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Kenichi Nishi

Kenichi Nishi

D-Index & Metrics

Engineering and Technology

D-Index
38
Citations
5763
World Ranking
8060
National Ranking
164

Overview

Kenichi Nishi is a researcher affiliated with NEC in Japan, specializing in the fields of Engineering and Physics and Astronomy. Their work primarily focuses on Electrical and Electronic Engineering and Atomic and Molecular Physics, and Optics, with additional contributions related to Surfaces, Coatings and Films, Materials Chemistry, and Spectroscopy.

Their scientific output includes research on Semiconductor Lasers and Optical Devices, Photonic and Optical Devices, Semiconductor Quantum Structures and Devices, Photonic Crystals and Applications, Advanced Semiconductor Detectors and Materials, Advanced Fiber Laser Technologies, and Optical Coatings and Gratings.

Frequent coauthors of Kenichi Nishi include:

  • Mitsuru Sugawara
  • Keizo Takemasa
  • David Childs
  • R. A. Hogg
  • Adam F. McKenzie

Kenichi Nishi has published multiple papers in well-known venues with recurring contributions to Applied Physics Letters, Photonics Research, and the Japanese Journal of Applied Physics. They have also published in conference proceedings such as the Extended Abstracts of the 2020 International Conference on Solid State Devices and Materials and the 2022 28th International Semiconductor Laser Conference (ISLC).

Representative recent publications include:

  • Quantum dot mode-locked frequency comb with ultra-stable 25.5 GHz spacing between 20°C and 120°C, 2020, Photonics Research
  • Dynamic performance and reflection sensitivity of quantum dot distributed feedback lasers with large optical mismatch, 2021, Photonics Research
  • Void engineering in epitaxially regrown GaAs-based photonic crystal surface emitting lasers by grating profile design, 2021, Applied Physics Letters
  • Impact of low-temperature cover layer growth of InAs/GaAs quantum dots on their optical properties, 2022, Japanese Journal of Applied Physics
  • Extreme temperature operation for broad bandwidth quantum-dot based superluminescent diodes, 2023, Applied Physics Letters

Best Publications

  • A narrow photoluminescence linewidth of 21 meV at 1.35 μm from strain-reduced InAs quantum dots covered by In0.2Ga0.8As grown on GaAs substrates

    Kenichi Nishi;Hideaki Saito;Shigeo Sugou;Jeong-Sik Lee

  • 1.3 μm photoluminescence from InGaAs quantum dots on GaAs

    R. P. Mirin;J. P. Ibbetson;K. Nishi;A. C. Gossard

  • Enhanced spontaneous emission from GaAs quantum wells in monolithic microcavities

    H. Yokoyama;K. Nishi;T. Anan;H. Yamada

  • Room‐temperature lasing operation of a quantum‐dot vertical‐cavity surface‐emitting laser

    Hideaki Saito;Kenichi Nishi;Ichiro Ogura;Shigeo Sugou

  • Low chirp observed in directly modulated quantum dot lasers

    H. Saito;K. Nishi;A. Kamei;S. Sugou

  • Shape transition of InAs quantum dots by growth at high temperature

    Hideaki Saito;Kenichi Nishi;Shigeo Sugou

  • On-Chip Optical Interconnect

    K. Ohashi;K. Nishi;T. Shimizu;M. Nakada

  • Ground-state lasing at room temperature in long-wavelength InAs quantum-dot lasers on InP(311)B substrates

    Hideaki Saito;Kenichi Nishi;Sigeo Sugou

  • Influence of GaAs capping on the optical properties of InGaAs/GaAs surface quantum dots with 1.5 μm emission

    Hideaki Saito;Kenichi Nishi;Shigeo Sugou

  • Nanoscale InP Islands for Quantum Box Structures by Hydride Vapor Phase Epitaxy

    Jouni Ahopelto;A. Atsushi Yamaguchi;Kenichi Nishi;Akira Usui

  • Controlling polarization of quantum-dot surface-emitting lasers by using structurally anisotropic self-assembled quantum dots

    Hideaki Saito;Kenichi Nishi;Shigeo Sugou;Yoshimasa Sugimoto

  • Controlling spontaneous emission and threshold-less laser oscillation with optical microcavities

    H. Yokoyama;K. Nishi;T. Anan;Y. Nambu

  • Critical layer thickness on (111)B‐oriented InGaAs/GaAs heteroepitaxy

    Takayoshi Anan;Kenichi Nishi;Sigeo Sugou

  • GaAsSb: A novel material for 1.3 [micro sign]m VCSELs

    T. Anan;K. Nishi;S. Sugou;M. Yamada

  • Room temperature low-threshold CW operation of 1.23 [micro sign]m GaAsSb VCSELs on GaAs substrates

    M. Yamada;T. Anan;K. Kurihara;K. Nishi

  • Structural and optical characterization of InAs/InGaAs self‐assembled quantum dots grown on (311)B GaAs

    Kenichi Nishi;Richard Mirin;Devin Leonard;Gilberto Medeiros‐Ribeiro

  • Development of Quantum Dot Lasers for Data-Com and Silicon Photonics Applications

    Kenichi Nishi;Keizo Takemasa;Mitsuru Sugawara;Yasuhiko Arakawa

  • Continuous-wave operation of 1.30 [micro sign]m GaAsSb/GaAs VCSELs

    T. Anan;M. Yamada;K. Nishi;K. Kurihara

  • Homogeneous linewidth broadening in a In 0.5 Ga 0.5 A s / G a A s single quantum dot at room temperature investigated using a highly sensitive near-field scanning optical microscope

    K. Matsuda;K. Ikeda;T. Saiki;H. Tsuchiya

  • Fluorescence Intermittency in Self-Assembled InP Quantum Dots

    Mitsuru Sugisaki;Hong-Wen Ren;Kenichi Nishi;Yasuaki Masumoto

  • Low Temperature Near-Field Photoluminescence Spectroscopy of InGaAs Single Quantum Dots.

    Toshiharu Saiki;Kenichi Nishi;Motoichi Ohtsu

  • Improvement of InP/InGaAs heterointerfaces grown by gas source molecular beam epitaxy

    Takayoshi Anan;Shigeo Sugou;Kenichi Nishi;Toshinari Ichihashi

  • Room-temperature photoluminescence spectroscopy of self-assembled In0.5Ga0.5As single quantum dots by using highly sensitive near-field scanning optical microscope

    K. Matsuda;T. Saiki;H. Saito;K. Nishi

Frequent Co-Authors

Yasuaki Masumoto
Yasuaki Masumoto University of Tsukuba
Yasuhiko Arakawa
Yasuhiko Arakawa University of Tokyo
Yoshiaki Nakata
Yoshiaki Nakata University of Tokyo
Koji Yamada
Koji Yamada National Institute of Advanced Industrial Science and Technology
Akihisa Tomita
Akihisa Tomita Hokkaido University
Kazunari Matsuda
Kazunari Matsuda Kyoto University
Motoichi Ohtsu
Motoichi Ohtsu University of Tokyo
Richard P. Mirin
Richard P. Mirin National Institute of Standards and Technology
Arthur C. Gossard
Arthur C. Gossard University of California, Santa Barbara

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