R. Stanley Williams mainly investigates Nanotechnology, Memristor, Optoelectronics, Nanowire and Crossbar switch. His Nanotechnology research is multidisciplinary, relying on both Lithography and Nanoimprint lithography. His research in Memristor intersects with topics in Artificial neural network, Neuromorphic engineering and Resistive random-access memory, Memistor.
R. Stanley Williams has included themes like Nanosecond, Transistor, Oxide and Electrode in his Optoelectronics study. His Nanowire study combines topics in areas such as Titanium and Silicon on insulator, Silicon. His study looks at the intersection of Crossbar switch and topics like CMOS with Set, Integrated circuit and Electronic circuit.
The scientist’s investigation covers issues in Optoelectronics, Nanotechnology, Memristor, Nanowire and Electrode. His Optoelectronics research incorporates themes from Layer, Oxide, Electrical engineering and Optics. R. Stanley Williams interconnects Lithography, Silicon and Nanoimprint lithography in the investigation of issues within Nanotechnology.
His study explores the link between Silicon and topics such as Chemical vapor deposition that cross with problems in Analytical chemistry. His Memristor research is classified as research in Electronic engineering. His Electrode study frequently draws connections between related disciplines such as Dopant.
His primary scientific interests are in Memristor, Optoelectronics, Nanotechnology, Neuromorphic engineering and Voltage. The concepts of his Memristor study are interwoven with issues in Artificial neural network, Resistive random-access memory and Crossbar switch. The various areas that R. Stanley Williams examines in his Optoelectronics study include Nanoscopic scale, Oxide, Electrode and Nitride.
His Nanotechnology study combines topics from a wide range of disciplines, such as Chemical physics and Nanoimprint lithography. His study in Neuromorphic engineering is interdisciplinary in nature, drawing from both Third order, Capacitance, Capacitive sensing and Electronics. His Voltage research integrates issues from Joule heating, Resistive touchscreen, Niobium oxide and Leakage.
His main research concerns Memristor, Nanotechnology, Optoelectronics, Artificial neural network and Neuromorphic engineering. His Memristor research is within the category of Electronic engineering. His study in the fields of Nanoscopic scale under the domain of Nanotechnology overlaps with other disciplines such as Chemical substance.
His work on Waveguide as part of general Optoelectronics study is frequently connected to Low energy, therefore bridging the gap between diverse disciplines of science and establishing a new relationship between them. In his study, Arithmetic, eDRAM, Pipeline, Memistor and Design space exploration is strongly linked to Convolutional neural network, which falls under the umbrella field of Artificial neural network. His work carried out in the field of Neuromorphic engineering brings together such families of science as Capacitive sensing and Electronics.
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The missing memristor found
Dmitri B. Strukov;Gregory S. Snider;Duncan R. Stewart;R. Stanley Williams.
Memristive switching mechanism for metal/oxide/metal nanodevices.
J. Joshua Yang;Matthew D. Pickett;Xuema Li;Douglas A. A. Ohlberg.
Nature Nanotechnology (2008)
‘Memristive’ switches enable ‘stateful’ logic operations via material implication
Julien Borghetti;Gregory S. Snider;Philip J. Kuekes;J. Joshua Yang.
Memristors with diffusive dynamics as synaptic emulators for neuromorphic computing
Zhongrui Wang;Saumil Joshi;Sergey E. Savel’ev;Hao Jiang.
Nature Materials (2017)
ISAAC: a convolutional neural network accelerator with in-situ analog arithmetic in crossbars
Ali Shafiee;Anirban Nag;Naveen Muralimanohar;Rajeev Balasubramonian.
international symposium on computer architecture (2016)
A Defect-Tolerant Computer Architecture: Opportunities for Nanotechnology
James R. Heath;Philip J. Kuekes;Gregory S. Snider;R. Stanley Williams.
Shape Transition of Germanium Nanocrystals on a Silicon (001) Surface from Pyramids to Domes
Gilberto Medeiros-Ribeiro;Alexander M. Bratkovski;Theodore I. Kamins;Douglas A. A. Ohlberg.
Molecular wire crossbar memory
Philip J. Kuekes;R. Stanley Williams;James R. Heath.
The mechanism of electroforming of metal oxide memristive switches
J Joshua Yang;Feng Miao;Matthew D Pickett;Douglas A A Ohlberg.
Nanoscale molecular-switch crossbar circuits
Yong Chen;Gun Young Jung;Douglas A A Ohlberg;Xuema Li.
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