World's Best Scientists 2026 revealed!

D-Index & Metrics

Electronics and Electrical Engineering

D-Index
57
Citations
33696
World Ranking
1918
National Ranking
752

Dmitri B. Strukov publication distribution in Electronics and Electrical Engineering in 2026

The chart shows the distribution of publications by all Research.com ranked scientists in the field of Electronics and Electrical Engineering in 2026. The highlighted bar marks where Dmitri B. Strukov sits on this spectrum.

34–53 publications: 24 scientists 54–73 publications: 52 scientists 74–93 publications: 114 scientists 94–113 publications: 203 scientists 114–133 publications: 269 scientists 134–153 publications: 355 scientists 154–173 publications: 403 scientists 174–193 publications: 445 scientists 194–213 publications: 430 scientists 214–233 publications: 431 scientists 234–253 publications: 399 scientists 254–273 publications: 366 scientists 274–293 publications: 335 scientists 294–313 publications: 300 scientists 314–333 publications: 276 scientists 334–353 publications: 250 scientists 354–373 publications: 214 scientists 374–393 publications: 187 scientists 394–413 publications: 152 scientists 414–433 publications: 169 scientists 434–453 publications: 147 scientists 454–473 publications: 111 scientists 474–493 publications: 117 scientists 494–513 publications: 103 scientists 514–533 publications: 99 scientists 534–553 publications: 92 scientists 554–573 publications: 75 scientists 574–593 publications: 58 scientists 594–613 publications: 69 scientists 614–633 publications: 50 scientists 634–653 publications: 62 scientists 654–673 publications: 54 scientists 674–693 publications: 44 scientists 694–713 publications: 37 scientists 714–733 publications: 28 scientists 734–753 publications: 26 scientists 754–773 publications: 26 scientists 774–793 publications: 19 scientists 794–813 publications: 23 scientists 814–833 publications: 20 scientists 834–853 publications: 16 scientists 854–873 publications: 20 scientists 874–893 publications: 11 scientists 894–913 publications: 11 scientists 914–933 publications: 16 scientists 934–953 publications: 13 scientists 954–973 publications: 10 scientists 974–993 publications: 11 scientists 994–1,013 publications: 9 scientists 1,014–1,033 publications: 9 scientists 1,034–1,053 publications: 10 scientists 1,054–1,064 publications: 6 scientists 1,065+ publications: 99 scientists
34 publications 1,065+

This scientist: 192 publications — 27th percentile

27% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 1,065 publications or more.

Dmitri B. Strukov D-index placement in Electronics and Electrical Engineering in 2026

The chart shows the D-index (discipline H-index) distribution of Electronics and Electrical Engineering scientists ranked by Research.com in 2026. The highlighted bar marks where Dmitri B. Strukov sits on this spectrum.

