World's Best Scientists 2026 revealed!

D-Index & Metrics

Electronics and Electrical Engineering

D-Index
54
Citations
8451
World Ranking
2332
National Ranking
909

Materials Science

D-Index
55
Citations
9020
World Ranking
8706
National Ranking
2132

Naoki Yokoyama publication distribution in Electronics and Electrical Engineering in 2026

The chart shows the distribution of publications by all Research.com ranked scientists in the field of Electronics and Electrical Engineering in 2026. The highlighted bar marks where Naoki Yokoyama sits on this spectrum.

34–53 publications: 24 scientists 54–73 publications: 52 scientists 74–93 publications: 114 scientists 94–113 publications: 203 scientists 114–133 publications: 269 scientists 134–153 publications: 355 scientists 154–173 publications: 403 scientists 174–193 publications: 445 scientists 194–213 publications: 430 scientists 214–233 publications: 431 scientists 234–253 publications: 399 scientists 254–273 publications: 366 scientists 274–293 publications: 335 scientists 294–313 publications: 300 scientists 314–333 publications: 276 scientists 334–353 publications: 250 scientists 354–373 publications: 214 scientists 374–393 publications: 187 scientists 394–413 publications: 152 scientists 414–433 publications: 169 scientists 434–453 publications: 147 scientists 454–473 publications: 111 scientists 474–493 publications: 117 scientists 494–513 publications: 103 scientists 514–533 publications: 99 scientists 534–553 publications: 92 scientists 554–573 publications: 75 scientists 574–593 publications: 58 scientists 594–613 publications: 69 scientists 614–633 publications: 50 scientists 634–653 publications: 62 scientists 654–673 publications: 54 scientists 674–693 publications: 44 scientists 694–713 publications: 37 scientists 714–733 publications: 28 scientists 734–753 publications: 26 scientists 754–773 publications: 26 scientists 774–793 publications: 19 scientists 794–813 publications: 23 scientists 814–833 publications: 20 scientists 834–853 publications: 16 scientists 854–873 publications: 20 scientists 874–893 publications: 11 scientists 894–913 publications: 11 scientists 914–933 publications: 16 scientists 934–953 publications: 13 scientists 954–973 publications: 10 scientists 974–993 publications: 11 scientists 994–1,013 publications: 9 scientists 1,014–1,033 publications: 9 scientists 1,034–1,053 publications: 10 scientists 1,054–1,064 publications: 6 scientists 1,065+ publications: 99 scientists
34 publications 1,065+

This scientist: 369 publications — 70th percentile

70% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 1,065 publications or more.

Naoki Yokoyama D-index placement in Electronics and Electrical Engineering in 2026

The chart shows the D-index (discipline H-index) distribution of Electronics and Electrical Engineering scientists ranked by Research.com in 2026. The highlighted bar marks where Naoki Yokoyama sits on this spectrum.

30 D-Index: 178 scientists 31 D-Index: 257 scientists 32 D-Index: 263 scientists 33 D-Index: 262 scientists 34 D-Index: 244 scientists 35 D-Index: 236 scientists 36 D-Index: 211 scientists 37 D-Index: 220 scientists 38 D-Index: 214 scientists 39 D-Index: 214 scientists 40 D-Index: 205 scientists 41 D-Index: 187 scientists 42 D-Index: 194 scientists 43 D-Index: 201 scientists 44 D-Index: 155 scientists 45 D-Index: 189 scientists 46 D-Index: 148 scientists 47 D-Index: 160 scientists 48 D-Index: 134 scientists 49 D-Index: 130 scientists 50 D-Index: 141 scientists 51 D-Index: 156 scientists 52 D-Index: 108 scientists 53 D-Index: 130 scientists 54 D-Index: 112 scientists 55 D-Index: 97 scientists 56 D-Index: 111 scientists 57 D-Index: 102 scientists 58 D-Index: 108 scientists 59 D-Index: 120 scientists 60 D-Index: 103 scientists 61 D-Index: 93 scientists 62 D-Index: 92 scientists 63 D-Index: 74 scientists 64 D-Index: 77 scientists 65 D-Index: 73 scientists 66 D-Index: 64 scientists 67 D-Index: 69 scientists 68 D-Index: 60 scientists 69 D-Index: 39 scientists 70 D-Index: 57 scientists 71 D-Index: 59 scientists 72 D-Index: 46 scientists 73 D-Index: 49 scientists 74 D-Index: 38 scientists 75 D-Index: 35 scientists 76 D-Index: 32 scientists 77 D-Index: 35 scientists 78 D-Index: 31 scientists 79 D-Index: 22 scientists 80 D-Index: 34 scientists 81 D-Index: 31 scientists 82 D-Index: 34 scientists 83 D-Index: 23 scientists 84 D-Index: 18 scientists 85 D-Index: 30 scientists 86 D-Index: 19 scientists 87 D-Index: 19 scientists 88 D-Index: 20 scientists 89 D-Index: 8 scientists 90 D-Index: 17 scientists 91 D-Index: 7 scientists 92 D-Index: 14 scientists 93 D-Index: 9 scientists 94 D-Index: 15 scientists 95 D-Index: 10 scientists 96 D-Index: 12 scientists 97 D-Index: 10 scientists 98 D-Index: 10 scientists 99 D-Index: 12 scientists 100 D-Index: 16 scientists 101 D-Index: 5 scientists 102 D-Index: 7 scientists 103 D-Index: 7 scientists 104 D-Index: 8 scientists 105 D-Index: 9 scientists 106 D-Index: 13 scientists 107 D-Index: 4 scientists 108 D-Index: 5 scientists 109 D-Index: 10 scientists 110 D-Index: 8 scientists 111+ D-Index: 96 scientists
30 D-Index 111+

