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Krishna C. Saraswat

Krishna C. Saraswat

Stanford University
United States

Last Updated:

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Electronics and Electrical Engineering
USA
2026

D-Index & Metrics

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Discipline name D-Index World Ranking Current World Ranking National Ranking Current National Ranking Publications Citations
Electronics and Electrical Engineering 105 143 138 69 64 742 37876
Materials Science 104 888 846 295 270 725 36900

Krishna C. Saraswat publications per year

The chart shows the history of publications by Krishna C. Saraswat between 1969 and 2025, highlighting the no. of papers published in each year and offering an overview of the publication velocity of this scholar. Krishna C. Saraswat published across 57 years, from 1969 to 2025, averaging 13.7 papers a year. Output peaked at 37 publications in 2008. 20 of the 783 publications appeared in the last two years.

No. of publications
10 20 30
Bar chart. Horizontal axis: year, 1969 to 2025. Vertical axis: number of publications, 0 to 37. Peak 37 publications in 2008. 1969: 1 publication 1970: 0 publications 1971: 0 publications 1972: 0 publications 1973: 0 publications 1974: 1 publication 1975: 2 publications 1976: 1 publication 1977: 3 publications 1978: 4 publications 1979: 6 publications 1980: 9 publications 1981: 6 publications 1982: 4 publications 1983: 4 publications 1984: 11 publications 1985: 20 publications 1986: 11 publications 1987: 13 publications 1988: 11 publications 1989: 11 publications 1990: 15 publications 1991: 23 publications 1992: 11 publications 1993: 17 publications 1994: 21 publications 1995: 13 publications 1996: 16 publications 1997: 18 publications 1998: 14 publications 1999: 10 publications 2000: 12 publications 2001: 11 publications 2002: 17 publications 2003: 23 publications 2004: 20 publications 2005: 20 publications 2006: 34 publications 2007: 31 publications 2008: 37 publications 2009: 32 publications 2010: 27 publications 2011: 36 publications 2012: 31 publications 2013: 27 publications 2014: 21 publications 2015: 19 publications 2016: 19 publications 2017: 15 publications 2018: 8 publications 2019: 8 publications 2020: 8 publications 2021: 9 publications 2022: 13 publications 2023: 9 publications 2024: 14 publications 2025: 6 publications
1969 2025

783 publications in total across all disciplines

View publications per year as a table
Krishna C. Saraswat: publications per year, 1969 to 2025
Year Publications
1969 1
1970 0
1971 0
1972 0
1973 0
1974 1
1975 2
1976 1
1977 3
1978 4
1979 6
1980 9
1981 6
1982 4
1983 4
1984 11
1985 20
1986 11
1987 13
1988 11
1989 11
1990 15
1991 23
1992 11
1993 17
1994 21
1995 13
1996 16
1997 18
1998 14
1999 10
2000 12
2001 11
2002 17
2003 23
2004 20
2005 20
2006 34
2007 31
2008 37
2009 32
2010 27
2011 36
2012 31
2013 27
2014 21
2015 19
2016 19
2017 15
2018 8
2019 8
2020 8
2021 9
2022 13
2023 9
2024 14
2025 6
Total 783
Download as CSV

Krishna C. Saraswat publications per year - data summary

  • Krishna C. Saraswat, a Electronics and Electrical Engineering scholar from Stanford University, has 783 publications recorded across 57 years, from 1969 to 2025.
  • The oldest publication on record dates to 1969 and the most recent to 2025.
  • The most productive year is 2008, with 37 publications.
  • The least productive years with any output are 1969, 1974 and 1976, with 1 publication each.
  • 4 of the 57 years in the span carry no publications at all (1970, 1971, 1972 and 1973).
  • The rate of publication averages 13.7 papers per year over the whole span, or 14.8 per year counting only the 53 years with at least one publication.
  • The last 5 years on the chart (2021-2025) hold 51 publications, 7% of the career total.
  • Split into equal eras - 1969-1987: 96 publications (5.1 per year); 1988-2006: 317 publications (16.7 per year); 2007-2025: 370 publications (19.5 per year).
  • Comparing the opening and closing eras, the overall trend of publication is rising.

Krishna C. Saraswat publication distribution in Electronics and Electrical Engineering in 2026

The chart shows the distribution of publications by all Research.com ranked scientists in the field of Electronics and Electrical Engineering in 2026. The highlighted bar marks where Krishna C. Saraswat sits on this spectrum.

