World's Best Scientists 2026 revealed!
Toru Tatsumi

Toru Tatsumi

D-Index & Metrics

Electronics and Electrical Engineering

D-Index
30
Citations
3380
World Ranking
6837
National Ranking
296

Toru Tatsumi publication distribution in Electronics and Electrical Engineering in 2026

The chart shows the distribution of publications by all Research.com ranked scientists in the field of Electronics and Electrical Engineering in 2026. The highlighted bar marks where Toru Tatsumi sits on this spectrum.

34–53 publications: 24 scientists 54–73 publications: 52 scientists 74–93 publications: 114 scientists 94–113 publications: 203 scientists 114–133 publications: 269 scientists 134–153 publications: 355 scientists 154–173 publications: 403 scientists 174–193 publications: 445 scientists 194–213 publications: 430 scientists 214–233 publications: 431 scientists 234–253 publications: 399 scientists 254–273 publications: 366 scientists 274–293 publications: 335 scientists 294–313 publications: 300 scientists 314–333 publications: 276 scientists 334–353 publications: 250 scientists 354–373 publications: 214 scientists 374–393 publications: 187 scientists 394–413 publications: 152 scientists 414–433 publications: 169 scientists 434–453 publications: 147 scientists 454–473 publications: 111 scientists 474–493 publications: 117 scientists 494–513 publications: 103 scientists 514–533 publications: 99 scientists 534–553 publications: 92 scientists 554–573 publications: 75 scientists 574–593 publications: 58 scientists 594–613 publications: 69 scientists 614–633 publications: 50 scientists 634–653 publications: 62 scientists 654–673 publications: 54 scientists 674–693 publications: 44 scientists 694–713 publications: 37 scientists 714–733 publications: 28 scientists 734–753 publications: 26 scientists 754–773 publications: 26 scientists 774–793 publications: 19 scientists 794–813 publications: 23 scientists 814–833 publications: 20 scientists 834–853 publications: 16 scientists 854–873 publications: 20 scientists 874–893 publications: 11 scientists 894–913 publications: 11 scientists 914–933 publications: 16 scientists 934–953 publications: 13 scientists 954–973 publications: 10 scientists 974–993 publications: 11 scientists 994–1,013 publications: 9 scientists 1,014–1,033 publications: 9 scientists 1,034–1,053 publications: 10 scientists 1,054–1,064 publications: 6 scientists 1,065+ publications: 99 scientists
34 publications 1,065+

This scientist: 127 publications — 8th percentile

8% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 1,065 publications or more.

Toru Tatsumi D-index placement in Electronics and Electrical Engineering in 2026

The chart shows the D-index (discipline H-index) distribution of Electronics and Electrical Engineering scientists ranked by Research.com in 2026. The highlighted bar marks where Toru Tatsumi sits on this spectrum.

