World's Best Scientists 2026 revealed!

D-Index & Metrics

Materials Science

D-Index
86
Citations
42558
World Ranking
2015
National Ranking
646

Xinran Wang publication distribution in Materials Science in 2026

The chart shows the distribution of publications by all Research.com ranked scientists in the field of Materials Science in 2026. The highlighted bar marks where Xinran Wang sits on this spectrum.

50–69 publications: 28 scientists 70–89 publications: 152 scientists 90–109 publications: 356 scientists 110–129 publications: 487 scientists 130–149 publications: 723 scientists 150–169 publications: 835 scientists 170–189 publications: 850 scientists 190–209 publications: 891 scientists 210–229 publications: 862 scientists 230–249 publications: 766 scientists 250–269 publications: 726 scientists 270–289 publications: 665 scientists 290–309 publications: 593 scientists 310–329 publications: 537 scientists 330–349 publications: 477 scientists 350–369 publications: 440 scientists 370–389 publications: 356 scientists 390–409 publications: 321 scientists 410–429 publications: 256 scientists 430–449 publications: 246 scientists 450–469 publications: 216 scientists 470–489 publications: 212 scientists 490–509 publications: 174 scientists 510–529 publications: 194 scientists 530–549 publications: 162 scientists 550–569 publications: 131 scientists 570–589 publications: 111 scientists 590–609 publications: 103 scientists 610–629 publications: 99 scientists 630–649 publications: 77 scientists 650–669 publications: 92 scientists 670–689 publications: 56 scientists 690–709 publications: 53 scientists 710–729 publications: 53 scientists 730–749 publications: 38 scientists 750–769 publications: 52 scientists 770–789 publications: 43 scientists 790–809 publications: 38 scientists 810–829 publications: 34 scientists 830–849 publications: 25 scientists 850–869 publications: 18 scientists 870–889 publications: 20 scientists 890–909 publications: 24 scientists 910–929 publications: 27 scientists 930–949 publications: 20 scientists 950–969 publications: 17 scientists 970–989 publications: 10 scientists 990–1,009 publications: 16 scientists 1,010–1,029 publications: 13 scientists 1,030–1,049 publications: 12 scientists 1,050–1,069 publications: 9 scientists 1,070–1,089 publications: 8 scientists 1,090–1,109 publications: 7 scientists 1,110–1,129 publications: 9 scientists 1,130–1,149 publications: 2 scientists 1,150–1,162 publications: 5 scientists 1,163+ publications: 100 scientists
50 publications 1,163+

This scientist: 241 publications — 44th percentile

44% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 1,163 publications or more.

Xinran Wang D-index placement in Materials Science in 2026

The chart shows the D-index (discipline H-index) distribution of Materials Science scientists ranked by Research.com in 2026. The highlighted bar marks where Xinran Wang sits on this spectrum.

