Xinran Wang mostly deals with Nanotechnology, Graphene, Carbon nanotube, Optoelectronics and Graphene nanoribbons. Xinran Wang has researched Nanotechnology in several fields, including Field-effect transistor, Density functional theory, Semiconductor and Band gap. His Graphene research incorporates elements of Phonon, Semiconductor device and Nanometre.
His study in the field of Nanotube also crosses realms of Macromolecule. His studies deal with areas such as Ultrashort pulse and Nanostructure as well as Optoelectronics. His Graphene nanoribbons research is multidisciplinary, incorporating elements of Condensed matter physics and Graphene oxide paper.
His scientific interests lie mostly in Optoelectronics, Graphene, Nanotechnology, Condensed matter physics and Transistor. Xinran Wang regularly links together related areas like Field-effect transistor in his Optoelectronics studies. Specifically, his work in Graphene is concerned with the study of Graphene oxide paper.
He has included themes like Band gap and Density functional theory in his Nanotechnology study. His work carried out in the field of Condensed matter physics brings together such families of science as Scattering and Weak localization, Magnetoresistance. His study looks at the relationship between Carbon nanotube and fields such as Raman spectroscopy, as well as how they intersect with chemical problems.
His main research concerns Optoelectronics, Heterojunction, Transistor, Monolayer and Semiconductor. His Optoelectronics research is multidisciplinary, incorporating elements of Field-effect transistor, Thin film and Graphene. His Graphene study combines topics in areas such as Electron mobility, Photoconductivity, Terahertz radiation, CMOS and Ultraviolet.
The concepts of his Transistor study are interwoven with issues in Logic gate and Ferroelectricity. Xinran Wang has researched Monolayer in several fields, including Chemical physics, Layer, Exciton and Photoluminescence. The various areas that Xinran Wang examines in his Semiconductor study include Semiconductor device and Doping.
Xinran Wang mainly investigates Optoelectronics, Heterojunction, Graphene, Monolayer and Photodetector. His Optoelectronics research includes elements of Transistor and Absorption. His Heterojunction research is multidisciplinary, relying on both Thin film, Pentacene and Electronic band structure.
As part of the same scientific family, Xinran Wang usually focuses on Graphene, concentrating on Electron mobility and intersecting with Ultraviolet. His Monolayer research incorporates elements of Chemical physics, Relaxation, Exciton, Dielectric and Photoluminescence. His Semiconductor research integrates issues from Semiconductor device and Doping.
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Chemically Derived, Ultrasmooth Graphene Nanoribbon Semiconductors
Xiaolin Li;Xinran Wang;Li Zhang;Sangwon Lee.
Science (2008)
Highly conducting graphene sheets and Langmuir–Blodgett films
Xiaolin Li;Guangyu Zhang;Xuedong Bai;Xiaoming Sun.
Nature Nanotechnology (2008)
N-doping of graphene through electrothermal reactions with ammonia.
Xinran Wang;Xiaolin Li;Li Zhang;Youngki Yoon.
Science (2009)
Room-temperature all-semiconducting sub-10-nm graphene nanoribbon field-effect transistors.
Xinran Wang;Yijian Ouyang;Xiaolin Li;Hailiang Wang.
Physical Review Letters (2008)
Facile synthesis of high-quality graphene nanoribbons
Liying Jiao;Xinran Wang;Georgi Diankov;Hailiang Wang.
Nature Nanotechnology (2010)
Strong Photoluminescence Enhancement of MoS2 through Defect Engineering and Oxygen Bonding
Haiyan Nan;Zilu Wang;Wenhui Wang;Zheng Liang.
ACS Nano (2014)
Hopping transport through defect-induced localized states in molybdenum disulphide
Hao Qiu;Tao Xu;Zilu Wang;Wei Ren.
Nature Communications (2013)
Atomic Layer Deposition of Metal Oxides on Pristine and Functionalized Graphene
Xinran Wang;Scott M. Tabakman;Hongjie Dai.
Journal of the American Chemical Society (2008)
Selective etching of metallic carbon nanotubes by gas-phase reaction.
Guangyu Zhang;Pengfei Qi;Xinran Wang;Yuerui Lu.
Science (2006)
Electrical characterization of back-gated bi-layer MoS2 field-effect transistors and the effect of ambient on their performances
Hao Qiu;Lijia Pan;Zongni Yao;Junjie Li.
Applied Physics Letters (2012)
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