World's Best Scientists 2026 revealed!

D-Index & Metrics

Electronics and Electrical Engineering

D-Index
60
Citations
12702
World Ranking
1652
National Ranking
37

Materials Science

D-Index
61
Citations
12895
World Ranking
6815
National Ranking
283

Overview

Sungjoo Lee is affiliated with Sungkyunkwan University in South Korea and has contributed extensively to research within engineering and materials science. Their work predominantly focuses on electrical and electronic engineering as well as materials chemistry, engaging deeply with subfields such as polymers and plastics, biomedical engineering, and cellular and molecular neuroscience.

Their research topics cover a broad spectrum including advanced memory and neural computing, ferroelectric and negative capacitance devices, and 2D materials and applications. Further specialization is evident in areas related to MXene and MAX phase materials, perovskite materials and applications, conducting polymers, and semiconductor materials and devices.

Frequent co-authors in their publications include Sungpyo Baek, Haeju Choi, Jingjie Niu, Yoonmyung Lee, and Jeong Ho Cho.

Several publication venues frequently feature their work. These include:

  • Advanced Materials
  • ACS Nano
  • ACS Applied Materials & Interfaces
  • EcoMat
  • Advanced Science

Representative recent papers provide insight into the nature of their research:

  • Modulation of the Electronic Properties of MXene (Ti3C2Tx) via Surface-Covalent Functionalization with Diazonium, 2021, ACS Nano
  • 2D MXene-TiO2 Core-Shell Nanosheets as a Data-Storage Medium in Memory Devices, 2020, Advanced Materials
  • Two-Dimensional CIPS-InSe van der Waal Heterostructure Ferroelectric Field Effect Transistor for Nonvolatile Memory Applications, 2022, ACS Nano
  • Ferroelectric Field-Effect-Transistor Integrated with Ferroelectrics Heterostructure, 2022, Advanced Science
  • A multiple negative differential resistance heterojunction device and its circuit application to ternary static random access memory, 2020, Nanoscale Horizons

Best Publications

  • Layer-controlled CVD growth of large-area two-dimensional MoS2 films

    Jaeho Jeon;Sung Kyu Jang;Su Min Jeon;Gwangwe Yoo

  • Phosphorene/rhenium disulfide heterojunction-based negative differential resistance device for multi-valued logic.

    Jaewoo Shim;Seyong Oh;Dong-Ho Kang;Seo-Hyeon Jo

  • N-type Schottky barrier source/drain MOSFET using ytterbium silicide

    Shiyang Zhu;Jingde Chen;M.-F. Li;M.-F. Li;S.J. Lee

  • Correction: Surface group modification and carrier transport properties of layered transition metal carbides (Ti2CT(x), T: -OH, -F and -O).

    Shen Lai;Jaeho Jeon;Sung Kyu Jang;Jiao Xu

  • Dye-sensitized MoS2 photodetector with enhanced spectral photoresponse.

    Seong Hun Yu;Youngbin Lee;Sung Kyu Jang;Jinyeong Kang

  • Vertical Si-Nanowire $n$ -Type Tunneling FETs With Low Subthreshold Swing ( $\leq \hbox{50}\ \hbox{mV/decade}$ ) at Room Temperature

    R Gandhi;Zhixian Chen;N Singh;K Banerjee

  • A Platform for Large‐Scale Graphene Electronics – CVD Growth of Single‐Layer Graphene on CVD‐Grown Hexagonal Boron Nitride

    Min Wang;Sung Kyu Jang;Won Jun Jang;Minwoo Kim

  • High-Performance Transition Metal Dichalcogenide Photodetectors Enhanced by Self-Assembled Monolayer Doping

    Dong Ho Kang;Myung Soo Kim;Jaewoo Shim;Jeaho Jeon

  • Large-Area MXene Electrode Array for Flexible Electronics.

    Benzheng Lyu;Minje Kim;Hongyue Jing;Joohoon Kang

  • Ge-Photodetectors for Si-Based Optoelectronic Integration

    Jian Wang;Sungjoo Lee

  • An Ultrahigh-Performance Photodetector based on a Perovskite-Transition-Metal-Dichalcogenide Hybrid Structure.

    Dong-Ho Kang;Seong Ryul Pae;Jaewoo Shim;Gwangwe Yoo

  • MXene Electrode for the Integration of WSe2 and MoS2 Field Effect Transistors

    Jiao Xu;Jaewoo Shim;Jin-Hong Park;Sungjoo Lee

  • High-Performance 2D Rhenium Disulfide (ReS2) Transistors and Photodetectors by Oxygen Plasma Treatment

    Jaewoo Shim;Aely Oh;Dong-Ho Kang;Seyong Oh

  • CMOS-Compatible Vertical-Silicon-Nanowire Gate-All-Around p-Type Tunneling FETs With $\leq 50$ -mV/decade Subthreshold Swing

    R. Gandhi;Zhixian Chen;N. Singh;K. Banerjee

  • Plasma-Treated Thickness-Controlled Two-Dimensional Black Phosphorus and Its Electronic Transport Properties.

    Jingyuan Jia;Sung Kyu Jang;Shen Lai;Jiao Xu

  • Ultrasensitive MoS2 photodetector by serial nano-bridge multi-heterojunction.

    Ki Seok Kim;You Jin Ji;Ki Hyun Kim;Seunghyuk Choi

  • Epitaxial Synthesis of Molybdenum Carbide and Formation of a Mo2C/MoS2 Hybrid Structure via Chemical Conversion of Molybdenum Disulfide

    Jaeho Jeon;Yereum Park;Seunghyuk Choi;Jinhee Lee

  • Modulation of the Electronic Properties of MXene (Ti3C2Tx) via Surface-Covalent Functionalization with Diazonium.

    Hongyue Jing;Hyeonwoo Yeo;Benzheng Lyu;Junga Ryou

  • Controllable nondegenerate p-type doping of tungsten diselenide by octadecyltrichlorosilane.

    Dong-Ho Kang;Jaewoo Shim;Sung Kyu Jang;Jeaho Jeon

  • Synthesis and Characterization of Hexagonal Boron Nitride as a Gate Dielectric

    Sung Kyu Jang;Jiyoun Youn;Young Jae Song;Sungjoo Lee

  • A High-Performance WSe2 /h-BN Photodetector using a Triphenylphosphine (PPh3 )-Based n-Doping Technique.

    Seo Hyeon Jo;Dong Ho Kang;Jaewoo Shim;Jaeho Jeon

Frequent Co-Authors

Dim-Lee Kwong
Dim-Lee Kwong National University of Singapore
Jeong Ho Cho
Jeong Ho Cho Yonsei University
Dongzhi Chi
Dongzhi Chi Agency for Science, Technology and Research
Navab Singh
Navab Singh Agency for Science, Technology and Research
Byoung Hun Lee
Byoung Hun Lee Pohang University of Science and Technology
Ming-Fu Li
Ming-Fu Li Fudan University
Byung Jin Cho
Byung Jin Cho Chungbuk National University
Chunxiang Zhu
Chunxiang Zhu National University of Singapore
Won Jong Yoo
Won Jong Yoo Sungkyunkwan University
Albert Chin
Albert Chin National Yang Ming Chiao Tung University

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