World's Best Scientists 2026 revealed!

D-Index & Metrics

Electronics and Electrical Engineering

D-Index
60
Citations
12702
World Ranking
1652
National Ranking
37

Materials Science

D-Index
61
Citations
12895
World Ranking
6815
National Ranking
283

Sungjoo Lee publication distribution in Electronics and Electrical Engineering in 2026

The chart shows the distribution of publications by all Research.com ranked scientists in the field of Electronics and Electrical Engineering in 2026. The highlighted bar marks where Sungjoo Lee sits on this spectrum.

34–53 publications: 24 scientists 54–73 publications: 52 scientists 74–93 publications: 114 scientists 94–113 publications: 203 scientists 114–133 publications: 269 scientists 134–153 publications: 355 scientists 154–173 publications: 403 scientists 174–193 publications: 446 scientists 194–213 publications: 430 scientists 214–233 publications: 431 scientists 234–253 publications: 399 scientists 254–273 publications: 366 scientists 274–293 publications: 335 scientists 294–313 publications: 300 scientists 314–333 publications: 276 scientists 334–353 publications: 250 scientists 354–373 publications: 214 scientists 374–393 publications: 187 scientists 394–413 publications: 152 scientists 414–433 publications: 169 scientists 434–453 publications: 147 scientists 454–473 publications: 111 scientists 474–493 publications: 117 scientists 494–513 publications: 103 scientists 514–533 publications: 99 scientists 534–553 publications: 92 scientists 554–573 publications: 75 scientists 574–593 publications: 58 scientists 594–613 publications: 69 scientists 614–633 publications: 50 scientists 634–653 publications: 62 scientists 654–673 publications: 54 scientists 674–693 publications: 44 scientists 694–713 publications: 37 scientists 714–733 publications: 28 scientists 734–753 publications: 26 scientists 754–773 publications: 26 scientists 774–793 publications: 19 scientists 794–813 publications: 23 scientists 814–833 publications: 20 scientists 834–853 publications: 16 scientists 854–873 publications: 20 scientists 874–893 publications: 11 scientists 894–913 publications: 11 scientists 914–933 publications: 16 scientists 934–953 publications: 13 scientists 954–973 publications: 10 scientists 974–993 publications: 11 scientists 994–1,013 publications: 9 scientists 1,014–1,033 publications: 9 scientists 1,034–1,053 publications: 10 scientists 1,054–1,064 publications: 6 scientists 1,065+ publications: 99 scientists
34 publications 1,065+

This scientist: 230 publications — 39th percentile

39% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 1,065 publications or more.

Sungjoo Lee D-index placement in Electronics and Electrical Engineering in 2026

The chart shows the D-index (discipline H-index) distribution of Electronics and Electrical Engineering scientists ranked by Research.com in 2026. The highlighted bar marks where Sungjoo Lee sits on this spectrum.

