World's Best Scientists 2026 revealed!

D-Index & Metrics

Materials Science

D-Index
66
Citations
27914
World Ranking
5232
National Ranking
1367

Research.com Recognitions

  • 1972 - Fellow of American Physical Society (APS)

Overview

D. R. Hamann is affiliated with Rutgers, The State University of New Jersey in the United States. Their research primarily focuses on the fields of Materials Science, with particular attention to Materials Chemistry and Mechanics of Materials as notable subfields.

The main topics of their scientific work include Chemical and Physical Properties of Materials, Muon and positron interactions and applications, as well as Boron and Carbon Nanomaterials Research.

Hamann has published recent papers in The Journal of Chemical Physics. These include:

  • ABINIT: Overview and focus on selected capabilities (2020, The Journal of Chemical Physics)
  • Abinit 2025: New capabilities for the predictive modeling of solids and nanomaterials (2025, The Journal of Chemical Physics)

Frequent co-authors in these publications include:

  • A. Romero
  • Bernard Amadon
  • Gabriel Antonius
  • Lucas Baguet
  • Jordan Bieder

The primary venue for Hamann's publications is The Journal of Chemical Physics, where they have contributed multiple articles.

In recognition of their professional contributions, Hamann was awarded the title of Fellow of the American Physical Society (APS) in 1972.

Best Publications

  • Theory of the scanning tunneling microscope

    J. Tersoff;D. R. Hamann

  • Theory and Application for the Scanning Tunneling Microscope

    J. Tersoff;D. R. Hamann

  • ABINIT: First-principles approach to material and nanosystem properties

    Xavier Gonze;B. Amadon;P.-M. Anglade;Jean-Michel Beuken

  • Reproducibility in density functional theory calculations of solids

    Kurt Lejaeghere;Gustav Bihlmayer;Torbjörn Björkman;Torbjörn Björkman;Peter Blaha

  • Recent developments in the ABINIT software package

    X. Gonze;F. Jollet;F. Abreu Araujo;D. Adams

  • Direct fabrication of large micropatterned single crystals

    Joanna Aizenberg;David A. Muller;John L. Grazul;D. R. Hamann

  • Interatomic potentials for silicon structural energies.

    R. Biswas;D. R. Hamann

  • Electronic structure of Ba Pb 1 − x Bi x O 3

    L. F. Mattheiss;D. R. Hamann

  • Real-Space Observation of Surface States on Si(111) 7×7 with the Tunneling Microscope

    R. S. Becker;Jene Andrew Golovchenko;D. R. Hamann;B. S. Swartzentruber

  • Electronic structure of the high T c superconductor Ba 2 YCu 3 O 6.9

    L. F. Mattheiss;D. R. Hamann

  • Electronic Structure of a "Poisoned" Transition-Metal Surface

    Peter J. Feibelman;D. R. Hamann

  • ABINIT: Overview and focus on selected capabilities.

    Aldo H. Romero;Douglas C. Allan;Bernard Amadon;Gabriel Antonius

  • New classical models for silicon structural energies

    R. Biswas;D. R. Hamann

  • Modification of transition metal electronic structure by P, S, Cl, and Li adatoms

    Peter J. Feibelman;D.R. Hamann

  • Surface States and Surface Bonds of Si(111)

    Joel A. Appelbaum;D. R. Hamann

  • Semiconductor Charge Densities with Hard-Core and Soft-Core Pseudopotentials

    D. R. Hamann

  • Theory of reconstruction induced subsurface strain — application to Si(100)

    Joel A. Appelbaum;D.R. Hamann

  • The electronic structure of solid surfaces

    Joel A. Appelbaum;D. R. Hamann

  • Linear augmented-plane-wave calculation of the structural properties of bulk Cr, Mo, and W

    L. F. Mattheiss;D. R. Hamann

  • Simulated annealing of silicon atom clusters in Langevin molecular dynamics.

    R. Biswas;D. R. Hamann

  • Self-Consistent Calculation of the Electronic Structure at an Abrupt GaAs-Ge Interface

    G. A. Baraff;Joel A. Appelbaum;D. R. Hamann

  • Electronic structure of the high-Tc superconductor Ba1-xKxBiO3.

    L. F. Mattheiss;D. R. Hamann

  • Vibrational frequencies and structural properties of transition metals via total-energy calculations

    K. M. Ho;C. L. Fu;B. N. Harmon;W. Weber

  • Bonding and structure of Co Si 2 and Ni Si 2

    J. Tersoff;D. R. Hamann

Frequent Co-Authors

Peter J. Feibelman
Peter J. Feibelman Sandia National Laboratories
Jerry Tersoff
Jerry Tersoff IBM (United States)
Samuel A. Safran
Samuel A. Safran Weizmann Institute of Science
Rana Biswas
Rana Biswas Iowa State University
Charles H. F. Peden
Charles H. F. Peden Pacific Northwest National Laboratory
Peter J. Anderson
Peter J. Anderson Monash University
Brian S. Swartzentruber
Brian S. Swartzentruber Sandia National Laboratories
Kai-Ming Ho
Kai-Ming Ho Iowa State University
Jene Andrew Golovchenko
Jene Andrew Golovchenko Harvard University

If you think any of the details on this page are incorrect, let us know.

Report an issue

We appreciate your kind effort to assist us to improve this page, it would be helpful providing us with as much detail as possible in the text box below:

Best Scientists Citing D. R. Hamann

Trending Scientists

Recently Published Articles