World's Best Scientists 2026 revealed!

D-Index & Metrics

Materials Science

D-Index
101
Citations
65932
World Ranking
988
National Ranking
320

Physics

D-Index
101
Citations
66269
World Ranking
1561
National Ranking
825

Jerry Tersoff publication distribution in Materials Science in 2026

The chart shows the distribution of publications by all Research.com ranked scientists in the field of Materials Science in 2026. The highlighted bar marks where Jerry Tersoff sits on this spectrum.

50–69 publications: 28 scientists 70–89 publications: 152 scientists 90–109 publications: 356 scientists 110–129 publications: 487 scientists 130–149 publications: 723 scientists 150–169 publications: 835 scientists 170–189 publications: 850 scientists 190–209 publications: 891 scientists 210–229 publications: 862 scientists 230–249 publications: 766 scientists 250–269 publications: 726 scientists 270–289 publications: 665 scientists 290–309 publications: 593 scientists 310–329 publications: 537 scientists 330–349 publications: 477 scientists 350–369 publications: 440 scientists 370–389 publications: 356 scientists 390–409 publications: 321 scientists 410–429 publications: 256 scientists 430–449 publications: 246 scientists 450–469 publications: 216 scientists 470–489 publications: 212 scientists 490–509 publications: 174 scientists 510–529 publications: 194 scientists 530–549 publications: 162 scientists 550–569 publications: 131 scientists 570–589 publications: 111 scientists 590–609 publications: 103 scientists 610–629 publications: 99 scientists 630–649 publications: 77 scientists 650–669 publications: 92 scientists 670–689 publications: 56 scientists 690–709 publications: 53 scientists 710–729 publications: 53 scientists 730–749 publications: 38 scientists 750–769 publications: 52 scientists 770–789 publications: 43 scientists 790–809 publications: 38 scientists 810–829 publications: 34 scientists 830–849 publications: 25 scientists 850–869 publications: 18 scientists 870–889 publications: 20 scientists 890–909 publications: 24 scientists 910–929 publications: 27 scientists 930–949 publications: 20 scientists 950–969 publications: 17 scientists 970–989 publications: 10 scientists 990–1,009 publications: 16 scientists 1,010–1,029 publications: 13 scientists 1,030–1,049 publications: 12 scientists 1,050–1,069 publications: 9 scientists 1,070–1,089 publications: 8 scientists 1,090–1,109 publications: 7 scientists 1,110–1,129 publications: 9 scientists 1,130–1,149 publications: 2 scientists 1,150–1,162 publications: 5 scientists 1,163+ publications: 100 scientists
50 publications 1,163+

This scientist: 283 publications — 56th percentile

56% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 1,163 publications or more.

Jerry Tersoff D-index placement in Materials Science in 2026

The chart shows the D-index (discipline H-index) distribution of Materials Science scientists ranked by Research.com in 2026. The highlighted bar marks where Jerry Tersoff sits on this spectrum.

