World's Best Scientists 2026 revealed!

D-Index & Metrics

Discipline name D-Index World Ranking Current World Ranking National Ranking Current National Ranking Publications Citations
Electronics and Electrical Engineering 81 493 475 228 215 310 27556
Materials Science 77 3079 2974 860 808 267 25940

Kaustav Banerjee publications per year

The chart shows the history of publications by Kaustav Banerjee between 1996 and 2025, highlighting the no. of papers published in each year and offering an overview of the publication velocity of this scholar. Kaustav Banerjee published across 30 years, from 1996 to 2025, averaging 10.9 papers a year. Output peaked at 25 publications in 2010. 10 of the 327 publications appeared in the last two years.

No. of publications
5 10 15 20 25
Bar chart. Horizontal axis: year, 1996 to 2025. Vertical axis: number of publications, 0 to 25. Peak 25 publications in 2010. 1996: 4 publications 1997: 3 publications 1998: 4 publications 1999: 3 publications 2000: 10 publications 2001: 20 publications 2002: 24 publications 2003: 9 publications 2004: 13 publications 2005: 15 publications 2006: 11 publications 2007: 12 publications 2008: 14 publications 2009: 19 publications 2010: 25 publications 2011: 15 publications 2012: 10 publications 2013: 17 publications 2014: 16 publications 2015: 10 publications 2016: 9 publications 2017: 12 publications 2018: 9 publications 2019: 4 publications 2020: 10 publications 2021: 9 publications 2022: 4 publications 2023: 6 publications 2024: 8 publications 2025: 2 publications
1996 2025

327 publications in total across all disciplines

View publications per year as a table
Kaustav Banerjee: publications per year, 1996 to 2025
Year Publications
1996 4
1997 3
1998 4
1999 3
2000 10
2001 20
2002 24
2003 9
2004 13
2005 15
2006 11
2007 12
2008 14
2009 19
2010 25
2011 15
2012 10
2013 17
2014 16
2015 10
2016 9
2017 12
2018 9
2019 4
2020 10
2021 9
2022 4
2023 6
2024 8
2025 2
Total 327
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Kaustav Banerjee publication distribution in Electronics and Electrical Engineering in 2026

The chart shows the distribution of publications by all Research.com ranked scientists in the field of Electronics and Electrical Engineering in 2026. The highlighted bar marks where Kaustav Banerjee sits on this spectrum.

No. of scientists
100 200 300 400
Bar chart with 53 bars. Horizontal axis: publications, 34–53 to 1,065+. Vertical axis: number of scientists, 0 to 445. Most scientists, 445, have 174–193 publications. The last bar groups every scientist with 1,065 publications or more. The highlighted bar, 294–313 publications, is where this scientist sits. 34–53 publications: 24 scientists 54–73 publications: 52 scientists 74–93 publications: 114 scientists 94–113 publications: 203 scientists 114–133 publications: 269 scientists 134–153 publications: 355 scientists 154–173 publications: 403 scientists 174–193 publications: 445 scientists 194–213 publications: 430 scientists 214–233 publications: 431 scientists 234–253 publications: 399 scientists 254–273 publications: 366 scientists 274–293 publications: 335 scientists 294–313 publications: 300 scientists 314–333 publications: 276 scientists 334–353 publications: 250 scientists 354–373 publications: 214 scientists 374–393 publications: 187 scientists 394–413 publications: 152 scientists 414–433 publications: 169 scientists 434–453 publications: 147 scientists 454–473 publications: 111 scientists 474–493 publications: 117 scientists 494–513 publications: 103 scientists 514–533 publications: 99 scientists 534–553 publications: 92 scientists 554–573 publications: 75 scientists 574–593 publications: 58 scientists 594–613 publications: 69 scientists 614–633 publications: 50 scientists 634–653 publications: 62 scientists 654–673 publications: 54 scientists 674–693 publications: 44 scientists 694–713 publications: 37 scientists 714–733 publications: 28 scientists 734–753 publications: 26 scientists 754–773 publications: 26 scientists 774–793 publications: 19 scientists 794–813 publications: 23 scientists 814–833 publications: 20 scientists 834–853 publications: 16 scientists 854–873 publications: 20 scientists 874–893 publications: 11 scientists 894–913 publications: 11 scientists 914–933 publications: 16 scientists 934–953 publications: 13 scientists 954–973 publications: 10 scientists 974–993 publications: 11 scientists 994–1,013 publications: 9 scientists 1,014–1,033 publications: 9 scientists 1,034–1,053 publications: 10 scientists 1,054–1,064 publications: 6 scientists 1,065+ publications: 99 scientists
34–53 publications 1,065+

This scientist: 310 publications — 59th percentile

59% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 1,065 publications or more.

