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Tadahiro Ohmi

Tadahiro Ohmi

D-Index & Metrics

Electronics and Electrical Engineering

D-Index
66
Citations
17054
World Ranking
1145
National Ranking
31

Materials Science

D-Index
66
Citations
17955
World Ranking
5279
National Ranking
256

Overview

Tadahiro Ohmi is affiliated with Tohoku University in Japan. Their academic profile does not include recent papers, frequent co-authors, or a record of publication venues and book publications at this time.

No detailed information is available about their main fields of study, subfields of study, or specific topics of research focus. Additionally, there are no documented awards or honors associated with Tadahiro Ohmi in the source data provided.

The absence of specific data on research outputs suggests that publicly accessible records or bibliometric databases may not currently reflect detailed contributions for this researcher. However, the association with Tohoku University situates them within a significant academic institution in Japan, which is notable for scientific and engineering research.

This profile is based entirely on the available data, which offers a concise overview without elaborations beyond the confirmed details.

Best Publications

  • Growth of native oxide on a silicon surface

    M. Morita;T. Ohmi;E. Hasegawa;M. Kawakami

  • A functional MOS transistor featuring gate-level weighted sum and threshold operations

    T. Shibata;T. Ohmi

  • Dependence of thin-oxide films quality on surface microroughness

    T. Ohmi;M. Miyashita;M. Itano;T. Imaoka

  • Dual excitation reactive ion etcher for low energy plasma processing

    Haruhiro H. Goto;Hans‐Dirk Löwe;Tadahiro Ohmi

  • Method of forming a dielectic film that contains silicon, oxygen and nitrogen and method of fabricating a semiconductor device that uses such a dielectric film

    Tadahiro Ohmi;Shigetoshi Sugawa;Masaki Hirayama;Yasuyuki Shirai

  • Total Room Temperature Wet Cleaning for Si Substrate Surface

    Tadahiro Ohmi

  • Mechanism of Metallic Particle Growth and Metal‐Induced Pitting on Si Wafer Surface in Wet Chemical Processing

    Hitoshi Morinaga;Makoto Suyama;Tadahiro Ohmi

  • Neuron MOS binary-logic integrated circuits. I. Design fundamentals and soft-hardware-logic circuit implementation

    T. Shibata;T. Ohmi

  • Dependence of electron channel mobility on Si-SiO/sub 2/ interface microroughness

    T. Ohmi;K. Kotani;A. Teramoto;M. Miyashita

  • Neuron MOS binary-logic integrated circuits. II. Simplifying techniques of circuit configuration and their practical applications

    T. Shibata;T. Ohmi

  • Low-temperature silicon selective deposition and epitaxy on silicon using the thermal decomposition of silane under ultraclean environment

    Junichi Murota;Naoto Nakamura;Manabu Kato;Nobuo Mikoshiba

  • SEMICONDUCTOR MANUFACTURING DEVICE

    Nishizawa Jiyunichi;Oomi Tadahiro

  • Particle removal from silicon wafer surface in wet cleaning process

    M. Itano;F.W. Kern;M. Miyashita;T. Ohmi

  • An intelligent MOS transistor featuring gate-level weighted sum and threshold operations

    T. Shibata;T. Ohmi

  • Clocked-neuron-MOS logic circuits employing auto-threshold-adjustment

    K. Kotani;T. Shibata;M. Imai;T. Ohmi

  • Formation of device‐grade epitaxial silicon films at extremely low temperatures by low‐energy bias sputtering

    T. Ohmi;T. Ichikawa;H. Iwabuchi;T. Shibata

  • Ultra‐low‐temperature growth of high‐integrity gate oxide films by low‐energy ion‐assisted oxidation

    Y. Kawai;N. Konishi;J. Watanabe;T. Ohmi

  • Evaluating the Large Electromigration Resistance of Copper Interconnects Employing a Newly Developed Accelerated Life‐Test Method

    Takahisa Nitta;Tadahiro Ohmi;Tsukasa Hoshi;Satoshi Sakai

  • Independent control of ion density and ion bombardment energy in a dual RF excitation plasma

    H.H. Goto;H.-D. Lowe;T. Ohmi

  • Highly reliable ultrathin silicon oxide film formation at low temperature by oxygen radical generated in high-density krypton plasma

    K. Sekine;Y. Saito;M. Hirayama;T. Ohmi

  • High Permeability and Low Loss Ni–Fe Composite Material for High-Frequency Applications

    Y. Shirakata;N. Hidaka;M. Ishitsuka;A. Teramoto

Frequent Co-Authors

Shigetoshi Sugawa
Shigetoshi Sugawa Tohoku University
Jun-ichi Nishizawa
Jun-ichi Nishizawa Tohoku University
Kiyoshi Ohishi
Kiyoshi Ohishi Nagaoka University of Technology

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