World's Best Scientists 2026 revealed!
Yoshiaki Nakata

Yoshiaki Nakata

D-Index & Metrics

Electronics and Electrical Engineering

D-Index
50
Citations
8208
World Ranking
2850
National Ranking
98

Yoshiaki Nakata publication distribution in Electronics and Electrical Engineering in 2026

The chart shows the distribution of publications by all Research.com ranked scientists in the field of Electronics and Electrical Engineering in 2026. The highlighted bar marks where Yoshiaki Nakata sits on this spectrum.

34–53 publications: 24 scientists 54–73 publications: 52 scientists 74–93 publications: 114 scientists 94–113 publications: 203 scientists 114–133 publications: 269 scientists 134–153 publications: 355 scientists 154–173 publications: 403 scientists 174–193 publications: 445 scientists 194–213 publications: 430 scientists 214–233 publications: 431 scientists 234–253 publications: 399 scientists 254–273 publications: 366 scientists 274–293 publications: 335 scientists 294–313 publications: 300 scientists 314–333 publications: 276 scientists 334–353 publications: 250 scientists 354–373 publications: 214 scientists 374–393 publications: 187 scientists 394–413 publications: 152 scientists 414–433 publications: 169 scientists 434–453 publications: 147 scientists 454–473 publications: 111 scientists 474–493 publications: 117 scientists 494–513 publications: 103 scientists 514–533 publications: 99 scientists 534–553 publications: 92 scientists 554–573 publications: 75 scientists 574–593 publications: 58 scientists 594–613 publications: 69 scientists 614–633 publications: 50 scientists 634–653 publications: 62 scientists 654–673 publications: 54 scientists 674–693 publications: 44 scientists 694–713 publications: 37 scientists 714–733 publications: 28 scientists 734–753 publications: 26 scientists 754–773 publications: 26 scientists 774–793 publications: 19 scientists 794–813 publications: 23 scientists 814–833 publications: 20 scientists 834–853 publications: 16 scientists 854–873 publications: 20 scientists 874–893 publications: 11 scientists 894–913 publications: 11 scientists 914–933 publications: 16 scientists 934–953 publications: 13 scientists 954–973 publications: 10 scientists 974–993 publications: 11 scientists 994–1,013 publications: 9 scientists 1,014–1,033 publications: 9 scientists 1,034–1,053 publications: 10 scientists 1,054–1,064 publications: 6 scientists 1,065+ publications: 99 scientists
34 publications 1,065+

This scientist: 243 publications — 43rd percentile

43% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 1,065 publications or more.

Yoshiaki Nakata D-index placement in Electronics and Electrical Engineering in 2026

The chart shows the D-index (discipline H-index) distribution of Electronics and Electrical Engineering scientists ranked by Research.com in 2026. The highlighted bar marks where Yoshiaki Nakata sits on this spectrum.

