World's Best Scientists 2026 revealed!

D-Index & Metrics

Electronics and Electrical Engineering

D-Index
45
Citations
8337
World Ranking
3543
National Ranking
104

Giovanni Isella publication distribution in Electronics and Electrical Engineering in 2026

The chart shows the distribution of publications by all Research.com ranked scientists in the field of Electronics and Electrical Engineering in 2026. The highlighted bar marks where Giovanni Isella sits on this spectrum.

34–53 publications: 24 scientists 54–73 publications: 52 scientists 74–93 publications: 114 scientists 94–113 publications: 203 scientists 114–133 publications: 269 scientists 134–153 publications: 355 scientists 154–173 publications: 403 scientists 174–193 publications: 445 scientists 194–213 publications: 430 scientists 214–233 publications: 431 scientists 234–253 publications: 399 scientists 254–273 publications: 366 scientists 274–293 publications: 335 scientists 294–313 publications: 300 scientists 314–333 publications: 276 scientists 334–353 publications: 250 scientists 354–373 publications: 214 scientists 374–393 publications: 187 scientists 394–413 publications: 152 scientists 414–433 publications: 169 scientists 434–453 publications: 147 scientists 454–473 publications: 111 scientists 474–493 publications: 117 scientists 494–513 publications: 103 scientists 514–533 publications: 99 scientists 534–553 publications: 92 scientists 554–573 publications: 75 scientists 574–593 publications: 58 scientists 594–613 publications: 69 scientists 614–633 publications: 50 scientists 634–653 publications: 62 scientists 654–673 publications: 54 scientists 674–693 publications: 44 scientists 694–713 publications: 37 scientists 714–733 publications: 28 scientists 734–753 publications: 26 scientists 754–773 publications: 26 scientists 774–793 publications: 19 scientists 794–813 publications: 23 scientists 814–833 publications: 20 scientists 834–853 publications: 16 scientists 854–873 publications: 20 scientists 874–893 publications: 11 scientists 894–913 publications: 11 scientists 914–933 publications: 16 scientists 934–953 publications: 13 scientists 954–973 publications: 10 scientists 974–993 publications: 11 scientists 994–1,013 publications: 9 scientists 1,014–1,033 publications: 9 scientists 1,034–1,053 publications: 10 scientists 1,054–1,064 publications: 6 scientists 1,065+ publications: 99 scientists
34 publications 1,065+

This scientist: 508 publications — 85th percentile

85% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 1,065 publications or more.

Giovanni Isella D-index placement in Electronics and Electrical Engineering in 2026

The chart shows the D-index (discipline H-index) distribution of Electronics and Electrical Engineering scientists ranked by Research.com in 2026. The highlighted bar marks where Giovanni Isella sits on this spectrum.

