World's Best Scientists 2026 revealed!

D-Index & Metrics

Discipline name D-Index World Ranking Current World Ranking National Ranking Current National Ranking Publications Citations
Materials Science 65 5491 5309 1676 1669 168 41717

Feng Miao publications per year

The chart shows the history of publications by Feng Miao between 2006 and 2025, highlighting the no. of papers published in each year and offering an overview of the publication velocity of this scholar. Feng Miao published across 20 years, from 2006 to 2025, averaging 12.5 papers a year. Output peaked at 25 publications in 2025. 45 of the 250 publications appeared in the last two years.

No. of publications
5 10 15 20 25
Bar chart. Horizontal axis: year, 2006 to 2025. Vertical axis: number of publications, 0 to 25. Peak 25 publications in 2025. 2006: 2 publications 2007: 8 publications 2008: 12 publications 2009: 12 publications 2010: 7 publications 2011: 9 publications 2012: 9 publications 2013: 3 publications 2014: 9 publications 2015: 5 publications 2016: 17 publications 2017: 17 publications 2018: 19 publications 2019: 20 publications 2020: 16 publications 2021: 11 publications 2022: 19 publications 2023: 10 publications 2024: 20 publications 2025: 25 publications
2006 2025

250 publications in total across all disciplines

View publications per year as a table
Feng Miao: publications per year, 2006 to 2025
Year Publications
2006 2
2007 8
2008 12
2009 12
2010 7
2011 9
2012 9
2013 3
2014 9
2015 5
2016 17
2017 17
2018 19
2019 20
2020 16
2021 11
2022 19
2023 10
2024 20
2025 25
Total 250
Download as CSV

Feng Miao publication distribution in Materials Science in 2026

The chart shows the distribution of publications by all Research.com ranked scientists in the field of Materials Science in 2026. The highlighted bar marks where Feng Miao sits on this spectrum.

No. of scientists
200 400 600 800
Bar chart with 57 bars. Horizontal axis: publications, 50–69 to 1,163+. Vertical axis: number of scientists, 0 to 891. Most scientists, 891, have 190–209 publications. The last bar groups every scientist with 1,163 publications or more. The highlighted bar, 150–169 publications, is where this scientist sits. 50–69 publications: 28 scientists 70–89 publications: 152 scientists 90–109 publications: 356 scientists 110–129 publications: 487 scientists 130–149 publications: 723 scientists 150–169 publications: 835 scientists 170–189 publications: 850 scientists 190–209 publications: 891 scientists 210–229 publications: 862 scientists 230–249 publications: 766 scientists 250–269 publications: 726 scientists 270–289 publications: 665 scientists 290–309 publications: 593 scientists 310–329 publications: 537 scientists 330–349 publications: 477 scientists 350–369 publications: 440 scientists 370–389 publications: 356 scientists 390–409 publications: 321 scientists 410–429 publications: 256 scientists 430–449 publications: 246 scientists 450–469 publications: 216 scientists 470–489 publications: 212 scientists 490–509 publications: 174 scientists 510–529 publications: 194 scientists 530–549 publications: 162 scientists 550–569 publications: 131 scientists 570–589 publications: 111 scientists 590–609 publications: 103 scientists 610–629 publications: 99 scientists 630–649 publications: 77 scientists 650–669 publications: 92 scientists 670–689 publications: 56 scientists 690–709 publications: 53 scientists 710–729 publications: 53 scientists 730–749 publications: 38 scientists 750–769 publications: 52 scientists 770–789 publications: 43 scientists 790–809 publications: 38 scientists 810–829 publications: 34 scientists 830–849 publications: 25 scientists 850–869 publications: 18 scientists 870–889 publications: 20 scientists 890–909 publications: 24 scientists 910–929 publications: 27 scientists 930–949 publications: 20 scientists 950–969 publications: 17 scientists 970–989 publications: 10 scientists 990–1,009 publications: 16 scientists 1,010–1,029 publications: 13 scientists 1,030–1,049 publications: 12 scientists 1,050–1,069 publications: 9 scientists 1,070–1,089 publications: 8 scientists 1,090–1,109 publications: 7 scientists 1,110–1,129 publications: 9 scientists 1,130–1,149 publications: 2 scientists 1,150–1,162 publications: 5 scientists 1,163+ publications: 100 scientists
50–69 publications 1,163+

This scientist: 168 publications — 20th percentile

20% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 1,163 publications or more.

