World's Best Scientists 2026 revealed!

D-Index & Metrics

Electronics and Electrical Engineering

D-Index
73
Citations
22727
World Ranking
748
National Ranking
328

Research.com Recognitions

  • 2016 - Monie A. Ferst Award, Sigma Xi
  • 2006 - IEEE Medal of Honor For pioneering contributions to microelectronics, including low power, biomedical, physical limits and on-chip interconnect networks.”
  • 1999 - Semiconductor Industry Association University Researcher Award
  • 1992 - Fellow of the American Academy of Arts and Sciences
  • 1989 - IEEE Donald O. Pederson Award in Solid-State Circuits "For contributions to solid-state circuits and solid-state circuit technology."
  • 1967 - Fellow of the American Association for the Advancement of Science (AAAS)

Overview

What is he best known for?

The fields of study he is best known for:

  • Electrical engineering
  • Integrated circuit
  • Semiconductor

His primary areas of investigation include Electronic engineering, Electrical engineering, Interconnection, Integrated circuit and Nanotechnology. His Electronic engineering research is multidisciplinary, incorporating perspectives in Die, Inductance and MOSFET. His work on Microfluidics expands to the thematically related Electrical engineering.

His work deals with themes such as Clock rate, Reliability and Repeater insertion, which intersect with Interconnection. His research in Integrated circuit intersects with topics in Emphasis, Transistor, Engineering physics and Repeater. His study in the field of Nanoelectronics, Carbon nanotube and Nanotube also crosses realms of Molecular electronics.

His most cited work include:

  • Impact of die-to-die and within-die parameter fluctuations on the maximum clock frequency distribution for gigascale integration (666 citations)
  • The impact of intrinsic device fluctuations on CMOS SRAM cell stability (639 citations)
  • Interconnect limits on gigascale integration (GSI) in the 21st century (508 citations)

What are the main themes of his work throughout his whole career to date?

James D. Meindl spends much of his time researching Electronic engineering, Electrical engineering, Interconnection, Optoelectronics and Chip. His studies in Electronic engineering integrate themes in fields like Clock rate and Voltage. His work on Transistor, Integrated circuit, Threshold voltage and Electronic circuit is typically connected to Dissipation as part of general Electrical engineering study, connecting several disciplines of science.

His work carried out in the field of Threshold voltage brings together such families of science as Subthreshold conduction and MOSFET. His work is dedicated to discovering how Interconnection, RLC circuit are connected with Transient response and Inductance and other disciplines. His biological study spans a wide range of topics, including Optics, Carbon nanotube and Polymer.

He most often published in these fields:

  • Electronic engineering (47.85%)
  • Electrical engineering (33.49%)
  • Interconnection (23.44%)

What were the highlights of his more recent work (between 2004-2013)?

  • Optoelectronics (22.49%)
  • Electronic engineering (47.85%)
  • Electrical engineering (33.49%)

In recent papers he was focusing on the following fields of study:

His primary areas of study are Optoelectronics, Electronic engineering, Electrical engineering, Interconnection and Chip. His Optoelectronics study combines topics from a wide range of disciplines, such as Nanoelectronics, Carbon nanotube, Optics and Copper. The study incorporates disciplines such as Die and Transistor, MOSFET in addition to Electronic engineering.

He has included themes like Threshold voltage and Scaling in his MOSFET study. His Interconnection research incorporates elements of Flip chip, Bandwidth and Integrated circuit. His research integrates issues of Surface-mount technology, Electronic packaging and Electrical resistance and conductance in his study of Chip.

Between 2004 and 2013, his most popular works were:

  • Breakdown current density of graphene nanoribbons (315 citations)
  • Compact physical models for multiwall carbon-nanotube interconnects (303 citations)
  • Performance comparison between carbon nanotube and copper interconnects for gigascale integration (GSI) (282 citations)

In his most recent research, the most cited papers focused on:

  • Electrical engineering
  • Integrated circuit
  • Semiconductor

James D. Meindl mostly deals with Carbon nanotube, Electronic engineering, Interconnection, Optoelectronics and Nanoelectronics. The Carbon nanotube study which covers Capacitance that intersects with Inductance, Particle scattering and Network on a chip. The Electronic engineering study combines topics in areas such as Die and Wafer, Electrical engineering.

