World's Best Scientists 2026 revealed!

D-Index & Metrics

Materials Science

D-Index
49
Citations
7818
World Ranking
10626
National Ranking
466

Engineering and Technology

D-Index
49
Citations
7805
World Ranking
4393
National Ranking
105

Overview

Do Kyung Hwang is affiliated with the Korea Institute of Science and Technology in South Korea. Their research focuses primarily on materials science and engineering, with significant contributions in subfields such as materials chemistry, electrical and electronic engineering, biomedical engineering, polymers and plastics, and electronic, optical, and magnetic materials.

The scientist's work extensively covers topics related to 2D materials and applications, MXene and MAX phase materials, perovskite materials and applications, graphene research and applications, advanced memory and neural computing, organic electronics and photovoltaics, and neural networks and reservoir computing.

Do Kyung Hwang has collaborated frequently with several researchers including Jongtae Ahn, Jisu Jang, Soohyung Park, Kenji Watanabe, and Tae Wook Kim.

Their research has been published in various scientific journals, with frequent appearances in:

  • Advanced Materials
  • ACS Applied Materials & Interfaces
  • ACS Photonics
  • Advanced Optical Materials
  • ACS Nano

Among the recent papers authored or co-authored by Do Kyung Hwang are:

  • "Fermi-Level Pinning-Free WSe2 Transistors via 2D Van der Waals Metal Contacts and Their Circuits," 2022, Advanced Materials
  • "2D MoTe2/ReS2 van der Waals Heterostructure for High-Performance and Linear Polarization-Sensitive Photodetector," 2021, ACS Photonics
  • "Near-Infrared Self-Powered Linearly Polarized Photodetection and Digital Incoherent Holography Using WSe2/ReSe2 van der Waals Heterostructure," 2021, ACS Nano
  • "Recent progress in the development of backplane thin film transistors for information displays," 2020, Journal of Information Display
  • "Self-Powered Visible-Invisible Multiband Detection and Imaging Achieved Using High-Performance 2D MoTe2/MoS2 Semivertical Heterojunction Photodiodes," 2020, ACS Applied Materials & Interfaces

Best Publications

  • Improving the Gate Stability of ZnO Thin-Film Transistors with Aluminum Oxide Dielectric Layers

    Min Suk Oh;Kimoon Lee;J. H. Song;Byoung H. Lee

  • Few-Layer Black Phosphorus Field-Effect Transistors with Reduced Current Fluctuation

    Junhong Na;Young Tack Lee;Jung Ah Lim;Do Kyung Hwang

  • Comparative studies on the stability of polymer versus SiO2 gate dielectrics for pentacene thin-film transistors

    D. K. Hwang;Kimoon Lee;Jae Hoon Kim;Seongil Im

  • Top-Gate Organic Field-Effect Transistors with High Environmental and Operational Stability

    Do Kyung Hwang;Canek Fuentes-Hernandez;Jungbae Kim;William J. Potscavage

  • Hysteresis mechanisms of pentacene thin-film transistors with polymer/oxide bilayer gate dielectrics

    D. K. Hwang;Min Suk Oh;Jung Min Hwang;Jae Hoon Kim

  • Ultrasensitive PbS quantum-dot-sensitized InGaZnO hybrid photoinverter for near-infrared detection and imaging with high photogain

    Do Kyung Hwang;Young Tack Lee;Hee Sung Lee;Yun Jae Lee;Yun Jae Lee

  • Black Phosphorus–Zinc Oxide Nanomaterial Heterojunction for p–n Diode and Junction Field-Effect Transistor

    Pyo Jin Jeon;Young Tack Lee;June Yeong Lim;Jin Sung Kim

  • Fermi‐Level Pinning‐Free WSe2 Transistors via 2D Van der Waals Metal Contacts and Their Circuits

    Unknown

  • Nonvolatile Ferroelectric Memory Circuit Using Black Phosphorus Nanosheet-Based Field-Effect Transistors with P(VDF-TrFE) Polymer.

