Kazuhiko Endo mainly investigates Optoelectronics, Electronic engineering, MOSFET, Electrical engineering and Thin film. His studies deal with areas such as Semiconductor device, Work function, Tin, Etching and Threshold voltage as well as Optoelectronics. His Electronic engineering study integrates concerns from other disciplines, such as Gate length, Metal gate, Doping and Reliability.
His MOSFET research includes elements of Nanotechnology, Logic gate, Parasitic element, Node and Semiconductor device modeling. His work on Field-effect transistor, Subthreshold slope, Noise margin and Domino logic as part of general Electrical engineering research is frequently linked to Controllability, bridging the gap between disciplines. His research investigates the link between Thin film and topics such as Dielectric that cross with problems in Amorphous carbon, Plasma-enhanced chemical vapor deposition, Analytical chemistry, Carbon and Inorganic chemistry.
Kazuhiko Endo mainly focuses on Optoelectronics, MOSFET, Electrical engineering, Electronic engineering and Threshold voltage. The Optoelectronics study combines topics in areas such as Etching, Field-effect transistor, Transistor and Nanotechnology. He focuses mostly in the field of Etching, narrowing it down to topics relating to Amorphous carbon and, in certain cases, Chemical engineering and Fluorine.
His MOSFET research is multidisciplinary, relying on both Metal gate, Electron mobility, Logic gate, Parasitic element and Tin. The Integrated circuit research he does as part of his general Electrical engineering study is frequently linked to other disciplines of science, such as Communication channel and Controllability, therefore creating a link between diverse domains of science. His studies in Threshold voltage integrate themes in fields like Silicon on insulator and Gate oxide.
Kazuhiko Endo mostly deals with Optoelectronics, Transistor, Etching, Beam and Communication channel. The various areas that Kazuhiko Endo examines in his Optoelectronics study include Threshold voltage and Field-effect transistor. His Threshold voltage research is included under the broader classification of Electrical engineering.
He combines subjects such as Nanotechnology and Logic gate with his study of Transistor. He interconnects Inductively coupled plasma and Optics in the investigation of issues within Etching. His work carried out in the field of Electronic engineering brings together such families of science as Metal gate and Amplifier.
His main research concerns Optoelectronics, Transistor, Field-effect transistor, Threshold voltage and Silicon on insulator. His Optoelectronics study often links to related topics such as Electronic circuit. The subject of his Transistor research is within the realm of Electrical engineering.
His research integrates issues of Optics, Condensed matter physics, Etching, Surface roughness and Inductively coupled plasma in his study of Field-effect transistor. The study incorporates disciplines such as Amorphous solid, Tin, CMOS and Work function in addition to Threshold voltage. His Silicon on insulator research includes themes of Wafer, NMOS logic, Annealing, PMOS logic and Ion implantation.
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Method for vapor deposition of a metal compound film
Kazuhiko Endo;Motofumi Saitoh.
Fluorinated amorphous carbon thin films grown by plasma enhanced chemical vapor deposition for low dielectric constant interlayer dielectrics
Kazuhiko Endo;Toru Tatsumi.
Journal of Applied Physics (1995)
Plasma deposition of low-dielectric-constant fluorinated amorphous carbon
Kazuhiko Endo;Keisuke Shinoda;Toru Tatsumi.
Journal of Applied Physics (1999)
Grain-Orientation Induced Work Function Variation in Nanoscale Metal-Gate Transistors—Part I: Modeling, Analysis, and Experimental Validation
Hamed F Dadgour;Kazuhiko Endo;Vivek K De;K Banerjee.
IEEE Transactions on Electron Devices (2010)
Fluorinated amorphous carbon thin films grown by helicon plasma enhanced chemical vapor deposition for low dielectric constant interlayer dielectrics
Kazuhiko Endo;Toru Tatsumi.
Applied Physics Letters (1996)
Demonstration, analysis, and device design considerations for independent DG MOSFETs
M. Masahara;Yongxun Liu;K. Sakamoto;K. Endo.
IEEE Transactions on Electron Devices (2005)
Thin film forming method and a semiconductor device manufacturing method
Modeling and analysis of grain-orientation effects in emerging metal-gate devices and implications for SRAM reliability
H. Dadgour;K. Endo;V. De;K. Banerjee.
international electron devices meeting (2008)
A novel method for the 3-dimensional simulation of orthognathic surgery by using a multimodal image-fusion technique.
Jun Uechi;Miki Okayama;Takanori Shibata;Takeshi Muguruma.
American Journal of Orthodontics and Dentofacial Orthopedics (2006)
A normally-off GaN FET with high threshold voltage uniformity using a novel piezo neutralization technique
K. Ota;K. Endo;Y. Okamoto;Y. Ando.
international electron devices meeting (2009)
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