2026 Jerry Tersoff: Materials Science Researcher – H-Index, Publications & Awards

Discipline name	D-Index	World Ranking	Current World Ranking	National Ranking	Current National Ranking	Publications	Citations
Materials Science	101	988	943	321	296	283	65932
Physics	101	1561	1482	825	771	283	66269

Research.com Recognitions

2019 - Von Hippel Award, Materials Research Society “for advancing the understanding of low-dimensional and nanoscale electronic materials, surfaces and interfaces, through elegant theoretical models that highlight the essential physics controlling growth, structure and electronic properties
2018 - Member of the National Academy of Engineering For theoretical contributions to the engineering science of materials growth and modeling, nanoscale electronic devices, and semiconductor interfaces.
2010 - Fellow of the Materials Research Society
1997 - Davisson–Germer Prize in Atomic or Surface Physics, American Physical Society
1996 - MRS Medal, Materials Research Society For seminal contributions to the theory of strain relaxation in thin films.
1994 - Fellow of American Physical Society (APS) Citation For pioneering contributions toward a deeper understanding of the structure and electronic properties of surfaces and interfaces

Overview

Jerry Tersoff is affiliated with IBM in the United States and has contributed extensively to the fields of Physics and Astronomy, Engineering, and Materials Science. Their research focuses on subfields including Atomic and Molecular Physics and Optics, Electrical and Electronic Engineering, Materials Chemistry, Condensed Matter Physics, and Biomedical Engineering.

The scientist's work covers a broad range of main topics, highlighting areas such as Semiconductor Quantum Structures and Devices, GaN-based semiconductor devices and materials, Semiconductor Lasers and Optical Devices, Nanowire Synthesis and Applications, 2D Materials and Applications, Perovskite Materials and Applications, and Graphene research and applications.

Jerry Tersoff's recent publications include:

High-brightness lasing at submicrometer enabled by droop-free fin light-emitting diodes (LEDs), 2020, Science Advances
Chip-Scale Droop-Free Fin Light-Emitting Diodes Using Facet-Selective Contacts, 2021, ACS Applied Materials & Interfaces
Simple linear response model for predicting energy band alignment of two-dimensional vertical heterostructures, 2021, Physical Review B
Reversible Decomposition of Single-Crystal Methylammonium Lead Iodide Perovskite Nanorods, 2020, ACS Central Science
Tuning the Doping of Epitaxial Graphene on a Conventional Semiconductor via Substrate Surface Reconstruction, 2021, The Journal of Physical Chemistry Letters

The scientist frequently publishes in venues such as:

ACS Central Science
arXiv (Cornell University)
Science Advances
ACS Applied Materials & Interfaces
Physical Review B

Frequent co-authors working with Jerry Tersoff include:

Babak Nikoobakht
Robin P. Hansen
Yuqin Zong
M. S. Shur
Amit Agrawal

Tersoff has been recognized with several awards, including the Von Hippel Award from the Materials Research Society in 2019, for advancing understanding of low-dimensional and nanoscale electronic materials, surfaces, and interfaces through theoretical models.

They were elected a Member of the National Academy of Engineering in 2018 for theoretical contributions to materials growth and modeling, nanoscale electronic devices, and semiconductor interfaces.

Other honors include Fellow of the Materials Research Society (2010), the Davisson-Germer Prize in Atomic or Surface Physics from the American Physical Society (1997), the MRS Medal from the Materials Research Society (1996), and Fellow of the American Physical Society (1994), recognizing pioneering contributions to surface and interface structure and electronic properties.

Best Publications

Theory of the scanning tunneling microscope

J. Tersoff;D. R. Hamann

6044
Citations
Modeling Solid-State Chemistry: Interatomic Potentials for Multicomponent Systems

J. Tersoff

5699
Citations
New empirical approach for the structure and energy of covalent systems

J. Tersoff

4580
Citations
Theory and Application for the Scanning Tunneling Microscope

J. Tersoff;D. R. Hamann

3633
Citations
Empirical interatomic potential for carbon, with application to amorphous carbon

J. Tersoff

2509
Citations
Empirical interatomic potential for silicon with improved elastic properties.

J. Tersoff

2078
Citations
New empirical model for the structural properties of silicon

J. Tersoff

1901
Citations
Schottky Barrier Heights and the Continuum of Gap States

J. Tersoff

1733
Citations
Carbon nanotubes as schottky barrier transistors.

S. Heinze;J. Tersoff;R. Martel;V. Derycke

1719
Citations
Self-organization in growth of quantum dot superlattices.

J. Tersoff;C. Teichert;M. G. Lagally

1585
Citations
Electrically Induced Optical Emission from a Carbon Nanotube FET

J. A. Misewich;R. Martel;Ph. Avouris;J. C. Tsang

1209
Citations
Theory of semiconductor heterojunctions: The role of quantum dipoles

J. Tersoff

1151
Citations
Shape transition in growth of strained islands: Spontaneous formation of quantum wires.

J. Tersoff;R. M. Tromp

1109
Citations
Competing relaxation mechanisms in strained layers.

J. Tersoff;F. K. LeGoues

1081
Citations
Ambipolar electrical transport in semiconducting single-wall carbon nanotubes.

R. Martel;V. Derycke;C. Lavoie;J. Appenzeller

1068
Citations
Scanning tunneling microscopy

Paul K. Hansma;Jerry Tersoff

977
Citations
Coarsening of Self-Assembled Ge Quantum Dots on Si(001)

F. M. Ross;J. Tersoff;R. M. Tromp

891
Citations
Scaling of excitons in carbon nanotubes.

Vasili Perebeinos;J. Tersoff;Phaedon Avouris

847
Citations
Atom-selective imaging of the GaAs(110) surface.

R. M. Feenstra;Joseph A. Stroscio;J. Tersoff;A. P. Fein

830
Citations
Germanium nanowire growth below the eutectic temperature

S. Kodambaka;J. Tersoff;M. C. Reuter;F. M. Ross

771
Citations