World's Best Scientists 2026 revealed!
Shigetoshi Sugawa

Shigetoshi Sugawa

D-Index & Metrics

Electronics and Electrical Engineering

D-Index
41
Citations
6900
World Ranking
4295
National Ranking
165

Shigetoshi Sugawa publication distribution in Electronics and Electrical Engineering in 2026

The chart shows the distribution of publications by all Research.com ranked scientists in the field of Electronics and Electrical Engineering in 2026. The highlighted bar marks where Shigetoshi Sugawa sits on this spectrum.

34–53 publications: 24 scientists 54–73 publications: 52 scientists 74–93 publications: 114 scientists 94–113 publications: 203 scientists 114–133 publications: 269 scientists 134–153 publications: 355 scientists 154–173 publications: 403 scientists 174–193 publications: 445 scientists 194–213 publications: 430 scientists 214–233 publications: 431 scientists 234–253 publications: 399 scientists 254–273 publications: 366 scientists 274–293 publications: 335 scientists 294–313 publications: 300 scientists 314–333 publications: 276 scientists 334–353 publications: 250 scientists 354–373 publications: 214 scientists 374–393 publications: 187 scientists 394–413 publications: 152 scientists 414–433 publications: 169 scientists 434–453 publications: 147 scientists 454–473 publications: 111 scientists 474–493 publications: 117 scientists 494–513 publications: 103 scientists 514–533 publications: 99 scientists 534–553 publications: 92 scientists 554–573 publications: 75 scientists 574–593 publications: 58 scientists 594–613 publications: 69 scientists 614–633 publications: 50 scientists 634–653 publications: 62 scientists 654–673 publications: 54 scientists 674–693 publications: 44 scientists 694–713 publications: 37 scientists 714–733 publications: 28 scientists 734–753 publications: 26 scientists 754–773 publications: 26 scientists 774–793 publications: 19 scientists 794–813 publications: 23 scientists 814–833 publications: 20 scientists 834–853 publications: 16 scientists 854–873 publications: 20 scientists 874–893 publications: 11 scientists 894–913 publications: 11 scientists 914–933 publications: 16 scientists 934–953 publications: 13 scientists 954–973 publications: 10 scientists 974–993 publications: 11 scientists 994–1,013 publications: 9 scientists 1,014–1,033 publications: 9 scientists 1,034–1,053 publications: 10 scientists 1,054–1,064 publications: 6 scientists 1,065+ publications: 99 scientists
34 publications 1,065+

This scientist: 571 publications — 89th percentile

89% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 1,065 publications or more.

Shigetoshi Sugawa D-index placement in Electronics and Electrical Engineering in 2026

The chart shows the D-index (discipline H-index) distribution of Electronics and Electrical Engineering scientists ranked by Research.com in 2026. The highlighted bar marks where Shigetoshi Sugawa sits on this spectrum.

