World's Best Scientists 2026 revealed!

D-Index & Metrics

Materials Science

D-Index
62
Citations
13746
World Ranking
6481
National Ranking
28

G. Bauer publication distribution in Materials Science in 2026

The chart shows the distribution of publications by all Research.com ranked scientists in the field of Materials Science in 2026. The highlighted bar marks where G. Bauer sits on this spectrum.

50–69 publications: 28 scientists 70–89 publications: 152 scientists 90–109 publications: 356 scientists 110–129 publications: 487 scientists 130–149 publications: 723 scientists 150–169 publications: 835 scientists 170–189 publications: 850 scientists 190–209 publications: 891 scientists 210–229 publications: 862 scientists 230–249 publications: 766 scientists 250–269 publications: 726 scientists 270–289 publications: 665 scientists 290–309 publications: 593 scientists 310–329 publications: 537 scientists 330–349 publications: 477 scientists 350–369 publications: 440 scientists 370–389 publications: 356 scientists 390–409 publications: 321 scientists 410–429 publications: 256 scientists 430–449 publications: 246 scientists 450–469 publications: 216 scientists 470–489 publications: 212 scientists 490–509 publications: 174 scientists 510–529 publications: 194 scientists 530–549 publications: 162 scientists 550–569 publications: 131 scientists 570–589 publications: 111 scientists 590–609 publications: 103 scientists 610–629 publications: 99 scientists 630–649 publications: 77 scientists 650–669 publications: 92 scientists 670–689 publications: 56 scientists 690–709 publications: 53 scientists 710–729 publications: 53 scientists 730–749 publications: 38 scientists 750–769 publications: 52 scientists 770–789 publications: 43 scientists 790–809 publications: 38 scientists 810–829 publications: 34 scientists 830–849 publications: 25 scientists 850–869 publications: 18 scientists 870–889 publications: 20 scientists 890–909 publications: 24 scientists 910–929 publications: 27 scientists 930–949 publications: 20 scientists 950–969 publications: 17 scientists 970–989 publications: 10 scientists 990–1,009 publications: 16 scientists 1,010–1,029 publications: 13 scientists 1,030–1,049 publications: 12 scientists 1,050–1,069 publications: 9 scientists 1,070–1,089 publications: 8 scientists 1,090–1,109 publications: 7 scientists 1,110–1,129 publications: 9 scientists 1,130–1,149 publications: 2 scientists 1,150–1,162 publications: 5 scientists 1,163+ publications: 100 scientists
50 publications 1,163+

This scientist: 483 publications — 85th percentile

85% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 1,163 publications or more.

G. Bauer D-index placement in Materials Science in 2026

The chart shows the D-index (discipline H-index) distribution of Materials Science scientists ranked by Research.com in 2026. The highlighted bar marks where G. Bauer sits on this spectrum.

40–41 D-Index: 211 scientists 42–43 D-Index: 450 scientists 44–45 D-Index: 612 scientists 46–47 D-Index: 612 scientists 48–49 D-Index: 598 scientists 50–51 D-Index: 657 scientists 52–53 D-Index: 667 scientists 54–55 D-Index: 621 scientists 56–57 D-Index: 597 scientists 58–59 D-Index: 610 scientists 60–61 D-Index: 587 scientists 62–63 D-Index: 606 scientists 64–65 D-Index: 533 scientists 66–67 D-Index: 490 scientists 68–69 D-Index: 469 scientists 70–71 D-Index: 378 scientists 72–73 D-Index: 421 scientists 74–75 D-Index: 359 scientists 76–77 D-Index: 323 scientists 78–79 D-Index: 299 scientists 80–81 D-Index: 230 scientists 82–83 D-Index: 210 scientists 84–85 D-Index: 195 scientists 86–87 D-Index: 203 scientists 88–89 D-Index: 175 scientists 90–91 D-Index: 175 scientists 92–93 D-Index: 142 scientists 94–95 D-Index: 121 scientists 96–97 D-Index: 117 scientists 98–99 D-Index: 107 scientists 100–101 D-Index: 88 scientists 102–103 D-Index: 85 scientists 104–105 D-Index: 68 scientists 106–107 D-Index: 62 scientists 108–109 D-Index: 57 scientists 110–111 D-Index: 45 scientists 112–113 D-Index: 49 scientists 114–115 D-Index: 50 scientists 116–117 D-Index: 34 scientists 118–119 D-Index: 38 scientists 120–121 D-Index: 37 scientists 122–123 D-Index: 29 scientists 124–125 D-Index: 28 scientists 126–127 D-Index: 24 scientists 128–129 D-Index: 33 scientists 130–131 D-Index: 28 scientists 132–133 D-Index: 21 scientists 134–135 D-Index: 20 scientists 136–137 D-Index: 23 scientists 138–139 D-Index: 17 scientists 140–141 D-Index: 12 scientists 142–143 D-Index: 17 scientists 144–145 D-Index: 21 scientists 146–147 D-Index: 13 scientists 148–149 D-Index: 11 scientists 150–151 D-Index: 14 scientists 152–153 D-Index: 13 scientists 154–155 D-Index: 9 scientists 156–157 D-Index: 10 scientists 158–159 D-Index: 7 scientists 160–161 D-Index: 4 scientists 162–163 D-Index: 4 scientists 164 D-Index: 3 scientists 165+ D-Index: 98 scientists
40 D-Index 165+