30 D-Index: 178 scientists 31 D-Index: 257 scientists 32 D-Index: 263 scientists 33 D-Index: 262 scientists 34 D-Index: 244 scientists 35 D-Index: 236 scientists 36 D-Index: 211 scientists 37 D-Index: 220 scientists 38 D-Index: 214 scientists 39 D-Index: 214 scientists 40 D-Index: 205 scientists 41 D-Index: 187 scientists 42 D-Index: 194 scientists 43 D-Index: 201 scientists 44 D-Index: 155 scientists 45 D-Index: 189 scientists 46 D-Index: 148 scientists 47 D-Index: 160 scientists 48 D-Index: 134 scientists 49 D-Index: 130 scientists 50 D-Index: 141 scientists 51 D-Index: 156 scientists 52 D-Index: 108 scientists 53 D-Index: 130 scientists 54 D-Index: 112 scientists 55 D-Index: 97 scientists 56 D-Index: 111 scientists 57 D-Index: 102 scientists 58 D-Index: 108 scientists 59 D-Index: 120 scientists 60 D-Index: 103 scientists 61 D-Index: 93 scientists 62 D-Index: 92 scientists 63 D-Index: 74 scientists 64 D-Index: 77 scientists 65 D-Index: 73 scientists 66 D-Index: 64 scientists 67 D-Index: 69 scientists 68 D-Index: 60 scientists 69 D-Index: 39 scientists 70 D-Index: 57 scientists 71 D-Index: 59 scientists 72 D-Index: 46 scientists 73 D-Index: 49 scientists 74 D-Index: 38 scientists 75 D-Index: 35 scientists 76 D-Index: 32 scientists 77 D-Index: 35 scientists 78 D-Index: 31 scientists 79 D-Index: 22 scientists 80 D-Index: 34 scientists 81 D-Index: 31 scientists 82 D-Index: 34 scientists 83 D-Index: 23 scientists 84 D-Index: 18 scientists 85 D-Index: 30 scientists 86 D-Index: 19 scientists 87 D-Index: 19 scientists 88 D-Index: 20 scientists 89 D-Index: 8 scientists 90 D-Index: 17 scientists 91 D-Index: 7 scientists 92 D-Index: 14 scientists 93 D-Index: 9 scientists 94 D-Index: 15 scientists 95 D-Index: 10 scientists 96 D-Index: 12 scientists 97 D-Index: 10 scientists 98 D-Index: 10 scientists 99 D-Index: 12 scientists 100 D-Index: 16 scientists 101 D-Index: 5 scientists 102 D-Index: 7 scientists 103 D-Index: 7 scientists 104 D-Index: 8 scientists 105 D-Index: 9 scientists 106 D-Index: 13 scientists 107 D-Index: 4 scientists 108 D-Index: 5 scientists 109 D-Index: 10 scientists 110 D-Index: 8 scientists 111+ D-Index: 96 scientists
30 D-Index 111+

This scientist: 30 D-Index — 3rd percentile

3% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 111 D-Index or more.

Overview

Toru Tatsumi is affiliated with NEC (Japan) in Japan. The scientist's work is primarily situated within this institutional context.

There are no recent papers, frequent co-authors, or specific publication venues recorded for Toru Tatsumi. Likewise, there is no available data regarding book publications, main fields of study, subfields, or main topics of research.

No awards have been documented, and there is no indication that the scientist is deceased.

Best Publications

  • Ge growth on Si using atomic hydrogen as a surfactant

    Akira Sakai;Toru Tatsumi

  • Fluorinated amorphous carbon thin films grown by plasma enhanced chemical vapor deposition for low dielectric constant interlayer dielectrics

    Kazuhiko Endo;Toru Tatsumi

  • Si/Ge0.3Si0.7/Si heterojunction bipolar transistor made with Si molecular beam epitaxy

    Toru Tatsumi;Hiroyuki Hirayama;Naoaki Aizaki

  • Method for fabricating polycrystalline silicon having micro roughness on the surface

    Hirohito Watanabe;Toru Tatsumi

  • Plasma deposition of low-dielectric-constant fluorinated amorphous carbon

    Kazuhiko Endo;Keisuke Shinoda;Toru Tatsumi

  • A 0.1-/spl mu/m delta-doped MOSFET fabricated with post-low-energy implanting selective epitaxy

    K. Noda;T. Tatsumi;T. Uchida;K. Nakajima

  • Fluorinated amorphous carbon thin films grown by helicon plasma enhanced chemical vapor deposition for low dielectric constant interlayer dielectrics

    Kazuhiko Endo;Toru Tatsumi

  • Near‐band‐gap photoluminescence of Si1−xGex alloys grown on Si(100) by molecular beam epitaxy

    Koichi Terashima;Michio Tajima;Toru Tatsumi

  • Dual workfunction Ni-Silicide/HfSiON gate stacks by phase-controlled full-silicidation (PC-FUSI) technique for 45nm-node LSTP and LOP devices

    K. Takahashi;K. Manabe;T. Ikarashi;N. Ikarashi

  • Selective growth condition in disilane gas source silicon molecular beam epitaxy

