2019 - Von Hippel Award, Materials Research Society “for advancing the understanding of low-dimensional and nanoscale electronic materials, surfaces and interfaces, through elegant theoretical models that highlight the essential physics controlling growth, structure and electronic properties
2018 - Member of the National Academy of Engineering For theoretical contributions to the engineering science of materials growth and modeling, nanoscale electronic devices, and semiconductor interfaces.
2010 - Fellow of the Materials Research Society
1997 - Davisson–Germer Prize in Atomic or Surface Physics, American Physical Society
1996 - MRS Medal, Materials Research Society For seminal contributions to the theory of strain relaxation in thin films.
1994 - Fellow of American Physical Society (APS) Citation For pioneering contributions toward a deeper understanding of the structure and electronic properties of surfaces and interfaces
The scientist’s investigation covers issues in Condensed matter physics, Nanotechnology, Carbon nanotube, Quantum tunnelling and Schottky barrier. His Condensed matter physics research is multidisciplinary, incorporating perspectives in Scattering, Fermi level, Epitaxy, Dielectric and Graphene. His Nanotechnology research includes themes of Optoelectronics, Heterojunction and van der Waals force.
His Carbon nanotube research incorporates elements of Carbon nanotube field-effect transistor and Schottky diode. Jerry Tersoff combines subjects such as Liquid nitrogen and Scanning tunneling microscope with his study of Quantum tunnelling. His work investigates the relationship between Schottky barrier and topics such as Semiconductor that intersect with problems in Electronic band structure, Band gap, Quantum, Anderson's rule and Continuum.
Jerry Tersoff focuses on Condensed matter physics, Nanotechnology, Optoelectronics, Carbon nanotube and Chemical physics. Jerry Tersoff interconnects Graphene, Schottky barrier, Semiconductor and Epitaxy in the investigation of issues within Condensed matter physics. In Nanotechnology, he works on issues like Silicon, which are connected to Mineralogy.
His studies deal with areas such as Voltage, Scaling and Ambipolar diffusion as well as Optoelectronics. His Carbon nanotube research includes elements of Carbon nanotube field-effect transistor, Transistor and Contact resistance. His work deals with themes such as Electron microscope and Nucleation, which intersect with Chemical physics.
His main research concerns Nanotechnology, Optoelectronics, Carbon nanotube, Nanowire and Condensed matter physics. His Nanotechnology study combines topics in areas such as Composite material and Silicon. His work in the fields of Optoelectronics, such as Semiconductor, overlaps with other areas such as Voltage droop.
His Carbon nanotube research incorporates themes from Carbon nanotube field-effect transistor, Transistor, Capillary action and Contact resistance. His research in Nanowire intersects with topics in Chemical physics, Crystal growth, Transmission electron microscopy, Kinetic energy and Vapor pressure. The concepts of his Condensed matter physics study are interwoven with issues in Quantum dot, van der Waals force and Epitaxy.
Nanotechnology, Carbon nanotube, Transistor, Nanowire and Silicon are his primary areas of study. His research integrates issues of Chemical physics, Optoelectronics, Quantum and Electron microscope in his study of Nanotechnology. The study incorporates disciplines such as Monolayer and Quantum wire in addition to Optoelectronics.
Jerry Tersoff studies Carbon nanotube, namely Nanotube. In the field of Transistor, his study on Carbon nanotube field-effect transistor overlaps with subjects such as Footprint. His studies in Silicon integrate themes in fields like Elasticity, Stress, Composite material, Plasticity and Strain engineering.
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Theory of the scanning tunneling microscope
J. Tersoff;D. R. Hamann.
Physical Review B (1985)
New empirical approach for the structure and energy of covalent systems
Physical Review B (1988)
Theory and Application for the Scanning Tunneling Microscope
J. Tersoff;D. R. Hamann.
Physical Review Letters (1983)
Empirical interatomic potential for carbon, with application to amorphous carbon
Physical Review Letters (1988)
Empirical interatomic potential for silicon with improved elastic properties.
Physical Review B (1988)
New empirical model for the structural properties of silicon
Physical Review Letters (1986)
Schottky Barrier Heights and the Continuum of Gap States
Physical Review Letters (1984)
Carbon nanotubes as schottky barrier transistors.
S. Heinze;J. Tersoff;R. Martel;V. Derycke.
Physical Review Letters (2002)
Self-organization in growth of quantum dot superlattices.
J. Tersoff;C. Teichert;M. G. Lagally.
Physical Review Letters (1996)
Electrically Induced Optical Emission from a Carbon Nanotube FET
J. A. Misewich;R. Martel;Ph. Avouris;J. C. Tsang.
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