View publications distribution as a table
Number of Electronics and Electrical Engineering scientists by publication count, Research.com 2026 ranking edition. Based on 6,875 ranked scientists.
Publications Scientists This scientist
34–53 24
54–73 52
74–93 114
94–113 203
114–133 269
134–153 355
154–173 403
174–193 445
194–213 430
214–233 431
234–253 399
254–273 366
274–293 335
294–313 300 310
314–333 276
334–353 250
354–373 214
374–393 187
394–413 152
414–433 169
434–453 147
454–473 111
474–493 117
494–513 103
514–533 99
534–553 92
554–573 75
574–593 58
594–613 69
614–633 50
634–653 62
654–673 54
674–693 44
694–713 37
714–733 28
734–753 26
754–773 26
774–793 19
794–813 23
814–833 20
834–853 16
854–873 20
874–893 11
894–913 11
914–933 16
934–953 13
954–973 10
974–993 11
994–1,013 9
1,014–1,033 9
1,034–1,053 10
1,054–1,064 6
1,065+ 99
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Kaustav Banerjee D-index placement in Electronics and Electrical Engineering in 2026

The chart shows the D-index (discipline H-index) distribution of Electronics and Electrical Engineering scientists ranked by Research.com in 2026. The highlighted bar marks where Kaustav Banerjee sits on this spectrum.

No. of scientists
50 100 150 200 250
Bar chart with 82 bars. Horizontal axis: D-Index, 30 to 111+. Vertical axis: number of scientists, 0 to 263. Most scientists, 263, have 32 D-Index. The last bar groups every scientist with 111 D-Index or more. The highlighted bar, 81 D-Index, is where this scientist sits. 30 D-Index: 178 scientists 31 D-Index: 257 scientists 32 D-Index: 263 scientists 33 D-Index: 262 scientists 34 D-Index: 244 scientists 35 D-Index: 236 scientists 36 D-Index: 211 scientists 37 D-Index: 220 scientists 38 D-Index: 214 scientists 39 D-Index: 214 scientists 40 D-Index: 205 scientists 41 D-Index: 187 scientists 42 D-Index: 194 scientists 43 D-Index: 201 scientists 44 D-Index: 155 scientists 45 D-Index: 189 scientists 46 D-Index: 148 scientists 47 D-Index: 160 scientists 48 D-Index: 134 scientists 49 D-Index: 130 scientists 50 D-Index: 141 scientists 51 D-Index: 156 scientists 52 D-Index: 108 scientists 53 D-Index: 130 scientists 54 D-Index: 112 scientists 55 D-Index: 97 scientists 56 D-Index: 111 scientists 57 D-Index: 102 scientists 58 D-Index: 108 scientists 59 D-Index: 120 scientists 60 D-Index: 103 scientists 61 D-Index: 93 scientists 62 D-Index: 92 scientists 63 D-Index: 74 scientists 64 D-Index: 77 scientists 65 D-Index: 73 scientists 66 D-Index: 64 scientists 67 D-Index: 69 scientists 68 D-Index: 60 scientists 69 D-Index: 39 scientists 70 D-Index: 57 scientists 71 D-Index: 59 scientists 72 D-Index: 46 scientists 73 D-Index: 49 scientists 74 D-Index: 38 scientists 75 D-Index: 35 scientists 76 D-Index: 32 scientists 77 D-Index: 35 scientists 78 D-Index: 31 scientists 79 D-Index: 22 scientists 80 D-Index: 34 scientists 81 D-Index: 31 scientists 82 D-Index: 34 scientists 83 D-Index: 23 scientists 84 D-Index: 18 scientists 85 D-Index: 30 scientists 86 D-Index: 19 scientists 87 D-Index: 19 scientists 88 D-Index: 20 scientists 89 D-Index: 8 scientists 90 D-Index: 17 scientists 91 D-Index: 7 scientists 92 D-Index: 14 scientists 93 D-Index: 9 scientists 94 D-Index: 15 scientists 95 D-Index: 10 scientists 96 D-Index: 12 scientists 97 D-Index: 10 scientists 98 D-Index: 10 scientists 99 D-Index: 12 scientists 100 D-Index: 16 scientists 101 D-Index: 5 scientists 102 D-Index: 7 scientists 103 D-Index: 7 scientists 104 D-Index: 8 scientists 105 D-Index: 9 scientists 106 D-Index: 13 scientists 107 D-Index: 4 scientists 108 D-Index: 5 scientists 109 D-Index: 10 scientists 110 D-Index: 8 scientists 111+ D-Index: 96 scientists
30 D-Index 111+

