D-Index & Metrics Best Publications

D-Index & Metrics D-index (Discipline H-index) only includes papers and citation values for an examined discipline in contrast to General H-index which accounts for publications across all disciplines.

Discipline name D-index D-index (Discipline H-index) only includes papers and citation values for an examined discipline in contrast to General H-index which accounts for publications across all disciplines. Citations Publications World Ranking National Ranking
Materials Science D-index 98 Citations 48,593 506 World Ranking 596 National Ranking 236

Overview

What is he best known for?

The fields of study he is best known for:

  • Electron
  • Semiconductor
  • Optics

R. Stanley Williams mainly investigates Nanotechnology, Memristor, Optoelectronics, Nanowire and Crossbar switch. His Nanotechnology research is multidisciplinary, relying on both Lithography and Nanoimprint lithography. His research in Memristor intersects with topics in Artificial neural network, Neuromorphic engineering and Resistive random-access memory, Memistor.

R. Stanley Williams has included themes like Nanosecond, Transistor, Oxide and Electrode in his Optoelectronics study. His Nanowire study combines topics in areas such as Titanium and Silicon on insulator, Silicon. His study looks at the intersection of Crossbar switch and topics like CMOS with Set, Integrated circuit and Electronic circuit.

His most cited work include:

  • The missing memristor found (6638 citations)
  • Memristive switching mechanism for metal/oxide/metal nanodevices. (2234 citations)
  • ‘Memristive’ switches enable ‘stateful’ logic operations via material implication (1237 citations)

What are the main themes of his work throughout his whole career to date?

The scientist’s investigation covers issues in Optoelectronics, Nanotechnology, Memristor, Nanowire and Electrode. His Optoelectronics research incorporates themes from Layer, Oxide, Electrical engineering and Optics. R. Stanley Williams interconnects Lithography, Silicon and Nanoimprint lithography in the investigation of issues within Nanotechnology.

His study explores the link between Silicon and topics such as Chemical vapor deposition that cross with problems in Analytical chemistry. His Memristor research is classified as research in Electronic engineering. His Electrode study frequently draws connections between related disciplines such as Dopant.

He most often published in these fields:

  • Optoelectronics (31.36%)
  • Nanotechnology (25.59%)
  • Memristor (19.53%)

What were the highlights of his more recent work (between 2013-2021)?

  • Memristor (19.53%)
  • Optoelectronics (31.36%)
  • Nanotechnology (25.59%)

In recent papers he was focusing on the following fields of study:

His primary scientific interests are in Memristor, Optoelectronics, Nanotechnology, Neuromorphic engineering and Voltage. The concepts of his Memristor study are interwoven with issues in Artificial neural network, Resistive random-access memory and Crossbar switch. The various areas that R. Stanley Williams examines in his Optoelectronics study include Nanoscopic scale, Oxide, Electrode and Nitride.

His Nanotechnology study combines topics from a wide range of disciplines, such as Chemical physics and Nanoimprint lithography. His study in Neuromorphic engineering is interdisciplinary in nature, drawing from both Third order, Capacitance, Capacitive sensing and Electronics. His Voltage research integrates issues from Joule heating, Resistive touchscreen, Niobium oxide and Leakage.

Between 2013 and 2021, his most popular works were:

  • Memristors with diffusive dynamics as synaptic emulators for neuromorphic computing (841 citations)
  • ISAAC: a convolutional neural network accelerator with in-situ analog arithmetic in crossbars (744 citations)
  • Analogue signal and image processing with large memristor crossbars (375 citations)

In his most recent research, the most cited papers focused on:

  • Electron
  • Semiconductor
  • Optics

His main research concerns Memristor, Nanotechnology, Optoelectronics, Artificial neural network and Neuromorphic engineering. His Memristor research is within the category of Electronic engineering. His study in the fields of Nanoscopic scale under the domain of Nanotechnology overlaps with other disciplines such as Chemical substance.

His work on Waveguide as part of general Optoelectronics study is frequently connected to Low energy, therefore bridging the gap between diverse disciplines of science and establishing a new relationship between them. In his study, Arithmetic, eDRAM, Pipeline, Memistor and Design space exploration is strongly linked to Convolutional neural network, which falls under the umbrella field of Artificial neural network. His work carried out in the field of Neuromorphic engineering brings together such families of science as Capacitive sensing and Electronics.

This overview was generated by a machine learning system which analysed the scientist’s body of work. If you have any feedback, you can contact us here.

Best Publications

The missing memristor found

Dmitri B. Strukov;Gregory S. Snider;Duncan R. Stewart;R. Stanley Williams.
Nature (2008)

10185 Citations

Memristive switching mechanism for metal/oxide/metal nanodevices.

J. Joshua Yang;Matthew D. Pickett;Xuema Li;Douglas A. A. Ohlberg.
Nature Nanotechnology (2008)

3031 Citations

‘Memristive’ switches enable ‘stateful’ logic operations via material implication

Julien Borghetti;Gregory S. Snider;Philip J. Kuekes;J. Joshua Yang.
Nature (2010)

1717 Citations

Memristors with diffusive dynamics as synaptic emulators for neuromorphic computing

Zhongrui Wang;Saumil Joshi;Sergey E. Savel’ev;Hao Jiang.
Nature Materials (2017)

1377 Citations

ISAAC: a convolutional neural network accelerator with in-situ analog arithmetic in crossbars

Ali Shafiee;Anirban Nag;Naveen Muralimanohar;Rajeev Balasubramonian.
international symposium on computer architecture (2016)

1225 Citations

A Defect-Tolerant Computer Architecture: Opportunities for Nanotechnology

James R. Heath;Philip J. Kuekes;Gregory S. Snider;R. Stanley Williams.
Science (1998)

1144 Citations

Shape Transition of Germanium Nanocrystals on a Silicon (001) Surface from Pyramids to Domes

Gilberto Medeiros-Ribeiro;Alexander M. Bratkovski;Theodore I. Kamins;Douglas A. A. Ohlberg.
Science (1998)

1044 Citations

Molecular wire crossbar memory

Philip J. Kuekes;R. Stanley Williams;James R. Heath.
(1999)

1030 Citations

The mechanism of electroforming of metal oxide memristive switches

J Joshua Yang;Feng Miao;Matthew D Pickett;Douglas A A Ohlberg.
Nanotechnology (2009)

967 Citations

Nanoscale molecular-switch crossbar circuits

Yong Chen;Gun Young Jung;Douglas A A Ohlberg;Xuema Li.
Nanotechnology (2003)

939 Citations

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