30 D-Index: 178 scientists 31 D-Index: 257 scientists 32 D-Index: 263 scientists 33 D-Index: 262 scientists 34 D-Index: 244 scientists 35 D-Index: 236 scientists 36 D-Index: 211 scientists 37 D-Index: 220 scientists 38 D-Index: 214 scientists 39 D-Index: 214 scientists 40 D-Index: 205 scientists 41 D-Index: 187 scientists 42 D-Index: 194 scientists 43 D-Index: 201 scientists 44 D-Index: 155 scientists 45 D-Index: 189 scientists 46 D-Index: 148 scientists 47 D-Index: 160 scientists 48 D-Index: 134 scientists 49 D-Index: 130 scientists 50 D-Index: 141 scientists 51 D-Index: 156 scientists 52 D-Index: 108 scientists 53 D-Index: 130 scientists 54 D-Index: 112 scientists 55 D-Index: 97 scientists 56 D-Index: 111 scientists 57 D-Index: 102 scientists 58 D-Index: 108 scientists 59 D-Index: 120 scientists 60 D-Index: 103 scientists 61 D-Index: 93 scientists 62 D-Index: 92 scientists 63 D-Index: 74 scientists 64 D-Index: 77 scientists 65 D-Index: 73 scientists 66 D-Index: 64 scientists 67 D-Index: 69 scientists 68 D-Index: 60 scientists 69 D-Index: 39 scientists 70 D-Index: 57 scientists 71 D-Index: 59 scientists 72 D-Index: 46 scientists 73 D-Index: 49 scientists 74 D-Index: 38 scientists 75 D-Index: 35 scientists 76 D-Index: 32 scientists 77 D-Index: 35 scientists 78 D-Index: 31 scientists 79 D-Index: 22 scientists 80 D-Index: 34 scientists 81 D-Index: 31 scientists 82 D-Index: 34 scientists 83 D-Index: 23 scientists 84 D-Index: 18 scientists 85 D-Index: 30 scientists 86 D-Index: 19 scientists 87 D-Index: 19 scientists 88 D-Index: 20 scientists 89 D-Index: 8 scientists 90 D-Index: 17 scientists 91 D-Index: 7 scientists 92 D-Index: 14 scientists 93 D-Index: 9 scientists 94 D-Index: 15 scientists 95 D-Index: 10 scientists 96 D-Index: 12 scientists 97 D-Index: 10 scientists 98 D-Index: 10 scientists 99 D-Index: 12 scientists 100 D-Index: 16 scientists 101 D-Index: 5 scientists 102 D-Index: 7 scientists 103 D-Index: 7 scientists 104 D-Index: 8 scientists 105 D-Index: 9 scientists 106 D-Index: 13 scientists 107 D-Index: 4 scientists 108 D-Index: 5 scientists 109 D-Index: 10 scientists 110 D-Index: 8 scientists 111+ D-Index: 96 scientists
30 D-Index 111+

This scientist: 50 D-Index — 60th percentile

60% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 111 D-Index or more.

Overview

Yoshiaki Nakata is a researcher affiliated with Fujitsu in Japan. Their work primarily spans the field of Materials Science, with a particular focus on Materials Chemistry and Electronic, Optical and Magnetic Materials. Nakata's research contributions also touch on Renewable Energy, Sustainability and the Environment.

Their publication record includes investigations into Ga2O3 and related materials, ZnO doping and properties, as well as studies on the electronic and structural properties of oxides. Nakata has also contributed to research on advanced photocatalysis techniques.

The following recent papers demonstrate the scope of their work:

  • Delay-time analysis in radio-frequency β-Ga2O3 field effect transistors, 2020, Applied Physics Letters
  • Reduction in leakage current through interface between Ga2O3 epitaxial layer and substrate by ion implantation doping of compensating impurities, 2020, Applied Physics Letters
  • Effect of (AlGa)2O3 back barrier on device characteristics of β-Ga2O3 metal-oxide-semiconductor field-effect transistors with Si-implanted channel, 2021, Japanese Journal of Applied Physics

Nakata has published predominantly in these venues:

  • Applied Physics Letters
  • Japanese Journal of Applied Physics

Collaborations feature several frequent co-authors, including:

  • Takafumi Kamimura
  • Masataka Higashiwaki
  • Sandeep Kumar
  • Chia-Hung Lin

Best Publications

  • Effect of homogeneous broadening of optical gain on lasing spectra in self-assembled In x Ga 1 − x A s / G a A s quantum dot lasers

    Mitsuru Sugawara;Kohki Mukai;Yoshiaki Nakata;Hiroshi Ishikawa

  • Recent progress in self-assembled quantum-dot optical devices for optical telecommunication: temperature-insensitive 10 Gb s−1 directly modulated lasers and 40 Gb s−1 signal-regenerative amplifiers

    M Sugawara;N Hatori;M Ishida;H Ebe

  • Theory of optical signal amplification and processing by quantum-dot semiconductor optical amplifiers

    M. Sugawara;H. Ebe;N. Hatori;M. Ishida

  • Quantum-dot semiconductor optical amplifiers for high-bit-rate signal processing up to 160 Gb s -1 and a new scheme of 3R regenerators

    M Sugawara;T Akiyama;N Hatori;Y Nakata

  • Temperature-Insensitive Eye-Opening under 10-Gb/s Modulation of 1.3-µm P-Doped Quantum-Dot Lasers without Current Adjustments

    Koji Otsubo;Nobuaki Hatori;Mitsuru Ishida;Shigekazu Okumura

  • Room temperature continuous-wave lasing in photonic crystal nanocavity

    Masahiro Nomura;Satoshi Iwamoto;Katsuyuki Watanabe;Naoto Kumagai

  • 1.3-μm CW lasing of InGaAs-GaAs quantum dots at room temperature with a threshold current of 8 mA