This scientist: 81 D-Index — 93rd percentile

93% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 111 D-Index or more.

View D-Index distribution as a table
Number of Electronics and Electrical Engineering scientists by D-index, Research.com 2026 ranking edition. Based on 6,875 ranked scientists.
D-Index Scientists This scientist
30 178
31 257
32 263
33 262
34 244
35 236
36 211
37 220
38 214
39 214
40 205
41 187
42 194
43 201
44 155
45 189
46 148
47 160
48 134
49 130
50 141
51 156
52 108
53 130
54 112
55 97
56 111
57 102
58 108
59 120
60 103
61 93
62 92
63 74
64 77
65 73
66 64
67 69
68 60
69 39
70 57
71 59
72 46
73 49
74 38
75 35
76 32
77 35
78 31
79 22
80 34
81 31 81
82 34
83 23
84 18
85 30
86 19
87 19
88 20
89 8
90 17
91 7
92 14
93 9
94 15
95 10
96 12
97 10
98 10
99 12
100 16
101 5
102 7
103 7
104 8
105 9
106 13
107 4
108 5
109 10
110 8
111+ 96
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Research.com Recognitions

  • 2016 - Fellow of the American Association for the Advancement of Science (AAAS)
  • 2015 - IEEE Kiyo Tomiyasu Award “For contributions to nano-materials, devices, circuits, and CAD, enabling lowpower and low-cost electronics.”
  • 2012 - IEEE Fellow For contributions to modeling and design of nanoscale integrated circuit interconnects

Overview

Kaustav Banerjee is affiliated with the University of California, Santa Barbara in the United States. Their research primarily spans the fields of Engineering and Materials Science, with a significant emphasis on Electrical and Electronic Engineering and Materials Chemistry as subfields. Additional subfields include Biomedical Engineering, Mechanical Engineering, and Inorganic Chemistry.

Their work covers various topics including:

  • 2D Materials and Applications
  • Semiconductor materials and devices
  • Ferroelectric and Negative Capacitance Devices
  • Graphene research and applications
  • Advanced Memory and Neural Computing
  • MXene and MAX Phase Materials
  • Advancements in Semiconductor Devices and Circuit Design

Several recent papers illustrate the scope of their research contributions. Notable publications include:

  • "The future transistors," published in 2023 in Nature
  • "Defect and strain engineering of monolayer WSe2 enables site-controlled single-photon emission up to 150 K," 2021, Nature Communications
  • "Is negative capacitance FET a steep-slope logic switch?" 2020, Nature Communications
  • "Quantum-Engineered Devices Based on 2D Materials for Next-Generation Information Processing and Storage," 2022, Advanced Materials
  • "One-Dimensional Edge Contacts to Two-Dimensional Transition-Metal Dichalcogenides: Uncovering the Role of Schottky-Barrier Anisotropy in Charge Transport across MoS2/Metal Interfaces," 2021, Physical Review Applied

Frequent co-authors collaborating with Kaustav Banerjee include:

  • Wei Cao
  • Arnab Pal
  • Kamyar Parto
  • Kunjesh Agashiwala
  • Chao-Hui Yeh

Their research has appeared repeatedly in the following publication venues:

  • Nature Communications (4 publications)
  • IEEE Transactions on Electron Devices (4 publications)
  • Nature (2 publications)
  • MRS Bulletin (2 publications)
  • Advanced Materials (1 publication)

In terms of recognition, Kaustav Banerjee's awards include:

  • Fellow of the American Association for the Advancement of Science (AAAS), 2016
  • IEEE Kiyo Tomiyasu Award, 2015, for contributions to nano-materials, devices, circuits, and CAD enabling low-power and low-cost electronics
  • IEEE Fellow, 2012, for contributions to modeling and design of nanoscale integrated circuit interconnects

Best Publications

  • Electrical contacts to two-dimensional semiconductors

    Adrien Allain;Jiahao Kang;Kaustav Banerjee;Andras Kis

  • 3-D ICs: a novel chip design for improving deep-submicrometer interconnect performance and systems-on-chip integration

    K. Banerjee;S.J. Souri;P. Kapur;K.C. Saraswat

  • Role of metal contacts in designing high-performance monolayer n-type WSe2 field effect transistors.