40–41 D-Index: 211 scientists 42–43 D-Index: 450 scientists 44–45 D-Index: 612 scientists 46–47 D-Index: 612 scientists 48–49 D-Index: 598 scientists 50–51 D-Index: 657 scientists 52–53 D-Index: 667 scientists 54–55 D-Index: 621 scientists 56–57 D-Index: 597 scientists 58–59 D-Index: 610 scientists 60–61 D-Index: 587 scientists 62–63 D-Index: 606 scientists 64–65 D-Index: 533 scientists 66–67 D-Index: 490 scientists 68–69 D-Index: 469 scientists 70–71 D-Index: 378 scientists 72–73 D-Index: 421 scientists 74–75 D-Index: 359 scientists 76–77 D-Index: 323 scientists 78–79 D-Index: 299 scientists 80–81 D-Index: 230 scientists 82–83 D-Index: 210 scientists 84–85 D-Index: 195 scientists 86–87 D-Index: 203 scientists 88–89 D-Index: 175 scientists 90–91 D-Index: 175 scientists 92–93 D-Index: 142 scientists 94–95 D-Index: 121 scientists 96–97 D-Index: 117 scientists 98–99 D-Index: 107 scientists 100–101 D-Index: 88 scientists 102–103 D-Index: 85 scientists 104–105 D-Index: 68 scientists 106–107 D-Index: 62 scientists 108–109 D-Index: 57 scientists 110–111 D-Index: 45 scientists 112–113 D-Index: 49 scientists 114–115 D-Index: 50 scientists 116–117 D-Index: 34 scientists 118–119 D-Index: 38 scientists 120–121 D-Index: 37 scientists 122–123 D-Index: 29 scientists 124–125 D-Index: 28 scientists 126–127 D-Index: 24 scientists 128–129 D-Index: 33 scientists 130–131 D-Index: 28 scientists 132–133 D-Index: 21 scientists 134–135 D-Index: 20 scientists 136–137 D-Index: 23 scientists 138–139 D-Index: 17 scientists 140–141 D-Index: 12 scientists 142–143 D-Index: 17 scientists 144–145 D-Index: 21 scientists 146–147 D-Index: 13 scientists 148–149 D-Index: 11 scientists 150–151 D-Index: 14 scientists 152–153 D-Index: 13 scientists 154–155 D-Index: 9 scientists 156–157 D-Index: 10 scientists 158–159 D-Index: 7 scientists 160–161 D-Index: 4 scientists 162–163 D-Index: 4 scientists 164 D-Index: 3 scientists 165+ D-Index: 98 scientists
40 D-Index 165+

This scientist: 101 D-Index — 92nd percentile

92% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 165 D-Index or more.

Research.com Recognitions

  • 2019 - Von Hippel Award, Materials Research Society “for advancing the understanding of low-dimensional and nanoscale electronic materials, surfaces and interfaces, through elegant theoretical models that highlight the essential physics controlling growth, structure and electronic properties
  • 2018 - Member of the National Academy of Engineering For theoretical contributions to the engineering science of materials growth and modeling, nanoscale electronic devices, and semiconductor interfaces.
  • 2010 - Fellow of the Materials Research Society
  • 1997 - Davisson–Germer Prize in Atomic or Surface Physics, American Physical Society
  • 1996 - MRS Medal, Materials Research Society For seminal contributions to the theory of strain relaxation in thin films.
  • 1994 - Fellow of American Physical Society (APS) Citation For pioneering contributions toward a deeper understanding of the structure and electronic properties of surfaces and interfaces

Overview

Jerry Tersoff is affiliated with IBM in the United States and has contributed extensively to the fields of Physics and Astronomy, Engineering, and Materials Science. Their research focuses on subfields including Atomic and Molecular Physics and Optics, Electrical and Electronic Engineering, Materials Chemistry, Condensed Matter Physics, and Biomedical Engineering.

The scientist's work covers a broad range of main topics, highlighting areas such as Semiconductor Quantum Structures and Devices, GaN-based semiconductor devices and materials, Semiconductor Lasers and Optical Devices, Nanowire Synthesis and Applications, 2D Materials and Applications, Perovskite Materials and Applications, and Graphene research and applications.

Jerry Tersoff's recent publications include:

  • High-brightness lasing at submicrometer enabled by droop-free fin light-emitting diodes (LEDs), 2020, Science Advances
  • Chip-Scale Droop-Free Fin Light-Emitting Diodes Using Facet-Selective Contacts, 2021, ACS Applied Materials & Interfaces
  • Simple linear response model for predicting energy band alignment of two-dimensional vertical heterostructures, 2021, Physical Review B
  • Reversible Decomposition of Single-Crystal Methylammonium Lead Iodide Perovskite Nanorods, 2020, ACS Central Science
  • Tuning the Doping of Epitaxial Graphene on a Conventional Semiconductor via Substrate Surface Reconstruction, 2021, The Journal of Physical Chemistry Letters

The scientist frequently publishes in venues such as:

  • ACS Central Science
  • arXiv (Cornell University)
  • Science Advances
  • ACS Applied Materials & Interfaces
  • Physical Review B

Frequent co-authors working with Jerry Tersoff include:

  • Babak Nikoobakht
  • Robin P. Hansen
  • Yuqin Zong
  • M. S. Shur
  • Amit Agrawal

Tersoff has been recognized with several awards, including the Von Hippel Award from the Materials Research Society in 2019, for advancing understanding of low-dimensional and nanoscale electronic materials, surfaces, and interfaces through theoretical models.