    Young Tack Lee;Hyeokjae Kwon;Jin Sung Kim;Hong Hee Kim

  • Inverted quantum dot light emitting diodes using polyethylenimine ethoxylated modified ZnO.

    Hong Hee Kim;Soohyung Park;Yeonjin Yi;Dong Ick Son

  • Homogeneous 2D MoTe2 p–n Junctions and CMOS Inverters formed by Atomic-Layer-Deposition-Induced Doping

    June Yeong Lim;Atiye Pezeshki;Sehoon Oh;Jin Sung Kim

  • Recent progress in the development of backplane thin film transistors for information displays

    Unknown

  • Solvent and polymer matrix effects on TIPS-pentacene/polymer blend organic field-effect transistors

    Do Kyung Hwang;Canek Fuentes-Hernandez;John D. Berrigan;Yunnan Fang

  • Phase evolution of perovskite LaNiO3 nanofibers for supercapacitor application and p-type gas sensing properties of LaOCl–NiO composite nanofibers

    Do Kyung Hwang;Soohyun Kim;Jong Heun Lee;In Sung Hwang

  • ZnO-based nonvolatile memory thin-film transistors with polymer dielectric/ferroelectric double gate insulators

    Seok Hwan Noh;Wonjun Choi;Min Suk Oh;D. K. Hwang;D. K. Hwang

  • Mixed-Dimensional 1D ZnO–2D WSe2 van der Waals Heterojunction Device for Photosensors

    Young Tack Lee;Young Tack Lee;Pyo Jin Jeon;Jae Hyun Han;Jae Hyun Han;Jongtae Ahn

  • Graphene Versus Ohmic Metal as Source‐Drain Electrode for MoS2 Nanosheet Transistor Channel

    Young Tack Lee;Kyunghee Choi;Hee Sung Lee;Sung Wook Min

  • Enhanced light scattering and trapping effect of Ag nanowire mesh electrode for high efficient flexible organic solar cell

    Byung Yong Wang;Byung Yong Wang;Tae Hee Yoo;Tae Hee Yoo;Ju Won Lim;Byoung In Sang

  • Flexible and stable solution-processed organic field-effect transistors

    D.K. Hwang;C. Fuentes-Hernandez;J.B. Kim;W.J. Potscavage

  • 2D MoTe2/ReS2 van der Waals Heterostructure for High-Performance and Linear Polarization-Sensitive Photodetector

    Jongtae Ahn;Ji-Hoon Kyhm;Hee Kyoung Kang;Namhee Kwon

  • Polymer/YOx Hybrid‐Sandwich Gate Dielectrics for Semitransparent Pentacene Thin‐Film Transistors Operating Under 5 V

    Do Kyung Hwang;Chang Su Kim;Jeong Min Choi;Kimoon Lee

  • Dual Gate Black Phosphorus Field Effect Transistors on Glass for NOR Logic and Organic Light Emitting Diode Switching

    Jin Sung Kim;Pyo Jin Jeon;Junyeong Lee;Kyunghee Choi

  • Studies on poly(methyl methacrylate) dielectric layer for field effect transistor: Influence of polymer tacticity

    Ji Hoon Park;D.K. Hwang;Jiyoul Lee;Seongil Im

Frequent Co-Authors

Won Kook Choi
Won Kook Choi Korea Institute of Science and Technology
Seongil Im
Seongil Im Yonsei University
Bernard Kippelen
Bernard Kippelen Georgia Institute of Technology
Canek Fuentes-Hernandez
Canek Fuentes-Hernandez Northeastern University
Jung Ah Lim
Jung Ah Lim Korea Institute of Science and Technology
Seth R. Marder
Seth R. Marder University of Colorado Boulder
Byeong Kwon Ju
Byeong Kwon Ju Korea University
Hyoung Joon Choi
Hyoung Joon Choi Yonsei University
Stephen Barlow
Stephen Barlow Georgia Institute of Technology
Chong-Yun Kang
Chong-Yun Kang Korea Institute of Science and Technology

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