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Shigenobu Yamakoshi

Shigenobu Yamakoshi

D-Index & Metrics

Electronics and Electrical Engineering

D-Index
46
Citations
14957
World Ranking
3308
National Ranking
120

Overview

Shigenobu Yamakoshi is affiliated with Fujitsu in Japan and has contributed extensively to research in the fields of Materials Science and Energy. Their work primarily focuses on the chemistry and physics of oxide materials, emphasizing Ga2O3 and related compounds, as well as ZnO doping and properties. The scientist's expertise spans materials chemistry, electronic, optical, and magnetic materials, along with renewable energy, sustainability, and environmental studies.

Yamakoshi's research covers several key topics:

  • Ga2O3 and related materials
  • ZnO doping and properties
  • Advanced Photocatalysis Techniques
  • Electronic and Structural Properties of Oxides

Frequent collaborators with whom Yamakoshi has co-authored work include Akito Kuramata, Kohei Sasaki, Yuki Ueda, Takuya Igarashi, and Kimiyoshi Koshi. The scientist has published predominantly in the following venues:

  • Applied Physics Letters
  • Japanese Journal of Applied Physics
  • ECS Journal of Solid State Science and Technology
  • physica status solidi (b)

Representative publications illustrate the focus on Ga2O3 crystal growth and properties:

  • Two-inch Fe-doped β-Ga2O3 (010) substrates prepared using vertical Bridgman method, 2023, Japanese Journal of Applied Physics
  • Effect of substrate orientation on homoepitaxial growth of β-Ga2O3 by halide vapor phase epitaxy, 2022, Applied Physics Letters
  • Effects of Oxygen Annealing of β-Ga2O3 Epilayers on the Properties of Vertical Schottky Barrier Diodes, 2020, ECS Journal of Solid State Science and Technology
  • Growth of 6 Inch Diameter β-Ga2O3 Crystal by the Vertical Bridgman Method, 2025, physica status solidi (b)
  • Selective observation of transverse optical phonons of Au modes to evaluate free charge carrier parameters in β-Ga2O3 substrate and homoepitaxial film, 2021, Applied Physics Letters

Yamakoshi's contributions reflect interdisciplinary aspects of materials science, combining advanced crystal growth techniques with electrical and optical characterization of oxides. Their research also intersects with studies on photocatalysis and environmental sustainability through energy-related applications.

Best Publications

  • Gallium oxide (Ga2O3) metal-semiconductor field-effect transistors on single-crystal β-Ga2O3 (010) substrates

    Masataka Higashiwaki;Kohei Sasaki;Akito Kuramata;Takekazu Masui

  • Recent progress in Ga2O3 power devices

    Masataka Higashiwaki;Kohei Sasaki;Hisashi Murakami;Yoshinao Kumagai

  • High-quality β-Ga2O3 single crystals grown by edge-defined film-fed growth

    Akito Kuramata;Kimiyoshi Koshi;Shinya Watanabe;Yu Yamaoka

  • Depletion-mode Ga2O3 metal-oxide-semiconductor field-effect transistors on β-Ga2O3 (010) substrates and temperature dependence of their device characteristics

    Masataka Higashiwaki;Kohei Sasaki;Takafumi Kamimura;Man Hoi Wong

  • Device-Quality β-Ga2O3 Epitaxial Films Fabricated by Ozone Molecular Beam Epitaxy