They were elected a Member of the National Academy of Engineering in 2018 for theoretical contributions to materials growth and modeling, nanoscale electronic devices, and semiconductor interfaces.

Other honors include Fellow of the Materials Research Society (2010), the Davisson-Germer Prize in Atomic or Surface Physics from the American Physical Society (1997), the MRS Medal from the Materials Research Society (1996), and Fellow of the American Physical Society (1994), recognizing pioneering contributions to surface and interface structure and electronic properties.

Best Publications

  • Theory of the scanning tunneling microscope

    J. Tersoff;D. R. Hamann

  • Modeling Solid-State Chemistry: Interatomic Potentials for Multicomponent Systems

    J. Tersoff

  • New empirical approach for the structure and energy of covalent systems

    J. Tersoff

  • Theory and Application for the Scanning Tunneling Microscope

    J. Tersoff;D. R. Hamann

  • Empirical interatomic potential for carbon, with application to amorphous carbon

    J. Tersoff

  • Empirical interatomic potential for silicon with improved elastic properties.

    J. Tersoff

  • New empirical model for the structural properties of silicon

    J. Tersoff

  • Schottky Barrier Heights and the Continuum of Gap States

    J. Tersoff

  • Carbon nanotubes as schottky barrier transistors.

    S. Heinze;J. Tersoff;R. Martel;V. Derycke

  • Self-organization in growth of quantum dot superlattices.

    J. Tersoff;C. Teichert;M. G. Lagally

  • Electrically Induced Optical Emission from a Carbon Nanotube FET

    J. A. Misewich;R. Martel;Ph. Avouris;J. C. Tsang

  • Theory of semiconductor heterojunctions: The role of quantum dipoles

    J. Tersoff

  • Shape transition in growth of strained islands: Spontaneous formation of quantum wires.

    J. Tersoff;R. M. Tromp

  • Competing relaxation mechanisms in strained layers.

    J. Tersoff;F. K. LeGoues

  • Ambipolar electrical transport in semiconducting single-wall carbon nanotubes.

    R. Martel;V. Derycke;C. Lavoie;J. Appenzeller

  • Scanning tunneling microscopy

    Paul K. Hansma;Jerry Tersoff

  • Coarsening of Self-Assembled Ge Quantum Dots on Si(001)

    F. M. Ross;J. Tersoff;R. M. Tromp

  • Scaling of excitons in carbon nanotubes.

    Vasili Perebeinos;J. Tersoff;Phaedon Avouris

  • Atom-selective imaging of the GaAs(110) surface.

    R. M. Feenstra;Joseph A. Stroscio;J. Tersoff;A. P. Fein

  • Germanium nanowire growth below the eutectic temperature

    S. Kodambaka;J. Tersoff;M. C. Reuter;F. M. Ross

Frequent Co-Authors

Mark C. Reuter
Mark C. Reuter IBM (United States)
Rudolf M. Tromp
Rudolf M. Tromp IBM (United States)
Phaedon Avouris
Phaedon Avouris IBM (United States)
Vasili Perebeinos
Vasili Perebeinos University at Buffalo, State University of New York
Eric A. Stach
Eric A. Stach University of Pennsylvania
Armando Rastelli
Armando Rastelli Johannes Kepler University of Linz
Francoise K. LeGoues
Francoise K. LeGoues IBM (United States)
Oliver G. Schmidt
Oliver G. Schmidt Chemnitz University of Technology
H. von Känel
H. von Känel ETH Zurich

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