World's Best Scientists 2026 revealed!
Kenichi Nishi

Kenichi Nishi

D-Index & Metrics

Engineering and Technology

D-Index
38
Citations
5763
World Ranking
8062
National Ranking
164

Kenichi Nishi publication distribution in Engineering and Technology in 2026

The chart shows the distribution of publications by all Research.com ranked scientists in the field of Engineering and Technology in 2026. The highlighted bar marks where Kenichi Nishi sits on this spectrum.

38–47 publications: 20 scientists 48–57 publications: 35 scientists 58–67 publications: 96 scientists 68–77 publications: 135 scientists 78–87 publications: 190 scientists 88–97 publications: 259 scientists 98–107 publications: 283 scientists 108–117 publications: 369 scientists 118–127 publications: 341 scientists 128–137 publications: 386 scientists 138–147 publications: 372 scientists 148–157 publications: 457 scientists 158–167 publications: 415 scientists 168–177 publications: 407 scientists 178–187 publications: 421 scientists 188–197 publications: 378 scientists 198–207 publications: 403 scientists 208–217 publications: 317 scientists 218–227 publications: 346 scientists 228–237 publications: 321 scientists 238–247 publications: 260 scientists 248–257 publications: 280 scientists 258–267 publications: 240 scientists 268–277 publications: 214 scientists 278–287 publications: 242 scientists 288–297 publications: 203 scientists 298–307 publications: 166 scientists 308–317 publications: 154 scientists 318–327 publications: 175 scientists 328–337 publications: 159 scientists 338–347 publications: 99 scientists 348–357 publications: 131 scientists 358–367 publications: 106 scientists 368–377 publications: 118 scientists 378–387 publications: 97 scientists 388–397 publications: 108 scientists 398–407 publications: 82 scientists 408–417 publications: 71 scientists 418–427 publications: 64 scientists 428–437 publications: 55 scientists 438–447 publications: 54 scientists 448–457 publications: 60 scientists 458–467 publications: 47 scientists 468–477 publications: 40 scientists 478–487 publications: 30 scientists 488–497 publications: 29 scientists 498–507 publications: 38 scientists 508–517 publications: 40 scientists 518–527 publications: 32 scientists 528–537 publications: 23 scientists 538–547 publications: 28 scientists 548–557 publications: 23 scientists 558–567 publications: 19 scientists 568–577 publications: 16 scientists 578–587 publications: 17 scientists 588–597 publications: 18 scientists 598–607 publications: 22 scientists 608–617 publications: 15 scientists 618–627 publications: 9 scientists 628–637 publications: 11 scientists 638–647 publications: 21 scientists 648–657 publications: 12 scientists 658–667 publications: 9 scientists 668–677 publications: 11 scientists 678–687 publications: 9 scientists 688–697 publications: 6 scientists 698–707 publications: 14 scientists 708–717 publications: 7 scientists 718–727 publications: 8 scientists 728–737 publications: 10 scientists 738–747 publications: 9 scientists 748–757 publications: 5 scientists 758–767 publications: 5 scientists 768–777 publications: 11 scientists 778–787 publications: 7 scientists 788–797 publications: 2 scientists 798–803 publications: 4 scientists 804+ publications: 100 scientists
38 publications 804+

This scientist: 189 publications — 43rd percentile

43% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 804 publications or more.

Kenichi Nishi D-index placement in Engineering and Technology in 2026

The chart shows the D-index (discipline H-index) distribution of Engineering and Technology scientists ranked by Research.com in 2026. The highlighted bar marks where Kenichi Nishi sits on this spectrum.

