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Krishna C. Saraswat

Krishna C. Saraswat

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Electronics and Electrical Engineering
USA
2026

D-Index & Metrics

Electronics and Electrical Engineering

D-Index
105
Citations
37876
World Ranking
143
National Ranking
69

Materials Science

D-Index
104
Citations
36900
World Ranking
888
National Ranking
296

Research.com Recognitions

  • 2026 - Research.com Electronics and Electrical Engineering in United States Leader Award
  • 2025 - Research.com Electronics and Electrical Engineering in United States Leader Award
  • 2012 - Semiconductor Industry Association University Researcher Award
  • 1989 - IEEE Fellow For contributions to metallization and interconnects for VLSI.

Overview

Krishna C. Saraswat is affiliated with Stanford University in the United States. Their research primarily centers on engineering and materials science, with significant contributions to electrical and electronic engineering as well as materials chemistry.

Their scholarly output includes work in the subfields of atomic and molecular physics and optics, biomedical engineering, and polymers and plastics. These areas support a broad engagement with semiconductor materials and devices, 2D materials and applications, and advanced memory and neural computing.

Key topics in Saraswat's research consist of:

  • 2D Materials and Applications
  • Semiconductor materials and devices
  • Chalcogenide Semiconductor Thin Films
  • Advanced Memory and Neural Computing
  • Semiconductor materials and interfaces
  • Perovskite Materials and Applications
  • Quantum Dots Synthesis And Properties

The scientist's most frequent coauthors include Eric Pop, Marc Jaikissoon, Aravindh Kumar, Kathryn M. Neilson, and Koosha Nassiri Nazif. Publication venues where Saraswat's work is regularly featured include arXiv (Cornell University), Nano Letters, ACS Nano, ECS Meeting Abstracts, and Nature Communications.

Recent publications illustrate a diverse focus on novel materials and device physics:

  • "High-specific-power flexible transition metal dichalcogenide solar cells," 2021, Nature Communications
  • "Fast-Response Flexible Temperature Sensors with Atomically Thin Molybdenum Disulfide," 2022, Nano Letters
  • "Free-standing 2.7 μm thick ultrathin crystalline silicon solar cell with efficiency above 12.0%," 2020, Nano Energy
  • "High-Performance p-n Junction Transition Metal Dichalcogenide Photovoltaic Cells Enabled by MoOx Doping and Passivation," 2021, Nano Letters
  • "High-Efficiency WSe2 Photovoltaic Devices with Electron-Selective Contacts," 2022, ACS Nano

Among recognitions, Krishna C. Saraswat has received the Semiconductor Industry Association University Researcher Award in 2012. Saraswat was also named an IEEE Fellow in 1989 for contributions to metallization and interconnects for VLSI.

Best Publications

  • 3-D ICs: a novel chip design for improving deep-submicrometer interconnect performance and systems-on-chip integration

    K. Banerjee;S.J. Souri;P. Kapur;K.C. Saraswat

  • Effect of Scaling of Interconnections on the Time Delay of VLSI Circuits

    K.C. Saraswat;F. Mohammadi

  • Interconnect limits on gigascale integration (GSI) in the 21st century

    J.A. Davis;R. Venkatesan;A. Kaloyeros;M. Beylansky

  • Nanometre-scale germanium photodetector enhanced by a near-infrared dipole antenna

    Liang Tang;Sukru Ekin Kocabas;Salman Latif;Ali K. Okyay

  • Three-dimensional integration of nanotechnologies for computing and data storage on a single chip

    Max M. Shulaker;Max M. Shulaker;Gage Hills;Rebecca S. Park;Roger T. Howe

  • Double-Gate Strained-Ge Heterostructure Tunneling FET (TFET) With record high drive currents and ≪60mV/dec subthreshold slope

    T. Krishnamohan;Donghyun Kim;S. Raghunathan;K. Saraswat

  • Germanium nanowire field-effect transistors with SiO2 and high-κ HfO2 gate dielectrics

    Dunwei Wang;Qian Wang;Ali Javey;Ryan Tu

  • Improved Contacts to MoS2 Transistors by Ultra-High Vacuum Metal Deposition

    Chris D. English;Gautam Shine;Vincent E. Dorgan;Krishna C. Saraswat

  • Achieving direct band gap in germanium through integration of Sn alloying and external strain

    Suyog Gupta;Blanka Magyari-Köpe;Yoshio Nishi;Krishna C. Saraswat

  • Dopant segregation in polycrystalline silicon

    Mohammad M. Mandurah;Krishna C. Saraswat;C. Robert Helms;Theodore I. Kamins

  • Two-dimensional thermal oxidation of silicon. II. Modeling stress effects in wet oxides

    D.-B. Kao;J.P. McVittie;W.D. Nix;K.C. Saraswat

  • On the Correct Extraction of Interface Trap Density of MOS Devices With High-Mobility Semiconductor Substrates

    K. Martens;Chi On Chui;G. Brammertz;B. De Jaeger

  • Germanium MOS capacitors incorporating ultrathin high-/spl kappa/ gate dielectric

    Chi On Chui;S. Ramanathan;B.B. Triplett;P.C. McIntyre

  • Improved Contacts to MoS2 Field-Effect Transistors by Ultra-High Vacuum Metal Deposition

    Chris D. English;Gautam Shine;Vincent E. Dorgan;Krishna C. Saraswat

  • Effects of crystallization on the electrical properties of ultrathin HfO2 dielectrics grown by atomic layer deposition

    Hyoungsub Kim;Paul C. McIntyre;Krishna C. Saraswat

  • Two-dimensional thermal oxidation of silicon—I. Experiments

    Dah-Bin Kao;J.P. McVittie;W.D. Nix;K.C. Saraswat

  • A sub-400/spl deg/C germanium MOSFET technology with high-/spl kappa/ dielectric and metal gate

    Chi On Chui;Hyoungsub Kim;D. Chi;B.B. Triplett

  • Technology and reliability constrained future copper interconnects. I. Resistance modeling

    P. Kapur;J.P. McVittie;K.C. Saraswat

  • The effect of fluorine in silicon dioxide gate dielectrics

    P.J. Wright;K.C. Saraswat

  • Low-leakage germanium-seeded laterally-crystallized single-grain 100-nm TFTs for vertical integration applications

    V. Subramanian;M. Toita;N.R. Ibrahim;S.J. Souri

Frequent Co-Authors

Yoshio Nishi
Yoshio Nishi Stanford University
Paul C. McIntyre
Paul C. McIntyre Stanford University
Chi On Chui
Chi On Chui University of California, Los Angeles
Theodore I. Kamins
Theodore I. Kamins Stanford University
James D. Meindl
James D. Meindl Georgia Institute of Technology
Hyoungsub Kim
Hyoungsub Kim Sungkyunkwan University
James S. Harris
James S. Harris Stanford University
Butrus T. Khuri-Yakub
Butrus T. Khuri-Yakub Stanford University
Duygu Kuzum
Duygu Kuzum University of California, San Diego
Mark L. Brongersma
Mark L. Brongersma Stanford University

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