relaxation and nonlinear susceptibility at 1.55 μm in GaN/AlN multiple-quantum wells

    J. Hamazaki;S. Matsui;H. Kunugita;K. Ema

  • Characterization of Overgrown GaN Layers on Nano-Columns Grown by RF-Molecular Beam Epitaxy

    Kazuhide Kusakabe;Akihiko Kikuchi;Katsumi Kishino

  • Selective-area growth of GaN nanocolumns on titanium-mask-patterned silicon (111) substrates by RF-plasma-assisted molecular-beam epitaxy

    K. Kishino;T. Hoshino;S. Ishizawa;A. Kikuchi

  • Structural and optical properties of GaN nanocolumns grown on (0001) sapphire substrates by rf-plasma-assisted molecular-beam epitaxy

    Hiroto Sekiguchi;Takuya Nakazato;Akihiko Kikuchi;Katsumi Kishino

  • Optical properties of InGaN/GaN nanopillars fabricated by postgrowth chemically assisted ion beam etching

    Y. Kawakami;A. Kaneta;L. Su;Y. Zhu

Frequent Co-Authors

Akihiko Kikuchi
Akihiko Kikuchi Tokyo University of Science
Yoichi Kawakami
Yoichi Kawakami Kyoto University
Jen-Inn Chyi
Jen-Inn Chyi National Central University
Yasuharu Suematsu
Yasuharu Suematsu Tokyo Institute of Technology
Shigehisa Arai
Shigehisa Arai Tokyo Institute of Technology
Hadis Morkoç
Hadis Morkoç Virginia Commonwealth University
M. S. Ünlü
M. S. Ünlü Boston University
Shizuo Fujita
Shizuo Fujita Kyoto University
Shigefusa F. Chichibu
Shigefusa F. Chichibu Tohoku University
Albert V. Davydov
Albert V. Davydov National Institute of Standards and Technology

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