Konstantin K. Likharev

Stony Brook University
United States

D-Index & Metrics D-index (Discipline H-index) only includes papers and citation values for an examined discipline in contrast to General H-index which accounts for publications across all disciplines.

Discipline name Citations Publications World Ranking National Ranking

Electronics and Electrical Engineering D-index 59 Citations 20,051 214 World Ranking 996 National Ranking 467

Research.com Recognitions

Awards & Achievements

2009 - IEEE Fellow For contributions to superconducting digital electronics and single-electron tunneling devices

1997 - Fellow of American Physical Society (APS) Citation For contributions to the theory and applications of superconducting and singleelectron devices

Overview

What is he best known for?

The fields of study Konstantin K. Likharev is best known for:

Transistor
Geometry
Electrical engineering

Konstantin K. Likharev is involved in relevant fields of research such as Parametric statistics and Energy (signal processing) in the field of Statistics. His Energy (signal processing) study often links to related topics such as Statistics. His Power (physics) research extends to the thematically linked field of Quantum mechanics. Many of his studies on Power (physics) apply to Quantum mechanics as well. Electrical engineering and Topology (electrical circuits) are frequently intertwined in his study. His study connects Electrical engineering and Topology (electrical circuits). His work in Voltage is not limited to one particular discipline; it also encompasses Transistor. In his papers, he integrates diverse fields, such as Optoelectronics and Transistor. His studies link Noise (video) with Image (mathematics).

His most cited work include:

Single-electron transistors: Electrostatic analogs of the DC SQUIDS (353 citations)
Dynamics of some single flux quantum devices: I. Parametric quantron (99 citations)
Quantum noise in SQUIDs (44 citations)

What are the main themes of his work throughout his whole career to date

The study of Transistor and Inductance are components of his Voltage research. Konstantin K. Likharev connects Transistor with Optoelectronics in his study. Optoelectronics is closely attributed to CMOS in his research. He combines topics linked to Amplifier with his work on CMOS. In the subject of Optics, he integrates adjacent academic fields such as Detector and Parametric oscillator. His Detector study frequently draws parallels with other fields, such as Optics. His work often combines Parametric oscillator and Amplifier studies. His Statistics research is intertwined with Parametric statistics and Realization (probability). He performs integrative Parametric statistics and Statistics research in his work.

Konstantin K. Likharev most often published in these fields:

Quantum mechanics (85.71%)
Josephson effect (76.19%)
Superconductivity (76.19%)

What were the highlights of his more recent work (between 1989-2003)?

Rapid single flux quantum (50.00%)
Telecommunications (50.00%)
Clock rate (50.00%)

In recent works Konstantin K. Likharev was focusing on the following fields of study:

In his research, Konstantin K. Likharev performs multidisciplinary study on Rapid single flux quantum and Josephson effect. In his works, he undertakes multidisciplinary study on Josephson effect and Rapid single flux quantum. Konstantin K. Likharev undertakes interdisciplinary study in the fields of Telecommunications and Bandwidth (computing) through his works. His multidisciplinary approach integrates Bandwidth (computing) and Telecommunications in his work. His study ties his expertise on Chip together with the subject of Clock rate. His research combines Clock rate and Chip. He performs integrative Parallel computing and Thread (computing) research in his work. He applies his multidisciplinary studies on Thread (computing) and Multithreading in his research. His study connects Operating system and Multithreading.

Between 1989 and 2003, his most popular works were:

COOL-0: Design of an RSFQ subsystem for petaflops computing (33 citations)
Sub-20-nm Electron Devices (18 citations)

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