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D-Index & Metrics

Materials Science

D-Index
65
Citations
41717
World Ranking
5491
National Ranking
1676

Feng Miao publication distribution in Materials Science in 2026

The chart shows the distribution of publications by all Research.com ranked scientists in the field of Materials Science in 2026. The highlighted bar marks where Feng Miao sits on this spectrum.

50–69 publications: 28 scientists 70–89 publications: 152 scientists 90–109 publications: 356 scientists 110–129 publications: 487 scientists 130–149 publications: 723 scientists 150–169 publications: 835 scientists 170–189 publications: 850 scientists 190–209 publications: 891 scientists 210–229 publications: 862 scientists 230–249 publications: 766 scientists 250–269 publications: 726 scientists 270–289 publications: 665 scientists 290–309 publications: 593 scientists 310–329 publications: 537 scientists 330–349 publications: 477 scientists 350–369 publications: 440 scientists 370–389 publications: 356 scientists 390–409 publications: 321 scientists 410–429 publications: 256 scientists 430–449 publications: 246 scientists 450–469 publications: 216 scientists 470–489 publications: 212 scientists 490–509 publications: 174 scientists 510–529 publications: 194 scientists 530–549 publications: 162 scientists 550–569 publications: 131 scientists 570–589 publications: 111 scientists 590–609 publications: 103 scientists 610–629 publications: 99 scientists 630–649 publications: 77 scientists 650–669 publications: 92 scientists 670–689 publications: 56 scientists 690–709 publications: 53 scientists 710–729 publications: 53 scientists 730–749 publications: 38 scientists 750–769 publications: 52 scientists 770–789 publications: 43 scientists 790–809 publications: 38 scientists 810–829 publications: 34 scientists 830–849 publications: 25 scientists 850–869 publications: 18 scientists 870–889 publications: 20 scientists 890–909 publications: 24 scientists 910–929 publications: 27 scientists 930–949 publications: 20 scientists 950–969 publications: 17 scientists 970–989 publications: 10 scientists 990–1,009 publications: 16 scientists 1,010–1,029 publications: 13 scientists 1,030–1,049 publications: 12 scientists 1,050–1,069 publications: 9 scientists 1,070–1,089 publications: 8 scientists 1,090–1,109 publications: 7 scientists 1,110–1,129 publications: 9 scientists 1,130–1,149 publications: 2 scientists 1,150–1,162 publications: 5 scientists 1,163+ publications: 100 scientists
50 publications 1,163+

This scientist: 168 publications — 20th percentile

20% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 1,163 publications or more.

Feng Miao D-index placement in Materials Science in 2026

The chart shows the D-index (discipline H-index) distribution of Materials Science scientists ranked by Research.com in 2026. The highlighted bar marks where Feng Miao sits on this spectrum.

