D-Index & Metrics Best Publications

D-Index & Metrics D-index (Discipline H-index) only includes papers and citation values for an examined discipline in contrast to General H-index which accounts for publications across all disciplines.

Discipline name D-index D-index (Discipline H-index) only includes papers and citation values for an examined discipline in contrast to General H-index which accounts for publications across all disciplines. Citations Publications World Ranking National Ranking
Materials Science D-index 43 Citations 8,804 263 World Ranking 7534 National Ranking 143
Electronics and Electrical Engineering D-index 39 Citations 7,758 286 World Ranking 2894 National Ranking 51

Overview

What is he best known for?

The fields of study he is best known for:

  • Optics
  • Semiconductor
  • Electrical engineering

Navab Singh focuses on Optoelectronics, Nanowire, Transistor, MOSFET and Condensed matter physics. His Optoelectronics research integrates issues from Threshold voltage, Electrical engineering and Resistive random-access memory. His work carried out in the field of Nanowire brings together such families of science as Field-effect transistor, Quantum tunnelling, CMOS and Silicon.

His Transistor research is multidisciplinary, relying on both Crystallography, Oxide, Logic gate and Silicon-germanium. His MOSFET research focuses on subjects like Silicon on insulator, which are linked to p–n junction. His Brillouin zone study, which is part of a larger body of work in Condensed matter physics, is frequently linked to Magnetic hysteresis and Magnetization, bridging the gap between disciplines.

His most cited work include:

  • High-performance fully depleted silicon nanowire (diameter /spl les/ 5 nm) gate-all-around CMOS devices (513 citations)
  • Silicon Nanowire Arrays for Label-Free Detection of DNA (377 citations)
  • Vertical Si-Nanowire $n$ -Type Tunneling FETs With Low Subthreshold Swing ( $\leq \hbox{50}\ \hbox{mV/decade}$ ) at Room Temperature (260 citations)

What are the main themes of his work throughout his whole career to date?

His primary areas of study are Optoelectronics, Nanowire, Condensed matter physics, Nanotechnology and CMOS. His research in Optoelectronics intersects with topics in Transistor, MOSFET and Electrical engineering. His research integrates issues of Nanoelectronics, Electronic engineering, Logic gate, Non-volatile memory and Quantum tunnelling in his study of Nanowire.

His Ferromagnetism study in the realm of Condensed matter physics connects with subjects such as Magnetic hysteresis, Magnetization, Magnetic anisotropy and Micromagnetics. His work focuses on many connections between Nanotechnology and other disciplines, such as Lithography, that overlap with his field of interest in Phase-shift mask and Nanostructure. Navab Singh interconnects Doping and Voltage in the investigation of issues within Silicon.

He most often published in these fields:

  • Optoelectronics (55.03%)
  • Nanowire (28.77%)
  • Condensed matter physics (20.95%)

What were the highlights of his more recent work (between 2017-2021)?

  • Optoelectronics (55.03%)
  • Wafer (9.22%)
  • CMOS (16.76%)

In recent papers he was focusing on the following fields of study:

The scientist’s investigation covers issues in Optoelectronics, Wafer, CMOS, Immersion lithography and Microelectromechanical systems. His study in Optoelectronics is interdisciplinary in nature, drawing from both Electronic circuit and Nitride. The concepts of his Wafer study are interwoven with issues in Electron-beam lithography, Scanning electron microscope, Optics, Subtractive color and Nanomaterials.

His CMOS study also includes fields such as

  • Ultrasonic sensor which is related to area like Back end of line,
  • Polarization that connect with fields like Energy conversion efficiency and Band-pass filter. His studies in Immersion lithography integrate themes in fields like Wavelength, Lithography and Nanopillar. His Microelectromechanical systems study deals with Detector intersecting with Doping.

Between 2017 and 2021, his most popular works were:

  • CMOS-compatible all-Si metasurface polarizing bandpass filters on 12-inch wafers. (19 citations)
  • Large-area pixelated metasurface beam deflector on a 12-inch glass wafer for random point generation (18 citations)
  • On-Chip Tailorability of Capacitive Gas Sensors Integrated with Metal-Organic Framework Films. (17 citations)

In his most recent research, the most cited papers focused on:

  • Optics
  • Semiconductor
  • Electrical engineering

His scientific interests lie mostly in Wafer, Optoelectronics, Immersion lithography, CMOS and Optics. His Wafer research incorporates elements of Electron-beam lithography, Nanomaterials, Scanning electron microscope and Subtractive color. In his work, Nanotechnology is strongly intertwined with Lithography, which is a subfield of Nanomaterials.

His Optoelectronics research includes elements of Resistive random-access memory and X-ray photoelectron spectroscopy. His biological study deals with issues like Wavelength, which deal with fields such as Laser beams, Silicon, Nanostructure fabrication and Physical vapor deposition. The CMOS study combines topics in areas such as Polarizer, Polarization, Waveplate and Half wave.

This overview was generated by a machine learning system which analysed the scientist’s body of work. If you have any feedback, you can contact us here.

Best Publications

High-performance fully depleted silicon nanowire (diameter /spl les/ 5 nm) gate-all-around CMOS devices

N. Singh;A. Agarwal;L.K. Bera;T.Y. Liow.
IEEE Electron Device Letters (2006)

754 Citations

High-performance fully depleted silicon nanowire (diameter /spl les/ 5 nm) gate-all-around CMOS devices

N. Singh;A. Agarwal;L.K. Bera;T.Y. Liow.
IEEE Electron Device Letters (2006)

754 Citations

Silicon Nanowire Arrays for Label-Free Detection of DNA

Zhiqiang Gao;Ajay Agarwal;Alastair D Trigg;Navab Singh.
Analytical Chemistry (2007)

563 Citations

Silicon Nanowire Arrays for Label-Free Detection of DNA

Zhiqiang Gao;Ajay Agarwal;Alastair D Trigg;Navab Singh.
Analytical Chemistry (2007)

563 Citations

DNA sensing by silicon nanowire: charge layer distance dependence.

Guo-Jun Zhang;Gang Zhang;Jay Huiyi Chua;Ru-Ern Chee.
Nano Letters (2008)

336 Citations

DNA sensing by silicon nanowire: charge layer distance dependence.

Guo-Jun Zhang;Gang Zhang;Jay Huiyi Chua;Ru-Ern Chee.
Nano Letters (2008)

336 Citations

Stacked silicon-germanium nanowire structure and method of forming the same

Guo Qiang Lo;Lakshmi Kanta Bera;Hoai Son Nguyen;Navab Singh.
(2006)

288 Citations

Stacked silicon-germanium nanowire structure and method of forming the same

Guo Qiang Lo;Lakshmi Kanta Bera;Hoai Son Nguyen;Navab Singh.
(2006)

288 Citations

Vertical Si-Nanowire $n$ -Type Tunneling FETs With Low Subthreshold Swing ( $\leq \hbox{50}\ \hbox{mV/decade}$ ) at Room Temperature

R Gandhi;Zhixian Chen;N Singh;K Banerjee.
IEEE Electron Device Letters (2011)

285 Citations

Vertical Si-Nanowire $n$ -Type Tunneling FETs With Low Subthreshold Swing ( $\leq \hbox{50}\ \hbox{mV/decade}$ ) at Room Temperature

R Gandhi;Zhixian Chen;N Singh;K Banerjee.
IEEE Electron Device Letters (2011)

285 Citations

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