30 D-Index: 178 scientists 31 D-Index: 257 scientists 32 D-Index: 263 scientists 33 D-Index: 262 scientists 34 D-Index: 244 scientists 35 D-Index: 236 scientists 36 D-Index: 211 scientists 37 D-Index: 220 scientists 38 D-Index: 214 scientists 39 D-Index: 214 scientists 40 D-Index: 205 scientists 41 D-Index: 187 scientists 42 D-Index: 194 scientists 43 D-Index: 201 scientists 44 D-Index: 155 scientists 45 D-Index: 189 scientists 46 D-Index: 148 scientists 47 D-Index: 160 scientists 48 D-Index: 134 scientists 49 D-Index: 130 scientists 50 D-Index: 141 scientists 51 D-Index: 156 scientists 52 D-Index: 108 scientists 53 D-Index: 130 scientists 54 D-Index: 112 scientists 55 D-Index: 97 scientists 56 D-Index: 111 scientists 57 D-Index: 102 scientists 58 D-Index: 108 scientists 59 D-Index: 120 scientists 60 D-Index: 103 scientists 61 D-Index: 93 scientists 62 D-Index: 92 scientists 63 D-Index: 74 scientists 64 D-Index: 77 scientists 65 D-Index: 73 scientists 66 D-Index: 64 scientists 67 D-Index: 69 scientists 68 D-Index: 60 scientists 69 D-Index: 39 scientists 70 D-Index: 57 scientists 71 D-Index: 59 scientists 72 D-Index: 46 scientists 73 D-Index: 49 scientists 74 D-Index: 38 scientists 75 D-Index: 35 scientists 76 D-Index: 32 scientists 77 D-Index: 35 scientists 78 D-Index: 31 scientists 79 D-Index: 22 scientists 80 D-Index: 34 scientists 81 D-Index: 31 scientists 82 D-Index: 34 scientists 83 D-Index: 23 scientists 84 D-Index: 18 scientists 85 D-Index: 30 scientists 86 D-Index: 19 scientists 87 D-Index: 19 scientists 88 D-Index: 20 scientists 89 D-Index: 8 scientists 90 D-Index: 17 scientists 91 D-Index: 7 scientists 92 D-Index: 14 scientists 93 D-Index: 9 scientists 94 D-Index: 15 scientists 95 D-Index: 10 scientists 96 D-Index: 12 scientists 97 D-Index: 10 scientists 98 D-Index: 10 scientists 99 D-Index: 12 scientists 100 D-Index: 16 scientists 101 D-Index: 5 scientists 102 D-Index: 7 scientists 103 D-Index: 7 scientists 104 D-Index: 8 scientists 105 D-Index: 9 scientists 106 D-Index: 13 scientists 107 D-Index: 4 scientists 108 D-Index: 5 scientists 109 D-Index: 10 scientists 110 D-Index: 8 scientists 111+ D-Index: 96 scientists
30 D-Index 111+

This scientist: 57 D-Index — 72nd percentile

72% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 111 D-Index or more.

Research.com Recognitions

  • 2013 - Hellman Fellow

Overview

Dmitri B. Strukov is affiliated with the University of California, Santa Barbara in the United States. Their research spans multiple fields, centered largely on engineering and computer science with specific focus areas in electrical and electronic engineering, artificial intelligence, and cellular and molecular neuroscience.

The main topics covered by Dmitri B. Strukov's research include:

  • Advanced Memory and Neural Computing
  • Ferroelectric and Negative Capacitance Devices
  • Neuroscience and Neural Engineering
  • CCD and CMOS Imaging Sensors
  • Neural Networks and Applications
  • Quantum Computing Algorithms and Architecture
  • Neural Networks and Reservoir Computing

Frequent publication venues for their work are:

  • arXiv (Cornell University)
  • Nature Communications
  • Frontiers in Big Data
  • IEEE Transactions on Electron Devices
  • IEEE Transactions on Nanotechnology

Selected recent publications showcase the diversity of their research:

  • "Wafer-scale integration of two-dimensional materials in high-density memristive crossbar arrays for artificial neural networks", 2020, Nature Electronics
  • "Recent Advances and Future Prospects for Memristive Materials, Devices, and Systems", 2023, ACS Nano
  • "4K-memristor analog-grade passive crossbar circuit", 2021, Nature Communications
  • "Roadmap on emerging hardware and technology for machine learning", 2020, Nanotechnology
  • "Applications and Techniques for Fast Machine Learning in Science", 2022, Frontiers in Big Data

Dmitri B. Strukov has collaborated frequently with several co-authors, including:

  • Mohammad Reza Mahmoodi
  • John Paul Strachan
  • Hussein Nili
  • Tinish Bhattacharya
  • Giacomo Pedretti

In recognition of their contributions, they received the Hellman Fellow award in 2013.

Best Publications

  • The missing memristor found

    Dmitri B. Strukov;Gregory S. Snider;Duncan R. Stewart;R. Stanley Williams

  • Memristive devices for computing

    J. Joshua Yang;Dmitri B. Strukov;Duncan R. Stewart

  • Training and operation of an integrated neuromorphic network based on metal-oxide memristors

    Mirko Prezioso;Farnood Merrikh-Bayat;Brian Hoskins;Gina C. Adam

  • Switching dynamics in titanium dioxide memristive devices

    Matthew D. Pickett;Dmitri B. Strukov;Julien L. Borghetti;J. Joshua Yang

  • Memristor―CMOS Hybrid Integrated Circuits for Reconfigurable Logic

    Qiangfei Xia;Warren Robinett;Michael W. Cumbie;Neel Banerjee

  • High precision tuning of state for memristive devices by adaptable variation-tolerant algorithm