30 D-Index: 178 scientists 31 D-Index: 257 scientists 32 D-Index: 263 scientists 33 D-Index: 262 scientists 34 D-Index: 244 scientists 35 D-Index: 236 scientists 36 D-Index: 211 scientists 37 D-Index: 220 scientists 38 D-Index: 214 scientists 39 D-Index: 214 scientists 40 D-Index: 205 scientists 41 D-Index: 187 scientists 42 D-Index: 194 scientists 43 D-Index: 201 scientists 44 D-Index: 155 scientists 45 D-Index: 189 scientists 46 D-Index: 148 scientists 47 D-Index: 160 scientists 48 D-Index: 134 scientists 49 D-Index: 130 scientists 50 D-Index: 141 scientists 51 D-Index: 156 scientists 52 D-Index: 108 scientists 53 D-Index: 130 scientists 54 D-Index: 112 scientists 55 D-Index: 97 scientists 56 D-Index: 111 scientists 57 D-Index: 102 scientists 58 D-Index: 108 scientists 59 D-Index: 120 scientists 60 D-Index: 103 scientists 61 D-Index: 93 scientists 62 D-Index: 92 scientists 63 D-Index: 74 scientists 64 D-Index: 77 scientists 65 D-Index: 73 scientists 66 D-Index: 64 scientists 67 D-Index: 69 scientists 68 D-Index: 60 scientists 69 D-Index: 39 scientists 70 D-Index: 57 scientists 71 D-Index: 59 scientists 72 D-Index: 46 scientists 73 D-Index: 49 scientists 74 D-Index: 38 scientists 75 D-Index: 35 scientists 76 D-Index: 32 scientists 77 D-Index: 35 scientists 78 D-Index: 31 scientists 79 D-Index: 22 scientists 80 D-Index: 34 scientists 81 D-Index: 31 scientists 82 D-Index: 34 scientists 83 D-Index: 23 scientists 84 D-Index: 18 scientists 85 D-Index: 30 scientists 86 D-Index: 19 scientists 87 D-Index: 19 scientists 88 D-Index: 20 scientists 89 D-Index: 8 scientists 90 D-Index: 17 scientists 91 D-Index: 7 scientists 92 D-Index: 14 scientists 93 D-Index: 9 scientists 94 D-Index: 15 scientists 95 D-Index: 10 scientists 96 D-Index: 12 scientists 97 D-Index: 10 scientists 98 D-Index: 10 scientists 99 D-Index: 12 scientists 100 D-Index: 16 scientists 101 D-Index: 5 scientists 102 D-Index: 7 scientists 103 D-Index: 7 scientists 104 D-Index: 8 scientists 105 D-Index: 9 scientists 106 D-Index: 13 scientists 107 D-Index: 4 scientists 108 D-Index: 5 scientists 109 D-Index: 10 scientists 110 D-Index: 8 scientists 111+ D-Index: 96 scientists
30 D-Index 111+

This scientist: 45 D-Index — 50th percentile

50% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 111 D-Index or more.

Overview

Giovanni Isella is affiliated with the Polytechnic University of Milan in Italy. Their research spans multiple interdisciplinary areas primarily within engineering and physics, focusing on cutting-edge developments in photonics, semiconductor devices, and quantum transport phenomena.

The scientist's publication record includes significant papers such as:

  • On-Chip Mid-Infrared Supercontinuum Generation from 3 to 13 μm Wavelength (2020, ACS Photonics)
  • CMOS-Compatible Bias-Tunable Dual-Band Detector Based on GeSn/Ge/Si Coupled Photodiodes (2021, ACS Photonics)
  • Solid-State Dewetting Dynamics of Amorphous Ge Thin Films on Silicon Dioxide Substrates (2020, Nanomaterials)
  • Observation of Large Unidirectional Rashba Magnetoresistance in Ge(111) (2020, Physical Review Letters)
  • Parity-conserving Cooper-pair transport and ideal superconducting diode in planar germanium (2024, Nature Communications)

Frequent coauthors collaborating with Giovanni Isella include:

  • Jacopo Frigerio
  • Andrea Ballabio
  • Stefano Calcaterra
  • Delphine Marris-Morini
  • Laurent Vivien

Their work is often published in venues related to advanced photonics and physics, such as:

  • arXiv (Cornell University)
  • Nature Communications
  • Optics Express
  • ECS Meeting Abstracts
  • ACS Photonics

Giovanni Isella's research contributions cover diverse fields, mainly:

  • Engineering
  • Physics and Astronomy

Within these broader fields, their subfields of study comprise:

  • Electrical and Electronic Engineering
  • Atomic and Molecular Physics, and Optics
  • Materials Chemistry
  • Artificial Intelligence
  • Biomedical Engineering

The principal topics of their scientific work include:

  • Photonic and Optical Devices
  • Quantum and electron transport phenomena
  • Advanced Fiber Laser Technologies
  • Silicon Nanostructures and Photoluminescence
  • Semiconductor Quantum Structures and Devices
  • Photonic Crystals and Applications
  • Quantum Information and Cryptography

Best Publications

  • Analysis of enhanced light emission from highly strained germanium microbridges

    M. J. Süess;M. J. Süess;R. Geiger;R. A. Minamisawa;G. Schiefler;G. Schiefler

  • Integrated germanium optical interconnects on silicon substrates

    Papichaya Chaisakul;Delphine Marris-Morini;Jacopo Frigerio;Daniel Chrastina

  • Midinfrared Plasmon-Enhanced Spectroscopy with Germanium Antennas on Silicon Substrates