30 D-Index: 178 scientists 31 D-Index: 257 scientists 32 D-Index: 263 scientists 33 D-Index: 262 scientists 34 D-Index: 244 scientists 35 D-Index: 236 scientists 36 D-Index: 211 scientists 37 D-Index: 220 scientists 38 D-Index: 214 scientists 39 D-Index: 214 scientists 40 D-Index: 205 scientists 41 D-Index: 187 scientists 42 D-Index: 194 scientists 43 D-Index: 201 scientists 44 D-Index: 155 scientists 45 D-Index: 189 scientists 46 D-Index: 148 scientists 47 D-Index: 160 scientists 48 D-Index: 134 scientists 49 D-Index: 130 scientists 50 D-Index: 141 scientists 51 D-Index: 156 scientists 52 D-Index: 108 scientists 53 D-Index: 130 scientists 54 D-Index: 112 scientists 55 D-Index: 97 scientists 56 D-Index: 111 scientists 57 D-Index: 102 scientists 58 D-Index: 108 scientists 59 D-Index: 120 scientists 60 D-Index: 103 scientists 61 D-Index: 93 scientists 62 D-Index: 92 scientists 63 D-Index: 74 scientists 64 D-Index: 77 scientists 65 D-Index: 73 scientists 66 D-Index: 64 scientists 67 D-Index: 69 scientists 68 D-Index: 60 scientists 69 D-Index: 39 scientists 70 D-Index: 57 scientists 71 D-Index: 59 scientists 72 D-Index: 46 scientists 73 D-Index: 49 scientists 74 D-Index: 38 scientists 75 D-Index: 35 scientists 76 D-Index: 32 scientists 77 D-Index: 35 scientists 78 D-Index: 31 scientists 79 D-Index: 22 scientists 80 D-Index: 34 scientists 81 D-Index: 31 scientists 82 D-Index: 34 scientists 83 D-Index: 23 scientists 84 D-Index: 18 scientists 85 D-Index: 30 scientists 86 D-Index: 19 scientists 87 D-Index: 19 scientists 88 D-Index: 20 scientists 89 D-Index: 8 scientists 90 D-Index: 17 scientists 91 D-Index: 7 scientists 92 D-Index: 14 scientists 93 D-Index: 9 scientists 94 D-Index: 15 scientists 95 D-Index: 10 scientists 96 D-Index: 12 scientists 97 D-Index: 10 scientists 98 D-Index: 10 scientists 99 D-Index: 12 scientists 100 D-Index: 16 scientists 101 D-Index: 5 scientists 102 D-Index: 7 scientists 103 D-Index: 7 scientists 104 D-Index: 8 scientists 105 D-Index: 9 scientists 106 D-Index: 13 scientists 107 D-Index: 4 scientists 108 D-Index: 5 scientists 109 D-Index: 10 scientists 110 D-Index: 8 scientists 111+ D-Index: 96 scientists
30 D-Index 111+

This scientist: 41 D-Index — 39th percentile

39% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 111 D-Index or more.

Overview

Shigetoshi Sugawa is affiliated with Tohoku University in Japan. Their primary field of study is Engineering, with a particular focus on Electrical and Electronic Engineering, Bioengineering, Materials Chemistry, Biomedical Engineering, and Computational Mechanics.

The scientist's main research topics include:

  • CCD and CMOS Imaging Sensors
  • Semiconductor materials and devices
  • Analytical Chemistry and Sensors
  • Minerals Flotation and Separation Techniques
  • Integrated Circuits and Semiconductor Failure Analysis
  • Advancements in Semiconductor Devices and Circuit Design
  • Surface Roughness and Optical Measurements

Their recent publications highlight a range of subjects mostly centered on sensor technology and materials science. Selected papers include:

  • "Free-Radical Generation from Bulk Nanobubbles in Aqueous Electrolyte Solutions: ESR Spin-Trap Observation of Microbubble-Treated Water" (2021), published in Langmuir
  • "Influence of silicon wafer surface roughness on semiconductor device characteristics" (2020), published in Japanese Journal of Applied Physics
  • "An Over 120 dB Single Exposure Wide Dynamic Range CMOS Image Sensor With Two-Stage Lateral Overflow Integration Capacitor" (2020), published in IEEE Transactions on Electron Devices
  • "Over 100 Million Frames per Second 368 Frames Global Shutter Burst CMOS Image Sensor with Pixel-wise Trench Capacitor Memory Array" (2020), published in Sensors
  • "A High Near-Infrared Sensitivity Over 70-dB SNR CMOS Image Sensor With Lateral Overflow Integration Trench Capacitor" (2020), published in IEEE Transactions on Electron Devices

Frequent collaborators in research include Rihito Kuroda, Akinobu Teramoto, Yasuyuki Shirai, Tomoyuki Suwa, and Tetsuya Goto. These partnerships suggest active involvement in collaborative projects within related fields.