40–41 D-Index: 211 scientists 42–43 D-Index: 450 scientists 44–45 D-Index: 612 scientists 46–47 D-Index: 612 scientists 48–49 D-Index: 598 scientists 50–51 D-Index: 657 scientists 52–53 D-Index: 667 scientists 54–55 D-Index: 621 scientists 56–57 D-Index: 597 scientists 58–59 D-Index: 610 scientists 60–61 D-Index: 587 scientists 62–63 D-Index: 606 scientists 64–65 D-Index: 533 scientists 66–67 D-Index: 490 scientists 68–69 D-Index: 469 scientists 70–71 D-Index: 378 scientists 72–73 D-Index: 421 scientists 74–75 D-Index: 359 scientists 76–77 D-Index: 323 scientists 78–79 D-Index: 299 scientists 80–81 D-Index: 230 scientists 82–83 D-Index: 210 scientists 84–85 D-Index: 195 scientists 86–87 D-Index: 203 scientists 88–89 D-Index: 175 scientists 90–91 D-Index: 175 scientists 92–93 D-Index: 142 scientists 94–95 D-Index: 121 scientists 96–97 D-Index: 117 scientists 98–99 D-Index: 107 scientists 100–101 D-Index: 88 scientists 102–103 D-Index: 85 scientists 104–105 D-Index: 68 scientists 106–107 D-Index: 62 scientists 108–109 D-Index: 57 scientists 110–111 D-Index: 45 scientists 112–113 D-Index: 49 scientists 114–115 D-Index: 50 scientists 116–117 D-Index: 34 scientists 118–119 D-Index: 38 scientists 120–121 D-Index: 37 scientists 122–123 D-Index: 29 scientists 124–125 D-Index: 28 scientists 126–127 D-Index: 24 scientists 128–129 D-Index: 33 scientists 130–131 D-Index: 28 scientists 132–133 D-Index: 21 scientists 134–135 D-Index: 20 scientists 136–137 D-Index: 23 scientists 138–139 D-Index: 17 scientists 140–141 D-Index: 12 scientists 142–143 D-Index: 17 scientists 144–145 D-Index: 21 scientists 146–147 D-Index: 13 scientists 148–149 D-Index: 11 scientists 150–151 D-Index: 14 scientists 152–153 D-Index: 13 scientists 154–155 D-Index: 9 scientists 156–157 D-Index: 10 scientists 158–159 D-Index: 7 scientists 160–161 D-Index: 4 scientists 162–163 D-Index: 4 scientists 164 D-Index: 3 scientists 165+ D-Index: 98 scientists
40 D-Index 165+

This scientist: 65 D-Index — 57th percentile

57% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 165 D-Index or more.

Overview

Feng Miao is a researcher affiliated with Nanjing University in China, contributing extensively to the fields of Engineering and Materials Science. Their research spans specialized subfields such as Materials Chemistry, Electrical and Electronic Engineering, Atomic and Molecular Physics and Optics, Biomedical Engineering, and Cellular and Molecular Neuroscience.

Their main topics of study include Advanced Memory and Neural Computing, 2D Materials and Applications, Ferroelectric and Negative Capacitance Devices, Graphene research and applications, MXene and MAX Phase Materials, Neuroscience and Neural Engineering, and Topological Materials and Phenomena.

Feng Miao has authored numerous papers published across various respected venues. Notable recent papers include:

  • Embedded Devices for Neuromorphic Time-Series Assessment (2022), Maryland Shared Open Access Repository (USMAI Consortium)
  • Recent Progress on Two-Dimensional Materials (2021), Acta Physico-Chimica Sinica
  • Gate-tunable van der Waals heterostructure for reconfigurable neural network vision sensor (2020), Science Advances
  • Broadband convolutional processing using band-alignment-tunable heterostructures (2022), Nature Electronics
  • Reconfigurable logic and neuromorphic circuits based on electrically tunable two-dimensional homojunctions (2020), Nature Electronics

The researcher frequently publishes in venues including arXiv (Cornell University), Science Advances, Nature Electronics, Advanced Materials, and ACS Nano.

Frequent co-authors collaborating with Feng Miao include Shi-Jun Liang, Bin Cheng, Pengfei Wang, Chen Pan, and Yuekun Yang.

In addition to journal articles, Feng Miao has contributed to book publications, notably with Springer Nature on the book titled "Resistive Switching: Oxide Materials, Mechanisms, Devices and Operations," published in 2021.

Best Publications

  • Superior Thermal Conductivity of Single-Layer Graphene

    Alexander A. Balandin;Suchismita Ghosh;Wenzhong Bao;Irene Calizo

  • Extremely high thermal conductivity of graphene: Prospects for thermal management applications in nanoelectronic circuits

    S. Ghosh;I. Calizo;D. Teweldebrhan;E. P. Pokatilov

  • Controlled ripple texturing of suspended graphene and ultrathin graphite membranes

    Wenzhong Bao;Feng Miao;Zhen Chen;Hang Zhang

  • Temperature dependence of the Raman spectra of graphene and graphene multilayers

    I. Calizo;A. A. Balandin;W. Bao;F. Miao

  • Strong Photoluminescence Enhancement of MoS2 through Defect Engineering and Oxygen Bonding

    Haiyan Nan;Zilu Wang;Wenhui Wang;Zheng Liang

  • Hopping transport through defect-induced localized states in molybdenum disulphide

    Hao Qiu;Tao Xu;Zilu Wang;Wei Ren

  • The mechanism of electroforming of metal oxide memristive switches

    J Joshua Yang;Feng Miao;Matthew D Pickett;Douglas A A Ohlberg

  • Phase-coherent transport in graphene quantum billiards.

