World's Best Scientists 2026 revealed!

D-Index & Metrics

Materials Science

D-Index
46
Citations
5902
World Ranking
11570
National Ranking
2693

Randhir P. S. Thakur publication distribution in Materials Science in 2026

The chart shows the distribution of publications by all Research.com ranked scientists in the field of Materials Science in 2026. The highlighted bar marks where Randhir P. S. Thakur sits on this spectrum.

50–69 publications: 28 scientists 70–89 publications: 152 scientists 90–109 publications: 356 scientists 110–129 publications: 487 scientists 130–149 publications: 723 scientists 150–169 publications: 835 scientists 170–189 publications: 850 scientists 190–209 publications: 891 scientists 210–229 publications: 862 scientists 230–249 publications: 766 scientists 250–269 publications: 726 scientists 270–289 publications: 665 scientists 290–309 publications: 593 scientists 310–329 publications: 537 scientists 330–349 publications: 477 scientists 350–369 publications: 440 scientists 370–389 publications: 356 scientists 390–409 publications: 321 scientists 410–429 publications: 256 scientists 430–449 publications: 246 scientists 450–469 publications: 216 scientists 470–489 publications: 212 scientists 490–509 publications: 174 scientists 510–529 publications: 194 scientists 530–549 publications: 162 scientists 550–569 publications: 131 scientists 570–589 publications: 111 scientists 590–609 publications: 103 scientists 610–629 publications: 99 scientists 630–649 publications: 77 scientists 650–669 publications: 92 scientists 670–689 publications: 56 scientists 690–709 publications: 53 scientists 710–729 publications: 53 scientists 730–749 publications: 38 scientists 750–769 publications: 52 scientists 770–789 publications: 43 scientists 790–809 publications: 38 scientists 810–829 publications: 34 scientists 830–849 publications: 25 scientists 850–869 publications: 18 scientists 870–889 publications: 20 scientists 890–909 publications: 24 scientists 910–929 publications: 27 scientists 930–949 publications: 20 scientists 950–969 publications: 17 scientists 970–989 publications: 10 scientists 990–1,009 publications: 16 scientists 1,010–1,029 publications: 13 scientists 1,030–1,049 publications: 12 scientists 1,050–1,069 publications: 9 scientists 1,070–1,089 publications: 8 scientists 1,090–1,109 publications: 7 scientists 1,110–1,129 publications: 9 scientists 1,130–1,149 publications: 2 scientists 1,150–1,162 publications: 5 scientists 1,163+ publications: 100 scientists
50 publications 1,163+

This scientist: 157 publications — 16th percentile

16% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 1,163 publications or more.

Randhir P. S. Thakur D-index placement in Materials Science in 2026

The chart shows the D-index (discipline H-index) distribution of Materials Science scientists ranked by Research.com in 2026. The highlighted bar marks where Randhir P. S. Thakur sits on this spectrum.

40–41 D-Index: 211 scientists 42–43 D-Index: 450 scientists 44–45 D-Index: 612 scientists 46–47 D-Index: 612 scientists 48–49 D-Index: 598 scientists 50–51 D-Index: 657 scientists 52–53 D-Index: 667 scientists 54–55 D-Index: 621 scientists 56–57 D-Index: 597 scientists 58–59 D-Index: 610 scientists 60–61 D-Index: 587 scientists 62–63 D-Index: 606 scientists 64–65 D-Index: 533 scientists 66–67 D-Index: 490 scientists 68–69 D-Index: 469 scientists 70–71 D-Index: 378 scientists 72–73 D-Index: 421 scientists 74–75 D-Index: 359 scientists 76–77 D-Index: 323 scientists 78–79 D-Index: 299 scientists 80–81 D-Index: 230 scientists 82–83 D-Index: 210 scientists 84–85 D-Index: 195 scientists 86–87 D-Index: 203 scientists 88–89 D-Index: 175 scientists 90–91 D-Index: 175 scientists 92–93 D-Index: 142 scientists 94–95 D-Index: 121 scientists 96–97 D-Index: 117 scientists 98–99 D-Index: 107 scientists 100–101 D-Index: 88 scientists 102–103 D-Index: 85 scientists 104–105 D-Index: 68 scientists 106–107 D-Index: 62 scientists 108–109 D-Index: 57 scientists 110–111 D-Index: 45 scientists 112–113 D-Index: 49 scientists 114–115 D-Index: 50 scientists 116–117 D-Index: 34 scientists 118–119 D-Index: 38 scientists 120–121 D-Index: 37 scientists 122–123 D-Index: 29 scientists 124–125 D-Index: 28 scientists 126–127 D-Index: 24 scientists 128–129 D-Index: 33 scientists 130–131 D-Index: 28 scientists 132–133 D-Index: 21 scientists 134–135 D-Index: 20 scientists 136–137 D-Index: 23 scientists 138–139 D-Index: 17 scientists 140–141 D-Index: 12 scientists 142–143 D-Index: 17 scientists 144–145 D-Index: 21 scientists 146–147 D-Index: 13 scientists 148–149 D-Index: 11 scientists 150–151 D-Index: 14 scientists 152–153 D-Index: 13 scientists 154–155 D-Index: 9 scientists 156–157 D-Index: 10 scientists 158–159 D-Index: 7 scientists 160–161 D-Index: 4 scientists 162–163 D-Index: 4 scientists 164 D-Index: 3 scientists 165+ D-Index: 98 scientists
40 D-Index 165+

This scientist: 46 D-Index — 12th percentile

12% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 165 D-Index or more.