30 D-Index: 178 scientists 31 D-Index: 257 scientists 32 D-Index: 263 scientists 33 D-Index: 263 scientists 34 D-Index: 244 scientists 35 D-Index: 236 scientists 36 D-Index: 211 scientists 37 D-Index: 220 scientists 38 D-Index: 214 scientists 39 D-Index: 214 scientists 40 D-Index: 205 scientists 41 D-Index: 187 scientists 42 D-Index: 194 scientists 43 D-Index: 201 scientists 44 D-Index: 155 scientists 45 D-Index: 189 scientists 46 D-Index: 148 scientists 47 D-Index: 160 scientists 48 D-Index: 134 scientists 49 D-Index: 130 scientists 50 D-Index: 141 scientists 51 D-Index: 156 scientists 52 D-Index: 108 scientists 53 D-Index: 130 scientists 54 D-Index: 112 scientists 55 D-Index: 97 scientists 56 D-Index: 111 scientists 57 D-Index: 102 scientists 58 D-Index: 108 scientists 59 D-Index: 120 scientists 60 D-Index: 103 scientists 61 D-Index: 93 scientists 62 D-Index: 92 scientists 63 D-Index: 74 scientists 64 D-Index: 77 scientists 65 D-Index: 73 scientists 66 D-Index: 64 scientists 67 D-Index: 69 scientists 68 D-Index: 60 scientists 69 D-Index: 39 scientists 70 D-Index: 57 scientists 71 D-Index: 59 scientists 72 D-Index: 46 scientists 73 D-Index: 49 scientists 74 D-Index: 38 scientists 75 D-Index: 35 scientists 76 D-Index: 32 scientists 77 D-Index: 35 scientists 78 D-Index: 31 scientists 79 D-Index: 22 scientists 80 D-Index: 34 scientists 81 D-Index: 31 scientists 82 D-Index: 34 scientists 83 D-Index: 23 scientists 84 D-Index: 18 scientists 85 D-Index: 30 scientists 86 D-Index: 19 scientists 87 D-Index: 19 scientists 88 D-Index: 20 scientists 89 D-Index: 8 scientists 90 D-Index: 17 scientists 91 D-Index: 7 scientists 92 D-Index: 14 scientists 93 D-Index: 9 scientists 94 D-Index: 15 scientists 95 D-Index: 10 scientists 96 D-Index: 12 scientists 97 D-Index: 10 scientists 98 D-Index: 10 scientists 99 D-Index: 12 scientists 100 D-Index: 16 scientists 101 D-Index: 5 scientists 102 D-Index: 7 scientists 103 D-Index: 7 scientists 104 D-Index: 8 scientists 105 D-Index: 9 scientists 106 D-Index: 13 scientists 107 D-Index: 4 scientists 108 D-Index: 5 scientists 109 D-Index: 10 scientists 110 D-Index: 8 scientists 111+ D-Index: 96 scientists
30 D-Index 111+

This scientist: 60 D-Index — 77th percentile

77% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 111 D-Index or more.

Overview

Sungjoo Lee is affiliated with Sungkyunkwan University in South Korea and has contributed extensively to research within engineering and materials science. Their work predominantly focuses on electrical and electronic engineering as well as materials chemistry, engaging deeply with subfields such as polymers and plastics, biomedical engineering, and cellular and molecular neuroscience.

Their research topics cover a broad spectrum including advanced memory and neural computing, ferroelectric and negative capacitance devices, and 2D materials and applications. Further specialization is evident in areas related to MXene and MAX phase materials, perovskite materials and applications, conducting polymers, and semiconductor materials and devices.

Frequent co-authors in their publications include Sungpyo Baek, Haeju Choi, Jingjie Niu, Yoonmyung Lee, and Jeong Ho Cho.

Several publication venues frequently feature their work. These include:

  • Advanced Materials
  • ACS Nano
  • ACS Applied Materials & Interfaces
  • EcoMat
  • Advanced Science

Representative recent papers provide insight into the nature of their research:

  • Modulation of the Electronic Properties of MXene (Ti3C2Tx) via Surface-Covalent Functionalization with Diazonium, 2021, ACS Nano
  • 2D MXene-TiO2 Core-Shell Nanosheets as a Data-Storage Medium in Memory Devices, 2020, Advanced Materials
  • Two-Dimensional CIPS-InSe van der Waal Heterostructure Ferroelectric Field Effect Transistor for Nonvolatile Memory Applications, 2022, ACS Nano
  • Ferroelectric Field-Effect-Transistor Integrated with Ferroelectrics Heterostructure, 2022, Advanced Science
  • A multiple negative differential resistance heterojunction device and its circuit application to ternary static random access memory, 2020, Nanoscale Horizons

Best Publications

  • Layer-controlled CVD growth of large-area two-dimensional MoS2 films

    Jaeho Jeon;Sung Kyu Jang;Su Min Jeon;Gwangwe Yoo

  • Phosphorene/rhenium disulfide heterojunction-based negative differential resistance device for multi-valued logic.

    Jaewoo Shim;Seyong Oh;Dong-Ho Kang;Seo-Hyeon Jo

  • N-type Schottky barrier source/drain MOSFET using ytterbium silicide

    Shiyang Zhu;Jingde Chen;M.-F. Li;M.-F. Li;S.J. Lee

  • Correction: Surface group modification and carrier transport properties of layered transition metal carbides (Ti2CT(x), T: -OH, -F and -O).

    Shen Lai;Jaeho Jeon;Sung Kyu Jang;Jiao Xu

  • Dye-sensitized MoS2 photodetector with enhanced spectral photoresponse.

