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Gilberto Medeiros-Ribeiro

Gilberto Medeiros-Ribeiro

D-Index & Metrics

Materials Science

D-Index
66
Citations
17292
World Ranking
5292
National Ranking
17

Gilberto Medeiros-Ribeiro publication distribution in Materials Science in 2026

The chart shows the distribution of publications by all Research.com ranked scientists in the field of Materials Science in 2026. The highlighted bar marks where Gilberto Medeiros-Ribeiro sits on this spectrum.

50–69 publications: 28 scientists 70–89 publications: 152 scientists 90–109 publications: 356 scientists 110–129 publications: 487 scientists 130–149 publications: 723 scientists 150–169 publications: 835 scientists 170–189 publications: 850 scientists 190–209 publications: 891 scientists 210–229 publications: 862 scientists 230–249 publications: 766 scientists 250–269 publications: 726 scientists 270–289 publications: 665 scientists 290–309 publications: 593 scientists 310–329 publications: 537 scientists 330–349 publications: 477 scientists 350–369 publications: 440 scientists 370–389 publications: 356 scientists 390–409 publications: 321 scientists 410–429 publications: 256 scientists 430–449 publications: 246 scientists 450–469 publications: 216 scientists 470–489 publications: 212 scientists 490–509 publications: 174 scientists 510–529 publications: 194 scientists 530–549 publications: 162 scientists 550–569 publications: 131 scientists 570–589 publications: 111 scientists 590–609 publications: 103 scientists 610–629 publications: 99 scientists 630–649 publications: 77 scientists 650–669 publications: 92 scientists 670–689 publications: 56 scientists 690–709 publications: 53 scientists 710–729 publications: 53 scientists 730–749 publications: 38 scientists 750–769 publications: 52 scientists 770–789 publications: 43 scientists 790–809 publications: 38 scientists 810–829 publications: 34 scientists 830–849 publications: 25 scientists 850–869 publications: 18 scientists 870–889 publications: 20 scientists 890–909 publications: 24 scientists 910–929 publications: 27 scientists 930–949 publications: 20 scientists 950–969 publications: 17 scientists 970–989 publications: 10 scientists 990–1,009 publications: 16 scientists 1,010–1,029 publications: 13 scientists 1,030–1,049 publications: 12 scientists 1,050–1,069 publications: 9 scientists 1,070–1,089 publications: 8 scientists 1,090–1,109 publications: 7 scientists 1,110–1,129 publications: 9 scientists 1,130–1,149 publications: 2 scientists 1,150–1,162 publications: 5 scientists 1,163+ publications: 100 scientists
50 publications 1,163+

This scientist: 201 publications — 31st percentile

31% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 1,163 publications or more.

Gilberto Medeiros-Ribeiro D-index placement in Materials Science in 2026

The chart shows the D-index (discipline H-index) distribution of Materials Science scientists ranked by Research.com in 2026. The highlighted bar marks where Gilberto Medeiros-Ribeiro sits on this spectrum.

