World's Best Scientists 2026 revealed!
Tadahiro Ohmi

Tadahiro Ohmi

D-Index & Metrics

Electronics and Electrical Engineering

D-Index
66
Citations
17054
World Ranking
1145
National Ranking
31

Materials Science

D-Index
66
Citations
17955
World Ranking
5277
National Ranking
256

Tadahiro Ohmi publication distribution in Electronics and Electrical Engineering in 2026

The chart shows the distribution of publications by all Research.com ranked scientists in the field of Electronics and Electrical Engineering in 2026. The highlighted bar marks where Tadahiro Ohmi sits on this spectrum.

34–53 publications: 24 scientists 54–73 publications: 52 scientists 74–93 publications: 114 scientists 94–113 publications: 203 scientists 114–133 publications: 269 scientists 134–153 publications: 355 scientists 154–173 publications: 403 scientists 174–193 publications: 445 scientists 194–213 publications: 430 scientists 214–233 publications: 431 scientists 234–253 publications: 399 scientists 254–273 publications: 366 scientists 274–293 publications: 335 scientists 294–313 publications: 300 scientists 314–333 publications: 276 scientists 334–353 publications: 250 scientists 354–373 publications: 214 scientists 374–393 publications: 187 scientists 394–413 publications: 152 scientists 414–433 publications: 169 scientists 434–453 publications: 147 scientists 454–473 publications: 111 scientists 474–493 publications: 117 scientists 494–513 publications: 103 scientists 514–533 publications: 99 scientists 534–553 publications: 92 scientists 554–573 publications: 75 scientists 574–593 publications: 58 scientists 594–613 publications: 69 scientists 614–633 publications: 50 scientists 634–653 publications: 62 scientists 654–673 publications: 54 scientists 674–693 publications: 44 scientists 694–713 publications: 37 scientists 714–733 publications: 28 scientists 734–753 publications: 26 scientists 754–773 publications: 26 scientists 774–793 publications: 19 scientists 794–813 publications: 23 scientists 814–833 publications: 20 scientists 834–853 publications: 16 scientists 854–873 publications: 20 scientists 874–893 publications: 11 scientists 894–913 publications: 11 scientists 914–933 publications: 16 scientists 934–953 publications: 13 scientists 954–973 publications: 10 scientists 974–993 publications: 11 scientists 994–1,013 publications: 9 scientists 1,014–1,033 publications: 9 scientists 1,034–1,053 publications: 10 scientists 1,054–1,064 publications: 6 scientists 1,065+ publications: 99 scientists
34 publications 1,065+

This scientist: 1,027 publications — 98th percentile

98% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 1,065 publications or more.

Tadahiro Ohmi D-index placement in Electronics and Electrical Engineering in 2026

The chart shows the D-index (discipline H-index) distribution of Electronics and Electrical Engineering scientists ranked by Research.com in 2026. The highlighted bar marks where Tadahiro Ohmi sits on this spectrum.

30 D-Index: 178 scientists 31 D-Index: 257 scientists 32 D-Index: 263 scientists 33 D-Index: 262 scientists 34 D-Index: 244 scientists 35 D-Index: 236 scientists 36 D-Index: 211 scientists 37 D-Index: 220 scientists 38 D-Index: 214 scientists 39 D-Index: 214 scientists 40 D-Index: 205 scientists 41 D-Index: 187 scientists 42 D-Index: 194 scientists 43 D-Index: 201 scientists 44 D-Index: 155 scientists 45 D-Index: 189 scientists 46 D-Index: 148 scientists 47 D-Index: 160 scientists 48 D-Index: 134 scientists 49 D-Index: 130 scientists 50 D-Index: 141 scientists 51 D-Index: 156 scientists 52 D-Index: 108 scientists 53 D-Index: 130 scientists 54 D-Index: 112 scientists 55 D-Index: 97 scientists 56 D-Index: 111 scientists 57 D-Index: 102 scientists 58 D-Index: 108 scientists 59 D-Index: 120 scientists 60 D-Index: 103 scientists 61 D-Index: 93 scientists 62 D-Index: 92 scientists 63 D-Index: 74 scientists 64 D-Index: 77 scientists 65 D-Index: 73 scientists 66 D-Index: 64 scientists 67 D-Index: 69 scientists 68 D-Index: 60 scientists 69 D-Index: 39 scientists 70 D-Index: 57 scientists 71 D-Index: 59 scientists 72 D-Index: 46 scientists 73 D-Index: 49 scientists 74 D-Index: 38 scientists 75 D-Index: 35 scientists 76 D-Index: 32 scientists 77 D-Index: 35 scientists 78 D-Index: 31 scientists 79 D-Index: 22 scientists 80 D-Index: 34 scientists 81 D-Index: 31 scientists 82 D-Index: 34 scientists 83 D-Index: 23 scientists 84 D-Index: 18 scientists 85 D-Index: 30 scientists 86 D-Index: 19 scientists 87 D-Index: 19 scientists 88 D-Index: 20 scientists 89 D-Index: 8 scientists 90 D-Index: 17 scientists 91 D-Index: 7 scientists 92 D-Index: 14 scientists 93 D-Index: 9 scientists 94 D-Index: 15 scientists 95 D-Index: 10 scientists 96 D-Index: 12 scientists 97 D-Index: 10 scientists 98 D-Index: 10 scientists 99 D-Index: 12 scientists 100 D-Index: 16 scientists 101 D-Index: 5 scientists 102 D-Index: 7 scientists 103 D-Index: 7 scientists 104 D-Index: 8 scientists 105 D-Index: 9 scientists 106 D-Index: 13 scientists 107 D-Index: 4 scientists 108 D-Index: 5 scientists 109 D-Index: 10 scientists 110 D-Index: 8 scientists 111+ D-Index: 96 scientists
30 D-Index 111+

This scientist: 66 D-Index — 84th percentile

84% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 111 D-Index or more.

