World's Best Scientists 2026 revealed!

D-Index & Metrics

Electronics and Electrical Engineering

D-Index
73
Citations
22727
World Ranking
748
National Ranking
329

James D. Meindl publication distribution in Electronics and Electrical Engineering in 2026

The chart shows the distribution of publications by all Research.com ranked scientists in the field of Electronics and Electrical Engineering in 2026. The highlighted bar marks where James D. Meindl sits on this spectrum.

34–53 publications: 24 scientists 54–73 publications: 52 scientists 74–93 publications: 114 scientists 94–113 publications: 203 scientists 114–133 publications: 269 scientists 134–153 publications: 355 scientists 154–173 publications: 403 scientists 174–193 publications: 445 scientists 194–213 publications: 430 scientists 214–233 publications: 431 scientists 234–253 publications: 399 scientists 254–273 publications: 366 scientists 274–293 publications: 335 scientists 294–313 publications: 300 scientists 314–333 publications: 276 scientists 334–353 publications: 250 scientists 354–373 publications: 214 scientists 374–393 publications: 187 scientists 394–413 publications: 152 scientists 414–433 publications: 169 scientists 434–453 publications: 147 scientists 454–473 publications: 111 scientists 474–493 publications: 117 scientists 494–513 publications: 103 scientists 514–533 publications: 99 scientists 534–553 publications: 92 scientists 554–573 publications: 75 scientists 574–593 publications: 58 scientists 594–613 publications: 69 scientists 614–633 publications: 50 scientists 634–653 publications: 62 scientists 654–673 publications: 54 scientists 674–693 publications: 44 scientists 694–713 publications: 37 scientists 714–733 publications: 28 scientists 734–753 publications: 26 scientists 754–773 publications: 26 scientists 774–793 publications: 19 scientists 794–813 publications: 23 scientists 814–833 publications: 20 scientists 834–853 publications: 16 scientists 854–873 publications: 20 scientists 874–893 publications: 11 scientists 894–913 publications: 11 scientists 914–933 publications: 16 scientists 934–953 publications: 13 scientists 954–973 publications: 10 scientists 974–993 publications: 11 scientists 994–1,013 publications: 9 scientists 1,014–1,033 publications: 9 scientists 1,034–1,053 publications: 10 scientists 1,054–1,064 publications: 6 scientists 1,065+ publications: 99 scientists
34 publications 1,065+

This scientist: 510 publications — 85th percentile

85% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 1,065 publications or more.

James D. Meindl D-index placement in Electronics and Electrical Engineering in 2026

The chart shows the D-index (discipline H-index) distribution of Electronics and Electrical Engineering scientists ranked by Research.com in 2026. The highlighted bar marks where James D. Meindl sits on this spectrum.

30 D-Index: 178 scientists 31 D-Index: 257 scientists 32 D-Index: 263 scientists 33 D-Index: 262 scientists 34 D-Index: 244 scientists 35 D-Index: 236 scientists 36 D-Index: 211 scientists 37 D-Index: 220 scientists 38 D-Index: 214 scientists 39 D-Index: 214 scientists 40 D-Index: 205 scientists 41 D-Index: 187 scientists 42 D-Index: 194 scientists 43 D-Index: 201 scientists 44 D-Index: 155 scientists 45 D-Index: 189 scientists 46 D-Index: 148 scientists 47 D-Index: 160 scientists 48 D-Index: 134 scientists 49 D-Index: 130 scientists 50 D-Index: 141 scientists 51 D-Index: 156 scientists 52 D-Index: 108 scientists 53 D-Index: 130 scientists 54 D-Index: 112 scientists 55 D-Index: 97 scientists 56 D-Index: 111 scientists 57 D-Index: 102 scientists 58 D-Index: 108 scientists 59 D-Index: 120 scientists 60 D-Index: 103 scientists 61 D-Index: 93 scientists 62 D-Index: 92 scientists 63 D-Index: 74 scientists 64 D-Index: 77 scientists 65 D-Index: 73 scientists 66 D-Index: 64 scientists 67 D-Index: 69 scientists 68 D-Index: 60 scientists 69 D-Index: 39 scientists 70 D-Index: 57 scientists 71 D-Index: 59 scientists 72 D-Index: 46 scientists 73 D-Index: 49 scientists 74 D-Index: 38 scientists 75 D-Index: 35 scientists 76 D-Index: 32 scientists 77 D-Index: 35 scientists 78 D-Index: 31 scientists 79 D-Index: 22 scientists 80 D-Index: 34 scientists 81 D-Index: 31 scientists 82 D-Index: 34 scientists 83 D-Index: 23 scientists 84 D-Index: 18 scientists 85 D-Index: 30 scientists 86 D-Index: 19 scientists 87 D-Index: 19 scientists 88 D-Index: 20 scientists 89 D-Index: 8 scientists 90 D-Index: 17 scientists 91 D-Index: 7 scientists 92 D-Index: 14 scientists 93 D-Index: 9 scientists 94 D-Index: 15 scientists 95 D-Index: 10 scientists 96 D-Index: 12 scientists 97 D-Index: 10 scientists 98 D-Index: 10 scientists 99 D-Index: 12 scientists 100 D-Index: 16 scientists 101 D-Index: 5 scientists 102 D-Index: 7 scientists 103 D-Index: 7 scientists 104 D-Index: 8 scientists 105 D-Index: 9 scientists 106 D-Index: 13 scientists 107 D-Index: 4 scientists 108 D-Index: 5 scientists 109 D-Index: 10 scientists 110 D-Index: 8 scientists 111+ D-Index: 96 scientists
30 D-Index 111+