    Leonetta Baldassarre;Emilie Georgette Simone Mirna Sakat;Jacopo Frigerio;Antonio Samarelli

  • Low-energy plasma-enhanced chemical vapor deposition for strained Si and Ge heterostructures and devices

    G. Isella;D. Chrastina;B. Rössner;T. Hackbarth

  • Scaling Hetero-Epitaxy from Layers to Three-Dimensional Crystals

    Claudiu V. Falub;Hans von Känel;Fabio Isa;Roberto Bergamaschini

  • Germanium-based integrated photonics from near- to mid-infrared applications

    Delphine Marris-Morini;Vladyslav Vakarin;Joan Manel Ramírez;Qiankun Liu

  • 23 GHz Ge/SiGe multiple quantum well electro-absorption modulator.

    Papichaya Chaisakul;Delphine Marris-Morini;Mohamed-Saïd Rouifed;Giovanni Isella

  • A singlet-triplet hole spin qubit in planar Ge

    Daniel Jirovec;Andrea Hofmann;Andrea Ballabio;Philipp M. Mutter

  • Direct-gap gain and optical absorption in germanium correlated to the density of photoexcited carriers, doping, and strain.

    Lee Carroll;Peter Friedli;Stefan Neuenschwander;Hans Sigg

  • Ultralow dark current Ge/Si(100) photodiodes with low thermal budget

    J. Osmond;G. Isella;D. Chrastina;R. Kaufmann

  • Graded SiGe waveguides with broadband low-loss propagation in the mid infrared.

    J. M. Ramirez;Q. Liu;V. Vakarin;J. Frigerio

  • Tunability of the dielectric function of heavily doped germanium thin films for mid-infrared plasmonics

    Jacopo Frigerio;Andrea Ballabio;Giovanni Isella;Emilie Georgette Simone Mirna Sakat

  • Very high hole mobilities in modulation-doped Ge quantum wells grown by low-energy plasma enhanced chemical vapor deposition

    Hans von Känel;Matthias Kummer;Giovanni Isella;Elisabeth Müller

  • Optical spin injection and spin lifetime in Ge heterostructures

    Fabio Pezzoli;Federico Bottegoni;Dhara Trivedi;Franco Ciccacci

  • Scattering mechanisms in high-mobility strained Ge channels

    B. Rössner;D. Chrastina;G. Isella;H. von Känel

  • Raman spectroscopy determination of composition and strain in Si1-xGex/Si heterostructures

    F. Pezzoli;E. Bonera;E. Grilli;M. Guzzi

  • Optical transitions in Ge/SiGe multiple quantum wells with Ge-rich barriers

    M. Bonfanti;E. Grilli;M. Guzzi;M. Virgilio

  • Excess carrier lifetimes in Ge layers on Si

    R. Geiger;J. Frigerio;M.J. Süess;D. Chrastina

  • The thermoelectric properties of Ge/SiGe modulation doped superlattices

    A. Samarelli;L. Ferre Llin;S. Cecchi;J. Frigerio

  • Ultrafast nonlinear optical response of photoexcited Ge/SiGe quantum wells: Evidence for a femtosecond transient population inversion

    C. Lange;N. S. Köster;S. Chatterjee;H. Sigg

  • Strain relaxation of GaAs/Ge crystals on patterned Si substrates

    A. G. Taboada;T. Kreiliger;C. V. Falub;F. Isa

Frequent Co-Authors

Laurent Vivien
Laurent Vivien University of Paris-Saclay
Delphine Marris-Morini
Delphine Marris-Morini University of Paris-Saclay
H. von Känel
H. von Känel ETH Zurich
Douglas J. Paul
Douglas J. Paul University of Glasgow
Xavier Le Roux
Xavier Le Roux Claude Bernard University Lyon 1
Antonia Neels
Antonia Neels Swiss Federal Laboratories for Materials Science and Technology
Hans Sigg
Hans Sigg Paul Scherrer Institute
Julian Stangl
Julian Stangl Johannes Kepler University of Linz
Eric Cassan
Eric Cassan University of Paris-Saclay
Alfred Leitenstorfer
Alfred Leitenstorfer University of Konstanz

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