Research.com Recognitions

  • 2013 - IEEE Fellow For leadership in development and implementation of single-wafer technology in semiconductor manufacturing

Overview

Randhir P. S. Thakur is affiliated with Tata Consultancy Services Venture in the United States. Their recent research contributions include work published in the IARJSET journal.

Thakur's recent paper titled Macnum Wheel: An Emerging Trend for Material Handling Equipment in Industries was published in 2024 in IARJSET.

Their frequent co-authors include:

  • Prof. S. V. Tawade
  • S. Tambe
  • Ajay Duduskar
  • Mukund Gaikwad
  • Ganesh Ghogare

Their publications have appeared in the following venues:

  • IARJSET

Randhir P. S. Thakur was awarded the IEEE Fellow distinction in 2013 for leadership in the development and implementation of single-wafer technology in semiconductor manufacturing.

Best Publications

  • Methods for forming a high dielectric film

    Scott J. Deboer;Randhir P. S. Thakur

  • Method and apparatus for reducing isolation stress in integrated circuits

    Randhir P. S. Thakur;Kevin G. Donohoe;Zhiqiang Wu;Alan R. Reinberg

  • Method for forming enhanced capacitance stacked capacitor structures using hemi-spherical grain polysilicon

    Charles H. Dennison;Randhir P. S. Thakur

  • Method for efficient manufacturing of integrated circuits

    Lyle Breiner;Randhir P. S. Thakur

  • Semiconductor structure having a doped conductive layer

    Yongjun Hu;Pai-Hung Pan;Er-Xuan Ping;Randhir P. S. Thakur

  • Method to prepare hemi-spherical grain (HSG) silicon using a fluorine based gas mixture and high vacuum anneal

    Randhir P. S. Thakur

  • Method of manufacturing small geometry MOS field-effect transistors having improved barrier layer to hot electron injection

    Aftab Ahmad;Randhir P. S. Thakur

  • Method of forming capacitors containing tantalum

    Scott Jeffrey DeBoer;F. Daniel Gealy;Randhir P. S. Thakur

  • Forming a conductive structure in a semiconductor device

    Ronald A. Weimer;Yongjun Jeff Hu;Pai Hung Pan;Deepa Ratakonda

  • Method for forming hemispherical grained silicon

    Ronald A. Weimer;Randhir P. S. Thakur;Avishai Kepten;Michael Sendler

  • Method for cleaning semiconductor wafers

    Randhir P. S. Thakur

  • Method to form hemi-spherical grain (HSG) silicon from amorphous silicon

    Randhir P. S. Thakur;Lyle D. Breiner

  • Method to form hemi-spherical grain (HSG) silicon

    Randhir P. S. Thakur;Lyle D. Breiner

  • Control and 3-dimensional simulation model of temperature variations in a rapid thermal processing machine

    Randhir P. S. Thakur

  • Semiconductor processing method of providing a conductively doped layer of hemispherical grain polysilicon and a hemispherical grain polysilicon layer produced according to the method

    John K. Zahurak;Klaus F. Schuegraf;Randhir P.S. Thakur

  • Capacitor/antifuse structure having a barrier-layer electrode and improved barrier layer

    Randhir P. S. Thakur;Garry A. Mercaldi;Michael Nuttall

  • Method for forming a self-aligned isolation structure utilizing sidewall spacers as an etch mask and remaining as a portion of the isolation structure

    Fernando Gonzalez;David L. Chapek;Randhir P. S. Thakur

  • Some photoeffect roles in rapid isothermal processing

    R. Singh;S. Sinha;R. P. S. Thakur;P. Chou

  • Method for fabricating stacked layer Si3 N4 for low leakage high capacitance films using rapid thermal nitridation

    Gurtej S. Sandhu;Randhir P. S. Thakur

  • Somatic embryogenesis and its conver- sion into plantlets in a multipurpose bamboo, Dendrocalamus hamiltonii Nees et Arn. Ex Munro

    S Godbole;A Sood;R Thakur;Mohit Sharma

Frequent Co-Authors

Husam N. Alshareef
Husam N. Alshareef King Abdullah University of Science and Technology
Gurtej S. Sandhu
Gurtej S. Sandhu Micron (United States)
Fernando Gonzalez
Fernando Gonzalez Micron (United States)
Howard E. Rhodes
Howard E. Rhodes Micron (United States)
Ajeet Rohatgi
Ajeet Rohatgi Georgia Institute of Technology
Charles H. Dennison
Charles H. Dennison Intel (United States)
Tyler A. Lowrey
Tyler A. Lowrey Independent Scientist / Consultant, US
Pierre C. Fazan
Pierre C. Fazan Micron (United States)
Dim-Lee Kwong
Dim-Lee Kwong National University of Singapore

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