No. of scientists
100 200 300 400
Bar chart with 53 bars. Horizontal axis: publications, 34–53 to 1,065+. Vertical axis: number of scientists, 0 to 445. Most scientists, 445, have 174–193 publications. The last bar groups every scientist with 1,065 publications or more. The highlighted bar, 734–753 publications, is where this scientist sits. 34–53 publications: 24 scientists 54–73 publications: 52 scientists 74–93 publications: 114 scientists 94–113 publications: 203 scientists 114–133 publications: 269 scientists 134–153 publications: 355 scientists 154–173 publications: 403 scientists 174–193 publications: 445 scientists 194–213 publications: 430 scientists 214–233 publications: 431 scientists 234–253 publications: 399 scientists 254–273 publications: 366 scientists 274–293 publications: 335 scientists 294–313 publications: 300 scientists 314–333 publications: 276 scientists 334–353 publications: 250 scientists 354–373 publications: 214 scientists 374–393 publications: 187 scientists 394–413 publications: 152 scientists 414–433 publications: 169 scientists 434–453 publications: 147 scientists 454–473 publications: 111 scientists 474–493 publications: 117 scientists 494–513 publications: 103 scientists 514–533 publications: 99 scientists 534–553 publications: 92 scientists 554–573 publications: 75 scientists 574–593 publications: 58 scientists 594–613 publications: 69 scientists 614–633 publications: 50 scientists 634–653 publications: 62 scientists 654–673 publications: 54 scientists 674–693 publications: 44 scientists 694–713 publications: 37 scientists 714–733 publications: 28 scientists 734–753 publications: 26 scientists 754–773 publications: 26 scientists 774–793 publications: 19 scientists 794–813 publications: 23 scientists 814–833 publications: 20 scientists 834–853 publications: 16 scientists 854–873 publications: 20 scientists 874–893 publications: 11 scientists 894–913 publications: 11 scientists 914–933 publications: 16 scientists 934–953 publications: 13 scientists 954–973 publications: 10 scientists 974–993 publications: 11 scientists 994–1,013 publications: 9 scientists 1,014–1,033 publications: 9 scientists 1,034–1,053 publications: 10 scientists 1,054–1,064 publications: 6 scientists 1,065+ publications: 99 scientists
34–53 publications 1,065+

This scientist: 742 publications — 95th percentile

95% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 1,065 publications or more.

View publications distribution as a table
Number of Electronics and Electrical Engineering scientists by publication count, Research.com 2026 ranking edition. Based on 6,875 ranked scientists.
Publications Scientists This scientist
34–53 24
54–73 52
74–93 114
94–113 203
114–133 269
134–153 355
154–173 403
174–193 445
194–213 430
214–233 431
234–253 399
254–273 366
274–293 335
294–313 300
314–333 276
334–353 250
354–373 214
374–393 187
394–413 152
414–433 169
434–453 147
454–473 111
474–493 117
494–513 103
514–533 99
534–553 92
554–573 75
574–593 58
594–613 69
614–633 50
634–653 62
654–673 54
674–693 44
694–713 37
714–733 28
734–753 26 742
754–773 26
774–793 19
794–813 23
814–833 20
834–853 16
854–873 20
874–893 11
894–913 11
914–933 16
934–953 13
954–973 10
974–993 11
994–1,013 9
1,014–1,033 9
1,034–1,053 10
1,054–1,064 6
1,065+ 99
Download as CSV

Krishna C. Saraswat publication distribution in Electronics and Electrical Engineering in 2026 - data summary

  • The chart plots the publication count of all 6,875 Electronics and Electrical Engineering scientists ranked by Research.com in 2026, grouped into 53 ranges running from 34–53 to 1,065+ publications.
  • Krishna C. Saraswat, a Electronics and Electrical Engineering scholar from Stanford University, records 742 publications - the 95th percentile of the discipline.
  • 95% of ranked Electronics and Electrical Engineering scientists score the same or lower than Krishna C. Saraswat, and about 5% score higher.
  • The median of the discipline falls in the 254–273 publications range, and Krishna C. Saraswat ranks above the median.
  • The most crowded range is 174–193 publications, holding 445 scientists (6% of the field).
  • 60% of the field sits in the lowest quarter of the value range (up to 294–313 publications), so the distribution is heavily right-skewed and high scores are rare.
  • The final bar has no upper bound: it groups every scientist with 1,065 publications or more, 99 scientists in all (1% of the field).

Krishna C. Saraswat D-index placement in Electronics and Electrical Engineering in 2026

The chart shows the D-index (discipline H-index) distribution of Electronics and Electrical Engineering scientists ranked by Research.com in 2026. The highlighted bar marks where Krishna C. Saraswat sits on this spectrum.

