2026 Detlev Grützmacher: Materials Science Researcher – H-Index, Publications & Awards

Discipline name	D-Index	World Ranking	Current World Ranking	National Ranking	Current National Ranking	Publications	Citations
Materials Science	61	6732	6505	392	380	573	14389

Discipline name

D-Index

World Ranking

Current World Ranking

National Ranking

Current National Ranking

Publications

Citations

Materials Science

6732

6505

392

380

573

14389

Overview

Detlev Grützmacher is affiliated with Forschungszentrum Jülich in Germany and has an extensive publication record in physics and engineering. Their research spans multiple subfields, including atomic and molecular physics and optics, electrical and electronic engineering, materials chemistry, condensed matter physics, and biomedical engineering.

Their work addresses several advanced topics, with particular focus on:

Topological materials and phenomena
Photonic and optical devices
Quantum and electron transport phenomena
Physics of superconductivity and magnetism
Graphene research and applications
Nanowire synthesis and applications
Advanced condensed matter physics

Grützmacher's publication history includes articles in a diverse array of scientific journals and conferences. They have contributed extensively to arXiv (Cornell University), Physical Review Materials, ECS Meeting Abstracts, Advanced Electronic Materials, and Nanomaterials.

Recent published papers include:

"CMOS-Compatible Bias-Tunable Dual-Band Detector Based on GeSn/Ge/Si Coupled Photodiodes," 2021, ACS Photonics
"Artificial Synapses Based on Ferroelectric Schottky Barrier Field-Effect Transistors for Neuromorphic Applications," 2021, ACS Applied Materials & Interfaces
"Observation of Josephson harmonics in tunnel junctions," 2024, Nature Physics
"Room Temperature Lasing in GeSn Microdisks Enabled by Strain Engineering," 2022, Advanced Optical Materials
"Strain Engineered Electrically Pumped SiGeSn Microring Lasers on Si," 2022, ACS Photonics

Throughout their career, Grützmacher has collaborated frequently with several researchers, including:

Thomas Schäpers
Peter Schüffelgen
Abdur Rehman Jalil
Dan Buca
Gregor Mußler

The scientific contributions of Grützmacher span experimental and theoretical aspects of advanced materials and device physics, often intersecting nano- and optoelectronics with quantum phenomena.

Best Publications

Lasing in direct-bandgap GeSn alloy grown on Si

S. Wirths;R. Geiger;R. Geiger;N. von den Driesch;G. Mussler

1360
Citations
Intersubband electroluminescence from silicon-based quantum cascade structures.

G. Dehlinger;L. Diehl;U. Gennser;H. Sigg

387
Citations
Optically Pumped GeSn Microdisk Lasers on Si

Daniela Stange;Stephan Wirths;Richard Geiger;Christian Schulte-Braucks

261
Citations
Three-dimensional Si/Ge quantum dot crystals.

Detlev Grützmacher;Thomas Fromherz;Christian Dais;Julian Stangl

228
Citations
Ultra-low threshold cw and pulsed lasing in tensile strained GeSn alloys

A. Elbaz;D. Buca;N. Von den Driesch;K. Pantzas

219
Citations
Ultra-low-threshold continuous-wave and pulsed lasing in tensile-strained GeSn alloys

Anas Elbaz;Anas Elbaz;Dan Buca;Nils von den Driesch;Nils von den Driesch;Konstantinos Pantzas

196
Citations
Anomalous coiling of SiGe/Si and SiGe/Si/Cr helical nanobelts.

Li Zhang;Elisabeth Ruh;Detlev Grützmacher;Lixin Dong

195
Citations
Band engineering and growth of tensile strained Ge/(Si)GeSn heterostructures for tunnel field effect transistors

S. Wirths;A. T. Tiedemann;Zoran Ikonic;P. Harrison

190
Citations
Interface and Wetting Layer Effect on the Catalyst‐Free Nucleation and Growth of GaN Nanowires

Toma Stoica;Eli Sutter;Ralph J. Meijers;Ratan K. Debnath

189
Citations
A new technique for fabricating three-dimensional micro- and nanostructures of various shapes

V Ya Prinz;V Ya Prinz;D Grützmacher;A Beyer;C David

176
Citations
Room-temperature high-frequency transport of dirac fermions in epitaxially grown Sb2Te3- and Bi2Te3-based topological insulators.

P. Olbrich;L. E. Golub;T. Herrmann;S. N. Danilov

175
Citations
Fabrication and characterization of three-dimensional InGaAs/GaAs nanosprings.

Dominik J. Bell;Lixin Dong;Bradley J. Nelson;Matthias Golling

172
Citations
Direct Bandgap Group IV Epitaxy on Si for Laser Applications

N. von den Driesch;D. Stange;S. Wirths;G. Mussler

166
Citations
Controllable fabrication of SiGe/Si and SiGe/Si/Cr helical nanobelts

L Zhang;E Deckhardt;A Weber;C Schönenberger

153
Citations
Three-dimensional nanosprings for electromechanical sensors

D.J. Bell;Y. Sun;L. Zhang;L.X. Dong

141
Citations
Electroluminescence from strain-compensated Si0.2Ge0.8/Si quantum-cascade structures based on a bound-to-continuum transition

L. Diehl;S. Menteşe;E. Müller;D. Grützmacher

136
Citations
MBE growth optimization of topological insulator Bi2Te3 films

J. Krumrain;Gregor Mussler;Svetlana Borisova;Toma Stoica

132
Citations
Hall effect measurements on InAs nanowires

Ch. Blömers;T. Grap;M. I. Lepsa;J. Moers

128
Citations
Interface-roughness-induced broadening of intersubband electroluminescence in p-SiGe and n-GaInAs∕AlInAs quantum-cascade structures

S. Tsujino;A. Borak;E. Müller;M. Scheinert

123
Citations
Spin-orbit coupling and phase coherence in InAs nanowires

S. Estevez Hernandez;M. Akabori;K. Sladek;Ch. Volk

123
Citations