40–41 D-Index: 211 scientists 42–43 D-Index: 450 scientists 44–45 D-Index: 612 scientists 46–47 D-Index: 612 scientists 48–49 D-Index: 598 scientists 50–51 D-Index: 657 scientists 52–53 D-Index: 667 scientists 54–55 D-Index: 621 scientists 56–57 D-Index: 597 scientists 58–59 D-Index: 610 scientists 60–61 D-Index: 587 scientists 62–63 D-Index: 606 scientists 64–65 D-Index: 533 scientists 66–67 D-Index: 490 scientists 68–69 D-Index: 469 scientists 70–71 D-Index: 378 scientists 72–73 D-Index: 421 scientists 74–75 D-Index: 359 scientists 76–77 D-Index: 323 scientists 78–79 D-Index: 299 scientists 80–81 D-Index: 230 scientists 82–83 D-Index: 210 scientists 84–85 D-Index: 195 scientists 86–87 D-Index: 203 scientists 88–89 D-Index: 175 scientists 90–91 D-Index: 175 scientists 92–93 D-Index: 142 scientists 94–95 D-Index: 121 scientists 96–97 D-Index: 117 scientists 98–99 D-Index: 107 scientists 100–101 D-Index: 88 scientists 102–103 D-Index: 85 scientists 104–105 D-Index: 68 scientists 106–107 D-Index: 62 scientists 108–109 D-Index: 57 scientists 110–111 D-Index: 45 scientists 112–113 D-Index: 49 scientists 114–115 D-Index: 50 scientists 116–117 D-Index: 34 scientists 118–119 D-Index: 38 scientists 120–121 D-Index: 37 scientists 122–123 D-Index: 29 scientists 124–125 D-Index: 28 scientists 126–127 D-Index: 24 scientists 128–129 D-Index: 33 scientists 130–131 D-Index: 28 scientists 132–133 D-Index: 21 scientists 134–135 D-Index: 20 scientists 136–137 D-Index: 23 scientists 138–139 D-Index: 17 scientists 140–141 D-Index: 12 scientists 142–143 D-Index: 17 scientists 144–145 D-Index: 21 scientists 146–147 D-Index: 13 scientists 148–149 D-Index: 11 scientists 150–151 D-Index: 14 scientists 152–153 D-Index: 13 scientists 154–155 D-Index: 9 scientists 156–157 D-Index: 10 scientists 158–159 D-Index: 7 scientists 160–161 D-Index: 4 scientists 162–163 D-Index: 4 scientists 164 D-Index: 3 scientists 165+ D-Index: 98 scientists
40 D-Index 165+

This scientist: 66 D-Index — 59th percentile

59% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 165 D-Index or more.

Overview

Gilberto Medeiros-Ribeiro is affiliated with the Universidade Federal de Minas Gerais in Brazil. Their research primarily focuses on the intersection of engineering and materials science, with a significant emphasis on materials chemistry and biomedical engineering.

The scientist has contributed extensively to topics including:

  • Graphene research and applications
  • Near-Field Optical Microscopy
  • Microwave and Dielectric Measurement Techniques
  • Diamond and Carbon-based Materials Research
  • 2D Materials and Applications
  • Plasmonic and Surface Plasmon Research
  • Reinforcement Learning in Robotics

Among their frequent co-authors are Douglas A. A. Ohlberg, Kenji Watanabe, Leonardo C. Campos, Andreij C. Gadelha, and Takashi Taniguchi, highlighting collaborative work within both experimental and theoretical frameworks.

The scientist has published several papers recently, including:

  • "Localization of lattice dynamics in low-angle twisted bilayer graphene" (2021), published in Nature
  • "Twisted Bilayer Graphene: A Versatile Fabrication Method and the Detection of Variable Nanometric Strain Caused by Twist-Angle Disorder" (2021), published in ACS Applied Nano Materials
  • "The limits of near field immersion microwave microscopy evaluated by imaging bilayer graphene moiré patterns" (2021), published in Nature Communications
  • "Raman spectra of twisted bilayer graphene close to the magic angle" (2022), published in 2D Materials
  • "A comprehensive review of non-invasive optical and microwave biosensors for glucose monitoring" (2024), published in Biosensors and Bioelectronics

Their publication record also reflects frequent appearances in venues such as arXiv (Cornell University), physica status solidi (b), and Zenodo (CERN European Organization for Nuclear Research), indicating a range of dissemination platforms from preprints to peer-reviewed journals.

Gilberto Medeiros-Ribeiro's subfields of study span materials chemistry, biomedical engineering, electrical and electronic engineering, atomic and molecular physics and optics, as well as artificial intelligence. This multidisciplinary approach aligns with their investigation into the properties and applications of layered and two-dimensional materials.