This scientist: 73 D-Index — 89th percentile

89% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 111 D-Index or more.

Research.com Recognitions

  • 2016 - Monie A. Ferst Award, Sigma Xi
  • 2006 - IEEE Medal of Honor For pioneering contributions to microelectronics, including low power, biomedical, physical limits and on-chip interconnect networks.”
  • 1999 - Semiconductor Industry Association University Researcher Award
  • 1992 - Fellow of the American Academy of Arts and Sciences
  • 1989 - IEEE Donald O. Pederson Award in Solid-State Circuits "For contributions to solid-state circuits and solid-state circuit technology."
  • 1967 - Fellow of the American Association for the Advancement of Science (AAAS)

Overview

What is he best known for?

The fields of study he is best known for:

  • Electrical engineering
  • Integrated circuit
  • Semiconductor

His primary areas of investigation include Electronic engineering, Electrical engineering, Interconnection, Integrated circuit and Nanotechnology. His Electronic engineering research is multidisciplinary, incorporating perspectives in Die, Inductance and MOSFET. His work on Microfluidics expands to the thematically related Electrical engineering.

His work deals with themes such as Clock rate, Reliability and Repeater insertion, which intersect with Interconnection. His research in Integrated circuit intersects with topics in Emphasis, Transistor, Engineering physics and Repeater. His study in the field of Nanoelectronics, Carbon nanotube and Nanotube also crosses realms of Molecular electronics.

His most cited work include:

  • Impact of die-to-die and within-die parameter fluctuations on the maximum clock frequency distribution for gigascale integration (666 citations)
  • The impact of intrinsic device fluctuations on CMOS SRAM cell stability (639 citations)
  • Interconnect limits on gigascale integration (GSI) in the 21st century (508 citations)

What are the main themes of his work throughout his whole career to date?

James D. Meindl spends much of his time researching Electronic engineering, Electrical engineering, Interconnection, Optoelectronics and Chip. His studies in Electronic engineering integrate themes in fields like Clock rate and Voltage. His work on Transistor, Integrated circuit, Threshold voltage and Electronic circuit is typically connected to Dissipation as part of general Electrical engineering study, connecting several disciplines of science.

His work carried out in the field of Threshold voltage brings together such families of science as Subthreshold conduction and MOSFET. His work is dedicated to discovering how Interconnection, RLC circuit are connected with Transient response and Inductance and other disciplines. His biological study spans a wide range of topics, including Optics, Carbon nanotube and Polymer.

He most often published in these fields:

  • Electronic engineering (47.85%)
  • Electrical engineering (33.49%)
  • Interconnection (23.44%)

What were the highlights of his more recent work (between 2004-2013)?

  • Optoelectronics (22.49%)
  • Electronic engineering (47.85%)
  • Electrical engineering (33.49%)

In recent papers he was focusing on the following fields of study:

His primary areas of study are Optoelectronics, Electronic engineering, Electrical engineering, Interconnection and Chip. His Optoelectronics study combines topics from a wide range of disciplines, such as Nanoelectronics, Carbon nanotube, Optics and Copper. The study incorporates disciplines such as Die and Transistor, MOSFET in addition to Electronic engineering.

He has included themes like Threshold voltage and Scaling in his MOSFET study. His Interconnection research incorporates elements of Flip chip, Bandwidth and Integrated circuit. His research integrates issues of Surface-mount technology, Electronic packaging and Electrical resistance and conductance in his study of Chip.