40–41 D-Index: 211 scientists 42–43 D-Index: 450 scientists 44–45 D-Index: 612 scientists 46–47 D-Index: 612 scientists 48–49 D-Index: 598 scientists 50–51 D-Index: 657 scientists 52–53 D-Index: 667 scientists 54–55 D-Index: 621 scientists 56–57 D-Index: 597 scientists 58–59 D-Index: 610 scientists 60–61 D-Index: 587 scientists 62–63 D-Index: 606 scientists 64–65 D-Index: 533 scientists 66–67 D-Index: 490 scientists 68–69 D-Index: 469 scientists 70–71 D-Index: 378 scientists 72–73 D-Index: 421 scientists 74–75 D-Index: 359 scientists 76–77 D-Index: 323 scientists 78–79 D-Index: 299 scientists 80–81 D-Index: 230 scientists 82–83 D-Index: 210 scientists 84–85 D-Index: 195 scientists 86–87 D-Index: 203 scientists 88–89 D-Index: 175 scientists 90–91 D-Index: 175 scientists 92–93 D-Index: 142 scientists 94–95 D-Index: 121 scientists 96–97 D-Index: 117 scientists 98–99 D-Index: 107 scientists 100–101 D-Index: 88 scientists 102–103 D-Index: 85 scientists 104–105 D-Index: 68 scientists 106–107 D-Index: 62 scientists 108–109 D-Index: 57 scientists 110–111 D-Index: 45 scientists 112–113 D-Index: 49 scientists 114–115 D-Index: 50 scientists 116–117 D-Index: 34 scientists 118–119 D-Index: 38 scientists 120–121 D-Index: 37 scientists 122–123 D-Index: 29 scientists 124–125 D-Index: 28 scientists 126–127 D-Index: 24 scientists 128–129 D-Index: 33 scientists 130–131 D-Index: 28 scientists 132–133 D-Index: 21 scientists 134–135 D-Index: 20 scientists 136–137 D-Index: 23 scientists 138–139 D-Index: 17 scientists 140–141 D-Index: 12 scientists 142–143 D-Index: 17 scientists 144–145 D-Index: 21 scientists 146–147 D-Index: 13 scientists 148–149 D-Index: 11 scientists 150–151 D-Index: 14 scientists 152–153 D-Index: 13 scientists 154–155 D-Index: 9 scientists 156–157 D-Index: 10 scientists 158–159 D-Index: 7 scientists 160–161 D-Index: 4 scientists 162–163 D-Index: 4 scientists 164 D-Index: 3 scientists 165+ D-Index: 98 scientists
40 D-Index 165+

This scientist: 86 D-Index — 84th percentile

84% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 165 D-Index or more.

Overview

Xinran Wang is a researcher affiliated with Nanjing University in China. Their research primarily focuses on engineering and materials science, with a substantial number of publications in subfields such as materials chemistry and electrical and electronic engineering. Biomedical engineering, molecular biology, and atomic and molecular physics, and optics also form part of their broader interdisciplinary work.

Their work spans key topics including 2D materials and applications, graphene research and applications, advanced memory and neural computing, perovskite materials and applications, advanced sensor and energy harvesting materials, nanowire synthesis and applications, and magnetic properties of thin films.

Xinran Wang has coauthored extensively with several researchers, including:

  • Yi Shi
  • Taotao Li
  • Zhihao Yu
  • Weisheng Li
  • Weisheng Zhao

Their frequent publication venues reflect a focus on applied physics and materials research, featuring:

  • Research Square (Research Square)
  • Applied Physics Letters
  • Nature Communications
  • Advanced Functional Materials
  • Ceramics International

Recent publications illustrate the research concentration on two-dimensional semiconductor materials and their applications, as well as on growth techniques and quantum properties. Selected recent papers include:

  • "Bandgap engineering of two-dimensional semiconductor materials", 2020, npj 2D Materials and Applications
  • "Epitaxial growth of wafer-scale molybdenum disulfide semiconductor single crystals on sapphire", 2021, Nature Nanotechnology
  • "Approaching the quantum limit in two-dimensional semiconductor contacts", 2023, Nature
  • "Recent Progress on Two-Dimensional Materials", 2021, Acta Physico-Chimica Sinica
  • "Uniform nucleation and epitaxy of bilayer molybdenum disulfide on sapphire", 2022, Nature

Best Publications

  • Chemically Derived, Ultrasmooth Graphene Nanoribbon Semiconductors

    Xiaolin Li;Xinran Wang;Li Zhang;Sangwon Lee

  • Highly conducting graphene sheets and Langmuir–Blodgett films

    Xiaolin Li;Guangyu Zhang;Xuedong Bai;Xiaoming Sun

  • N-doping of graphene through electrothermal reactions with ammonia.

    Xinran Wang;Xiaolin Li;Li Zhang;Youngki Yoon

  • Room-temperature all-semiconducting sub-10-nm graphene nanoribbon field-effect transistors.