View publications distribution as a table
Number of Materials Science scientists by publication count, Research.com 2026 ranking edition. Based on 12,847 ranked scientists.
Publications Scientists This scientist
50–69 28
70–89 152
90–109 356
110–129 487
130–149 723
150–169 835 168
170–189 850
190–209 891
210–229 862
230–249 766
250–269 726
270–289 665
290–309 593
310–329 537
330–349 477
350–369 440
370–389 356
390–409 321
410–429 256
430–449 246
450–469 216
470–489 212
490–509 174
510–529 194
530–549 162
550–569 131
570–589 111
590–609 103
610–629 99
630–649 77
650–669 92
670–689 56
690–709 53
710–729 53
730–749 38
750–769 52
770–789 43
790–809 38
810–829 34
830–849 25
850–869 18
870–889 20
890–909 24
910–929 27
930–949 20
950–969 17
970–989 10
990–1,009 16
1,010–1,029 13
1,030–1,049 12
1,050–1,069 9
1,070–1,089 8
1,090–1,109 7
1,110–1,129 9
1,130–1,149 2
1,150–1,162 5
1,163+ 100
Download as CSV

Feng Miao D-index placement in Materials Science in 2026

The chart shows the D-index (discipline H-index) distribution of Materials Science scientists ranked by Research.com in 2026. The highlighted bar marks where Feng Miao sits on this spectrum.

No. of scientists
200 400 600
Bar chart with 64 bars. Horizontal axis: D-Index, 40–41 to 165+. Vertical axis: number of scientists, 0 to 667. Most scientists, 667, have 52–53 D-Index. The last bar groups every scientist with 165 D-Index or more. The highlighted bar, 64–65 D-Index, is where this scientist sits. 40–41 D-Index: 211 scientists 42–43 D-Index: 450 scientists 44–45 D-Index: 612 scientists 46–47 D-Index: 612 scientists 48–49 D-Index: 598 scientists 50–51 D-Index: 657 scientists 52–53 D-Index: 667 scientists 54–55 D-Index: 621 scientists 56–57 D-Index: 597 scientists 58–59 D-Index: 610 scientists 60–61 D-Index: 587 scientists 62–63 D-Index: 606 scientists 64–65 D-Index: 533 scientists 66–67 D-Index: 490 scientists 68–69 D-Index: 469 scientists 70–71 D-Index: 378 scientists 72–73 D-Index: 421 scientists 74–75 D-Index: 359 scientists 76–77 D-Index: 323 scientists 78–79 D-Index: 299 scientists 80–81 D-Index: 230 scientists 82–83 D-Index: 210 scientists 84–85 D-Index: 195 scientists 86–87 D-Index: 203 scientists 88–89 D-Index: 175 scientists 90–91 D-Index: 175 scientists 92–93 D-Index: 142 scientists 94–95 D-Index: 121 scientists 96–97 D-Index: 117 scientists 98–99 D-Index: 107 scientists 100–101 D-Index: 88 scientists 102–103 D-Index: 85 scientists 104–105 D-Index: 68 scientists 106–107 D-Index: 62 scientists 108–109 D-Index: 57 scientists 110–111 D-Index: 45 scientists 112–113 D-Index: 49 scientists 114–115 D-Index: 50 scientists 116–117 D-Index: 34 scientists 118–119 D-Index: 38 scientists 120–121 D-Index: 37 scientists 122–123 D-Index: 29 scientists 124–125 D-Index: 28 scientists 126–127 D-Index: 24 scientists 128–129 D-Index: 33 scientists 130–131 D-Index: 28 scientists 132–133 D-Index: 21 scientists 134–135 D-Index: 20 scientists 136–137 D-Index: 23 scientists 138–139 D-Index: 17 scientists 140–141 D-Index: 12 scientists 142–143 D-Index: 17 scientists 144–145 D-Index: 21 scientists 146–147 D-Index: 13 scientists 148–149 D-Index: 11 scientists 150–151 D-Index: 14 scientists 152–153 D-Index: 13 scientists 154–155 D-Index: 9 scientists 156–157 D-Index: 10 scientists 158–159 D-Index: 7 scientists 160–161 D-Index: 4 scientists 162–163 D-Index: 4 scientists 164 D-Index: 3 scientists 165+ D-Index: 98 scientists
40–41 D-Index 165+

This scientist: 65 D-Index — 57th percentile

57% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 165 D-Index or more.

