World's Best Scientists 2026 revealed!

D-Index & Metrics

Electronics and Electrical Engineering

D-Index
51
Citations
10671
World Ranking
2658
National Ranking
46

Materials Science

D-Index
59
Citations
12340
World Ranking
7382
National Ranking
135

Overview

Navab Singh is affiliated with the Agency for Science, Technology and Research in Singapore. Their research spans several fields, with a primary focus on engineering and materials science. A significant portion of their publications is concentrated in electrical and electronic engineering, along with contributions in electronic, optical and magnetic materials, atomic and molecular physics and optics, biomedical engineering, and aerospace engineering.

The main topics of Navab Singh's research include silicon carbide semiconductor technologies, metamaterials and metasurfaces applications, semiconductor materials and devices, advanced antenna and metasurface technologies, photonic crystals and applications, plasmonic and surface plasmon research, and acoustic wave resonator technologies.

Selected recent publications by Navab Singh feature research across prominent journals and venues:

  • Large-area metasurface on CMOS-compatible fabrication platform: driving flat optics from lab to fab, 2020, published in Nanophotonics
  • Chip-Level Integration of Covalent Organic Frameworks for Trace Benzene Sensing, 2020, published in ACS Sensors
  • CMOS-compatible a-Si metalenses on a 12-inch glass wafer for fingerprint imaging, 2020, published in Nanophotonics
  • Metasurface-based subtractive color filter fabricated on a 12-inch glass wafer using a CMOS platform, 2020, published in Photonics Research
  • Magnetic Tunability of Permalloy Artificial Spin Ice Structures, 2020, published in Physical Review Applied

Frequent coauthors include:

  • L. K. Bera
  • Nanxi Li
  • Umesh Chand
  • Zhengji Xu
  • Yuan Dong

Navab Singh often publishes in venues such as the Conference on Lasers and Electro-Optics, Materials Science Forum, Diffusion and Defect Data: Solid State Data/ Solid State Phenomena, Nanophotonics, and the IEEE Electronics Packaging Technology Conference.

Best Publications

  • High-performance fully depleted silicon nanowire (diameter /spl les/ 5 nm) gate-all-around CMOS devices

    N. Singh;A. Agarwal;L.K. Bera;T.Y. Liow

  • Silicon Nanowire Arrays for Label-Free Detection of DNA

    Zhiqiang Gao;Ajay Agarwal;Alastair D Trigg;Navab Singh

  • DNA sensing by silicon nanowire: charge layer distance dependence.

    Guo-Jun Zhang;Gang Zhang;Jay Huiyi Chua;Ru-Ern Chee

  • Vertical Si-Nanowire $n$ -Type Tunneling FETs With Low Subthreshold Swing ( $\leq \hbox{50}\ \hbox{mV/decade}$ ) at Room Temperature

    R Gandhi;Zhixian Chen;N Singh;K Banerjee

  • Stacked silicon-germanium nanowire structure and method of forming the same

    Guo Qiang Lo;Lakshmi Kanta Bera;Hoai Son Nguyen;Navab Singh

  • Vertical Silicon-Nanowire Formation and Gate-All-Around MOSFET

    B. Yang;K.D. Buddharaju;S.H.G. Teo;N. Singh

  • Reconfigurable MEMS Fano metasurfaces with multiple-input-output states for logic operations at terahertz frequencies.

    Manukumara Manjappa;Prakash Pitchappa;Navab Singh;Nan Wang

  • CMOS-Compatible Vertical-Silicon-Nanowire Gate-All-Around p-Type Tunneling FETs With $\leq 50$ -mV/decade Subthreshold Swing

    R. Gandhi;Zhixian Chen;N. Singh;K. Banerjee

  • Active Control of Electromagnetically Induced Transparency Analog in Terahertz MEMS Metamaterial

    Prakash Pitchappa;Prakash Pitchappa;Manukumara Manjappa;Chong Pei Ho;Chong Pei Ho;Chong Pei Ho;Ranjan Singh

  • Large area patterned magnetic nanostructures

    A O Adeyeye;N Singh;N Singh

  • $\hbox{HfO}_{x}/\hbox{TiO}_{x}/\hbox{HfO}_{x}/ \hbox{TiO}_{x}$ Multilayer-Based Forming-Free RRAM Devices With Excellent Uniformity

    Z Fang;H Y Yu;X Li;N Singh

  • Demonstration of Tunneling FETs Based on Highly Scalable Vertical Silicon Nanowires

    Z.X. Chen;H.Y. Yu;N. Singh;N.S. Shen

  • Ultra-Narrow Silicon Nanowire Gate-All-Around CMOS Devices: Impact of Diameter, Channel-Orientation and Low Temperature on Device Performance

    N. Singh;F. Y. Lim;W. W. Fang;S. C. Rustagi

  • Si, SiGe Nanowire Devices by Top–Down Technology and Their Applications

    N. Singh;K.D. Buddharaju;S.K. Manhas;A. Agarwal

  • Magnetic antidot nanostructures: effect of lattice geometry.

    C C Wang;A O Adeyeye;N Singh

  • Collective spin modes in monodimensional magnonic crystals consisting of dipolarly coupled nanowires

    G. Gubbiotti;S. Tacchi;G. Carlotti;N. Singh

  • Physical mechanisms of endurance degradation in TMO-RRAM

    B. Chen;Y. Lu;B. Gao;Y.H. Fu

  • Magnetostatic interaction in arrays of nanometric permalloy wires: A magneto-optic Kerr effect and a Brillouin light scattering study

    G. Gubbiotti;S. Tacchi;G. Carlotti;P. Vavassori

  • Excimer laser-annealed dopant segregated Schottky (ELA-DSS) Si nanowire gate-all-around (GAA) pFET with near zero effective Schottky barrier height (SBH)

    Y. K. Chin;K. L. Pey;N. Singh;G. Q. Lo

  • Chip-Level Thermoelectric Power Generators Based on High-Density Silicon Nanowire Array Prepared With Top-Down CMOS Technology

    Y Li;K Buddharaju;N Singh;G Q Lo

Frequent Co-Authors

Dim-Lee Kwong
Dim-Lee Kwong National University of Singapore
Nanxi Li
Nanxi Li Institute of Microelectronics
Chengkuo Lee
Chengkuo Lee National University of Singapore
Guo-Qiang Lo
Guo-Qiang Lo Global Foundries
Prakash Pitchappa
Prakash Pitchappa Agency for Science, Technology and Research
Yuan Hsing Fu
Yuan Hsing Fu Agency for Science, Technology and Research
Sungjoo Lee
Sungjoo Lee Sungkyunkwan University
Giorgio Baccarani
Giorgio Baccarani University of Bologna
Elena Gnani
Elena Gnani University of Bologna
Hao Yu
Hao Yu South China University of Technology

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