    Xinran Wang;Yijian Ouyang;Xiaolin Li;Hailiang Wang

  • Strong Photoluminescence Enhancement of MoS2 through Defect Engineering and Oxygen Bonding

    Haiyan Nan;Zilu Wang;Wenhui Wang;Zheng Liang

  • Hopping transport through defect-induced localized states in molybdenum disulphide

    Hao Qiu;Tao Xu;Zilu Wang;Wei Ren

  • Bandgap engineering of two-dimensional semiconductor materials

    A. Chaves;J. G. Azadani;Hussain Alsalman;Hussain Alsalman;D. R. da Costa

  • Facile synthesis of high-quality graphene nanoribbons

    Liying Jiao;Xinran Wang;Georgi Diankov;Hailiang Wang

  • Atomic Layer Deposition of Metal Oxides on Pristine and Functionalized Graphene

    Xinran Wang;Scott M. Tabakman;Hongjie Dai

  • Towards intrinsic charge transport in monolayer molybdenum disulfide by defect and interface engineering

    Zhihao Yu;Yiming Pan;Yuting Shen;Zilu Wang

  • Epitaxial growth of wafer-scale molybdenum disulfide semiconductor single crystals on sapphire

    Taotao Li;Wei Guo;Liang Ma;Weisheng Li

  • High‐Electron‐Mobility and Air‐Stable 2D Layered PtSe2 FETs

    Yuda Zhao;Jingsi Qiao;Jingsi Qiao;Zhihao Yu;Peng Yu

  • Graphene and related two-dimensional materials: Structure-property relationships for electronics and optoelectronics

    Xinming Li;Li Tao;Zefeng Chen;Hui Fang

  • Selective etching of metallic carbon nanotubes by gas-phase reaction.

    Guangyu Zhang;Pengfei Qi;Xinran Wang;Yuerui Lu

  • Electrical characterization of back-gated bi-layer MoS2 field-effect transistors and the effect of ambient on their performances

    Hao Qiu;Lijia Pan;Zongni Yao;Junjie Li

  • Integrated digital inverters based on two-dimensional anisotropic ReS2 field-effect transistors.

    Erfu Liu;Yajun Fu;Yaojia Wang;Yanqing Feng

  • Approaching the quantum limit in two-dimensional semiconductor contacts

    Unknown

  • Uniform nucleation and epitaxy of bilayer molybdenum disulfide on sapphire

    Unknown

  • Etching and narrowing of graphene from the edges

    Xinran Wang;Hongjie Dai

  • A Self-Healable, Highly Stretchable, and Solution Processable Conductive Polymer Composite for Ultrasensitive Strain and Pressure Sensing

    Tao Wang;Ying Zhang;Qingchang Liu;Wen Cheng

  • Layer-by-layer thinning of MoS2 by plasma.

    Yulu Liu;Haiyan Nan;Xing Wu;Wei Pan

  • Field-effect transistors based on two-dimensional materials for logic applications

    Xin-Ran Wang;Yi Shi;Rong Zhang

  • Langmuir-blodgett assembly of densely aligned single-walled carbon nanotubes from bulk materials.

    Xiaolin Li;Li Zhang;Xinran Wang;Iwao Shimoyama

Frequent Co-Authors

Yi Shi
Yi Shi Nanjing University
Hongjie Dai
Hongjie Dai University of Hong Kong
Zhenhua Ni
Zhenhua Ni Southeast University
Xiaolin Li
Xiaolin Li Pacific Northwest National Laboratory
Lijia Pan
Lijia Pan Nanjing University
Jianbin Xu
Jianbin Xu Chinese University of Hong Kong
Feng Miao
Feng Miao Nanjing University
Guanghou Wang
Guanghou Wang Nanjing University
Jinlan Wang
Jinlan Wang Southeast University
Hailiang Wang
Hailiang Wang Yale University

If you think any of the details on this page are incorrect, let us know.

Report an issue

We appreciate your kind effort to assist us to improve this page, it would be helpful providing us with as much detail as possible in the text box below:

Best Scientists Citing Xinran Wang

Trending Scientists

Recently Published Articles