    Wei Liu;Jiahao Kang;Deblina Sarkar;Yasin Khatami

  • MoS2 Field-Effect Transistor for Next-Generation Label-Free Biosensors

    Deblina Sarkar;Wei Liu;Xuejun Xie;Aaron C. Anselmo

  • A subthermionic tunnel field-effect transistor with an atomically thin channel.

    Deblina Sarkar;Xuejun Xie;Wei Liu;Wei Cao

  • Computational Study of Metal Contacts to Monolayer Transition-Metal Dichalcogenide Semiconductors

    Jiahao Kang;Wei Liu;Deblina Sarkar;Debdeep Jena

  • Interconnect limits on gigascale integration (GSI) in the 21st century

    J.A. Davis;R. Venkatesan;A. Kaloyeros;M. Beylansky

  • Carbon Nanomaterials for Next-Generation Interconnects and Passives: Physics, Status, and Prospects

    Hong Li;Chuan Xu;N. Srivastava;K. Banerjee

  • Two-dimensional van der Waals materials

    Pulickel Ajayan;Philip Kim;Kaustav Banerjee

  • The future transistors

    Unknown

  • Circuit Modeling and Performance Analysis of Multi-Walled Carbon Nanotube Interconnects

    Hong Li;Wen-Yan Yin;K. Banerjee;Jun-Fa Mao

  • Modeling, Analysis, and Design of Graphene Nano-Ribbon Interconnects

    Chuan Xu;Hong Li;K. Banerjee

  • A power-optimal repeater insertion methodology for global interconnects in nanometer designs

    K. Banerjee;A. Mehrotra

  • High-performance MoS2 transistors with low-resistance molybdenum contacts

    Jiahao Kang;Wei Liu;Kaustav Banerjee

  • Steep Subthreshold Slope n- and p-Type Tunnel-FET Devices for Low-Power and Energy-Efficient Digital Circuits

    Y. Khatami;K. Banerjee

  • Synthesis of high-quality monolayer and bilayer graphene on copper using chemical vapor deposition

    Wei Liu;Hong Li;Chuan Xu;Yasin Khatami

  • Functionalization of Transition Metal Dichalcogenides with Metallic Nanoparticles: Implications for Doping and Gas-Sensing

    Deblina Sarkar;Xuejun Xie;Jiahao Kang;Haojun Zhang

  • Performance analysis of carbon nanotube interconnects for VLSI applications

    N. Srivastava;K. Banerjee

  • 2D Semiconductor FETs—Projections and Design for Sub-10 nm VLSI

    Wei Cao;Jiahao Kang;Deblina Sarkar;Wei Liu

  • Vertical Si-Nanowire $n$ -Type Tunneling FETs With Low Subthreshold Swing ( $\leq \hbox{50}\ \hbox{mV/decade}$ ) at Room Temperature

    R Gandhi;Zhixian Chen;N Singh;K Banerjee

  • Compact AC Modeling and Performance Analysis of Through-Silicon Vias in 3-D ICs

    Chuan Xu;Hong Li;R Suaya;K Banerjee

Frequent Co-Authors

Robert W. Dutton
Robert W. Dutton Stanford University
Adrian M. Ionescu
Adrian M. Ionescu École Polytechnique Fédérale de Lausanne
Chenming Hu
Chenming Hu University of California, Berkeley
Krishna C. Saraswat
Krishna C. Saraswat Stanford University
Kazuhiko Endo
Kazuhiko Endo National Institute of Advanced Industrial Science and Technology
Vivek De
Vivek De Intel (United States)
Pulickel M. Ajayan
Pulickel M. Ajayan Rice University
Navab Singh
Navab Singh Agency for Science, Technology and Research
Kenneth E. Goodson
Kenneth E. Goodson Stanford University
Massoud Pedram
Massoud Pedram University of Southern California

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