This scientist: 62 D-Index — 51st percentile

51% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 165 D-Index or more.

Research.com Recognitions

  • 1990 - Fellow of American Physical Society (APS) Citation For contributions to many aspects of the physics of compound semiconductors
  • Member of the European Academy of Sciences and Arts
  • Member of the European Academy of Sciences and Arts
  • Member of the European Academy of Sciences and Arts
  • Member of the European Academy of Sciences and Arts
  • Member of the European Academy of Sciences and Arts

Overview

G. Bauer is affiliated with Johannes Kepler University of Linz in Austria and has contributed extensively to research in physics and materials science. Their work spans across several interrelated fields, with a focus on atomic and molecular physics, optics, and materials chemistry.

Their research primarily explores topics such as topological materials and phenomena, graphene research and applications, 2D materials and applications, and quantum and electron transport phenomena. Other areas of investigation include the electronic and structural properties of oxides, advanced condensed matter physics, and cold atom physics and Bose-Einstein condensates.

Bauer has co-authored publications with several researchers, frequently collaborating with G. Springholz, Ondřej Caha, Gauthier Krizman, Mahdi Hajlaoui, and Y. Guldner.

They have published numerous papers in notable scientific journals. The prominent venues where their work often appears include:

  • Physical review. B./Physical review. B
  • Advanced Materials
  • Physical Review Letters
  • Advanced Functional Materials
  • Research Square (Research Square)

Among their recent publications are the following notable papers:

  • Mn-Rich MnSb2Te4: A Topological Insulator with Magnetic Gap Closing at High Curie Temperatures of 45-50 K, 2021, Advanced Materials
  • Structure Inversion Asymmetry and Rashba Effect in Quantum Confined Topological Crystalline Insulator Heterostructures, 2021, Advanced Functional Materials
  • Landau level spectroscopy of Bi2Te3, 2020, Physical review. B./Physical review. B
  • Valley-Polarized Quantum Hall Phase in a Strain-Controlled Dirac System, 2024, Physical Review Letters
  • Observation of Weyl and Dirac fermions at smooth topological Volkov-Pankratov heterojunctions, 2023, Physical review. B./Physical review. B

Bauer has received recognition for their contributions to the field, including being named a Fellow of the American Physical Society (APS) in 1990, with a citation for contributions to many aspects of the physics of compound semiconductors.

They are also a member of the European Academy of Sciences and Arts.

Best Publications

  • Structural properties of self-organized semiconductor nanostructures

    J. Stangl;V. Holý;G. Bauer

  • Direct band gap Wurtzite gallium phosphide nanowires

    S Simone Assali;I Ilaria Zardo;SR Sebastien Plissard;D Kriegner

  • Strain Induced Vertical and Lateral Correlations in Quantum Dot Superlattices

    V. Holý;G. Springholz;M. Pinczolits;G. Bauer

  • Au-free epitaxial growth of InAs nanowires.

