D-Index & Metrics Best Publications

D-Index & Metrics D-index (Discipline H-index) only includes papers and citation values for an examined discipline in contrast to General H-index which accounts for publications across all disciplines.

Discipline name D-index D-index (Discipline H-index) only includes papers and citation values for an examined discipline in contrast to General H-index which accounts for publications across all disciplines. Citations Publications World Ranking National Ranking
Electronics and Electrical Engineering D-index 31 Citations 9,451 73 World Ranking 4500 National Ranking 1679

Overview

What is he best known for?

The fields of study he is best known for:

  • Integrated circuit
  • Electrical engineering
  • Transistor

Sung Hyun Jo mostly deals with Optoelectronics, Memristor, Resistive touchscreen, Nanoelectronics and Crossbar switch. He studied Optoelectronics and Electronic engineering that intersect with Electrode array, Nanopillar and Layer. Sung Hyun Jo focuses mostly in the field of Memristor, narrowing it down to topics relating to Voltage and, in certain cases, Spice, Tunnel effect, Schottky barrier and Quantum tunnelling.

Sung Hyun Jo has included themes like Nanoscopic scale, CMOS and Nano- in his Resistive touchscreen study. His Nanoelectronics study incorporates themes from Diode and Nanostructure. His studies deal with areas such as Crossbar array and Resistive random-access memory as well as Crossbar switch.

His most cited work include:

  • Nanoscale Memristor Device as Synapse in Neuromorphic Systems (2647 citations)
  • Short-term memory to long-term memory transition in a nanoscale memristor. (546 citations)
  • High-density crossbar arrays based on a Si memristive system. (529 citations)

What are the main themes of his work throughout his whole career to date?

His scientific interests lie mostly in Optoelectronics, Resistive random-access memory, Electrical engineering, Electronic engineering and Terminal. His Optoelectronics study which covers Resistive touchscreen that intersects with Nano-. His Resistive random-access memory study also includes fields such as

  • Crossbar switch and related Nanoscopic scale and Reliability,
  • Diode that intertwine with fields like Nanoelectronics.

His research investigates the link between Electronic engineering and topics such as Dielectric that cross with problems in Buffer and Substrate. His work in Terminal addresses issues such as Memory cell, which are connected to fields such as Computer hardware. Sung Hyun Jo combines subjects such as CMOS and Nanotechnology, Nanostructure with his study of Silicon.

He most often published in these fields:

  • Optoelectronics (47.95%)
  • Resistive random-access memory (35.62%)
  • Electrical engineering (32.88%)

What were the highlights of his more recent work (between 2014-2019)?

  • Resistive random-access memory (35.62%)
  • Optoelectronics (47.95%)
  • Electrical engineering (32.88%)

In recent papers he was focusing on the following fields of study:

The scientist’s investigation covers issues in Resistive random-access memory, Optoelectronics, Electrical engineering, Memory cell and Electrical conductor. His study in Resistive random-access memory is interdisciplinary in nature, drawing from both Electronic engineering and Substrate. His Electronic engineering research is multidisciplinary, incorporating elements of Crossbar array, Power consumption and Computer data storage.

His Optoelectronics study integrates concerns from other disciplines, such as Terminal and Protein filament. His work is dedicated to discovering how Terminal, Resistive touchscreen are connected with Pulse and other disciplines. His Memory cell study deals with Computer hardware intersecting with Signal and Isolation.

Between 2014 and 2019, his most popular works were:

  • Cross-Point Resistive RAM Based on Field-Assisted Superlinear Threshold Selector (71 citations)
  • Sensing a non-volatile memory device utilizing selector device holding characteristics (17 citations)
  • High density selector-based non volatile memory cell and fabrication (14 citations)

In his most recent research, the most cited papers focused on:

  • Electrical engineering
  • Integrated circuit
  • Transistor

The scientist’s investigation covers issues in Electrical engineering, Memory cell, Resistive random-access memory, Non-volatile memory and Transistor. His work carried out in the field of Electrical engineering brings together such families of science as Optoelectronics and Computer hardware. His research on Memory cell frequently links to adjacent areas such as Integrated circuit.

His research in Static induction transistor intersects with topics in Terminal, Voltage source, NMOS logic and Capacitor. His research integrates issues of Resistive touchscreen and Floating body effect in his study of Voltage source. His work on Current limiting as part of general Voltage study is frequently linked to Electric field, therefore connecting diverse disciplines of science.

This overview was generated by a machine learning system which analysed the scientist’s body of work. If you have any feedback, you can contact us here.

Best Publications

Nanoscale Memristor Device as Synapse in Neuromorphic Systems

Sung Hyun Jo;Ting Chang;Idongesit Ebong;Bhavitavya B. Bhadviya.
Nano Letters (2010)

3745 Citations

Short-term memory to long-term memory transition in a nanoscale memristor.

Ting Chang;Sung-Hyun Jo;Wei Lu.
ACS Nano (2011)

776 Citations

High-density crossbar arrays based on a Si memristive system.

Sung Hyun Jo;Kuk Hwan Kim;Wei Lu.
Nano Letters (2009)

729 Citations

CMOS compatible nanoscale nonvolatile resistance switching memory.

Sung Hyun Jo;Wei Lu.
Nano Letters (2008)

547 Citations

Programmable resistance switching in nanoscale two-terminal devices.

Sung Hyun Jo;Kuk Hwan Kim;Wei Lu.
Nano Letters (2009)

399 Citations

Synaptic behaviors and modeling of a metal oxide memristive device

Ting Chang;Sung-Hyun Jo;Kuk-Hwan Kim;Patrick Sheridan.
Applied Physics A (2011)

382 Citations

Nanoscale resistive memory with intrinsic diode characteristics and long endurance

Kuk-Hwan Kim;Sung Hyun Jo;Siddharth Gaba;Wei Lu.
Applied Physics Letters (2010)

266 Citations

Silicon-based nanoscale resistive device with adjustable resistance

Wei Lu;Sung Hyun Jo;Kuk-Hwan Kim.
(2009)

210 Citations

Non-volatile solid state resistive switching devices

Wei Lu;Sung Hyun Jo.
(2007)

208 Citations

3D-stackable crossbar resistive memory based on Field Assisted Superlinear Threshold (FAST) selector

Sung Hyun Jo;Tanmay Kumar;Sundar Narayanan;Wei D. Lu.
international electron devices meeting (2014)

179 Citations

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