Won Jong Yoo mostly deals with Optoelectronics, Nanotechnology, Graphene, Field-effect transistor and Transistor. His Optoelectronics research incorporates themes from Electrical engineering and Ambipolar diffusion. His Nanotechnology research includes elements of Metallic bonding, Light emission and Molybdenum disulfide.
His Graphene research is multidisciplinary, incorporating elements of Scientific method, Inductively coupled plasma, Robustness and Plasma density. Won Jong Yoo studied Field-effect transistor and Electric field that intersect with Direct and indirect band gaps and Dark current. Other disciplines of study, such as Stacking and Trapping, are mixed together with his Transistor studies.
His primary scientific interests are in Optoelectronics, Nanotechnology, Analytical chemistry, Graphene and Dielectric. The various areas that Won Jong Yoo examines in his Optoelectronics study include Layer, Electrical engineering and Field-effect transistor. His studies examine the connections between Nanotechnology and genetics, as well as such issues in Transistor, with regards to Electron mobility.
His study focuses on the intersection of Analytical chemistry and fields such as Etching with connections in the field of Silicon. His Graphene research is multidisciplinary, relying on both Photodetector and Heterojunction. Won Jong Yoo interconnects Annealing, Composite material, Gate dielectric and Leakage in the investigation of issues within Dielectric.
Won Jong Yoo mainly investigates Optoelectronics, Tungsten diselenide, Field-effect transistor, Graphene and Doping. His research integrates issues of Monolayer and Contact resistance in his study of Optoelectronics. While the research belongs to areas of Monolayer, Won Jong Yoo spends his time largely on the problem of Layer, intersecting his research to questions surrounding Transistor and Electronic band structure.
Won Jong Yoo has included themes like Multi layer, Electrostatic induction, Phase, Logic gate and Molybdenum telluride in his Field-effect transistor study. Won Jong Yoo integrates Graphene and Van der waals heterostructures in his research. His work in Doping tackles topics such as Molybdenum disulfide which are related to areas like High-κ dielectric, Subthreshold slope, Leakage, Threshold voltage and Field effect.
His primary areas of study are Optoelectronics, Electron mobility, Graphene, Heterojunction and Composite material. His research in Optoelectronics intersects with topics in Field-effect transistor, Monolayer, Fermi level and Electronics. His Field-effect transistor study integrates concerns from other disciplines, such as Threshold voltage, High-κ dielectric, Molybdenum disulfide and Leakage.
His Graphene course of study focuses on Chemical vapor deposition and Bilayer graphene, Analytical chemistry, Hydrogen, FOIL method and Crystallite. In his study, Won Jong Yoo carries out multidisciplinary Heterojunction and Stacking research. His Composite material study combines topics in areas such as Dielectric dispersion and Impedance analyzer, Dielectric.
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Flexible and Transparent MoS2 Field-Effect Transistors on Hexagonal Boron Nitride-Graphene Heterostructures
Gwan Hyoung Lee;Young Jun Yu;Young Jun Yu;Xu Cui;Nicholas Petrone.
ACS Nano (2013)
High-Performance Perovskite–Graphene Hybrid Photodetector
Youngbin Lee;Jeong Kwon;Euyheon Hwang;Chang Ho Ra.
Advanced Materials (2015)
Controlled charge trapping by molybdenum disulphide and graphene in ultrathin heterostructured memory devices
Min Sup Choi;Gwan Hyoung Lee;Gwan Hyoung Lee;Young Jun Yu;Young Jun Yu;Dae Yeong Lee.
Nature Communications (2013)
Fermi Level Pinning at Electrical Metal Contacts of Monolayer Molybdenum Dichalcogenides.
Changsik Kim;Inyong Moon;Daeyeong Lee;Min Sup Choi.
ACS Nano (2017)
Highly stretchable piezoelectric-pyroelectric hybrid nanogenerator.
Ju Hyuck Lee;Keun Young Lee;Manoj Kumar Gupta;Tae Yun Kim.
Advanced Materials (2014)
Lateral MoS2 p-n junction formed by chemical doping for use in high-performance optoelectronics.
Min Sup Choi;Deshun Qu;Daeyeong Lee;Xiaochi Liu.
ACS Nano (2014)
Ultimate thin vertical p–n junction composed of two-dimensional layered molybdenum disulfide
Hua-Min Li;Daeyeong Lee;Deshun Qu;Xiaochi Liu.
Nature Communications (2015)
P-Type Polar Transition of Chemically Doped Multilayer MoS2 Transistor.
Xiaochi Liu;Deshun Qu;Jungjin Ryu;Faisal Ahmed.
Advanced Materials (2016)
Nonvolatile flash memory device using Ge nanocrystals embedded in HfAlO high-/spl kappa/tunneling and control oxides: Device fabrication and electrical performance
Jing Hao Chen;Ying Qian Wang;Won Jong Yoo;Yee-Chia Yeo.
IEEE Transactions on Electron Devices (2004)
Modulation of Quantum Tunneling via a Vertical Two-Dimensional Black Phosphorus and Molybdenum Disulfide p-n Junction.
Xiaochi Liu;Deshun Qu;Hua Min Li;Inyong Moon.
ACS Nano (2017)
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