The scientist regularly publishes in several venues, with a concentration of work appearing in:

  • Japanese Journal of Applied Physics
  • Journal of Vacuum Science & Technology A Vacuum Surfaces and Films
  • IEEE Transactions on Electron Devices
  • ITE Transactions on Media Technology and Applications
  • Langmuir

Best Publications

  • Solid-state image pickup apparatus

    Katsuhito Sakurai;Shigetoshi Sugawa;Hideyuki Arai;Isamu Ueno

  • A sensitivity and linearity improvement of a 100-dB dynamic range CMOS image sensor using a lateral overflow integration capacitor

    N. Akahane;S. Sugawa;S. Adachi;K. Mori

  • A 100 dB dynamic range CMOS image sensor using a lateral overflow integration capacitor

    S. Sugawa;N. Akahane;S. Adachi;K. Mori

  • Solid-state image pickup device having a plurality of photoelectric conversion elements on a common substrate

    Hayao Oozu;Mamoru Miyawaki;Akira Ishizaki;Shigetoshi Sugawa

  • A Global-Shutter CMOS Image Sensor With Readout Speed of 1-Tpixel/s Burst and 780-Mpixel/s Continuous

    Yasuhisa Tochigi;Katsuhiko Hanzawa;Yuri Kato;Rihito Kuroda

  • Silicon-on-insulator CMOS device and a liquid crystal display with controlled base insulator thickness

    Shunsuke Inoue;Toru Koizuki;Mamoru Miyawaki;Shigetoshi Sugawa

  • Liquid crystal image display unit and method for fabricating semiconductor optical member

    Takao Yonehara;Mamoru Miyawaki;Akira Ishizaki;Junichi Hoshi

  • Amplification-type solid state imaging device with reduced shading

    Tomoya Yoneda;Shigetoshi Sugawa;Toru Koizumi;Tetsunobu Kochi

  • Semiconductor device formed on (111) surface of a Si crystal and fabrication process thereof

    Tadahiro Ohmi;Shigetoshi Sugawa;Katsuyuki Sekine;Yuji Saito

  • Solid-state image pickup device using layers having different refractive indices

    Tetsunobu Kochi;Shigetoshi Sugawa;Isamu Ueno;Katsuhisa Ogawa

  • Very High Carrier Mobility for High-Performance CMOS on a Si(110) Surface

    A. Teramoto;T. Hamada;M. Yamamoto;P. Gaubert

  • Photoelectric conversion apparatus with reresh voltage

    Mahito Shinohara;Shigetoshi Sugawa;Seiji Hashimoto;Mamoru Miyawaki

  • Solid-state image pickup element

    Isamu Ueno;Shigetoshi Sugawa;Katsuhisa Ogawa;Toru Koizumi

  • Solid-State Imaging Device, Optical Sensor and Method of Operating Solid-State Imaging Device

    Shigetoshi Sugawa;Satoru Adachi;Kyoichi Yahata;Tatsuya Terada

  • Solid-state imaging device, optical sensor, and solid-state imaging device operation method

    Shigetoshi Sugawa;Satoru Adachi;Kyoichi Yahata;Tatsuya Terada

  • Atomically Flat Silicon Surface and Silicon/Insulator Interface Formation Technologies for (100) Surface Orientation Large-Diameter Wafers Introducing High Performance and Low-Noise Metal–Insulator–Silicon FETs

    R. Kuroda;T. Suwa;A. Teramoto;R. Hasebe

  • Optical Sensor, Solid-State Imaging Device, and Operating Method of Solid-State Imaging Device

    Shigetoshi Sugawa;Nana Akahane

  • A parallel vector quantization processor eliminating redundant calculations for real-time motion picture compression

    T. Nozawa;M. Konda;M. Fujibayashi;M. Imai

  • Image sensing apparatus arranged on a single substrate

    Toru Koizumi;Shigetoshi Sugawa;Isamu Ueno;Katsuhisa Ogawa

  • Advantage of radical oxidation for improving reliability of ultra-thin gate oxide

    Y. Saito;K. Sekine;N. Ueda;M. Hirayama

Frequent Co-Authors

Tadahiro Ohmi
Tadahiro Ohmi Tohoku University
Mamoru Miyawaki
Mamoru Miyawaki Canon (Japan)
Keisuke Kobayashi
Keisuke Kobayashi Japan Atomic Energy Agency

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