30 D-Index: 59 scientists 31 D-Index: 114 scientists 32 D-Index: 129 scientists 33 D-Index: 189 scientists 34 D-Index: 200 scientists 35 D-Index: 262 scientists 36 D-Index: 311 scientists 37 D-Index: 312 scientists 38 D-Index: 350 scientists 39 D-Index: 385 scientists 40 D-Index: 348 scientists 41 D-Index: 362 scientists 42 D-Index: 426 scientists 43 D-Index: 380 scientists 44 D-Index: 310 scientists 45 D-Index: 341 scientists 46 D-Index: 301 scientists 47 D-Index: 306 scientists 48 D-Index: 271 scientists 49 D-Index: 246 scientists 50 D-Index: 210 scientists 51 D-Index: 253 scientists 52 D-Index: 213 scientists 53 D-Index: 221 scientists 54 D-Index: 195 scientists 55 D-Index: 186 scientists 56 D-Index: 170 scientists 57 D-Index: 167 scientists 58 D-Index: 166 scientists 59 D-Index: 144 scientists 60 D-Index: 152 scientists 61 D-Index: 141 scientists 62 D-Index: 138 scientists 63 D-Index: 131 scientists 64 D-Index: 118 scientists 65 D-Index: 114 scientists 66 D-Index: 119 scientists 67 D-Index: 95 scientists 68 D-Index: 87 scientists 69 D-Index: 77 scientists 70 D-Index: 89 scientists 71 D-Index: 69 scientists 72 D-Index: 54 scientists 73 D-Index: 46 scientists 74 D-Index: 55 scientists 75 D-Index: 54 scientists 76 D-Index: 49 scientists 77 D-Index: 53 scientists 78 D-Index: 46 scientists 79 D-Index: 28 scientists 80 D-Index: 39 scientists 81 D-Index: 36 scientists 82 D-Index: 24 scientists 83 D-Index: 26 scientists 84 D-Index: 36 scientists 85 D-Index: 18 scientists 86 D-Index: 25 scientists 87 D-Index: 19 scientists 88 D-Index: 26 scientists 89 D-Index: 27 scientists 90 D-Index: 23 scientists 91 D-Index: 15 scientists 92 D-Index: 12 scientists 93 D-Index: 9 scientists 94 D-Index: 15 scientists 95 D-Index: 10 scientists 96 D-Index: 13 scientists 97 D-Index: 13 scientists 98 D-Index: 9 scientists 99 D-Index: 7 scientists 100 D-Index: 7 scientists 101 D-Index: 8 scientists 102 D-Index: 7 scientists 103 D-Index: 7 scientists 104 D-Index: 9 scientists 105 D-Index: 6 scientists 106 D-Index: 9 scientists 107+ D-Index: 99 scientists
30 D-Index 107+

This scientist: 38 D-Index — 20th percentile

20% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 107 D-Index or more.

Overview

Kenichi Nishi is a researcher affiliated with NEC in Japan, specializing in the fields of Engineering and Physics and Astronomy. Their work primarily focuses on Electrical and Electronic Engineering and Atomic and Molecular Physics, and Optics, with additional contributions related to Surfaces, Coatings and Films, Materials Chemistry, and Spectroscopy.

Their scientific output includes research on Semiconductor Lasers and Optical Devices, Photonic and Optical Devices, Semiconductor Quantum Structures and Devices, Photonic Crystals and Applications, Advanced Semiconductor Detectors and Materials, Advanced Fiber Laser Technologies, and Optical Coatings and Gratings.

Frequent coauthors of Kenichi Nishi include:

  • Mitsuru Sugawara
  • Keizo Takemasa
  • David Childs
  • R. A. Hogg
  • Adam F. McKenzie

Kenichi Nishi has published multiple papers in well-known venues with recurring contributions to Applied Physics Letters, Photonics Research, and the Japanese Journal of Applied Physics. They have also published in conference proceedings such as the Extended Abstracts of the 2020 International Conference on Solid State Devices and Materials and the 2022 28th International Semiconductor Laser Conference (ISLC).

Representative recent publications include:

  • Quantum dot mode-locked frequency comb with ultra-stable 25.5 GHz spacing between 20°C and 120°C, 2020, Photonics Research
  • Dynamic performance and reflection sensitivity of quantum dot distributed feedback lasers with large optical mismatch, 2021, Photonics Research
  • Void engineering in epitaxially regrown GaAs-based photonic crystal surface emitting lasers by grating profile design, 2021, Applied Physics Letters
  • Impact of low-temperature cover layer growth of InAs/GaAs quantum dots on their optical properties, 2022, Japanese Journal of Applied Physics
  • Extreme temperature operation for broad bandwidth quantum-dot based superluminescent diodes, 2023, Applied Physics Letters

Best Publications

  • A narrow photoluminescence linewidth of 21 meV at 1.35 μm from strain-reduced InAs quantum dots covered by In0.2Ga0.8As grown on GaAs substrates

    Kenichi Nishi;Hideaki Saito;Shigeo Sugou;Jeong-Sik Lee

  • 1.3 μm photoluminescence from InGaAs quantum dots on GaAs

    R. P. Mirin;J. P. Ibbetson;K. Nishi;A. C. Gossard

  • Enhanced spontaneous emission from GaAs quantum wells in monolithic microcavities

    H. Yokoyama;K. Nishi;T. Anan;H. Yamada

  • Room‐temperature lasing operation of a quantum‐dot vertical‐cavity surface‐emitting laser