    Fabien Alibart;Ligang Gao;Brian D Hoskins;Dmitri B Strukov

  • Pattern classification by memristive crossbar circuits using ex situ and in situ training

    Fabien Alibart;Elham Zamanidoost;Dmitri B. Strukov

  • CMOL FPGA: a reconfigurable architecture for hybrid digital circuits with two-terminal nanodevices

    Dmitri B Strukov;Konstantin K Likharev

  • Exponential ionic drift: fast switching and low volatility of thin-film memristors

    Dmitri B. Strukov;R. Stanley Williams

  • Wafer-scale integration of two-dimensional materials in high-density memristive crossbar arrays for artificial neural networks

    Shaochuan Chen;Shaochuan Chen;Mohammad Reza Mahmoodi;Yuanyuan Shi;Chandreswar Mahata

  • Implementation of multilayer perceptron network with highly uniform passive memristive crossbar circuits.

    F. Merrikh Bayat;M. Prezioso;B. Chakrabarti;H. Nili

  • Coupled Ionic and Electronic Transport Model of Thin‐Film Semiconductor Memristive Behavior

    Dmitri B. Strukov;Julien L. Borghetti;R. Stanley Williams

  • Flexible three-dimensional artificial synapse networks with correlated learning and trainable memory capability.

    Chaoxing Wu;Tae Whan Kim;Hwan Young Choi;Dmitri B. Strukov

  • CMOL: Devices, Circuits, and Architectures

    Konstantin K. Likharev;Dmitri B. Strukov

  • 3-D Memristor Crossbars for Analog and Neuromorphic Computing Applications

    Gina C. Adam;Brian D. Hoskins;Mirko Prezioso;Farnood Merrikh-Bayat

  • Thermophoresis/diffusion as a plausible mechanism for unipolar resistive switching in metal–oxide–metal memristors

    Dmitri B. Strukov;Fabien Alibart;R. Stanley Williams

  • Resistive switching and its suppression in Pt/Nb:SrTiO3 junctions

    Evgeny Mikheev;Brian D. Hoskins;Dmitri B. Strukov;Susanne Stemmer

  • Programmable CMOS/Memristor Threshold Logic

    Ligang Gao;F. Alibart;D. B. Strukov

  • Spike-timing-dependent plasticity learning of coincidence detection with passively integrated memristive circuits

    M. Prezioso;M. R. Mahmoodi;F. Merrikh Bayat;H. Nili

  • 4K-memristor analog-grade passive crossbar circuit.

    H. Kim;H. Kim;M. R. Mahmoodi;H. Nili;D. B. Strukov

  • Fast, energy-efficient, robust, and reproducible mixed-signal neuromorphic classifier based on embedded NOR flash memory technology

    X. Guo;F. Merrikh Bayat;M. Bavandpour;M. Klachko

  • Resistive switching phenomena in thin films: Materials, devices, and applications

    D. B. Strukov;H. Kohlstedt

Frequent Co-Authors

Konstantin K. Likharev
Konstantin K. Likharev Stony Brook University
R. Stanley Williams
R. Stanley Williams Texas A&M University
J. Joshua Yang
J. Joshua Yang University of Southern California
Timothy Sherwood
Timothy Sherwood University of California, Santa Barbara
Kwang-Ting Cheng
Kwang-Ting Cheng Hong Kong University of Science and Technology
Matthew D. Pickett
Matthew D. Pickett Hewlett-Packard (United States)
Zhiyong Li
Zhiyong Li Chinese Academy of Sciences
Yunseok Kim
Yunseok Kim Sungkyunkwan University
Sergei V. Kalinin
Sergei V. Kalinin University of Tennessee at Knoxville
Sumeet Walia
Sumeet Walia RMIT University

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Exploring these related pathways can help graduates tailor their education toward leadership, teaching, or specialized technical roles within the broad field of engineering.

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