No. of scientists
50 100 150 200 250
Bar chart with 82 bars. Horizontal axis: D-Index, 30 to 111+. Vertical axis: number of scientists, 0 to 263. Most scientists, 263, have 32 D-Index. The last bar groups every scientist with 111 D-Index or more. The highlighted bar, 105 D-Index, is where this scientist sits. 30 D-Index: 178 scientists 31 D-Index: 257 scientists 32 D-Index: 263 scientists 33 D-Index: 262 scientists 34 D-Index: 244 scientists 35 D-Index: 236 scientists 36 D-Index: 211 scientists 37 D-Index: 220 scientists 38 D-Index: 214 scientists 39 D-Index: 214 scientists 40 D-Index: 205 scientists 41 D-Index: 187 scientists 42 D-Index: 194 scientists 43 D-Index: 201 scientists 44 D-Index: 155 scientists 45 D-Index: 189 scientists 46 D-Index: 148 scientists 47 D-Index: 160 scientists 48 D-Index: 134 scientists 49 D-Index: 130 scientists 50 D-Index: 141 scientists 51 D-Index: 156 scientists 52 D-Index: 108 scientists 53 D-Index: 130 scientists 54 D-Index: 112 scientists 55 D-Index: 97 scientists 56 D-Index: 111 scientists 57 D-Index: 102 scientists 58 D-Index: 108 scientists 59 D-Index: 120 scientists 60 D-Index: 103 scientists 61 D-Index: 93 scientists 62 D-Index: 92 scientists 63 D-Index: 74 scientists 64 D-Index: 77 scientists 65 D-Index: 73 scientists 66 D-Index: 64 scientists 67 D-Index: 69 scientists 68 D-Index: 60 scientists 69 D-Index: 39 scientists 70 D-Index: 57 scientists 71 D-Index: 59 scientists 72 D-Index: 46 scientists 73 D-Index: 49 scientists 74 D-Index: 38 scientists 75 D-Index: 35 scientists 76 D-Index: 32 scientists 77 D-Index: 35 scientists 78 D-Index: 31 scientists 79 D-Index: 22 scientists 80 D-Index: 34 scientists 81 D-Index: 31 scientists 82 D-Index: 34 scientists 83 D-Index: 23 scientists 84 D-Index: 18 scientists 85 D-Index: 30 scientists 86 D-Index: 19 scientists 87 D-Index: 19 scientists 88 D-Index: 20 scientists 89 D-Index: 8 scientists 90 D-Index: 17 scientists 91 D-Index: 7 scientists 92 D-Index: 14 scientists 93 D-Index: 9 scientists 94 D-Index: 15 scientists 95 D-Index: 10 scientists 96 D-Index: 12 scientists 97 D-Index: 10 scientists 98 D-Index: 10 scientists 99 D-Index: 12 scientists 100 D-Index: 16 scientists 101 D-Index: 5 scientists 102 D-Index: 7 scientists 103 D-Index: 7 scientists 104 D-Index: 8 scientists 105 D-Index: 9 scientists 106 D-Index: 13 scientists 107 D-Index: 4 scientists 108 D-Index: 5 scientists 109 D-Index: 10 scientists 110 D-Index: 8 scientists 111+ D-Index: 96 scientists
30 D-Index 111+

This scientist: 105 D-Index — 98th percentile

98% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 111 D-Index or more.

View D-Index distribution as a table
Number of Electronics and Electrical Engineering scientists by D-index, Research.com 2026 ranking edition. Based on 6,875 ranked scientists.
D-Index Scientists This scientist
30 178
31 257
32 263
33 262
34 244
35 236
36 211
37 220
38 214
39 214
40 205
41 187
42 194
43 201
44 155
45 189
46 148
47 160
48 134
49 130
50 141
51 156
52 108
53 130
54 112
55 97
56 111
57 102
58 108
59 120
60 103
61 93
62 92
63 74
64 77
65 73
66 64
67 69
68 60
69 39
70 57
71 59
72 46
73 49
74 38
75 35
76 32
77 35
78 31
79 22
80 34
81 31
82 34
83 23
84 18
85 30
86 19
87 19
88 20
89 8
90 17
91 7
92 14
93 9
94 15
95 10
96 12
97 10
98 10
99 12
100 16
101 5
102 7
103 7
104 8
105 9 105
106 13
107 4
108 5
109 10
110 8
111+ 96
Download as CSV

Krishna C. Saraswat D-index placement in Electronics and Electrical Engineering in 2026 - data summary

