Toru Tatsumi

Overview

Best Publications

• Ge growth on Si using atomic hydrogen as a surfactant

  Akira Sakai;Toru Tatsumi

  317
  Citations

• Fluorinated amorphous carbon thin films grown by plasma enhanced chemical vapor deposition for low dielectric constant interlayer dielectrics

  Kazuhiko Endo;Toru Tatsumi

  253
  Citations

• Si/Ge0.3Si0.7/Si heterojunction bipolar transistor made with Si molecular beam epitaxy

  Toru Tatsumi;Hiroyuki Hirayama;Naoaki Aizaki

  208
  Citations

• Method for fabricating polycrystalline silicon having micro roughness on the surface

  Hirohito Watanabe;Toru Tatsumi

  198
  Citations

• Plasma deposition of low-dielectric-constant fluorinated amorphous carbon

  Kazuhiko Endo;Keisuke Shinoda;Toru Tatsumi

  197
  Citations

• A 0.1-/spl mu/m delta-doped MOSFET fabricated with post-low-energy implanting selective epitaxy

  K. Noda;T. Tatsumi;T. Uchida;K. Nakajima

  194
  Citations

• Fluorinated amorphous carbon thin films grown by helicon plasma enhanced chemical vapor deposition for low dielectric constant interlayer dielectrics

  Kazuhiko Endo;Toru Tatsumi

  172
  Citations

• Near‐band‐gap photoluminescence of Si1−xGex alloys grown on Si(100) by molecular beam epitaxy

  Koichi Terashima;Michio Tajima;Toru Tatsumi

  148
  Citations

• Dual workfunction Ni-Silicide/HfSiON gate stacks by phase-controlled full-silicidation (PC-FUSI) technique for 45nm-node LSTP and LOP devices

  K. Takahashi;K. Manabe;T. Ikarashi;N. Ikarashi

  121
  Citations

• Selective growth condition in disilane gas source silicon molecular beam epitaxy

  Hiroyuki Hirayama;Toru Tatsumi;Naoaki Aizaki

  116
  Citations

• SEMICONDUCTOR DEVICE WITH CONTACT PLUG AND MANUFACTURING METHOD THEREOF

  Hada Hiromitsu;Mori Hidemitsu;Toru Tatsumi;Kasai Naoki

  103
  Citations

• NV-SRAM: a nonvolatile SRAM with back-up ferroelectric capacitors

  T. Miwa;J. Yamada;H. Koike;H. Toyoshima

  98
  Citations

• Semiconductor device having polycrystalline silicon layer with uneven surface defined by hemispherical or mushroom like shape silicon grain

  Hirohito Watanabe;Toru Tatsumi

  93
  Citations

• Hemispherical Grained Silicon (HSG-Si) Formation on In-Situ Phosphorous Doped Amorphous-Si Using The Seeding Method

  H. Watanabe;T. Tatsumi;A. Sakai;S. Shishiguchi

  86
  Citations

• Facet formation mechanism of silicon selective epitaxial layer by Si ultrahigh vacuum chemical vapor deposition

  Tohru Aoyama;Taeko Ikarashi;Keiko Miyanaga;Toru Tatsumi

  84
  Citations

• Boron heavy doping for Si molecular beam epitaxy using a HBO2 source

  Toru Tatsumi;Hiroyuki Hirayama;Naoaki Aizaki

  84
  Citations

• Advanced Techniques to Decrease Defect Density in Molecular Beam Epitaxial Silicon Films

  Toru Tatsumi;Naoaki Aizaki;Hideki Tsuya

  81
  Citations

• Semiconductor device and production method therefor

  Kiyoshi Takeuchi;Koichi Terashima;Hitoshi Wakabayashi;Shigeharu Yamagami

  80
  Citations

• Growth of strain-relaxed Ge films on Si(001) surfaces

  Akira Sakai;Toru Tatsumi;Keiko Aoyama

  79
  Citations

• Metal Organic Atomic Layer Deposition of High-k Gate Dielectrics Using Plasma Oxidation

  Kazuhiko Endo;Toru Tatsumi

  77
  Citations

• Reflection high energy electron diffraction and Auger electron spectroscopic study on B/Si(111) surfaces

  Hiroyuki Hirayama;Toru Tatsumi;Naoaki Aizaki

  77
  Citations

• Selective epitaxial growth by UHV-CVD using Si2H6 and Cl2

  Toru Tatsumi;Ken-ichi Aketagawa;Masayuki Hiroi;Junro Sakai

  70
  Citations

• Selective heteroepitaxial growth of Si1−xGex using gas source molecular beam epitaxy

  Hiroyuki Hirayama;Masayuki Hiroi;Kazuhisa Koyama;Toru Tatsumi

  63
  Citations

• Defect-mediated island formation in Stranski-Krastanov growth of Ge on Si(001).

  Akira Sakai;Toru Tatsumi

  58
  Citations

• Hydrogen passivation effect in Si molecular beam epitaxy

  Hiroyuki Hirayama;Toru Tatsumi

  56
  Citations

• Crystallization of Amorphous Silicon with Clean Surfaces

  Akira Sakai;Haruhiko Ono;Koichi Ishida;Taeko Niino

  54
  Citations

• Nitrogen doped fluorinated amorphous carbon thin films grown by plasma enhanced chemical vapor deposition for low dielectric constant interlayer dielectrics

  Kazuhiko Endo;Toru Tatsumi

  53
  Citations

• Gas source Si-MBE

  Hiroyuki Hirayama;Masayuki Hiroi;Kazuhisa Koyama;Toru Tatsumi

  50
  Citations