Best Publications

  • A scalable neuristor built with Mott memristors

    Matthew D. Pickett;Gilberto Medeiros-Ribeiro;R. Stanley Williams

  • Shape Transition of Germanium Nanocrystals on a Silicon (001) Surface from Pyramids to Domes

    Gilberto Medeiros-Ribeiro;Alexander M. Bratkovski;Theodore I. Kamins;Douglas A. A. Ohlberg

  • Sub-nanosecond switching of a tantalum oxide memristor

    Antonio C Torrezan;John Paul Strachan;Gilberto Medeiros-Ribeiro;R Stanley Williams

  • Intermixing and shape changes during the formation of InAs self-assembled quantum dots

    J. M. Garcı́a;G. Medeiros-Ribeiro;K. Schmidt;T. Ngo

  • Memristor―CMOS Hybrid Integrated Circuits for Reconfigurable Logic

    Qiangfei Xia;Warren Robinett;Michael W. Cumbie;Neel Banerjee

  • High switching endurance in TaOx memristive devices

    J. Joshua Yang;M.-X. Zhang;John Paul Strachan;Feng Miao

  • Anatomy of a nanoscale conduction channel reveals the mechanism of a high-performance memristor.

    Feng Miao;John Paul Strachan;J. Joshua Yang;Min-Xian Zhang

  • Charged Excitons in Self-Assembled Semiconductor Quantum Dots

    Richard Warburton;C S Durr;K Karrai;J P Kotthaus;J P Kotthaus

  • Coulomb interactions in small charge-tunable quantum dots: A simple model

    R. J. Warburton;B. T. Miller;C. S. Dürr;C. Bödefeld

  • Direct identification of the conducting channels in a functioning memristive device.

    John Paul Strachan;Matthew D. Pickett;J. Joshua Yang;Shaul Aloni

  • Carrier relaxation and electronic structure in InAs self-assembled quantum dots

    K. H. Schmidt;G. Medeiros-Ribeiro;M. Oestreich;P. M. Petroff

  • Shell structure and electron-electron interaction in self-assembled InAs quantum dots

    M. Fricke;A. Lorke;J. P. Kotthaus;G.Medeiros-Ribeiro

  • Few-electron ground states of charge-tunable self-assembled quantum dots

    Barbara Therese Miller;W Hansen;S Manus;R Luyken

  • Self-assembled growth of epitaxial erbium disilicide nanowires on silicon (001)

    Yong Chen;Douglas A. A. Ohlberg;Gilberto Medeiros-Ribeiro;Y. Austin Chang

  • Evolution of Ge islands on Si(001) during annealing

    T. I. Kamins;G. Medeiros-Ribeiro;D. A. A. Ohlberg;R. Stanley Williams

  • Electron and hole energy levels in InAs self‐assembled quantum dots

    G. Medeiros‐Ribeiro;D. Leonard;P. M. Petroff

  • Anisotropy of the Raman spectra of nanographite ribbons.

    L. G. Cançado;M. A. Pimenta;B. R. A. Neves;G. Medeiros-Ribeiro

  • Inverse Bloch oscillator: Strong terahertz-photocurrent resonances at the Bloch frequency.

    K. Unterrainer;B. J. Keay;M. C. Wanke;S. J. Allen

  • Engineering nonlinearity into memristors for passive crossbar applications

    J. Joshua Yang;M.-X. Zhang;Matthew D. Pickett;Feng Miao

  • State Dynamics and Modeling of Tantalum Oxide Memristors

    J. P. Strachan;A. C. Torrezan;Feng Miao;M. D. Pickett

  • 3D composition of epitaxial nanocrystals by anomalous X-ray diffraction: observation of a Si-rich core in Ge domes on Si(100).

    A Malachias;S Kycia;G Medeiros-Ribeiro;R Magalhães-Paniago

Frequent Co-Authors

R. Stanley Williams
R. Stanley Williams Texas A&M University
Pierre Petroff
Pierre Petroff University of California, Santa Barbara
J. Joshua Yang
J. Joshua Yang University of Southern California
Theodore I. Kamins
Theodore I. Kamins Stanford University
John Paul Strachan
John Paul Strachan Hewlett-Packard (United States)
Matthew D. Pickett
Matthew D. Pickett Hewlett-Packard (United States)
Feng Miao
Feng Miao Nanjing University
Jörg P. Kotthaus
Jörg P. Kotthaus Ludwig-Maximilians-Universität München
Klaus Ensslin
Klaus Ensslin ETH Zurich
Ado Jorio
Ado Jorio Universidade Federal de Minas Gerais

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