The chart shows the distribution of publications by all Research.com ranked scientists in the field of Materials Science in 2026. The highlighted bar marks where R. Stanley Williams sits on this spectrum.
This scientist: 621 publications — 93rd percentile
93% of scientists in this discipline score the same or lower.
The last bar groups every scientist with 1,163 publications or more.
The chart shows the D-index (discipline H-index) distribution of Materials Science scientists ranked by Research.com in 2026. The highlighted bar marks where R. Stanley Williams sits on this spectrum.
This scientist: 113 D-Index — 95th percentile
95% of scientists in this discipline score the same or lower.
The last bar groups every scientist with 165 D-Index or more.
R. Stanley Williams is affiliated with Texas A&M University in the United States and has focused their research on the field of Engineering, with particular emphasis on Electrical and Electronic Engineering. Their work spans several subfields including Cellular and Molecular Neuroscience, Materials Chemistry, Polymers and Plastics, and Cognitive Neuroscience.
The primary research topics explored by Williams include Advanced Memory and Neural Computing, Ferroelectric and Negative Capacitance Devices, Neuroscience and Neural Engineering, Neural dynamics and brain function, Photoreceptor and optogenetics research, Transition Metal Oxide Nanomaterials, and Neural Networks and Reservoir Computing.
Williams has contributed to a number of recent papers, notable examples include:
Their frequent co-authors comprise a team of researchers consistently collaborating across multiple projects. The most common co-authors include:
Williams has published extensively in several venues, with repeated contributions to:
Their body of work predominantly centers on developing novel approaches to memory and neural computing systems, including neuromorphic engineering and molecular memristors. Additionally, contributions investigating the physics of memristors suggest an interdisciplinary approach that intersects materials science, electronics, and neuroscience.
Dmitri B. Strukov;Gregory S. Snider;Duncan R. Stewart;R. Stanley Williams
J. Joshua Yang;Matthew D. Pickett;Xuema Li;Douglas A. A. Ohlberg
C. P. Collier;E. W. Wong;M. Belohradský;F. M. Raymo
Zhongrui Wang;Saumil Joshi;Sergey E. Savel’ev;Hao Jiang
Julien Borghetti;Gregory S. Snider;Philip J. Kuekes;J. Joshua Yang
Can Li;Miao Hu;Miao Hu;Yunning Li;Hao Jiang
Matthew D. Pickett;Gilberto Medeiros-Ribeiro;R. Stanley Williams
J Joshua Yang;Feng Miao;Matthew D Pickett;Douglas A A Ohlberg
Gilberto Medeiros-Ribeiro;Alexander M. Bratkovski;Theodore I. Kamins;Douglas A. A. Ohlberg
Z. Li;Y. Chen;X. Li;T. I. Kamins
Yong Chen;Gun Young Jung;Douglas A A Ohlberg;Xuema Li
Matthew D. Pickett;Dmitri B. Strukov;Julien L. Borghetti;J. Joshua Yang
Can Li;Daniel Belkin;Daniel Belkin;Yunning Li;Peng Yan;Peng Yan
Antonio C Torrezan;John Paul Strachan;Gilberto Medeiros-Ribeiro;R Stanley Williams
Qiangfei Xia;Warren Robinett;Michael W. Cumbie;Neel Banerjee
J. Joshua Yang;M.-X. Zhang;John Paul Strachan;Feng Miao
Miao Hu;Catherine E. Graves;Can Li;Yunning Li
Miao Hu;John Paul Strachan;Zhiyong Li;Emmanuelle M. Grafals
Dmitri B. Strukov;R. Stanley Williams
Gregory S Snider;R Stanley Williams
Dmitri B. Strukov;Gregory S. Snider;Duncan R. Stewart;R. Stanley Williams
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