    Bernhard Mandl;Julian Stangl;Thomas Martensson;Anders Mikkelsen

  • Large magnetic gap at the Dirac point in Bi2Te3/MnBi2Te4 heterostructures.

    E. D. L. Rienks;E. D. L. Rienks;E. D. L. Rienks;S. Wimmer;J. Sanchez-Barriga;Ondřej Caha

  • Nanometer-scale resolution of strain and interdiffusion in self-assembled InAs/GaAs quantum dots

    I. Kegel;T. H. Metzger;A. Lorke;J. Peisl

  • Growth Mechanism of Self-Catalyzed Group III−V Nanowires

    Bernhard Mandl;Julian Stangl;Emelie Hilner;Alexei A. Zakharov

  • Three-dimensional Si/Ge quantum dot crystals.

    Detlev Grützmacher;Thomas Fromherz;Christian Dais;Julian Stangl

  • Instability of the two-dimensional metallic phase to a parallel magnetic field

    V. M. Pudalov;G. Brunthaler;A. Prinz;G. Bauer

  • Determination of strain fields and composition of self-organized quantum dots using x-ray diffraction

    I. Kegel;T. H. Metzger;A. Lorke;J. Peisl

  • Tuning of Vertical and Lateral Correlations in Self-Organized PbSe/Pb 1-x Eu x Te Quantum Dot Superlattices

    G. Springholz;M. Pinczolits;P. Mayer;V. Holy

  • Site-controlled and size-homogeneous Ge islands on prepatterned Si (001) substrates

    Zhenyang Zhong;G. Bauer

  • Unit Cell Structure of Crystal Polytypes in InAs and InSb Nanowires

    Dominik Kriegner;Christian Panse;Bernhard Mandl;Kimberly A. Dick

  • Direct determination of strain and composition profiles in SiGe islands by anomalous x-Ray diffraction at high momentum transfer.

    T. U. Schülli;T. U. Schülli;J. Stangl;Z. Zhong;R. T. Lechner

  • Two-dimensional periodic positioning of self-assembled Ge islands on prepatterned Si (001) substrates

    Zhenyang Zhong;A. Halilovic;T. Fromherz;F. Schäffler

  • Negligible Surface Reactivity of Topological Insulators Bi2Se3 and Bi2Te3 towards Oxygen and Water

    Lada V. Yashina;Jaime Sánchez-Barriga;Markus R. Scholz;Andrey A. Volykhov

  • High-resolution x-ray diffraction from multilayered self-assembled Ge dots

    AA Anton Darhuber;P Schittenhelm;V Holy;J Stangl

  • Controlled aggregation of magnetic ions in a semiconductor: an experimental demonstration.

    A. Bonanni;A. Navarro-Quezada;Tian Li;M. Wegscheider

  • Nonmagnetic band gap at the Dirac point of the magnetic topological insulator (Bi1−xMnx)2Se3

    J. Sánchez-Barriga;A. Varykhalov;G. Springholz;H. Steiner

  • High thermoelectric figure of merit ZT in PbTe and Bi2Te3-based superlattices by a reduction of the thermal conductivity

    H. Beyer;J. Nurnus;H. Böttner;A. Lambrecht

  • Hole energy levels and intersubband absorption in modulation-doped Si/Si 1-x Ge x multiple quantum wells

    T. Fromherz;E. Koppensteiner;M. Helm;G. Bauer

  • Structural properties of self-organized semiconductornanostructures

    Václav Holý;Julian Stangl;Guenther Bauer

Frequent Co-Authors

Julian Stangl
Julian Stangl Johannes Kepler University of Linz
Friedrich Schäffler
Friedrich Schäffler Johannes Kepler University of Linz
Tomasz Dietl
Tomasz Dietl Tohoku University
Oliver G. Schmidt
Oliver G. Schmidt Chemnitz University of Technology
Gerhard Abstreiter
Gerhard Abstreiter Technical University of Munich
Detlev Grützmacher
Detlev Grützmacher Forschungszentrum Jülich
Giovanni Isella
Giovanni Isella Polytechnic University of Milan
H. von Känel
H. von Känel ETH Zurich
Wolfgang Heiss
Wolfgang Heiss University of Erlangen-Nuremberg
Lis K. Nanver
Lis K. Nanver University of Twente

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