World's Best Scientists 2026 revealed!
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Electronics and Electrical Engineering
Israel
2026

D-Index & Metrics

Electronics and Electrical Engineering

D-Index
60
Citations
11485
World Ranking
1672
National Ranking
6

Gadi Eisenstein publication distribution in Electronics and Electrical Engineering in 2026

The chart shows the distribution of publications by all Research.com ranked scientists in the field of Electronics and Electrical Engineering in 2026. The highlighted bar marks where Gadi Eisenstein sits on this spectrum.

34–53 publications: 24 scientists 54–73 publications: 52 scientists 74–93 publications: 114 scientists 94–113 publications: 203 scientists 114–133 publications: 269 scientists 134–153 publications: 355 scientists 154–173 publications: 403 scientists 174–193 publications: 445 scientists 194–213 publications: 430 scientists 214–233 publications: 431 scientists 234–253 publications: 399 scientists 254–273 publications: 366 scientists 274–293 publications: 335 scientists 294–313 publications: 300 scientists 314–333 publications: 276 scientists 334–353 publications: 250 scientists 354–373 publications: 214 scientists 374–393 publications: 187 scientists 394–413 publications: 152 scientists 414–433 publications: 169 scientists 434–453 publications: 147 scientists 454–473 publications: 111 scientists 474–493 publications: 117 scientists 494–513 publications: 103 scientists 514–533 publications: 99 scientists 534–553 publications: 92 scientists 554–573 publications: 75 scientists 574–593 publications: 58 scientists 594–613 publications: 69 scientists 614–633 publications: 50 scientists 634–653 publications: 62 scientists 654–673 publications: 54 scientists 674–693 publications: 44 scientists 694–713 publications: 37 scientists 714–733 publications: 28 scientists 734–753 publications: 26 scientists 754–773 publications: 26 scientists 774–793 publications: 19 scientists 794–813 publications: 23 scientists 814–833 publications: 20 scientists 834–853 publications: 16 scientists 854–873 publications: 20 scientists 874–893 publications: 11 scientists 894–913 publications: 11 scientists 914–933 publications: 16 scientists 934–953 publications: 13 scientists 954–973 publications: 10 scientists 974–993 publications: 11 scientists 994–1,013 publications: 9 scientists 1,014–1,033 publications: 9 scientists 1,034–1,053 publications: 10 scientists 1,054–1,064 publications: 6 scientists 1,065+ publications: 99 scientists
34 publications 1,065+

This scientist: 600 publications — 90th percentile

90% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 1,065 publications or more.

Gadi Eisenstein D-index placement in Electronics and Electrical Engineering in 2026

The chart shows the D-index (discipline H-index) distribution of Electronics and Electrical Engineering scientists ranked by Research.com in 2026. The highlighted bar marks where Gadi Eisenstein sits on this spectrum.

