H-Index & Metrics Top Publications

H-Index & Metrics

Discipline name H-index Citations Publications World Ranking National Ranking
Electronics and Electrical Engineering H-index 89 Citations 25,947 466 World Ranking 91 National Ranking 52
Materials Science H-index 95 Citations 27,423 546 World Ranking 509 National Ranking 208

Research.com Recognitions

Awards & Achievements

2012 - Semiconductor Industry Association University Researcher Award

1989 - IEEE Fellow For contributions to metallization and interconnects for VLSI.

Overview

What is he best known for?

The fields of study he is best known for:

  • Quantum mechanics
  • Semiconductor
  • Electron

His primary scientific interests are in Optoelectronics, Electronic engineering, Germanium, Silicon and MOSFET. Krishna C. Saraswat combines subjects such as Gate dielectric and Passivation with his study of Optoelectronics. His Electronic engineering research incorporates elements of Power, Interconnection and Polycrystalline silicon.

His Germanium research includes elements of Doping, Dopant, Thin-film transistor, Photodetector and Transistor. Krishna C. Saraswat has researched Silicon in several fields, including Chemical vapor deposition, Thin film, Annealing, Silicon dioxide and Analytical chemistry. His MOSFET study combines topics in areas such as Heterojunction, Electron mobility, Condensed matter physics, Nanotechnology and PMOS logic.

His most cited work include:

  • 3-D ICs: a novel chip design for improving deep-submicrometer interconnect performance and systems-on-chip integration (924 citations)
  • Nanometre-scale germanium photodetector enhanced by a near-infrared dipole antenna (567 citations)
  • Interconnect limits on gigascale integration (GSI) in the 21st century (508 citations)

What are the main themes of his work throughout his whole career to date?

His scientific interests lie mostly in Optoelectronics, Silicon, Germanium, Electronic engineering and MOSFET. His biological study spans a wide range of topics, including Transistor and Electrical engineering. As part of one scientific family, Krishna C. Saraswat deals mainly with the area of Silicon, narrowing it down to issues related to the Analytical chemistry, and often Chemical vapor deposition and Oxide.

His research integrates issues of Doping, Passivation, Dopant Activation, Gate dielectric and Laser in his study of Germanium. His Electronic engineering research includes themes of Electrical resistivity and conductivity, Interconnection, Chip and Thin-film transistor. His MOSFET study integrates concerns from other disciplines, such as Electron mobility, Heterojunction, Band gap and Leakage.

He most often published in these fields:

  • Optoelectronics (53.90%)
  • Silicon (26.51%)
  • Germanium (25.77%)

What were the highlights of his more recent work (between 2009-2021)?

  • Optoelectronics (53.90%)
  • Germanium (25.77%)
  • Silicon (26.51%)

In recent papers he was focusing on the following fields of study:

Krishna C. Saraswat mainly focuses on Optoelectronics, Germanium, Silicon, MOSFET and Doping. His Optoelectronics study incorporates themes from Transistor, Electronic engineering and Laser. His Germanium research incorporates themes from Diode, Annealing, Direct and indirect band gaps, Lasing threshold and Contact resistance.

His Silicon research integrates issues from Photonics, Epitaxy, Thin film, Substrate and Photoluminescence. His MOSFET research is multidisciplinary, incorporating elements of CMOS, Passivation, Logic gate and Gate dielectric. His Doping study combines topics from a wide range of disciplines, such as Composite material and Analytical chemistry.

Between 2009 and 2021, his most popular works were:

  • Achieving direct band gap in germanium through integration of Sn alloying and external strain (263 citations)
  • Three-dimensional integration of nanotechnologies for computing and data storage on a single chip (248 citations)
  • Improved Contacts to MoS2 Transistors by Ultra-High Vacuum Metal Deposition (200 citations)

In his most recent research, the most cited papers focused on:

  • Quantum mechanics
  • Semiconductor
  • Electron

Krishna C. Saraswat mainly investigates Optoelectronics, Germanium, MOSFET, Direct and indirect band gaps and Schottky barrier. The study incorporates disciplines such as Transistor, Electronic engineering and Laser in addition to Optoelectronics. His Germanium study necessitates a more in-depth grasp of Silicon.

His studies in MOSFET integrate themes in fields like Ion implantation, Gate dielectric and Passivation. His research in Schottky barrier intersects with topics in Fermi level, Condensed matter physics, Quantum tunnelling, Electrical resistivity and conductivity and Contact resistance. The Condensed matter physics study combines topics in areas such as Layer and Semiconductor.

This overview was generated by a machine learning system which analysed the scientist’s body of work. If you have any feedback, you can contact us here.

Top Publications

3-D ICs: a novel chip design for improving deep-submicrometer interconnect performance and systems-on-chip integration

K. Banerjee;S.J. Souri;P. Kapur;K.C. Saraswat.
Proceedings of the IEEE (2001)

1184 Citations

Interconnect limits on gigascale integration (GSI) in the 21st century

J.A. Davis;R. Venkatesan;A. Kaloyeros;M. Beylansky.
Proceedings of the IEEE (2001)

768 Citations

Nanometre-scale germanium photodetector enhanced by a near-infrared dipole antenna

Liang Tang;Sukru Ekin Kocabas;Salman Latif;Ali K. Okyay.
Nature Photonics (2008)

705 Citations

Germanium nanowire field-effect transistors with SiO2 and high-κ HfO2 gate dielectrics

Dunwei Wang;Qian Wang;Ali Javey;Ryan Tu.
Applied Physics Letters (2003)

602 Citations

Double-Gate Strained-Ge Heterostructure Tunneling FET (TFET) With record high drive currents and ≪60mV/dec subthreshold slope

T. Krishnamohan;Donghyun Kim;S. Raghunathan;K. Saraswat.
international electron devices meeting (2008)

518 Citations

Dopant segregation in polycrystalline silicon

Mohammad M. Mandurah;Krishna C. Saraswat;C. Robert Helms;Theodore I. Kamins.
Journal of Applied Physics (1980)

484 Citations

Effect of Scaling of Interconnections on the Time Delay of VLSI Circuits

K.C. Saraswat;F. Mohammadi.
IEEE Journal of Solid-state Circuits (1982)

434 Citations

Two-dimensional thermal oxidation of silicon. II. Modeling stress effects in wet oxides

D.-B. Kao;J.P. McVittie;W.D. Nix;K.C. Saraswat.
IEEE Transactions on Electron Devices (1988)

431 Citations

Germanium MOS capacitors incorporating ultrathin high-/spl kappa/ gate dielectric

Chi On Chui;S. Ramanathan;B.B. Triplett;P.C. McIntyre.
IEEE Electron Device Letters (2002)

427 Citations

On the Correct Extraction of Interface Trap Density of MOS Devices With High-Mobility Semiconductor Substrates

K. Martens;Chi On Chui;G. Brammertz;B. De Jaeger.
IEEE Transactions on Electron Devices (2008)

409 Citations

Profile was last updated on December 6th, 2021.
Research.com Ranking is based on data retrieved from the Microsoft Academic Graph (MAG).
The ranking h-index is inferred from publications deemed to belong to the considered discipline.

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