World's Best Scientists 2026 revealed!
Charles H. Dennison

Charles H. Dennison

D-Index & Metrics

Electronics and Electrical Engineering

D-Index
39
Citations
5815
World Ranking
4734
National Ranking
1659

Overview

What is he best known for?

The fields of study he is best known for:

  • Electrical engineering
  • Semiconductor
  • Integrated circuit

His primary areas of study are Optoelectronics, Layer, Capacitor, Electrical engineering and Electronic engineering. His work deals with themes such as Transistor and Substrate, which intersect with Optoelectronics. Charles H. Dennison has included themes like Capacitance and Spark plug in his Layer study.

His work carried out in the field of Capacitor brings together such families of science as Dram, Bit line, Dielectric and Electrically conductive. In his research, Semiconductor memory and Field-effect transistor is intimately related to Node, which falls under the overarching field of Dielectric. The Electronic engineering study combines topics in areas such as Composite material and Chemical-mechanical planarization.

His most cited work include:

  • Method of forming a bit line over capacitor array of memory cells (281 citations)
  • Optimized container stacked capacitor DRAM cell utilizing sacrificial oxide deposition and chemical mechanical polishing (192 citations)
  • Process for fabricating a DRAM array having feature widths that transcend the resolution limit of available photolithography (186 citations)

What are the main themes of his work throughout his whole career to date?

His main research concerns Optoelectronics, Layer, Electrical engineering, Capacitor and Electronic engineering. His research in Optoelectronics intersects with topics in Field-effect transistor and Transistor. Charles H. Dennison combines subjects such as Electrical conductor and Wafer with his study of Layer.

His Capacitor research is multidisciplinary, incorporating elements of Dram, Node, Bit line and Memory cell. His Electronic engineering study combines topics in areas such as Semiconductor device, Capacitance, Chemical-mechanical planarization, Dopant and Integrated circuit. His Etching study integrates concerns from other disciplines, such as Trench and Nitride.

He most often published in these fields:

  • Optoelectronics (75.65%)
  • Layer (44.04%)
  • Electrical engineering (36.27%)

What were the highlights of his more recent work (between 1998-2018)?

  • Optoelectronics (75.65%)
  • Layer (44.04%)
  • Electrical conductor (20.73%)

In recent papers he was focusing on the following fields of study:

Charles H. Dennison spends much of his time researching Optoelectronics, Layer, Electrical conductor, Electrical engineering and Transistor. His Optoelectronics study frequently involves adjacent topics like Field-effect transistor. His Layer research includes themes of Node, Electronic engineering and Doping.

His Electrical conductor research incorporates themes from Substrate, Spark plug and Thin-film transistor. His Capacitor study in the realm of Electrical engineering interacts with subjects such as Impurity. His Transistor research is multidisciplinary, relying on both Silicon on insulator and Insulator.

Between 1998 and 2018, his most popular works were:

  • Silicon on insulator DRAM process utilizing both fully and partially depleted devices (68 citations)
  • Graded LDD implant process for sub-half-micron MOS devices (60 citations)
  • Method of storing a temperature threshold in an integrated circuit, method of modifying operation of dynamic random access memory in response to temperature, programmable temperature sensing circuit and memory integrated circuit (45 citations)

In his most recent research, the most cited papers focused on:

  • Electrical engineering
  • Semiconductor
  • Integrated circuit

The scientist’s investigation covers issues in Optoelectronics, Dynamic random-access memory, Integrated circuit, Computer hardware and Electrical engineering. Charles H. Dennison is interested in Silicon on insulator, which is a field of Optoelectronics. His study brings together the fields of Electronic engineering and Integrated circuit.

In his study, Electrical conductor is strongly linked to Semiconductor device, which falls under the umbrella field of Electronic engineering. In his study, Transistor, CMOS and PMOS logic is inextricably linked to Substrate, which falls within the broad field of Electrical engineering. His studies deal with areas such as Bit line, Stress, Buffer and Dopant as well as Capacitor.

Best Publications

  • Method of forming a bit line over capacitor array of memory cells

    Charles H. Dennison

  • Optimized container stacked capacitor DRAM cell utilizing sacrificial oxide deposition and chemical mechanical polishing

    Charles H. Dennison;Michael A. Walker

  • Process for fabricating a DRAM array having feature widths that transcend the resolution limit of available photolithography

    Tyler A. Lowrey;Randal W. Chance;D. Mark Durcan;Ruojia Lee

  • Method of forming a bit line over capacitor array of memory cells and an array of bit line over capacitor array of memory cells

    Mark Jost;Charles Dennison

  • Reduced mask CMOS process for fabricating stacked capacitor multi-megabit dynamic random access memories utilizing single etch stop layer for contacts

    Charles H. Dennison

  • Semiconductor processing methods of forming stacked capacitors

    Charles H. Dennison;Michael A. Walker

  • Method for forming enhanced capacitance stacked capacitor structures using hemi-spherical grain polysilicon

    Charles H. Dennison;Randhir P. S. Thakur

  • MULTIPIN LAMINATED CAPACITOR AND ITS MANUFACTURE

    Dennison Charles H

  • Method for formation of a stacked capacitor

    Yauh-Ching Liu;Pierre Fazan;Hiang Chan;Howard E. Rhodes

  • Tapered via, structures made therewith, and methods of producing same

    Charles H. Dennison

  • Method for fabrication of close-tolerance lines and sharp emission tips on a semiconductor wafer

    Charles H. Dennison

  • Semiconductor processing method of forming complementary N-type doped and P-type doped active regions within a semiconductor substrate

    Mark Helm;Charles Dennison

  • Method for an integrated circuit contact

    Charles H Dennison;Trung T. Doan

  • Fully planarized thin film transistor (TFT) and process to fabricate same

    Charles H. Dennison;Monte Manning

  • Silicon on insulator DRAM process utilizing both fully and partially depleted devices

    Charles H. Dennison;John K. Zahurak

  • Fabrication of complementary n-channel and p-channel circuits (ICs) useful in the manufacture of dynamic random access memories (drams)

    Charles H. Dennison;Tyler A. Lowrey

  • Method for making electrical contact with an active area through sub-micron contact openings and a semiconductor device

    Charles H. Dennison;Guy T. Blalock

  • Integrated circuitry comprising halo regions and LDD regions

    Charles H. Dennison;Mark Helm

  • Spacer isolation method for minimizing parasitic sidewall capacitance and creating fully recessed field oxide regions

    Charles H. Dennison;Fernando Gonzalez

  • Method for increasing capacitive surface area of a conductive material in semiconductor processing and stacked memory cell capacitor

    Yauh-Ching Liu;Pierre C. Fazan;Hiang C. Chan;Charles H. Dennison

Frequent Co-Authors

Pierre C. Fazan
Pierre C. Fazan Micron (United States)
Howard E. Rhodes
Howard E. Rhodes Micron (United States)
Brent Keeth
Brent Keeth Micron (United States)
Tyler A. Lowrey
Tyler A. Lowrey Independent Scientist / Consultant, US
Fernando Gonzalez
Fernando Gonzalez Micron (United States)
Randhir P. S. Thakur
Randhir P. S. Thakur Tata Consultancy Services Venture
Gurtej S. Sandhu
Gurtej S. Sandhu Micron (United States)

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