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Yoshiaki Nakata

Yoshiaki Nakata

D-Index & Metrics

Electronics and Electrical Engineering

D-Index
50
Citations
8208
World Ranking
2850
National Ranking
98

Overview

Yoshiaki Nakata is a researcher affiliated with Fujitsu in Japan. Their work primarily spans the field of Materials Science, with a particular focus on Materials Chemistry and Electronic, Optical and Magnetic Materials. Nakata's research contributions also touch on Renewable Energy, Sustainability and the Environment.

Their publication record includes investigations into Ga2O3 and related materials, ZnO doping and properties, as well as studies on the electronic and structural properties of oxides. Nakata has also contributed to research on advanced photocatalysis techniques.

The following recent papers demonstrate the scope of their work:

  • Delay-time analysis in radio-frequency β-Ga2O3 field effect transistors, 2020, Applied Physics Letters
  • Reduction in leakage current through interface between Ga2O3 epitaxial layer and substrate by ion implantation doping of compensating impurities, 2020, Applied Physics Letters
  • Effect of (AlGa)2O3 back barrier on device characteristics of β-Ga2O3 metal-oxide-semiconductor field-effect transistors with Si-implanted channel, 2021, Japanese Journal of Applied Physics

Nakata has published predominantly in these venues:

  • Applied Physics Letters
  • Japanese Journal of Applied Physics

Collaborations feature several frequent co-authors, including:

  • Takafumi Kamimura
  • Masataka Higashiwaki
  • Sandeep Kumar
  • Chia-Hung Lin

Best Publications

  • Effect of homogeneous broadening of optical gain on lasing spectra in self-assembled In x Ga 1 − x A s / G a A s quantum dot lasers

    Mitsuru Sugawara;Kohki Mukai;Yoshiaki Nakata;Hiroshi Ishikawa

  • Recent progress in self-assembled quantum-dot optical devices for optical telecommunication: temperature-insensitive 10 Gb s−1 directly modulated lasers and 40 Gb s−1 signal-regenerative amplifiers

    M Sugawara;N Hatori;M Ishida;H Ebe

  • Theory of optical signal amplification and processing by quantum-dot semiconductor optical amplifiers

    M. Sugawara;H. Ebe;N. Hatori;M. Ishida

  • Quantum-dot semiconductor optical amplifiers for high-bit-rate signal processing up to 160 Gb s -1 and a new scheme of 3R regenerators

    M Sugawara;T Akiyama;N Hatori;Y Nakata

  • Temperature-Insensitive Eye-Opening under 10-Gb/s Modulation of 1.3-µm P-Doped Quantum-Dot Lasers without Current Adjustments

    Koji Otsubo;Nobuaki Hatori;Mitsuru Ishida;Shigekazu Okumura

  • Room temperature continuous-wave lasing in photonic crystal nanocavity

    Masahiro Nomura;Satoshi Iwamoto;Katsuyuki Watanabe;Naoto Kumagai

  • 1.3-μm CW lasing of InGaAs-GaAs quantum dots at room temperature with a threshold current of 8 mA

    K. Mukai;Y. Nakata;K. Otsubo;M. Sugawara

  • Modeling room-temperature lasing spectra of 1.3-μm self-assembled InAs∕GaAs quantum-dot lasers: Homogeneous broadening of optical gain under current injection

    M. Sugawara;N. Hatori;H. Ebe;M. Ishida

  • Molecular beam epitaxial growth of InAs self-assembled quantum dots with light-emission at 1.3 μm

    Y Nakata;K Mukai;M Sugawara;K Ohtsubo

  • Enhancement-mode Ga2O3 MOSFETs with Si-ion-implanted source and drain

    Man Hoi Wong;Yoshiaki Nakata;Akito Kuramata;Shigenobu Yamakoshi

  • Quantum-Dot Semiconductor Optical Amplifiers for High Bit-Rate Signal Processing over 40 Gbit/s

    Mitsuru Sugawara;Nobuyuki Hatori;Tomoyuki Akiyama;Yoshiaki Nakata

  • Symmetric highly efficient (/spl sim/0 dB) wavelength conversion based on four-wave mixing in quantum dot optical amplifiers

    T. Akiyama;H. Kuwatsuka;N. Hatori;Y. Nakata

  • Nonlinear gain dynamics in quantum-dot optical amplifiers and its application to optical communication devices

    T. Akiyama;H. Kuwatsuka;T. Simoyama;Y. Nakata

  • New Optical Memory Structure Using Self-Assembled InAs Quantum Dots

    Kenichi Imamura;Yoshihiro Sugiyama;Yoshiaki Nakata;Shunichi Muto

  • 1.3-/spl mu/m CW lasing characteristics of self-assembled InGaAs-GaAs quantum dots

    K. Mukai;Y. Nakata;K. Otsubo;M. Sugawara

  • Room temperature CW operation at the ground state of self-formed quantum dot lasers with multi-stacked dot layer

    H. Shoji;Y. Nakata;K. Mukai;Y. Sugiyama

  • A Pseudomorphic In0.53Ga0.47As/AlAs Resonant Tunneling Barrier with a Peak-to-Valley Current Ratio of 14 at Room Temperature

    Tsuguo Inata;Shunichi Muto;Yoshiaki Nakata;Shigehiko Sasa

  • Light emission spectra of columnar-shaped self-assembled InGaAs/GaAs quantum-dot lasers: Effect of homogeneous broadening of the optical gain on lasing characteristics

    Mitsuru Sugawara;Kohki Mukai;Yoshiaki Nakata

  • Temperature dependent lasing characteristics of multi-stacked quantum dot lasers

    Hajime Shoji;Yoshiaki Nakata;Kohki Mukai;Yoshihiro Sugiyama

  • Dynamics of carrier tunneling between vertically aligned double quantum dots

    Atsushi Tackeuchi;Takamasa Kuroda;Kazuo Mase;Yoshiaki Nakata

  • Lasing with low threshold current and high output power from columnar-shaped InAs/GaAs quantum dots

    K. Mukai;Y. Nakata;H. Shoji;M. Sugawara

  • Photon lifetime dependence of modulation efficiency and K factor in 1.3μm self-assembled InAs∕GaAs quantum-dot lasers: Impact of capture time and maximum modal gain on modulation bandwidth

    Mitsuru Ishida;Nobuaki Hatori;Tomoyuki Akiyama;Koji Otsubo

Frequent Co-Authors

Naoki Yokoyama
Naoki Yokoyama Apple (United States)
Osamu Wada
Osamu Wada Kobe University
Yasuhiko Arakawa
Yasuhiko Arakawa University of Tokyo
Masataka Higashiwaki
Masataka Higashiwaki Osaka Metropolitan University
Akito Kuramata
Akito Kuramata Novel Crystal Technology, Inc
Shigenobu Yamakoshi
Shigenobu Yamakoshi Fujitsu (Japan)
Yuji Awano
Yuji Awano Keio University
Kohei Sasaki
Kohei Sasaki Novel Crystal Technology, Inc
Takeshi Ohshima
Takeshi Ohshima Japan Atomic Energy Agency

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