This scientist: 54 D-Index — 68th percentile

68% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 111 D-Index or more.

Research.com Recognitions

  • 2000 - IEEE Fellow For contributions to the development of self-aligned gallium arsenide MESFET integrated circuits.

Overview

Naoki Yokoyama is affiliated with the National Institute of Advanced Industrial Science and Technology in Japan. Their research primarily focuses on the fields of immunology and microbiology, agricultural and biological sciences, and medicine. Within these broad areas, Yokoyama's work has significant contributions to parasitology, ecology, infectious diseases, plant science, and insect science.

The scientist's research topics include:

  • Vector-borne infectious diseases
  • Vector-borne animal diseases
  • Viral infections and vectors
  • Insect and pesticide research
  • Trypanosoma species research and implications
  • Helminth infection and control
  • Toxin mechanisms and immunotoxins

Naoki Yokoyama has published frequently in a range of scientific venues, including:

  • Parasitology International
  • Parasites & Vectors
  • Pathogens
  • Veterinary Parasitology Regional Studies and Reports
  • Infection Genetics and Evolution

Among recent scientific papers associated with their research are:

  • Activities of artesunate-based combinations and tafenoquine against Babesia bovis in vitro and Babesia microti in vivo, 2020, Parasites & Vectors
  • Safety and efficacy of hydroxyurea and eflornithine against most blood parasites Babesia and Theileria, 2020, PLoS ONE
  • Equine piroplasmosis: an insight into global exposure of equids from 1990 to 2019 by systematic review and meta-analysis, 2020, Parasitology
  • Therapeutic Effects of Atranorin towards the Proliferation of Babesia and Theileria Parasites, 2020, Pathogens
  • Molecular survey of Babesia, Theileria, Trypanosoma, and Anaplasma infections in camels (Camelus dromedaries) in Egypt, 2022, Parasitology International

Yokoyama frequently collaborates with other researchers. Co-authors with multiple joint publications include:

  • Thillaiampalam Sivakumar
  • Bumduuren Tuvshintulga
  • Davaajav Otgonsuren
  • Believe Ahedor
  • Xuenan Xuan

Naoki Yokoyama was awarded the title of IEEE Fellow in 2000 for contributions to the development of self-aligned gallium arsenide MESFET integrated circuits.

Best Publications

  • A New Functional, Resonant-Tunneling Hot Electron Transistor (RHET)

    Naoki Yokoyama;Kenichi Imamura;Shunichi Muto;Satoshi Hiyamizu

  • Room temperature operation of Si single-electron memory with self-aligned floating dot gate

    Anri Nakajima;Toshiro Futatsugi;Kinjiro Kosemura;Tetsu Fukano

  • 1.3-μm CW lasing of InGaAs-GaAs quantum dots at room temperature with a threshold current of 8 mA

    K. Mukai;Y. Nakata;K. Otsubo;M. Sugawara

  • Numerical analysis of ballistic-electron transport in magnetic fields by using a quantum point contact and a quantum wire.

