2023 - Research.com Electronics and Electrical Engineering in United States Leader Award
2012 - Semiconductor Industry Association University Researcher Award
1989 - IEEE Fellow For contributions to metallization and interconnects for VLSI.
His primary scientific interests are in Optoelectronics, Electronic engineering, Germanium, Silicon and MOSFET. Krishna C. Saraswat combines subjects such as Gate dielectric and Passivation with his study of Optoelectronics. His Electronic engineering research incorporates elements of Power, Interconnection and Polycrystalline silicon.
His Germanium research includes elements of Doping, Dopant, Thin-film transistor, Photodetector and Transistor. Krishna C. Saraswat has researched Silicon in several fields, including Chemical vapor deposition, Thin film, Annealing, Silicon dioxide and Analytical chemistry. His MOSFET study combines topics in areas such as Heterojunction, Electron mobility, Condensed matter physics, Nanotechnology and PMOS logic.
His scientific interests lie mostly in Optoelectronics, Silicon, Germanium, Electronic engineering and MOSFET. His biological study spans a wide range of topics, including Transistor and Electrical engineering. As part of one scientific family, Krishna C. Saraswat deals mainly with the area of Silicon, narrowing it down to issues related to the Analytical chemistry, and often Chemical vapor deposition and Oxide.
His research integrates issues of Doping, Passivation, Dopant Activation, Gate dielectric and Laser in his study of Germanium. His Electronic engineering research includes themes of Electrical resistivity and conductivity, Interconnection, Chip and Thin-film transistor. His MOSFET study integrates concerns from other disciplines, such as Electron mobility, Heterojunction, Band gap and Leakage.
Krishna C. Saraswat mainly focuses on Optoelectronics, Germanium, Silicon, MOSFET and Doping. His Optoelectronics study incorporates themes from Transistor, Electronic engineering and Laser. His Germanium research incorporates themes from Diode, Annealing, Direct and indirect band gaps, Lasing threshold and Contact resistance.
His Silicon research integrates issues from Photonics, Epitaxy, Thin film, Substrate and Photoluminescence. His MOSFET research is multidisciplinary, incorporating elements of CMOS, Passivation, Logic gate and Gate dielectric. His Doping study combines topics from a wide range of disciplines, such as Composite material and Analytical chemistry.
Krishna C. Saraswat mainly investigates Optoelectronics, Germanium, MOSFET, Direct and indirect band gaps and Schottky barrier. The study incorporates disciplines such as Transistor, Electronic engineering and Laser in addition to Optoelectronics. His Germanium study necessitates a more in-depth grasp of Silicon.
His studies in MOSFET integrate themes in fields like Ion implantation, Gate dielectric and Passivation. His research in Schottky barrier intersects with topics in Fermi level, Condensed matter physics, Quantum tunnelling, Electrical resistivity and conductivity and Contact resistance. The Condensed matter physics study combines topics in areas such as Layer and Semiconductor.
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3-D ICs: a novel chip design for improving deep-submicrometer interconnect performance and systems-on-chip integration
K. Banerjee;S.J. Souri;P. Kapur;K.C. Saraswat.
Proceedings of the IEEE (2001)
Effect of Scaling of Interconnections on the Time Delay of VLSI Circuits
K.C. Saraswat;F. Mohammadi.
IEEE Journal of Solid-state Circuits (1982)
Interconnect limits on gigascale integration (GSI) in the 21st century
J.A. Davis;R. Venkatesan;A. Kaloyeros;M. Beylansky.
Proceedings of the IEEE (2001)
Nanometre-scale germanium photodetector enhanced by a near-infrared dipole antenna
Liang Tang;Sukru Ekin Kocabas;Salman Latif;Ali K. Okyay.
Nature Photonics (2008)
Double-Gate Strained-Ge Heterostructure Tunneling FET (TFET) With record high drive currents and ≪60mV/dec subthreshold slope
T. Krishnamohan;Donghyun Kim;S. Raghunathan;K. Saraswat.
international electron devices meeting (2008)
Germanium nanowire field-effect transistors with SiO2 and high-κ HfO2 gate dielectrics
Dunwei Wang;Qian Wang;Ali Javey;Ryan Tu.
Applied Physics Letters (2003)
Dopant segregation in polycrystalline silicon
Mohammad M. Mandurah;Krishna C. Saraswat;C. Robert Helms;Theodore I. Kamins.
Journal of Applied Physics (1980)
Three-dimensional integration of nanotechnologies for computing and data storage on a single chip
Max M. Shulaker;Max M. Shulaker;Gage Hills;Rebecca S. Park;Roger T. Howe.
Two-dimensional thermal oxidation of silicon. II. Modeling stress effects in wet oxides
D.-B. Kao;J.P. McVittie;W.D. Nix;K.C. Saraswat.
IEEE Transactions on Electron Devices (1988)
On the Correct Extraction of Interface Trap Density of MOS Devices With High-Mobility Semiconductor Substrates
K. Martens;Chi On Chui;G. Brammertz;B. De Jaeger.
IEEE Transactions on Electron Devices (2008)
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