30 D-Index: 178 scientists 31 D-Index: 257 scientists 32 D-Index: 263 scientists 33 D-Index: 262 scientists 34 D-Index: 244 scientists 35 D-Index: 236 scientists 36 D-Index: 211 scientists 37 D-Index: 220 scientists 38 D-Index: 214 scientists 39 D-Index: 214 scientists 40 D-Index: 205 scientists 41 D-Index: 187 scientists 42 D-Index: 194 scientists 43 D-Index: 201 scientists 44 D-Index: 155 scientists 45 D-Index: 189 scientists 46 D-Index: 148 scientists 47 D-Index: 160 scientists 48 D-Index: 134 scientists 49 D-Index: 130 scientists 50 D-Index: 141 scientists 51 D-Index: 156 scientists 52 D-Index: 108 scientists 53 D-Index: 130 scientists 54 D-Index: 112 scientists 55 D-Index: 97 scientists 56 D-Index: 111 scientists 57 D-Index: 102 scientists 58 D-Index: 108 scientists 59 D-Index: 120 scientists 60 D-Index: 103 scientists 61 D-Index: 93 scientists 62 D-Index: 92 scientists 63 D-Index: 74 scientists 64 D-Index: 77 scientists 65 D-Index: 73 scientists 66 D-Index: 64 scientists 67 D-Index: 69 scientists 68 D-Index: 60 scientists 69 D-Index: 39 scientists 70 D-Index: 57 scientists 71 D-Index: 59 scientists 72 D-Index: 46 scientists 73 D-Index: 49 scientists 74 D-Index: 38 scientists 75 D-Index: 35 scientists 76 D-Index: 32 scientists 77 D-Index: 35 scientists 78 D-Index: 31 scientists 79 D-Index: 22 scientists 80 D-Index: 34 scientists 81 D-Index: 31 scientists 82 D-Index: 34 scientists 83 D-Index: 23 scientists 84 D-Index: 18 scientists 85 D-Index: 30 scientists 86 D-Index: 19 scientists 87 D-Index: 19 scientists 88 D-Index: 20 scientists 89 D-Index: 8 scientists 90 D-Index: 17 scientists 91 D-Index: 7 scientists 92 D-Index: 14 scientists 93 D-Index: 9 scientists 94 D-Index: 15 scientists 95 D-Index: 10 scientists 96 D-Index: 12 scientists 97 D-Index: 10 scientists 98 D-Index: 10 scientists 99 D-Index: 12 scientists 100 D-Index: 16 scientists 101 D-Index: 5 scientists 102 D-Index: 7 scientists 103 D-Index: 7 scientists 104 D-Index: 8 scientists 105 D-Index: 9 scientists 106 D-Index: 13 scientists 107 D-Index: 4 scientists 108 D-Index: 5 scientists 109 D-Index: 10 scientists 110 D-Index: 8 scientists 111+ D-Index: 96 scientists
30 D-Index 111+

This scientist: 60 D-Index — 77th percentile

77% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 111 D-Index or more.

Research.com Recognitions

  • 2026 - Research.com Electronics and Electrical Engineering in Israel Leader Award
  • 2025 - Research.com Electronics and Electrical Engineering in Israel Leader Award

Overview

Gadi Eisenstein is affiliated with the Technion - Israel Institute of Technology in Israel. Their research spans multiple domains within physics and engineering, with a significant focus on quantum and photonic technologies.

The primary fields of study for Eisenstein include Physics and Astronomy as well as Engineering. Within these areas, their work delves into specific subfields such as Atomic and Molecular Physics, and Optics; Electrical and Electronic Engineering; Spectroscopy; Structural Biology; and Biomedical Engineering.

Eisenstein's research topics cover a broad spectrum of advanced scientific areas. These include Semiconductor Quantum Structures and Devices, Semiconductor Lasers and Optical Devices, Photonic and Optical Devices, Advanced Fiber Laser Technologies, Spectroscopy and Laser Applications, Advanced Electron Microscopy Techniques and Applications, and Quantum Information and Cryptography.

The scientist has contributed to several academic journals and conference venues. Among the most frequent are arXiv (Cornell University), Light Science & Applications, Nanophotonics, ACS Photonics, and Applied Physics Letters.

Gadi Eisenstein has worked collaboratively with a number of frequent co-authors, including Ori Eyal, Johann Peter Reithmaier, Igor Khanonkin, Ido Kaminer, and V. Mikhelashvili. These collaborative efforts have resulted in multiple research outputs in related fields.

Recent publications by Eisenstein include the following:

  • 1.5-μm Indium Phosphide-Based Quantum Dot Lasers and Optical Amplifiers: The Impact of Atom-Like Optical Gain Material for Optoelectronics Devices, 2021, IEEE Nanotechnology Magazine
  • Creating heralded hyper-entangled photons using Rydberg atoms, 2021, Light Science & Applications
  • On the principle operation of tunneling injection quantum dot lasers, 2021, Progress in Quantum Electronics
  • Imaging the field inside nanophotonic accelerators, 2023, Nature Communications
  • High optical gain in InP-based quantum-dot material monolithically grown on silicon emitting at telecom wavelengths, 2022, Semiconductor Science and Technology

Best Publications

  • Tunable all optical delay via slow and fast light propagation in a Raman assisted fiber optical parametric amplifier: a route to all optical buffering.