    T. Usuki;M. Saito;M. Takatsu;R. A. Kiehl

  • Self‐consistent analysis of resonant tunneling current

    Hiroaki Ohnishi;Tsuguo Inata;Shunichi Muto;Naoki Yokoyama

  • Molecular beam epitaxial growth of InAs self-assembled quantum dots with light-emission at 1.3 μm

    Y Nakata;K Mukai;M Sugawara;K Ohtsubo

  • Single-Photon Generation in the 1.55-µm Optical-Fiber Band from an InAs/InP Quantum Dot

    Toshiyuki Miyazawa;Kazuya Takemoto;Yoshiki Sakuma;Shinichi Hirose

  • New Optical Memory Structure Using Self-Assembled InAs Quantum Dots

    Kenichi Imamura;Yoshihiro Sugiyama;Yoshiaki Nakata;Shunichi Muto

  • 1.3-/spl mu/m CW lasing characteristics of self-assembled InGaAs-GaAs quantum dots

    K. Mukai;Y. Nakata;K. Otsubo;M. Sugawara

  • Low-Temperature Synthesis of Graphene and Fabrication of Top-Gated Field Effect Transistors without Using Transfer Processes

    Daiyu Kondo;Shintaro Sato;Katsunori Yagi;Naoki Harada

  • Room temperature CW operation at the ground state of self-formed quantum dot lasers with multi-stacked dot layer

    H. Shoji;Y. Nakata;K. Mukai;Y. Sugiyama

  • Temperature dependent lasing characteristics of multi-stacked quantum dot lasers

    Hajime Shoji;Yoshiaki Nakata;Kohki Mukai;Yoshihiro Sugiyama

  • Dynamics of carrier tunneling between vertically aligned double quantum dots

    Atsushi Tackeuchi;Takamasa Kuroda;Kazuo Mase;Yoshiaki Nakata

  • An optical horn structure for single-photon source using quantum dots at telecommunication wavelengtha)

    Kazuya Takemoto;Motomu Takatsu;Shinichi Hirose;Naoki Yokoyama

  • Lasing with low threshold current and high output power from columnar-shaped InAs/GaAs quantum dots

    K. Mukai;Y. Nakata;H. Shoji;M. Sugawara

  • A polarity-controllable graphene inverter

    Naoki Harada;Katsunori Yagi;Shintaro Sato;Naoki Yokoyama

  • Effect of Silicon Doping Profile on I-V Characteristics of an AlGaAs/GaAs Resonant Tunneling Barrier Structure Grown by MBE

    Shunichi Muto;Tsuguo Inata;Hiroaki Ohnishi;Naoki Yokoyama

  • ISLAND SIZE SCALING IN INAS/GAAS SELF-ASSEMBLED QUANTUM DOTS

    Y. Ebiko;S. Muto;D. Suzuki;S. Itoh

  • Characterization of WSix/GaAs Schottky contacts

    T. Ohnishi;N. Yokoyama;H. Onodera;S. Suzuki

  • High-speed semiconductor device

    Naoki Yokoyama

  • Electrical manipulation of oligonucleotides grafted to charged surfaces

    Ulrich Rant;Kenji Arinaga;Kenji Arinaga;Shozo Fujita;Naoki Yokoyama

  • Conduction tuning of graphene based on defect-induced localization.

    Shu Nakaharai;Tomohiko Iijima;Shinichi Ogawa;Shingo Suzuki

  • Self-assembled structures of closely stacked InAs islands grown on GaAs by molecular beam epitaxy

    Yoshiaki Nakata;Yoshihiro Sugiyama;Toshiro Futatsugi;Naoki Yokoyama

Frequent Co-Authors

Yoshiaki Nakata
Yoshiaki Nakata University of Tokyo
Yuji Awano
Yuji Awano Keio University
Hiroshi Ishikawa
Hiroshi Ishikawa National Institute of Advanced Industrial Science and Technology
Yasuhiko Arakawa
Yasuhiko Arakawa University of Tokyo
Takashi Mimura
Takashi Mimura Fujitsu (Japan)
Seigo Tarucha
Seigo Tarucha University of Tokyo
Gerhard Abstreiter
Gerhard Abstreiter Technical University of Munich
Yoshinobu Baba
Yoshinobu Baba Nagoya University
Manabu Tokeshi
Manabu Tokeshi Hokkaido University

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