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Shigetoshi Sugawa

Shigetoshi Sugawa

D-Index & Metrics

Electronics and Electrical Engineering

D-Index
41
Citations
6900
World Ranking
4295
National Ranking
165

Overview

Shigetoshi Sugawa is affiliated with Tohoku University in Japan. Their primary field of study is Engineering, with a particular focus on Electrical and Electronic Engineering, Bioengineering, Materials Chemistry, Biomedical Engineering, and Computational Mechanics.

The scientist's main research topics include:

  • CCD and CMOS Imaging Sensors
  • Semiconductor materials and devices
  • Analytical Chemistry and Sensors
  • Minerals Flotation and Separation Techniques
  • Integrated Circuits and Semiconductor Failure Analysis
  • Advancements in Semiconductor Devices and Circuit Design
  • Surface Roughness and Optical Measurements

Their recent publications highlight a range of subjects mostly centered on sensor technology and materials science. Selected papers include:

  • "Free-Radical Generation from Bulk Nanobubbles in Aqueous Electrolyte Solutions: ESR Spin-Trap Observation of Microbubble-Treated Water" (2021), published in Langmuir
  • "Influence of silicon wafer surface roughness on semiconductor device characteristics" (2020), published in Japanese Journal of Applied Physics
  • "An Over 120 dB Single Exposure Wide Dynamic Range CMOS Image Sensor With Two-Stage Lateral Overflow Integration Capacitor" (2020), published in IEEE Transactions on Electron Devices
  • "Over 100 Million Frames per Second 368 Frames Global Shutter Burst CMOS Image Sensor with Pixel-wise Trench Capacitor Memory Array" (2020), published in Sensors
  • "A High Near-Infrared Sensitivity Over 70-dB SNR CMOS Image Sensor With Lateral Overflow Integration Trench Capacitor" (2020), published in IEEE Transactions on Electron Devices

Frequent collaborators in research include Rihito Kuroda, Akinobu Teramoto, Yasuyuki Shirai, Tomoyuki Suwa, and Tetsuya Goto. These partnerships suggest active involvement in collaborative projects within related fields.

The scientist regularly publishes in several venues, with a concentration of work appearing in:

  • Japanese Journal of Applied Physics
  • Journal of Vacuum Science & Technology A Vacuum Surfaces and Films
  • IEEE Transactions on Electron Devices
  • ITE Transactions on Media Technology and Applications
  • Langmuir

Best Publications

  • Solid-state image pickup apparatus

    Katsuhito Sakurai;Shigetoshi Sugawa;Hideyuki Arai;Isamu Ueno

  • A sensitivity and linearity improvement of a 100-dB dynamic range CMOS image sensor using a lateral overflow integration capacitor

    N. Akahane;S. Sugawa;S. Adachi;K. Mori

  • A 100 dB dynamic range CMOS image sensor using a lateral overflow integration capacitor

    S. Sugawa;N. Akahane;S. Adachi;K. Mori

  • Solid-state image pickup device having a plurality of photoelectric conversion elements on a common substrate

    Hayao Oozu;Mamoru Miyawaki;Akira Ishizaki;Shigetoshi Sugawa

  • A Global-Shutter CMOS Image Sensor With Readout Speed of 1-Tpixel/s Burst and 780-Mpixel/s Continuous

    Yasuhisa Tochigi;Katsuhiko Hanzawa;Yuri Kato;Rihito Kuroda

  • Silicon-on-insulator CMOS device and a liquid crystal display with controlled base insulator thickness

    Shunsuke Inoue;Toru Koizuki;Mamoru Miyawaki;Shigetoshi Sugawa

  • Liquid crystal image display unit and method for fabricating semiconductor optical member

    Takao Yonehara;Mamoru Miyawaki;Akira Ishizaki;Junichi Hoshi

  • Amplification-type solid state imaging device with reduced shading

    Tomoya Yoneda;Shigetoshi Sugawa;Toru Koizumi;Tetsunobu Kochi

  • Semiconductor device formed on (111) surface of a Si crystal and fabrication process thereof

    Tadahiro Ohmi;Shigetoshi Sugawa;Katsuyuki Sekine;Yuji Saito

  • Solid-state image pickup device using layers having different refractive indices

    Tetsunobu Kochi;Shigetoshi Sugawa;Isamu Ueno;Katsuhisa Ogawa

  • Very High Carrier Mobility for High-Performance CMOS on a Si(110) Surface

    A. Teramoto;T. Hamada;M. Yamamoto;P. Gaubert

  • Photoelectric conversion apparatus with reresh voltage

    Mahito Shinohara;Shigetoshi Sugawa;Seiji Hashimoto;Mamoru Miyawaki

  • Solid-state image pickup element

    Isamu Ueno;Shigetoshi Sugawa;Katsuhisa Ogawa;Toru Koizumi

  • Solid-State Imaging Device, Optical Sensor and Method of Operating Solid-State Imaging Device

    Shigetoshi Sugawa;Satoru Adachi;Kyoichi Yahata;Tatsuya Terada

  • Solid-state imaging device, optical sensor, and solid-state imaging device operation method

    Shigetoshi Sugawa;Satoru Adachi;Kyoichi Yahata;Tatsuya Terada

  • Atomically Flat Silicon Surface and Silicon/Insulator Interface Formation Technologies for (100) Surface Orientation Large-Diameter Wafers Introducing High Performance and Low-Noise Metal–Insulator–Silicon FETs

    R. Kuroda;T. Suwa;A. Teramoto;R. Hasebe

  • Optical Sensor, Solid-State Imaging Device, and Operating Method of Solid-State Imaging Device

    Shigetoshi Sugawa;Nana Akahane

  • A parallel vector quantization processor eliminating redundant calculations for real-time motion picture compression

    T. Nozawa;M. Konda;M. Fujibayashi;M. Imai

  • Image sensing apparatus arranged on a single substrate

    Toru Koizumi;Shigetoshi Sugawa;Isamu Ueno;Katsuhisa Ogawa

  • Advantage of radical oxidation for improving reliability of ultra-thin gate oxide

    Y. Saito;K. Sekine;N. Ueda;M. Hirayama

Frequent Co-Authors

Tadahiro Ohmi
Tadahiro Ohmi Tohoku University
Mamoru Miyawaki
Mamoru Miyawaki Canon (Japan)
Keisuke Kobayashi
Keisuke Kobayashi Japan Atomic Energy Agency

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