  • The chart plots the discipline H-index (D-index) of all 6,875 Electronics and Electrical Engineering scientists ranked by Research.com in 2026, grouped into 82 ranges running from 30 to 111+ D-Index.
  • Krishna C. Saraswat, a Electronics and Electrical Engineering scholar from Stanford University, records 105 D-Index - the 98th percentile of the discipline.
  • 98% of ranked Electronics and Electrical Engineering scientists score the same or lower than Krishna C. Saraswat, and about 2% score higher.
  • The median of the discipline falls in the 46 D-Index range, and Krishna C. Saraswat ranks above the median.
  • The most crowded range is 32 D-Index, holding 263 scientists (4% of the field).
  • 60% of the field sits in the lowest quarter of the value range (up to 50 D-Index), so the distribution is heavily right-skewed and high scores are rare.
  • The final bar has no upper bound: it groups every scientist with 111 D-Index or more, 96 scientists in all (1% of the field).

Research.com Recognitions

  • 2026 - Research.com Electronics and Electrical Engineering in United States Leader Award
  • 2025 - Research.com Electronics and Electrical Engineering in United States Leader Award
  • 2012 - Semiconductor Industry Association University Researcher Award
  • 1989 - IEEE Fellow For contributions to metallization and interconnects for VLSI.

Overview

Krishna C. Saraswat is affiliated with Stanford University in the United States. Their research primarily centers on engineering and materials science, with significant contributions to electrical and electronic engineering as well as materials chemistry.

Their scholarly output includes work in the subfields of atomic and molecular physics and optics, biomedical engineering, and polymers and plastics. These areas support a broad engagement with semiconductor materials and devices, 2D materials and applications, and advanced memory and neural computing.

Key topics in Saraswat's research consist of:

  • 2D Materials and Applications
  • Semiconductor materials and devices
  • Chalcogenide Semiconductor Thin Films
  • Advanced Memory and Neural Computing
  • Semiconductor materials and interfaces
  • Perovskite Materials and Applications
  • Quantum Dots Synthesis And Properties

The scientist's most frequent coauthors include Eric Pop, Marc Jaikissoon, Aravindh Kumar, Kathryn M. Neilson, and Koosha Nassiri Nazif. Publication venues where Saraswat's work is regularly featured include arXiv (Cornell University), Nano Letters, ACS Nano, ECS Meeting Abstracts, and Nature Communications.

Recent publications illustrate a diverse focus on novel materials and device physics:

  • "High-specific-power flexible transition metal dichalcogenide solar cells," 2021, Nature Communications
  • "Fast-Response Flexible Temperature Sensors with Atomically Thin Molybdenum Disulfide," 2022, Nano Letters
  • "Free-standing 2.7 μm thick ultrathin crystalline silicon solar cell with efficiency above 12.0%," 2020, Nano Energy
  • "High-Performance p-n Junction Transition Metal Dichalcogenide Photovoltaic Cells Enabled by MoOx Doping and Passivation," 2021, Nano Letters
  • "High-Efficiency WSe2 Photovoltaic Devices with Electron-Selective Contacts," 2022, ACS Nano

Among recognitions, Krishna C. Saraswat has received the Semiconductor Industry Association University Researcher Award in 2012. Saraswat was also named an IEEE Fellow in 1989 for contributions to metallization and interconnects for VLSI.

Best Publications

  • 3-D ICs: a novel chip design for improving deep-submicrometer interconnect performance and systems-on-chip integration

    K. Banerjee;S.J. Souri;P. Kapur;K.C. Saraswat

  • Effect of Scaling of Interconnections on the Time Delay of VLSI Circuits

    K.C. Saraswat;F. Mohammadi

  • Interconnect limits on gigascale integration (GSI) in the 21st century

    J.A. Davis;R. Venkatesan;A. Kaloyeros;M. Beylansky

  • Nanometre-scale germanium photodetector enhanced by a near-infrared dipole antenna

    Liang Tang;Sukru Ekin Kocabas;Salman Latif;Ali K. Okyay

  • Three-dimensional integration of nanotechnologies for computing and data storage on a single chip

    Max M. Shulaker;Max M. Shulaker;Gage Hills;Rebecca S. Park;Roger T. Howe

  • Double-Gate Strained-Ge Heterostructure Tunneling FET (TFET) With record high drive currents and ≪60mV/dec subthreshold slope

    T. Krishnamohan;Donghyun Kim;S. Raghunathan;K. Saraswat

  • Germanium nanowire field-effect transistors with SiO2 and high-κ HfO2 gate dielectrics

    Dunwei Wang;Qian Wang;Ali Javey;Ryan Tu

  • Improved Contacts to MoS2 Transistors by Ultra-High Vacuum Metal Deposition

    Chris D. English;Gautam Shine;Vincent E. Dorgan;Krishna C. Saraswat

  • Achieving direct band gap in germanium through integration of Sn alloying and external strain

