The scientist’s investigation covers issues in Optoelectronics, Electrical engineering, Pixel, Transistor and Solid-state. Shigetoshi Sugawa has included themes like Layer, Semiconductor device and Electrical conductor in his Optoelectronics study. His work carried out in the field of Electrical engineering brings together such families of science as Image sensor and Reading.
The concepts of his Pixel study are interwoven with issues in Substrate, Computer hardware, Photodiode and Signal processing. His work in Photodiode tackles topics such as Sensitivity which are related to areas like Wide dynamic range and Capacitance. His Transistor research is multidisciplinary, incorporating perspectives in Silicon on insulator and Photoelectric effect.
His primary scientific interests are in Optoelectronics, Image sensor, Electrical engineering, Pixel and CMOS. His Optoelectronics study integrates concerns from other disciplines, such as Field-effect transistor and Transistor. Shigetoshi Sugawa works mostly in the field of Transistor, limiting it down to concerns involving Noise and, occasionally, Time constant and Amplitude.
His Image sensor research focuses on subjects like Capacitor, which are linked to Electronic engineering. His Capacitance research extends to Electrical engineering, which is thematically connected. Specifically, his work in Pixel is concerned with the study of CMOS sensor.
Shigetoshi Sugawa mostly deals with Optoelectronics, Image sensor, CMOS, Pixel and Optics. Many of his studies on Optoelectronics involve topics that are commonly interrelated, such as Transistor. His study focuses on the intersection of Transistor and fields such as Noise with connections in the field of Resistor.
His Image sensor research is multidisciplinary, incorporating elements of Wide dynamic range, Dynamic range, Electronic engineering, Shutter and Capacitor. His study with CMOS involves better knowledge in Electrical engineering. His Absorption research incorporates elements of Wavelength and Signal.
His scientific interests lie mostly in Image sensor, Optoelectronics, Optics, Shutter and Capacitor. Shigetoshi Sugawa interconnects Pixel, Electronic engineering, CMOS, Electrical engineering and Quantum efficiency in the investigation of issues within Image sensor. His studies in Optoelectronics integrate themes in fields like Annealing and Atomic layer deposition.
His Annealing course of study focuses on Laser and Transistor. His work on Absorption as part of his general Optics study is frequently connected to Scale, thereby bridging the divide between different branches of science. His research integrates issues of Trench and Dynamic range in his study of Capacitor.
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Solid-state image pickup apparatus
Katsuhito Sakurai;Shigetoshi Sugawa;Hideyuki Arai;Isamu Ueno.
A 100 dB dynamic range CMOS image sensor using a lateral overflow integration capacitor
S. Sugawa;N. Akahane;S. Adachi;K. Mori.
international solid-state circuits conference (2005)
Image sensing device using MOS-type image sensing element whose threshold voltage of charge transfer switch and reset switch is different from that of signal output transistor
Tetsunobu Kochi;Naritoshi Sugawa;Isamu Ueno.
Solid-state image pickup device having a plurality of photoelectric conversion elements on a common substrate
Hayao Oozu;Mamoru Miyawaki;Akira Ishizaki;Shigetoshi Sugawa.
A sensitivity and linearity improvement of a 100-dB dynamic range CMOS image sensor using a lateral overflow integration capacitor
N. Akahane;S. Sugawa;S. Adachi;K. Mori.
IEEE Journal of Solid-state Circuits (2006)
Silicon-on-insulator CMOS device and a liquid crystal display with controlled base insulator thickness
Shunsuke Inoue;Toru Koizuki;Mamoru Miyawaki;Shigetoshi Sugawa.
Liquid crystal image display unit and method for fabricating semiconductor optical member
Takao Yonehara;Mamoru Miyawaki;Akira Ishizaki;Junichi Hoshi.
A Global-Shutter CMOS Image Sensor With Readout Speed of 1-Tpixel/s Burst and 780-Mpixel/s Continuous
Yasuhisa Tochigi;Katsuhiko Hanzawa;Yuri Kato;Rihito Kuroda.
international solid-state circuits conference (2012)
Amplification-type solid state imaging device with reduced shading
Tomoya Yoneda;Shigetoshi Sugawa;Toru Koizumi;Tetsunobu Kochi.
Semiconductor device formed on (111) surface of a Si crystal and fabrication process thereof
Tadahiro Ohmi;Shigetoshi Sugawa;Katsuyuki Sekine;Yuji Saito.
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