In most of his Interconnection studies, his work intersects topics such as Integrated circuit. His Optoelectronics research is multidisciplinary, relying on both Carbon nanotube actuators, Optics, Graphene nanoribbons, Graphene and Microchannel. His Nanoelectronics research incorporates themes from Quantum wire, Bandwidth and Phonon scattering.

Best Publications

  • Impact of die-to-die and within-die parameter fluctuations on the maximum clock frequency distribution for gigascale integration

    K.A. Bowman;S.G. Duvall;J.D. Meindl

  • The impact of intrinsic device fluctuations on CMOS SRAM cell stability

    A.J. Bhavnagarwala;Xinghai Tang;J.D. Meindl

  • Interconnect limits on gigascale integration (GSI) in the 21st century

    J.A. Davis;R. Venkatesan;A. Kaloyeros;M. Beylansky

  • Ion-implanted complementary MOS transistors in low-voltage circuits

    R.M. Swanson;J.D. Meindl

  • Optimal interconnection circuits for VLSI

    H.B. Bakoglu;J.D. Meindl

  • Breakdown current density of graphene nanoribbons

    Raghunath Murali;Yinxiao Yang;Kevin Brenner;Thomas Beck

  • Limits on Silicon Nanoelectronics for Terascale Integration

    James D. Meindl;Qiang Chen;Jeffrey A. Davis

  • Breakdown Current Density of Graphene Nano Ribbons

    Raghunath Murali;Yinxiao Yang;Kevin Brenner;Thomas Beck

  • A stochastic wire-length distribution for gigascale integration (GSI). I. Derivation and validation

    J.A. Davis;V.K. De;J.D. Meindl

  • Performance comparison between carbon nanotube and copper interconnects for gigascale integration (GSI)

    A. Naeemi;R. Sarvari;J.D. Meindl

  • Compact physical models for multiwall carbon-nanotube interconnects

    A. Naeemi;J.D. Meindl

  • A physical alpha-power law MOSFET model

    K.A. Bowman;B.L. Austin;J.C. Eble;Xinghai Tang

  • Modeling and optimization of monolithic polycrystalline silicon resistors

    N.C.-C. Lu;L. Gerzberg;Chih-Yuan Lu;J.D. Meindl

  • Intrinsic MOSFET parameter fluctuations due to random dopant placement

    Xinghai Tang;V.K. De;J.D. Meindl

  • Low power microelectronics: retrospect and prospect

    Unknown

  • A stochastic wire-length distribution for gigascale integration (GSI). II. Applications to clock frequency, power dissipation, and chip size estimation

    J.A. Davis;V.K. De;J.D. Meindl

  • A physical short-channel threshold voltage model for undoped symmetric double-gate MOSFETs

    Qiang Chen;E.M. Harrell;J.D. Meindl

  • Conductance Modeling for Graphene Nanoribbon (GNR) Interconnects

    A. Naeemi;J.D. Meindl

  • Design and Performance Modeling for Single-Walled Carbon Nanotubes as Local, Semiglobal, and Global Interconnects in Gigascale Integrated Systems

    A. Naeemi;J.D. Meindl

  • Compact Physics-Based Circuit Models for Graphene Nanoribbon Interconnects

    A. Naeemi;J.D. Meindl

  • Interconnect opportunities for gigascale integration

    J.D. Meindl

Frequent Co-Authors

Muhannad S. Bakir
Muhannad S. Bakir Georgia Institute of Technology
Krishna C. Saraswat
Krishna C. Saraswat Stanford University
Paul A. Kohl
Paul A. Kohl Georgia Institute of Technology
Keith Bowman
Keith Bowman Qualcomm (United States)
James D. Plummer
James D. Plummer Stanford University
Robert W. Dutton
Robert W. Dutton Stanford University
Elias N. Glytsis
Elias N. Glytsis National Technical University of Athens
Vivek De
Vivek De Intel (United States)
Walt A. de Heer
Walt A. de Heer Georgia Institute of Technology
Claire Berger
Claire Berger Georgia Institute of Technology

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