View D-Index distribution as a table
Number of Materials Science scientists by D-index, Research.com 2026 ranking edition. Based on 12,847 ranked scientists.
D-Index Scientists This scientist
40–41 211
42–43 450
44–45 612
46–47 612
48–49 598
50–51 657
52–53 667
54–55 621
56–57 597
58–59 610
60–61 587
62–63 606
64–65 533 65
66–67 490
68–69 469
70–71 378
72–73 421
74–75 359
76–77 323
78–79 299
80–81 230
82–83 210
84–85 195
86–87 203
88–89 175
90–91 175
92–93 142
94–95 121
96–97 117
98–99 107
100–101 88
102–103 85
104–105 68
106–107 62
108–109 57
110–111 45
112–113 49
114–115 50
116–117 34
118–119 38
120–121 37
122–123 29
124–125 28
126–127 24
128–129 33
130–131 28
132–133 21
134–135 20
136–137 23
138–139 17
140–141 12
142–143 17
144–145 21
146–147 13
148–149 11
150–151 14
152–153 13
154–155 9
156–157 10
158–159 7
160–161 4
162–163 4
164 3
165+ 98
Download as CSV

Overview

Feng Miao is a researcher affiliated with Nanjing University in China, contributing extensively to the fields of Engineering and Materials Science. Their research spans specialized subfields such as Materials Chemistry, Electrical and Electronic Engineering, Atomic and Molecular Physics and Optics, Biomedical Engineering, and Cellular and Molecular Neuroscience.

Their main topics of study include Advanced Memory and Neural Computing, 2D Materials and Applications, Ferroelectric and Negative Capacitance Devices, Graphene research and applications, MXene and MAX Phase Materials, Neuroscience and Neural Engineering, and Topological Materials and Phenomena.

Feng Miao has authored numerous papers published across various respected venues. Notable recent papers include:

  • Embedded Devices for Neuromorphic Time-Series Assessment (2022), Maryland Shared Open Access Repository (USMAI Consortium)
  • Recent Progress on Two-Dimensional Materials (2021), Acta Physico-Chimica Sinica
  • Gate-tunable van der Waals heterostructure for reconfigurable neural network vision sensor (2020), Science Advances
  • Broadband convolutional processing using band-alignment-tunable heterostructures (2022), Nature Electronics
  • Reconfigurable logic and neuromorphic circuits based on electrically tunable two-dimensional homojunctions (2020), Nature Electronics

The researcher frequently publishes in venues including arXiv (Cornell University), Science Advances, Nature Electronics, Advanced Materials, and ACS Nano.

Frequent co-authors collaborating with Feng Miao include Shi-Jun Liang, Bin Cheng, Pengfei Wang, Chen Pan, and Yuekun Yang.

In addition to journal articles, Feng Miao has contributed to book publications, notably with Springer Nature on the book titled "Resistive Switching: Oxide Materials, Mechanisms, Devices and Operations," published in 2021.

Best Publications

  • Superior Thermal Conductivity of Single-Layer Graphene

    Alexander A. Balandin;Suchismita Ghosh;Wenzhong Bao;Irene Calizo

  • Extremely high thermal conductivity of graphene: Prospects for thermal management applications in nanoelectronic circuits

    S. Ghosh;I. Calizo;D. Teweldebrhan;E. P. Pokatilov

  • Controlled ripple texturing of suspended graphene and ultrathin graphite membranes

    Wenzhong Bao;Feng Miao;Zhen Chen;Hang Zhang

  • Temperature dependence of the Raman spectra of graphene and graphene multilayers

    I. Calizo;A. A. Balandin;W. Bao;F. Miao

  • Strong Photoluminescence Enhancement of MoS2 through Defect Engineering and Oxygen Bonding

    Haiyan Nan;Zilu Wang;Wenhui Wang;Zheng Liang

  • Hopping transport through defect-induced localized states in molybdenum disulphide

    Hao Qiu;Tao Xu;Zilu Wang;Wei Ren

  • The mechanism of electroforming of metal oxide memristive switches

    J Joshua Yang;Feng Miao;Matthew D Pickett;Douglas A A Ohlberg

  • Phase-coherent transport in graphene quantum billiards.