    Suyog Gupta;Blanka Magyari-Köpe;Yoshio Nishi;Krishna C. Saraswat

  • Dopant segregation in polycrystalline silicon

    Mohammad M. Mandurah;Krishna C. Saraswat;C. Robert Helms;Theodore I. Kamins

  • Two-dimensional thermal oxidation of silicon. II. Modeling stress effects in wet oxides

    D.-B. Kao;J.P. McVittie;W.D. Nix;K.C. Saraswat

  • On the Correct Extraction of Interface Trap Density of MOS Devices With High-Mobility Semiconductor Substrates

    K. Martens;Chi On Chui;G. Brammertz;B. De Jaeger

  • Germanium MOS capacitors incorporating ultrathin high-/spl kappa/ gate dielectric

    Chi On Chui;S. Ramanathan;B.B. Triplett;P.C. McIntyre

  • Improved Contacts to MoS2 Field-Effect Transistors by Ultra-High Vacuum Metal Deposition

    Chris D. English;Gautam Shine;Vincent E. Dorgan;Krishna C. Saraswat

  • Effects of crystallization on the electrical properties of ultrathin HfO2 dielectrics grown by atomic layer deposition

    Hyoungsub Kim;Paul C. McIntyre;Krishna C. Saraswat

  • Two-dimensional thermal oxidation of silicon—I. Experiments

    Dah-Bin Kao;J.P. McVittie;W.D. Nix;K.C. Saraswat

  • A sub-400/spl deg/C germanium MOSFET technology with high-/spl kappa/ dielectric and metal gate

    Chi On Chui;Hyoungsub Kim;D. Chi;B.B. Triplett

  • Technology and reliability constrained future copper interconnects. I. Resistance modeling

    P. Kapur;J.P. McVittie;K.C. Saraswat

  • The effect of fluorine in silicon dioxide gate dielectrics

    P.J. Wright;K.C. Saraswat

  • Low-leakage germanium-seeded laterally-crystallized single-grain 100-nm TFTs for vertical integration applications

    V. Subramanian;M. Toita;N.R. Ibrahim;S.J. Souri

Frequent Co-Authors

Yoshio Nishi
Yoshio Nishi Stanford University
Paul C. McIntyre
Paul C. McIntyre Stanford University
Chi On Chui
Chi On Chui University of California, Los Angeles
Theodore I. Kamins
Theodore I. Kamins Stanford University
James D. Meindl
James D. Meindl Georgia Institute of Technology
Hyoungsub Kim
Hyoungsub Kim Sungkyunkwan University
James S. Harris
James S. Harris Stanford University
Butrus T. Khuri-Yakub
Butrus T. Khuri-Yakub Stanford University
Duygu Kuzum
Duygu Kuzum University of California, San Diego
Mark L. Brongersma
Mark L. Brongersma Stanford University

External Links

Personal website of Krishna C. Saraswat Google Scholar page

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Related Online Degrees & Career Pathways

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For those looking to combine technical expertise with leadership skills, pursuing one of the fastest online project management degree programs can complement an engineering background. This blend can open doors to managing complex projects within the electronics sector efficiently and effectively.

Best Scientists Citing Krishna C. Saraswat

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Publications: 114

Paul C. McIntyre

Paul C. McIntyre

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Publications: 97

Yee-Chia Yeo

Yee-Chia Yeo

National University of Singapore

Publications: 84

Mitsuru Takenaka

Mitsuru Takenaka

University of Tokyo

Publications: 81

Eddy Simoen

Eddy Simoen

Ghent University

Publications: 77

Sanjay K. Banerjee

Sanjay K. Banerjee

The University of Texas at Austin

Publications: 69

Nitin K. Ingle

Nitin K. Ingle

Applied Materials (United States)

Publications: 69

Matty Caymax

Matty Caymax

Imec

Publications: 64

Marc Meuris

Marc Meuris

Hasselt University

Publications: 61

Dim-Lee Kwong

Dim-Lee Kwong

National University of Singapore

Publications: 58

Genquan Han

Genquan Han

Xidian University

Publications: 53

Robert M. Wallace

Robert M. Wallace

The University of Texas at Dallas

Publications: 52

Theodore I. Kamins

Theodore I. Kamins

Stanford University

Publications: 52

Leonard Forbes

Leonard Forbes

L. Forbes and Associates LLC

Publications: 52

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Kie Y. Ahn

Micron (United States)

Publications: 51

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Kaustav Banerjee

University of California, Santa Barbara

Publications: 48

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