    Kohei Sasaki;Akito Kuramata;Takekazu Masui;Encarnación G. Víllora

  • Development of gallium oxide power devices

    Masataka Higashiwaki;Kohei Sasaki;Akito Kuramata;Takekazu Masui

  • 1-kV vertical Ga2O3 field-plated Schottky barrier diodes

    Keita Konishi;Ken Goto;Hisashi Murakami;Yoshinao Kumagai

  • Field-Plated Ga 2 O 3 MOSFETs With a Breakdown Voltage of Over 750 V

    ManHoi Wong;Kohei Sasaki;Akito Kuramata;Shigenobu Yamakoshi

  • Field-Plated Ga 2 O 3 MOSFETs With a Breakdown Voltage of Over 750 V

    Man Hoi Wong;Kohei Sasaki;Akito Kuramata;Shigenobu Yamakoshi

  • $\hbox{Ga}_{2} \hbox{O}_{3}$ Schottky Barrier Diodes Fabricated by Using Single-Crystal $eta$ – $\hbox{Ga}_{2} \hbox{O}_{3}$ (010) Substrates

    K. Sasaki;M. Higashiwaki;A. Kuramata;T. Masui

  • Stability in single longitudinal mode operation in GaInAsP/InP phase-adjusted DFB lasers

    H. Soda;Y. Kotaki;H. Sudo;H. Ishikawa

  • Temperature-dependent capacitance–voltage and current–voltage characteristics of Pt/Ga2O3 (001) Schottky barrier diodes fabricated on n––Ga2O3 drift layers grown by halide vapor phase epitaxy

    Masataka Higashiwaki;Keita Konishi;Kohei Sasaki;Ken Goto

  • Si-Ion Implantation Doping in β-Ga2O3 and Its Application to Fabrication of Low-Resistance Ohmic Contacts

    Kohei Sasaki;Masataka Higashiwaki;Akito Kuramata;Takekazu Masui

  • MBE grown Ga2O3 and its power device applications

    Kohei Sasaki;Masataka Higashiwaki;Masataka Higashiwaki;Akito Kuramata;Takekazu Masui

  • First Demonstration of Ga 2 O 3 Trench MOS-Type Schottky Barrier Diodes

    Kohei Sasaki;Daiki Wakimoto;Quang Tu Thieu;Yuki Koishikawa

  • Band alignment and electrical properties of Al2O3/β-Ga2O3 heterojunctions

    Takafumi Kamimura;Kohei Sasaki;Man Hoi Wong;Daivasigamani Krishnamurthy

  • Halide vapor phase epitaxy of Si doped β-Ga2O3 and its electrical properties

    Ken Goto;Keita Konishi;Hisashi Murakami;Yoshinao Kumagai

  • Enhancement-mode Ga2O3 MOSFETs with Si-ion-implanted source and drain

    Man Hoi Wong;Yoshiaki Nakata;Akito Kuramata;Shigenobu Yamakoshi

  • Growth temperature dependences of structural and electrical properties of Ga2O3 epitaxial films grown on β-Ga2O3 (010) substrates by molecular beam epitaxy

    Kohei Sasaki;Masataka Higashiwaki;Akito Kuramata;Takekazu Masui

  • Carrier confinement observed at modulation-doped β-(Al x Ga1− x )2O3/Ga2O3 heterojunction interface

    Takayoshi Oshima;Yuji Kato;Naoto Kawano;Akito Kuramata

  • Electron channel mobility in silicon-doped Ga2O3 MOSFETs with a resistive buffer layer

    Man Hoi Wong;Kohei Sasaki;Akito Kuramata;Shigenobu Yamakoshi

Frequent Co-Authors

Akito Kuramata
Akito Kuramata Novel Crystal Technology, Inc
Masataka Higashiwaki
Masataka Higashiwaki Osaka Metropolitan University
Kohei Sasaki
Kohei Sasaki Novel Crystal Technology, Inc
Man Hoi Wong
Man Hoi Wong Hong Kong University of Science and Technology
Yoshinao Kumagai
Yoshinao Kumagai Tokyo University of Agriculture and Technology
Bo Monemar
Bo Monemar Linköping University
Osamu Wada
Osamu Wada Kobe University
Yoshiaki Nakata
Yoshiaki Nakata University of Tokyo
Makoto Kasu
Makoto Kasu Saga University
Takeshi Ohshima
Takeshi Ohshima Japan Atomic Energy Agency

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