    F. Miao;S. Wijeratne;Y. Zhang;U. C. Coskun

  • Robust memristors based on layered two-dimensional materials

    Miao Wang;Songhua Cai;Chen Pan;Chenyu Wang

  • High switching endurance in TaOx memristive devices

    J. Joshua Yang;M.-X. Zhang;John Paul Strachan;Feng Miao

  • Integrated digital inverters based on two-dimensional anisotropic ReS2 field-effect transistors.

    Erfu Liu;Yajun Fu;Yaojia Wang;Yanqing Feng

  • Room temperature high-detectivity mid-infrared photodetectors based on black arsenic phosphorus

    Mingsheng Long;Anyuan Gao;Peng Wang;Hui Xia

  • Anatomy of a nanoscale conduction channel reveals the mechanism of a high-performance memristor.

    Feng Miao;John Paul Strachan;J. Joshua Yang;Min-Xian Zhang

  • Van der Waals Heterostructures for High‐Performance Device Applications: Challenges and Opportunities

    Shi-Jun Liang;Bin Cheng;Xinyi Cui;Feng Miao

  • Van der Waals epitaxial growth and optoelectronics of large-scale WSe 2 /SnS 2 vertical bilayer p–n junctions

    Tiefeng Yang;Biyuan Zheng;Zhen Wang;Tao Xu

  • Broadband Photovoltaic Detectors Based on an Atomically Thin Heterostructure.

    Mingsheng Long;Erfu Liu;Peng Wang;Anyuan Gao

  • Gate-tunable van der Waals heterostructure for reconfigurable neural network vision sensor

    Chen-Yu Wang;Shi-Jun Liang;Shuang Wang;Pengfei Wang

  • Two-dimensional quasi-freestanding molecular crystals for high-performance organic field-effect transistors

    Daowei He;Yuhan Zhang;Qisheng Wu;Rui Xu

  • Reconfigurable logic and neuromorphic circuits based on electrically tunable two-dimensional homojunctions

    Chen Pan;Chen-Yu Wang;Shi-Jun Liang;Yu Wang

  • The effect of substrates on the Raman spectrum of graphene: Graphene- on-sapphire and graphene-on-glass

    Irene Calizo;Wenzhong Bao;Feng Miao;Chun Ning Lau

  • PROOF COPY 020815APL Extremely high thermal conductivity of graphene: Prospects for thermal management applications in nanoelectronic circuits

    S. Ghosh;I. Calizo;D. Teweldebrhan;E. P. Pokatilov

  • Broadband Photovoltaic Detectors based on an Atomically Thin Heterostructure

    Mingsheng Long;Erfu Liu;Peng Wang;Anyuan Gao

Frequent Co-Authors

Chun Ning Lau
Chun Ning Lau The Ohio State University
J. Joshua Yang
J. Joshua Yang University of Southern California
R. Stanley Williams
R. Stanley Williams Texas A&M University
Wenzhong Bao
Wenzhong Bao Fudan University
John Paul Strachan
John Paul Strachan Hewlett-Packard (United States)
Gilberto Medeiros-Ribeiro
Gilberto Medeiros-Ribeiro Universidade Federal de Minas Gerais
Yi Shi
Yi Shi Nanjing University
Xinran Wang
Xinran Wang Nanjing University
Matthew D. Pickett
Matthew D. Pickett Hewlett-Packard (United States)
Weida Hu
Weida Hu Chinese Academy of Sciences

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