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D-Index & Metrics

Materials Science

D-Index
86
Citations
42558
World Ranking
2017
National Ranking
645

Overview

Xinran Wang is a researcher affiliated with Nanjing University in China. Their research primarily focuses on engineering and materials science, with a substantial number of publications in subfields such as materials chemistry and electrical and electronic engineering. Biomedical engineering, molecular biology, and atomic and molecular physics, and optics also form part of their broader interdisciplinary work.

Their work spans key topics including 2D materials and applications, graphene research and applications, advanced memory and neural computing, perovskite materials and applications, advanced sensor and energy harvesting materials, nanowire synthesis and applications, and magnetic properties of thin films.

Xinran Wang has coauthored extensively with several researchers, including:

  • Yi Shi
  • Taotao Li
  • Zhihao Yu
  • Weisheng Li
  • Weisheng Zhao

Their frequent publication venues reflect a focus on applied physics and materials research, featuring:

  • Research Square (Research Square)
  • Applied Physics Letters
  • Nature Communications
  • Advanced Functional Materials
  • Ceramics International

Recent publications illustrate the research concentration on two-dimensional semiconductor materials and their applications, as well as on growth techniques and quantum properties. Selected recent papers include:

  • "Bandgap engineering of two-dimensional semiconductor materials", 2020, npj 2D Materials and Applications
  • "Epitaxial growth of wafer-scale molybdenum disulfide semiconductor single crystals on sapphire", 2021, Nature Nanotechnology
  • "Approaching the quantum limit in two-dimensional semiconductor contacts", 2023, Nature
  • "Recent Progress on Two-Dimensional Materials", 2021, Acta Physico-Chimica Sinica
  • "Uniform nucleation and epitaxy of bilayer molybdenum disulfide on sapphire", 2022, Nature

Best Publications

  • Chemically Derived, Ultrasmooth Graphene Nanoribbon Semiconductors

    Xiaolin Li;Xinran Wang;Li Zhang;Sangwon Lee

  • Highly conducting graphene sheets and Langmuir–Blodgett films

    Xiaolin Li;Guangyu Zhang;Xuedong Bai;Xiaoming Sun

  • N-doping of graphene through electrothermal reactions with ammonia.

    Xinran Wang;Xiaolin Li;Li Zhang;Youngki Yoon

  • Room-temperature all-semiconducting sub-10-nm graphene nanoribbon field-effect transistors.

    Xinran Wang;Yijian Ouyang;Xiaolin Li;Hailiang Wang

  • Strong Photoluminescence Enhancement of MoS2 through Defect Engineering and Oxygen Bonding

    Haiyan Nan;Zilu Wang;Wenhui Wang;Zheng Liang

  • Hopping transport through defect-induced localized states in molybdenum disulphide

    Hao Qiu;Tao Xu;Zilu Wang;Wei Ren

  • Bandgap engineering of two-dimensional semiconductor materials

    A. Chaves;J. G. Azadani;Hussain Alsalman;Hussain Alsalman;D. R. da Costa

  • Facile synthesis of high-quality graphene nanoribbons

    Liying Jiao;Xinran Wang;Georgi Diankov;Hailiang Wang

  • Atomic Layer Deposition of Metal Oxides on Pristine and Functionalized Graphene

    Xinran Wang;Scott M. Tabakman;Hongjie Dai

  • Towards intrinsic charge transport in monolayer molybdenum disulfide by defect and interface engineering

    Zhihao Yu;Yiming Pan;Yuting Shen;Zilu Wang

  • Epitaxial growth of wafer-scale molybdenum disulfide semiconductor single crystals on sapphire

    Taotao Li;Wei Guo;Liang Ma;Weisheng Li

  • High‐Electron‐Mobility and Air‐Stable 2D Layered PtSe2 FETs

    Yuda Zhao;Jingsi Qiao;Jingsi Qiao;Zhihao Yu;Peng Yu

  • Graphene and related two-dimensional materials: Structure-property relationships for electronics and optoelectronics

    Xinming Li;Li Tao;Zefeng Chen;Hui Fang

  • Selective etching of metallic carbon nanotubes by gas-phase reaction.

    Guangyu Zhang;Pengfei Qi;Xinran Wang;Yuerui Lu

  • Electrical characterization of back-gated bi-layer MoS2 field-effect transistors and the effect of ambient on their performances

    Hao Qiu;Lijia Pan;Zongni Yao;Junjie Li

  • Integrated digital inverters based on two-dimensional anisotropic ReS2 field-effect transistors.

    Erfu Liu;Yajun Fu;Yaojia Wang;Yanqing Feng

  • Approaching the quantum limit in two-dimensional semiconductor contacts

    Unknown

  • Uniform nucleation and epitaxy of bilayer molybdenum disulfide on sapphire

    Unknown

  • Etching and narrowing of graphene from the edges

    Xinran Wang;Hongjie Dai

  • A Self-Healable, Highly Stretchable, and Solution Processable Conductive Polymer Composite for Ultrasensitive Strain and Pressure Sensing

    Tao Wang;Ying Zhang;Qingchang Liu;Wen Cheng

  • Layer-by-layer thinning of MoS2 by plasma.

    Yulu Liu;Haiyan Nan;Xing Wu;Wei Pan

  • Field-effect transistors based on two-dimensional materials for logic applications

    Xin-Ran Wang;Yi Shi;Rong Zhang

  • Langmuir-blodgett assembly of densely aligned single-walled carbon nanotubes from bulk materials.

    Xiaolin Li;Li Zhang;Xinran Wang;Iwao Shimoyama

Frequent Co-Authors

Yi Shi
Yi Shi Nanjing University
Hongjie Dai
Hongjie Dai University of Hong Kong
Zhenhua Ni
Zhenhua Ni Southeast University
Xiaolin Li
Xiaolin Li Pacific Northwest National Laboratory
Lijia Pan
Lijia Pan Nanjing University
Jianbin Xu
Jianbin Xu Chinese University of Hong Kong
Feng Miao
Feng Miao Nanjing University
Guanghou Wang
Guanghou Wang Nanjing University
Jinlan Wang
Jinlan Wang Southeast University
Hailiang Wang
Hailiang Wang Yale University

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