    Seong Hun Yu;Youngbin Lee;Sung Kyu Jang;Jinyeong Kang

  • Vertical Si-Nanowire $n$ -Type Tunneling FETs With Low Subthreshold Swing ( $\leq \hbox{50}\ \hbox{mV/decade}$ ) at Room Temperature

    R Gandhi;Zhixian Chen;N Singh;K Banerjee

  • A Platform for Large‐Scale Graphene Electronics – CVD Growth of Single‐Layer Graphene on CVD‐Grown Hexagonal Boron Nitride

    Min Wang;Sung Kyu Jang;Won Jun Jang;Minwoo Kim

  • High-Performance Transition Metal Dichalcogenide Photodetectors Enhanced by Self-Assembled Monolayer Doping

    Dong Ho Kang;Myung Soo Kim;Jaewoo Shim;Jeaho Jeon

  • Large-Area MXene Electrode Array for Flexible Electronics.

    Benzheng Lyu;Minje Kim;Hongyue Jing;Joohoon Kang

  • Ge-Photodetectors for Si-Based Optoelectronic Integration

    Jian Wang;Sungjoo Lee

  • An Ultrahigh-Performance Photodetector based on a Perovskite-Transition-Metal-Dichalcogenide Hybrid Structure.

    Dong-Ho Kang;Seong Ryul Pae;Jaewoo Shim;Gwangwe Yoo

  • MXene Electrode for the Integration of WSe2 and MoS2 Field Effect Transistors

    Jiao Xu;Jaewoo Shim;Jin-Hong Park;Sungjoo Lee

  • High-Performance 2D Rhenium Disulfide (ReS2) Transistors and Photodetectors by Oxygen Plasma Treatment

    Jaewoo Shim;Aely Oh;Dong-Ho Kang;Seyong Oh

  • CMOS-Compatible Vertical-Silicon-Nanowire Gate-All-Around p-Type Tunneling FETs With $\leq 50$ -mV/decade Subthreshold Swing

    R. Gandhi;Zhixian Chen;N. Singh;K. Banerjee

  • Plasma-Treated Thickness-Controlled Two-Dimensional Black Phosphorus and Its Electronic Transport Properties.

    Jingyuan Jia;Sung Kyu Jang;Shen Lai;Jiao Xu

  • Ultrasensitive MoS2 photodetector by serial nano-bridge multi-heterojunction.

    Ki Seok Kim;You Jin Ji;Ki Hyun Kim;Seunghyuk Choi

  • Epitaxial Synthesis of Molybdenum Carbide and Formation of a Mo2C/MoS2 Hybrid Structure via Chemical Conversion of Molybdenum Disulfide

    Jaeho Jeon;Yereum Park;Seunghyuk Choi;Jinhee Lee

  • Modulation of the Electronic Properties of MXene (Ti3C2Tx) via Surface-Covalent Functionalization with Diazonium.

    Hongyue Jing;Hyeonwoo Yeo;Benzheng Lyu;Junga Ryou

  • Controllable nondegenerate p-type doping of tungsten diselenide by octadecyltrichlorosilane.

    Dong-Ho Kang;Jaewoo Shim;Sung Kyu Jang;Jeaho Jeon

  • Synthesis and Characterization of Hexagonal Boron Nitride as a Gate Dielectric

    Sung Kyu Jang;Jiyoun Youn;Young Jae Song;Sungjoo Lee

  • A High-Performance WSe2 /h-BN Photodetector using a Triphenylphosphine (PPh3 )-Based n-Doping Technique.

    Seo Hyeon Jo;Dong Ho Kang;Jaewoo Shim;Jaeho Jeon

Frequent Co-Authors

Dim-Lee Kwong
Dim-Lee Kwong National University of Singapore
Jeong Ho Cho
Jeong Ho Cho Yonsei University
Dongzhi Chi
Dongzhi Chi Agency for Science, Technology and Research
Navab Singh
Navab Singh Agency for Science, Technology and Research
Byoung Hun Lee
Byoung Hun Lee Pohang University of Science and Technology
Ming-Fu Li
Ming-Fu Li Fudan University
Byung Jin Cho
Byung Jin Cho Chungbuk National University
Chunxiang Zhu
Chunxiang Zhu National University of Singapore
Won Jong Yoo
Won Jong Yoo Sungkyunkwan University
Albert Chin
Albert Chin National Yang Ming Chiao Tung University

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