Sung Hyun Jo mostly deals with Optoelectronics, Memristor, Resistive touchscreen, Nanoelectronics and Crossbar switch. He studied Optoelectronics and Electronic engineering that intersect with Electrode array, Nanopillar and Layer. Sung Hyun Jo focuses mostly in the field of Memristor, narrowing it down to topics relating to Voltage and, in certain cases, Spice, Tunnel effect, Schottky barrier and Quantum tunnelling.
Sung Hyun Jo has included themes like Nanoscopic scale, CMOS and Nano- in his Resistive touchscreen study. His Nanoelectronics study incorporates themes from Diode and Nanostructure. His studies deal with areas such as Crossbar array and Resistive random-access memory as well as Crossbar switch.
His scientific interests lie mostly in Optoelectronics, Resistive random-access memory, Electrical engineering, Electronic engineering and Terminal. His Optoelectronics study which covers Resistive touchscreen that intersects with Nano-. His Resistive random-access memory study also includes fields such as
His research investigates the link between Electronic engineering and topics such as Dielectric that cross with problems in Buffer and Substrate. His work in Terminal addresses issues such as Memory cell, which are connected to fields such as Computer hardware. Sung Hyun Jo combines subjects such as CMOS and Nanotechnology, Nanostructure with his study of Silicon.
The scientist’s investigation covers issues in Resistive random-access memory, Optoelectronics, Electrical engineering, Memory cell and Electrical conductor. His study in Resistive random-access memory is interdisciplinary in nature, drawing from both Electronic engineering and Substrate. His Electronic engineering research is multidisciplinary, incorporating elements of Crossbar array, Power consumption and Computer data storage.
His Optoelectronics study integrates concerns from other disciplines, such as Terminal and Protein filament. His work is dedicated to discovering how Terminal, Resistive touchscreen are connected with Pulse and other disciplines. His Memory cell study deals with Computer hardware intersecting with Signal and Isolation.
The scientist’s investigation covers issues in Electrical engineering, Memory cell, Resistive random-access memory, Non-volatile memory and Transistor. His work carried out in the field of Electrical engineering brings together such families of science as Optoelectronics and Computer hardware. His research on Memory cell frequently links to adjacent areas such as Integrated circuit.
His research in Static induction transistor intersects with topics in Terminal, Voltage source, NMOS logic and Capacitor. His research integrates issues of Resistive touchscreen and Floating body effect in his study of Voltage source. His work on Current limiting as part of general Voltage study is frequently linked to Electric field, therefore connecting diverse disciplines of science.
This overview was generated by a machine learning system which analysed the scientist’s body of work. If you have any feedback, you can contact us here.
Nanoscale Memristor Device as Synapse in Neuromorphic Systems
Sung Hyun Jo;Ting Chang;Idongesit Ebong;Bhavitavya B. Bhadviya.
Nano Letters (2010)
Short-term memory to long-term memory transition in a nanoscale memristor.
Ting Chang;Sung-Hyun Jo;Wei Lu.
ACS Nano (2011)
High-density crossbar arrays based on a Si memristive system.
Sung Hyun Jo;Kuk Hwan Kim;Wei Lu.
Nano Letters (2009)
CMOS compatible nanoscale nonvolatile resistance switching memory.
Sung Hyun Jo;Wei Lu.
Nano Letters (2008)
Programmable resistance switching in nanoscale two-terminal devices.
Sung Hyun Jo;Kuk Hwan Kim;Wei Lu.
Nano Letters (2009)
Synaptic behaviors and modeling of a metal oxide memristive device
Ting Chang;Sung-Hyun Jo;Kuk-Hwan Kim;Patrick Sheridan.
Applied Physics A (2011)
Nanoscale resistive memory with intrinsic diode characteristics and long endurance
Kuk-Hwan Kim;Sung Hyun Jo;Siddharth Gaba;Wei Lu.
Applied Physics Letters (2010)
Silicon-based nanoscale resistive device with adjustable resistance
Wei Lu;Sung Hyun Jo;Kuk-Hwan Kim.
(2009)
Non-volatile solid state resistive switching devices
Wei Lu;Sung Hyun Jo.
(2007)
3D-stackable crossbar resistive memory based on Field Assisted Superlinear Threshold (FAST) selector
Sung Hyun Jo;Tanmay Kumar;Sundar Narayanan;Wei D. Lu.
international electron devices meeting (2014)
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