    F. Miao;S. Wijeratne;Y. Zhang;U. C. Coskun

  • Robust memristors based on layered two-dimensional materials

    Miao Wang;Songhua Cai;Chen Pan;Chenyu Wang

  • High switching endurance in TaOx memristive devices

    J. Joshua Yang;M.-X. Zhang;John Paul Strachan;Feng Miao

  • Integrated digital inverters based on two-dimensional anisotropic ReS2 field-effect transistors.

    Erfu Liu;Yajun Fu;Yaojia Wang;Yanqing Feng

  • Room temperature high-detectivity mid-infrared photodetectors based on black arsenic phosphorus

    Mingsheng Long;Anyuan Gao;Peng Wang;Hui Xia

  • Anatomy of a nanoscale conduction channel reveals the mechanism of a high-performance memristor.

    Feng Miao;John Paul Strachan;J. Joshua Yang;Min-Xian Zhang

  • Van der Waals Heterostructures for High‐Performance Device Applications: Challenges and Opportunities

    Shi-Jun Liang;Bin Cheng;Xinyi Cui;Feng Miao

  • Van der Waals epitaxial growth and optoelectronics of large-scale WSe 2 /SnS 2 vertical bilayer p–n junctions

    Tiefeng Yang;Biyuan Zheng;Zhen Wang;Tao Xu

  • Broadband Photovoltaic Detectors Based on an Atomically Thin Heterostructure.

    Mingsheng Long;Erfu Liu;Peng Wang;Anyuan Gao

  • Gate-tunable van der Waals heterostructure for reconfigurable neural network vision sensor

    Chen-Yu Wang;Shi-Jun Liang;Shuang Wang;Pengfei Wang

  • Two-dimensional quasi-freestanding molecular crystals for high-performance organic field-effect transistors

    Daowei He;Yuhan Zhang;Qisheng Wu;Rui Xu

  • Reconfigurable logic and neuromorphic circuits based on electrically tunable two-dimensional homojunctions

    Chen Pan;Chen-Yu Wang;Shi-Jun Liang;Yu Wang

  • The effect of substrates on the Raman spectrum of graphene: Graphene- on-sapphire and graphene-on-glass

    Irene Calizo;Wenzhong Bao;Feng Miao;Chun Ning Lau

  • PROOF COPY 020815APL Extremely high thermal conductivity of graphene: Prospects for thermal management applications in nanoelectronic circuits

    S. Ghosh;I. Calizo;D. Teweldebrhan;E. P. Pokatilov

  • Broadband Photovoltaic Detectors based on an Atomically Thin Heterostructure

    Mingsheng Long;Erfu Liu;Peng Wang;Anyuan Gao

Frequent Co-Authors

Chun Ning Lau
Chun Ning Lau The Ohio State University
J. Joshua Yang
J. Joshua Yang University of Southern California
R. Stanley Williams
R. Stanley Williams Texas A&M University
Wenzhong Bao
Wenzhong Bao Fudan University
John Paul Strachan
John Paul Strachan Hewlett-Packard (United States)
Gilberto Medeiros-Ribeiro
Gilberto Medeiros-Ribeiro Universidade Federal de Minas Gerais
Yi Shi
Yi Shi Nanjing University
Xinran Wang
Xinran Wang Nanjing University
Matthew D. Pickett
Matthew D. Pickett Hewlett-Packard (United States)
Weida Hu
Weida Hu Chinese Academy of Sciences

If you think any of the details on this page are incorrect, let us know.

Report an issue

We appreciate your kind effort to assist us to improve this page, it would be helpful providing us with as much detail as possible in the text box below:

Best Scientists Citing Feng Miao

Trending Scientists

Recently Published Articles