Overview

Tadahiro Ohmi is affiliated with Tohoku University in Japan. Their academic profile does not include recent papers, frequent co-authors, or a record of publication venues and book publications at this time.

No detailed information is available about their main fields of study, subfields of study, or specific topics of research focus. Additionally, there are no documented awards or honors associated with Tadahiro Ohmi in the source data provided.

The absence of specific data on research outputs suggests that publicly accessible records or bibliometric databases may not currently reflect detailed contributions for this researcher. However, the association with Tohoku University situates them within a significant academic institution in Japan, which is notable for scientific and engineering research.

This profile is based entirely on the available data, which offers a concise overview without elaborations beyond the confirmed details.

Best Publications

  • Growth of native oxide on a silicon surface

    M. Morita;T. Ohmi;E. Hasegawa;M. Kawakami

  • A functional MOS transistor featuring gate-level weighted sum and threshold operations

    T. Shibata;T. Ohmi

  • Dependence of thin-oxide films quality on surface microroughness

    T. Ohmi;M. Miyashita;M. Itano;T. Imaoka

  • Dual excitation reactive ion etcher for low energy plasma processing

    Haruhiro H. Goto;Hans‐Dirk Löwe;Tadahiro Ohmi

  • Method of forming a dielectic film that contains silicon, oxygen and nitrogen and method of fabricating a semiconductor device that uses such a dielectric film

    Tadahiro Ohmi;Shigetoshi Sugawa;Masaki Hirayama;Yasuyuki Shirai

  • Total Room Temperature Wet Cleaning for Si Substrate Surface

    Tadahiro Ohmi

  • Mechanism of Metallic Particle Growth and Metal‐Induced Pitting on Si Wafer Surface in Wet Chemical Processing

    Hitoshi Morinaga;Makoto Suyama;Tadahiro Ohmi

  • Neuron MOS binary-logic integrated circuits. I. Design fundamentals and soft-hardware-logic circuit implementation

    T. Shibata;T. Ohmi

  • Dependence of electron channel mobility on Si-SiO/sub 2/ interface microroughness

    T. Ohmi;K. Kotani;A. Teramoto;M. Miyashita

  • Neuron MOS binary-logic integrated circuits. II. Simplifying techniques of circuit configuration and their practical applications

    T. Shibata;T. Ohmi

  • Low-temperature silicon selective deposition and epitaxy on silicon using the thermal decomposition of silane under ultraclean environment

    Junichi Murota;Naoto Nakamura;Manabu Kato;Nobuo Mikoshiba

  • SEMICONDUCTOR MANUFACTURING DEVICE

    Nishizawa Jiyunichi;Oomi Tadahiro

  • Particle removal from silicon wafer surface in wet cleaning process

    M. Itano;F.W. Kern;M. Miyashita;T. Ohmi

  • An intelligent MOS transistor featuring gate-level weighted sum and threshold operations

    T. Shibata;T. Ohmi

  • Clocked-neuron-MOS logic circuits employing auto-threshold-adjustment

    K. Kotani;T. Shibata;M. Imai;T. Ohmi

  • Formation of device‐grade epitaxial silicon films at extremely low temperatures by low‐energy bias sputtering

    T. Ohmi;T. Ichikawa;H. Iwabuchi;T. Shibata

  • Ultra‐low‐temperature growth of high‐integrity gate oxide films by low‐energy ion‐assisted oxidation

    Y. Kawai;N. Konishi;J. Watanabe;T. Ohmi

  • Evaluating the Large Electromigration Resistance of Copper Interconnects Employing a Newly Developed Accelerated Life‐Test Method

    Takahisa Nitta;Tadahiro Ohmi;Tsukasa Hoshi;Satoshi Sakai

  • Independent control of ion density and ion bombardment energy in a dual RF excitation plasma

    H.H. Goto;H.-D. Lowe;T. Ohmi

  • Highly reliable ultrathin silicon oxide film formation at low temperature by oxygen radical generated in high-density krypton plasma

    K. Sekine;Y. Saito;M. Hirayama;T. Ohmi

  • High Permeability and Low Loss Ni–Fe Composite Material for High-Frequency Applications

    Y. Shirakata;N. Hidaka;M. Ishitsuka;A. Teramoto

Frequent Co-Authors

Shigetoshi Sugawa
Shigetoshi Sugawa Tohoku University
Jun-ichi Nishizawa
Jun-ichi Nishizawa Tohoku University
Kiyoshi Ohishi
Kiyoshi Ohishi Nagaoka University of Technology

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