    David Dahan;Gadi Eisenstein

  • Optical time-division multiplexing for very high bit-rate transmission

    R.S. Tucker;G. Eisenstein;S.K. Korotky

  • Tapered waveguide InGaAs/InGaAsP multiple-quantum-well lasers

    T.L. Koch;U. Koren;G. Eisenstein;M.G. Young

  • Femtosecond gain dynamics in InGaAsP optical amplifiers

    K. L. Hall;J. Mark;E. P. Ippen;G. Eisenstein

  • Cutoff Frequency of Submillimeter Schottky-Barrier Diodes

    K.S. Champlin;G. Eisenstein

  • Measurement of the modal reflectivity of an antireflection coating on a superluminescent diode

    I. Kaminow;G. Eisenstein;L. Stulz

  • Chemically etched conical microlenses for coupling single-mode lasers into single-mode fibers

    G Eisenstein;D Vitello

  • InP based lasers and optical amplifiers with wire-/dot-like active regions

    J P Reithmaier;A Somers;S Deubert;R Schwertberger

  • 40 GHz active mode-locking in a 1.5 mu m monolithic extended-cavity laser

    R. S. Tucker;U. Koren;G. Raybon;C. A. Burrus

  • Effects of annealing conditions on optical and electrical characteristics of titanium dioxide films deposited by electron beam evaporation

    V. Mikhelashvili;G. Eisenstein

  • Wavelength division multiplexing light source with integrated quantum well tunable lasers and optical amplifiers

    U. Koren;T. L. Koch;B. I. Miller;G. Eisenstein

  • Optical intensity modulation to 40 GHz using a waveguide electro‐optic switch

    S. K. Korotky;G. Eisenstein;R. S. Tucker;J. J. Veselka

  • Low‐loss InGaAs/InP multiple quantum well optical electroabsorption waveguide modulator

    U. Koren;B. I. Miller;T. L. Koch;G. Eisenstein

  • Imprinting the quantum statistics of photons on free electrons.

    Raphael Dahan;Raphael Dahan;Alexey Gorlach;Alexey Gorlach;Urs Haeusler;Urs Haeusler;Aviv Karnieli;Aviv Karnieli

  • Theoretical and Experimental Study of High-Speed Small-Signal Cross-Gain Modulation of Quantum-Dot Semiconductor Optical Amplifiers

    Jungho Kim;M. Laemmlin;C. Meuer;D. Bimberg

  • High quality antireflection coatings on laser facets by sputtered silicon nitride

    G. Eisenstein;L. W. Stulz

  • On the nature of quantum dash structures

    H. Dery;E. Benisty;A. Epstein;R. Alizon

  • Structural and electrical properties of electron beam gun evaporated Er2O3 insulator thin films

    V. Mikhelashvili;G. Eisenstein;F. Edelman;R. Brener

  • Electrical characteristics of metal-dielectric-metal and metal-dielectric-semiconductor structures based on electron beam evaporated Y2O3, Ta2O5 and Al2O3 thin film

    V. Mikhaelashvili;Y. Betzer;I. Prudnikov;M. Orenstein

  • Control of light by curved space in nanophotonic structures

    Rivka Bekenstein;Rivka Bekenstein;Yossef Kabessa;Yonatan Sharabi;Or Tal

  • Timing jitter in mode‐locked and gain‐switched InGaAsP injection lasers

    A. J. Taylor;J. M. Wiesenfeld;G. Eisenstein;R. S. Tucker

Frequent Co-Authors

Johann Peter Reithmaier
Johann Peter Reithmaier University of Kassel
Rodney S. Tucker
Rodney S. Tucker University of Melbourne
G. Raybon
G. Raybon Nokia (United States)
Uziel Koren
Uziel Koren Nokia (United States)
Steven K. Korotky
Steven K. Korotky Nokia (United States)
Alfred Forchel
Alfred Forchel University of Würzburg
C.A. Burrus
C.A. Burrus Nokia (United States)
Barry Miller
Barry Miller Nokia (United States)
Nir Tessler
Nir Tessler Technion – Israel Institute of Technology
Katherine L. Hall
Katherine L. Hall Wellesley College

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