Between 2004 and 2013, his most popular works were:

  • Breakdown current density of graphene nanoribbons (315 citations)
  • Compact physical models for multiwall carbon-nanotube interconnects (303 citations)
  • Performance comparison between carbon nanotube and copper interconnects for gigascale integration (GSI) (282 citations)

In his most recent research, the most cited papers focused on:

  • Electrical engineering
  • Integrated circuit
  • Semiconductor

James D. Meindl mostly deals with Carbon nanotube, Electronic engineering, Interconnection, Optoelectronics and Nanoelectronics. The Carbon nanotube study which covers Capacitance that intersects with Inductance, Particle scattering and Network on a chip. The Electronic engineering study combines topics in areas such as Die and Wafer, Electrical engineering.

In most of his Interconnection studies, his work intersects topics such as Integrated circuit. His Optoelectronics research is multidisciplinary, relying on both Carbon nanotube actuators, Optics, Graphene nanoribbons, Graphene and Microchannel. His Nanoelectronics research incorporates themes from Quantum wire, Bandwidth and Phonon scattering.

Best Publications

  • Impact of die-to-die and within-die parameter fluctuations on the maximum clock frequency distribution for gigascale integration

    K.A. Bowman;S.G. Duvall;J.D. Meindl

  • The impact of intrinsic device fluctuations on CMOS SRAM cell stability

    A.J. Bhavnagarwala;Xinghai Tang;J.D. Meindl

  • Interconnect limits on gigascale integration (GSI) in the 21st century

    J.A. Davis;R. Venkatesan;A. Kaloyeros;M. Beylansky

  • Ion-implanted complementary MOS transistors in low-voltage circuits

    R.M. Swanson;J.D. Meindl

  • Optimal interconnection circuits for VLSI

    H.B. Bakoglu;J.D. Meindl

  • Breakdown current density of graphene nanoribbons

    Raghunath Murali;Yinxiao Yang;Kevin Brenner;Thomas Beck

  • Limits on Silicon Nanoelectronics for Terascale Integration

    James D. Meindl;Qiang Chen;Jeffrey A. Davis

  • Breakdown Current Density of Graphene Nano Ribbons

    Raghunath Murali;Yinxiao Yang;Kevin Brenner;Thomas Beck

  • A stochastic wire-length distribution for gigascale integration (GSI). I. Derivation and validation

    J.A. Davis;V.K. De;J.D. Meindl

  • Performance comparison between carbon nanotube and copper interconnects for gigascale integration (GSI)

    A. Naeemi;R. Sarvari;J.D. Meindl

  • Compact physical models for multiwall carbon-nanotube interconnects

    A. Naeemi;J.D. Meindl

  • A physical alpha-power law MOSFET model

    K.A. Bowman;B.L. Austin;J.C. Eble;Xinghai Tang

  • Modeling and optimization of monolithic polycrystalline silicon resistors

    N.C.-C. Lu;L. Gerzberg;Chih-Yuan Lu;J.D. Meindl

  • Intrinsic MOSFET parameter fluctuations due to random dopant placement

    Xinghai Tang;V.K. De;J.D. Meindl

  • Low power microelectronics: retrospect and prospect

    Unknown

  • A stochastic wire-length distribution for gigascale integration (GSI). II. Applications to clock frequency, power dissipation, and chip size estimation

    J.A. Davis;V.K. De;J.D. Meindl

  • A physical short-channel threshold voltage model for undoped symmetric double-gate MOSFETs

    Qiang Chen;E.M. Harrell;J.D. Meindl

  • Conductance Modeling for Graphene Nanoribbon (GNR) Interconnects

    A. Naeemi;J.D. Meindl

  • Design and Performance Modeling for Single-Walled Carbon Nanotubes as Local, Semiglobal, and Global Interconnects in Gigascale Integrated Systems

    A. Naeemi;J.D. Meindl

  • Compact Physics-Based Circuit Models for Graphene Nanoribbon Interconnects

    A. Naeemi;J.D. Meindl

  • Interconnect opportunities for gigascale integration

    J.D. Meindl

Frequent Co-Authors

Azad Naeemi
Azad Naeemi Georgia Institute of Technology
Muhannad S. Bakir
Muhannad S. Bakir Georgia Institute of Technology
Thomas K. Gaylord
Thomas K. Gaylord Georgia Institute of Technology
Krishna C. Saraswat
Krishna C. Saraswat Stanford University
Paul A. Kohl
Paul A. Kohl Georgia Institute of Technology
Keith Bowman
Keith Bowman Qualcomm (United States)
James D. Plummer
James D. Plummer Stanford University
Robert W. Dutton
Robert W. Dutton Stanford University
Elias N. Glytsis
Elias N. Glytsis National Technical University of Athens
Walt A. de Heer
Walt A. de Heer Georgia Institute of Technology

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