    K. Mukai;Y. Nakata;K. Otsubo;M. Sugawara

  • Modeling room-temperature lasing spectra of 1.3-μm self-assembled InAs∕GaAs quantum-dot lasers: Homogeneous broadening of optical gain under current injection

    M. Sugawara;N. Hatori;H. Ebe;M. Ishida

  • Molecular beam epitaxial growth of InAs self-assembled quantum dots with light-emission at 1.3 μm

    Y Nakata;K Mukai;M Sugawara;K Ohtsubo

  • Enhancement-mode Ga2O3 MOSFETs with Si-ion-implanted source and drain

    Man Hoi Wong;Yoshiaki Nakata;Akito Kuramata;Shigenobu Yamakoshi

  • Quantum-Dot Semiconductor Optical Amplifiers for High Bit-Rate Signal Processing over 40 Gbit/s

    Mitsuru Sugawara;Nobuyuki Hatori;Tomoyuki Akiyama;Yoshiaki Nakata

  • Symmetric highly efficient (/spl sim/0 dB) wavelength conversion based on four-wave mixing in quantum dot optical amplifiers

    T. Akiyama;H. Kuwatsuka;N. Hatori;Y. Nakata

  • Nonlinear gain dynamics in quantum-dot optical amplifiers and its application to optical communication devices

    T. Akiyama;H. Kuwatsuka;T. Simoyama;Y. Nakata

  • New Optical Memory Structure Using Self-Assembled InAs Quantum Dots

    Kenichi Imamura;Yoshihiro Sugiyama;Yoshiaki Nakata;Shunichi Muto

  • 1.3-/spl mu/m CW lasing characteristics of self-assembled InGaAs-GaAs quantum dots

    K. Mukai;Y. Nakata;K. Otsubo;M. Sugawara

  • Room temperature CW operation at the ground state of self-formed quantum dot lasers with multi-stacked dot layer

    H. Shoji;Y. Nakata;K. Mukai;Y. Sugiyama

  • A Pseudomorphic In0.53Ga0.47As/AlAs Resonant Tunneling Barrier with a Peak-to-Valley Current Ratio of 14 at Room Temperature

    Tsuguo Inata;Shunichi Muto;Yoshiaki Nakata;Shigehiko Sasa

  • Light emission spectra of columnar-shaped self-assembled InGaAs/GaAs quantum-dot lasers: Effect of homogeneous broadening of the optical gain on lasing characteristics

    Mitsuru Sugawara;Kohki Mukai;Yoshiaki Nakata

  • Temperature dependent lasing characteristics of multi-stacked quantum dot lasers

    Hajime Shoji;Yoshiaki Nakata;Kohki Mukai;Yoshihiro Sugiyama

  • Dynamics of carrier tunneling between vertically aligned double quantum dots

    Atsushi Tackeuchi;Takamasa Kuroda;Kazuo Mase;Yoshiaki Nakata

  • Lasing with low threshold current and high output power from columnar-shaped InAs/GaAs quantum dots

    K. Mukai;Y. Nakata;H. Shoji;M. Sugawara

  • Photon lifetime dependence of modulation efficiency and K factor in 1.3μm self-assembled InAs∕GaAs quantum-dot lasers: Impact of capture time and maximum modal gain on modulation bandwidth

    Mitsuru Ishida;Nobuaki Hatori;Tomoyuki Akiyama;Koji Otsubo

Frequent Co-Authors

Naoki Yokoyama
Naoki Yokoyama Apple (United States)
Hiroshi Ishikawa
Hiroshi Ishikawa National Institute of Advanced Industrial Science and Technology
Osamu Wada
Osamu Wada Kobe University
Yasuhiko Arakawa
Yasuhiko Arakawa University of Tokyo
Masataka Higashiwaki
Masataka Higashiwaki Osaka Metropolitan University
Akito Kuramata
Akito Kuramata Novel Crystal Technology, Inc
Shigenobu Yamakoshi
Shigenobu Yamakoshi Fujitsu (Japan)
Seigo Tarucha
Seigo Tarucha University of Tokyo
Yuji Awano
Yuji Awano Keio University

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