    Hiroyuki Hirayama;Toru Tatsumi;Naoaki Aizaki

  • SEMICONDUCTOR DEVICE WITH CONTACT PLUG AND MANUFACTURING METHOD THEREOF

    Hada Hiromitsu;Mori Hidemitsu;Toru Tatsumi;Kasai Naoki

  • NV-SRAM: a nonvolatile SRAM with back-up ferroelectric capacitors

    T. Miwa;J. Yamada;H. Koike;H. Toyoshima

  • Semiconductor device having polycrystalline silicon layer with uneven surface defined by hemispherical or mushroom like shape silicon grain

    Hirohito Watanabe;Toru Tatsumi

  • Hemispherical Grained Silicon (HSG-Si) Formation on In-Situ Phosphorous Doped Amorphous-Si Using The Seeding Method

    H. Watanabe;T. Tatsumi;A. Sakai;S. Shishiguchi

  • Facet formation mechanism of silicon selective epitaxial layer by Si ultrahigh vacuum chemical vapor deposition

    Tohru Aoyama;Taeko Ikarashi;Keiko Miyanaga;Toru Tatsumi

  • Boron heavy doping for Si molecular beam epitaxy using a HBO2 source

    Toru Tatsumi;Hiroyuki Hirayama;Naoaki Aizaki

  • Advanced Techniques to Decrease Defect Density in Molecular Beam Epitaxial Silicon Films

    Toru Tatsumi;Naoaki Aizaki;Hideki Tsuya

  • Semiconductor device and production method therefor

    Kiyoshi Takeuchi;Koichi Terashima;Hitoshi Wakabayashi;Shigeharu Yamagami

  • Growth of strain-relaxed Ge films on Si(001) surfaces

    Akira Sakai;Toru Tatsumi;Keiko Aoyama

  • Metal Organic Atomic Layer Deposition of High-k Gate Dielectrics Using Plasma Oxidation

    Kazuhiko Endo;Toru Tatsumi

  • Reflection high energy electron diffraction and Auger electron spectroscopic study on B/Si(111) surfaces

    Hiroyuki Hirayama;Toru Tatsumi;Naoaki Aizaki

  • Selective epitaxial growth by UHV-CVD using Si2H6 and Cl2

    Toru Tatsumi;Ken-ichi Aketagawa;Masayuki Hiroi;Junro Sakai

  • Selective heteroepitaxial growth of Si1−xGex using gas source molecular beam epitaxy

    Hiroyuki Hirayama;Masayuki Hiroi;Kazuhisa Koyama;Toru Tatsumi

  • Defect-mediated island formation in Stranski-Krastanov growth of Ge on Si(001).

    Akira Sakai;Toru Tatsumi

  • Hydrogen passivation effect in Si molecular beam epitaxy

    Hiroyuki Hirayama;Toru Tatsumi

  • Crystallization of Amorphous Silicon with Clean Surfaces

    Akira Sakai;Haruhiko Ono;Koichi Ishida;Taeko Niino

  • Nitrogen doped fluorinated amorphous carbon thin films grown by plasma enhanced chemical vapor deposition for low dielectric constant interlayer dielectrics

    Kazuhiko Endo;Toru Tatsumi

  • Gas source Si-MBE

    Hiroyuki Hirayama;Masayuki Hiroi;Kazuhisa Koyama;Toru Tatsumi

Frequent Co-Authors

Kazuhiko Endo
Kazuhiko Endo National Institute of Advanced Industrial Science and Technology
Masahiro Nomura
Masahiro Nomura University of Tokyo
Chenming Hu
Chenming Hu University of California, Berkeley
Yukinori Ochiai
Yukinori Ochiai NEC (Japan)
Atsushi Oshiyama
Atsushi Oshiyama Nagoya University
Seiji Samukawa
Seiji Samukawa Tohoku University
Kenichi Nishi
Kenichi Nishi NEC (Japan)

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