    Hideaki Saito;Kenichi Nishi;Ichiro Ogura;Shigeo Sugou

  • Low chirp observed in directly modulated quantum dot lasers

    H. Saito;K. Nishi;A. Kamei;S. Sugou

  • Shape transition of InAs quantum dots by growth at high temperature

    Hideaki Saito;Kenichi Nishi;Shigeo Sugou

  • On-Chip Optical Interconnect

    K. Ohashi;K. Nishi;T. Shimizu;M. Nakada

  • Ground-state lasing at room temperature in long-wavelength InAs quantum-dot lasers on InP(311)B substrates

    Hideaki Saito;Kenichi Nishi;Sigeo Sugou

  • Influence of GaAs capping on the optical properties of InGaAs/GaAs surface quantum dots with 1.5 μm emission

    Hideaki Saito;Kenichi Nishi;Shigeo Sugou

  • Nanoscale InP Islands for Quantum Box Structures by Hydride Vapor Phase Epitaxy

    Jouni Ahopelto;A. Atsushi Yamaguchi;Kenichi Nishi;Akira Usui

  • Controlling polarization of quantum-dot surface-emitting lasers by using structurally anisotropic self-assembled quantum dots

    Hideaki Saito;Kenichi Nishi;Shigeo Sugou;Yoshimasa Sugimoto

  • Controlling spontaneous emission and threshold-less laser oscillation with optical microcavities

    H. Yokoyama;K. Nishi;T. Anan;Y. Nambu

  • Critical layer thickness on (111)B‐oriented InGaAs/GaAs heteroepitaxy

    Takayoshi Anan;Kenichi Nishi;Sigeo Sugou

  • GaAsSb: A novel material for 1.3 [micro sign]m VCSELs

    T. Anan;K. Nishi;S. Sugou;M. Yamada

  • Room temperature low-threshold CW operation of 1.23 [micro sign]m GaAsSb VCSELs on GaAs substrates

    M. Yamada;T. Anan;K. Kurihara;K. Nishi

  • Structural and optical characterization of InAs/InGaAs self‐assembled quantum dots grown on (311)B GaAs

    Kenichi Nishi;Richard Mirin;Devin Leonard;Gilberto Medeiros‐Ribeiro

  • Development of Quantum Dot Lasers for Data-Com and Silicon Photonics Applications

    Kenichi Nishi;Keizo Takemasa;Mitsuru Sugawara;Yasuhiko Arakawa

  • Continuous-wave operation of 1.30 [micro sign]m GaAsSb/GaAs VCSELs

    T. Anan;M. Yamada;K. Nishi;K. Kurihara

  • Homogeneous linewidth broadening in a In 0.5 Ga 0.5 A s / G a A s single quantum dot at room temperature investigated using a highly sensitive near-field scanning optical microscope

    K. Matsuda;K. Ikeda;T. Saiki;H. Tsuchiya

  • Fluorescence Intermittency in Self-Assembled InP Quantum Dots

    Mitsuru Sugisaki;Hong-Wen Ren;Kenichi Nishi;Yasuaki Masumoto

  • Low Temperature Near-Field Photoluminescence Spectroscopy of InGaAs Single Quantum Dots.

    Toshiharu Saiki;Kenichi Nishi;Motoichi Ohtsu

  • Improvement of InP/InGaAs heterointerfaces grown by gas source molecular beam epitaxy

    Takayoshi Anan;Shigeo Sugou;Kenichi Nishi;Toshinari Ichihashi

  • Room-temperature photoluminescence spectroscopy of self-assembled In0.5Ga0.5As single quantum dots by using highly sensitive near-field scanning optical microscope

    K. Matsuda;T. Saiki;H. Saito;K. Nishi

Frequent Co-Authors

Yasuaki Masumoto
Yasuaki Masumoto University of Tsukuba
Yasuhiko Arakawa
Yasuhiko Arakawa University of Tokyo
Yoshiaki Nakata
Yoshiaki Nakata University of Tokyo
Koji Yamada
Koji Yamada National Institute of Advanced Industrial Science and Technology
Akira Usui
Akira Usui Kōchi University
Kazunari Matsuda
Kazunari Matsuda Kyoto University
Akihisa Tomita
Akihisa Tomita Hokkaido University
Motoichi Ohtsu
Motoichi Ohtsu University of Tokyo
Richard P. Mirin
Richard P. Mirin National Institute of Standards and Technology
Arthur C. Gossard
Arthur C. Gossard University of California, Santa Barbara

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