D-Index & Metrics Best Publications

D-Index & Metrics D-index (Discipline H-index) only includes papers and citation values for an examined discipline in contrast to General H-index which accounts for publications across all disciplines.

Discipline name D-index D-index (Discipline H-index) only includes papers and citation values for an examined discipline in contrast to General H-index which accounts for publications across all disciplines. Citations Publications World Ranking National Ranking
Engineering and Technology D-index 31 Citations 3,972 210 World Ranking 5422 National Ranking 111

Overview

What is he best known for?

The fields of study he is best known for:

  • Semiconductor
  • Organic chemistry
  • Electrical engineering

Kazuhiko Endo mainly investigates Optoelectronics, Electronic engineering, MOSFET, Electrical engineering and Thin film. His studies deal with areas such as Semiconductor device, Work function, Tin, Etching and Threshold voltage as well as Optoelectronics. His Electronic engineering study integrates concerns from other disciplines, such as Gate length, Metal gate, Doping and Reliability.

His MOSFET research includes elements of Nanotechnology, Logic gate, Parasitic element, Node and Semiconductor device modeling. His work on Field-effect transistor, Subthreshold slope, Noise margin and Domino logic as part of general Electrical engineering research is frequently linked to Controllability, bridging the gap between disciplines. His research investigates the link between Thin film and topics such as Dielectric that cross with problems in Amorphous carbon, Plasma-enhanced chemical vapor deposition, Analytical chemistry, Carbon and Inorganic chemistry.

His most cited work include:

  • Method for vapor deposition of a metal compound film (233 citations)
  • Fluorinated amorphous carbon thin films grown by plasma enhanced chemical vapor deposition for low dielectric constant interlayer dielectrics (149 citations)
  • Grain-Orientation Induced Work Function Variation in Nanoscale Metal-Gate Transistors—Part I: Modeling, Analysis, and Experimental Validation (121 citations)

What are the main themes of his work throughout his whole career to date?

Kazuhiko Endo mainly focuses on Optoelectronics, MOSFET, Electrical engineering, Electronic engineering and Threshold voltage. The Optoelectronics study combines topics in areas such as Etching, Field-effect transistor, Transistor and Nanotechnology. He focuses mostly in the field of Etching, narrowing it down to topics relating to Amorphous carbon and, in certain cases, Chemical engineering and Fluorine.

His MOSFET research is multidisciplinary, relying on both Metal gate, Electron mobility, Logic gate, Parasitic element and Tin. The Integrated circuit research he does as part of his general Electrical engineering study is frequently linked to other disciplines of science, such as Communication channel and Controllability, therefore creating a link between diverse domains of science. His studies in Threshold voltage integrate themes in fields like Silicon on insulator and Gate oxide.

He most often published in these fields:

  • Optoelectronics (56.67%)
  • MOSFET (25.38%)
  • Electrical engineering (18.97%)

What were the highlights of his more recent work (between 2014-2021)?

  • Optoelectronics (56.67%)
  • Transistor (14.62%)
  • Etching (12.05%)

In recent papers he was focusing on the following fields of study:

Kazuhiko Endo mostly deals with Optoelectronics, Transistor, Etching, Beam and Communication channel. The various areas that Kazuhiko Endo examines in his Optoelectronics study include Threshold voltage and Field-effect transistor. His Threshold voltage research is included under the broader classification of Electrical engineering.

He combines subjects such as Nanotechnology and Logic gate with his study of Transistor. He interconnects Inductively coupled plasma and Optics in the investigation of issues within Etching. His work carried out in the field of Electronic engineering brings together such families of science as Metal gate and Amplifier.

Between 2014 and 2021, his most popular works were:

  • Silicon nanodisk array with a fin field-effect transistor for time-domain weighted sum calculation toward massively parallel spiking neural networks (14 citations)
  • Introduction of SiGe/Si heterojunction into novel multilayer tunnel FinFET (13 citations)
  • Impacts of plasma-induced damage due to UV light irradiation during etching on Ge fin fabrication and device performance of Ge fin field-effect transistors (11 citations)

In his most recent research, the most cited papers focused on:

  • Semiconductor
  • Transistor
  • Organic chemistry

His main research concerns Optoelectronics, Transistor, Field-effect transistor, Threshold voltage and Silicon on insulator. His Optoelectronics study often links to related topics such as Electronic circuit. The subject of his Transistor research is within the realm of Electrical engineering.

His research integrates issues of Optics, Condensed matter physics, Etching, Surface roughness and Inductively coupled plasma in his study of Field-effect transistor. The study incorporates disciplines such as Amorphous solid, Tin, CMOS and Work function in addition to Threshold voltage. His Silicon on insulator research includes themes of Wafer, NMOS logic, Annealing, PMOS logic and Ion implantation.

This overview was generated by a machine learning system which analysed the scientist’s body of work. If you have any feedback, you can contact us here.

Best Publications

Method for vapor deposition of a metal compound film

Kazuhiko Endo;Motofumi Saitoh.
(2002)

349 Citations

Fluorinated amorphous carbon thin films grown by plasma enhanced chemical vapor deposition for low dielectric constant interlayer dielectrics

Kazuhiko Endo;Toru Tatsumi.
Journal of Applied Physics (1995)

252 Citations

Plasma deposition of low-dielectric-constant fluorinated amorphous carbon

Kazuhiko Endo;Keisuke Shinoda;Toru Tatsumi.
Journal of Applied Physics (1999)

190 Citations

Grain-Orientation Induced Work Function Variation in Nanoscale Metal-Gate Transistors—Part I: Modeling, Analysis, and Experimental Validation

Hamed F Dadgour;Kazuhiko Endo;Vivek K De;K Banerjee.
IEEE Transactions on Electron Devices (2010)

180 Citations

Fluorinated amorphous carbon thin films grown by helicon plasma enhanced chemical vapor deposition for low dielectric constant interlayer dielectrics

Kazuhiko Endo;Toru Tatsumi.
Applied Physics Letters (1996)

173 Citations

Demonstration, analysis, and device design considerations for independent DG MOSFETs

M. Masahara;Yongxun Liu;K. Sakamoto;K. Endo.
IEEE Transactions on Electron Devices (2005)

147 Citations

Thin film forming method and a semiconductor device manufacturing method

Kazuhiko Endo.
(2003)

128 Citations

Modeling and analysis of grain-orientation effects in emerging metal-gate devices and implications for SRAM reliability

H. Dadgour;K. Endo;V. De;K. Banerjee.
international electron devices meeting (2008)

125 Citations

A novel method for the 3-dimensional simulation of orthognathic surgery by using a multimodal image-fusion technique.

Jun Uechi;Miki Okayama;Takanori Shibata;Takeshi Muguruma.
American Journal of Orthodontics and Dentofacial Orthopedics (2006)

118 Citations

A normally-off GaN FET with high threshold voltage uniformity using a novel piezo neutralization technique

K. Ota;K. Endo;Y. Okamoto;Y. Ando.
international electron devices meeting (2009)

114 Citations

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