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Won Jong Yoo

D-Index & Metrics

Discipline name D-Index World Ranking Current World Ranking National Ranking Current National Ranking Publications Citations
Electronics and Electrical Engineering 57 1956 1876 49 49 258 13349
Materials Science 59 7306 7067 303 300 277 14097

Won Jong Yoo publications per year

The chart shows the history of publications by Won Jong Yoo between 1990 and 2025, highlighting the no. of papers published in each year and offering an overview of the publication velocity of this scholar. Won Jong Yoo published across 36 years, from 1990 to 2025, averaging 8.5 papers a year. Output peaked at 20 publications in 2005. 28 of the 307 publications appeared in the last two years.

No. of publications
5 10 15 20
Bar chart. Horizontal axis: year, 1990 to 2025. Vertical axis: number of publications, 0 to 20. Peak 20 publications in 2005. 1990: 1 publication 1991: 0 publications 1992: 2 publications 1993: 2 publications 1994: 2 publications 1995: 0 publications 1996: 3 publications 1997: 1 publication 1998: 3 publications 1999: 3 publications 2000: 1 publication 2001: 5 publications 2002: 5 publications 2003: 5 publications 2004: 15 publications 2005: 20 publications 2006: 16 publications 2007: 10 publications 2008: 10 publications 2009: 10 publications 2010: 8 publications 2011: 12 publications 2012: 4 publications 2013: 13 publications 2014: 9 publications 2015: 13 publications 2016: 13 publications 2017: 15 publications 2018: 14 publications 2019: 11 publications 2020: 15 publications 2021: 17 publications 2022: 14 publications 2023: 7 publications 2024: 18 publications 2025: 10 publications
1990 2025

307 publications in total across all disciplines

View publications per year as a table
Won Jong Yoo: publications per year, 1990 to 2025
Year Publications
1990 1
1991 0
1992 2
1993 2
1994 2
1995 0
1996 3
1997 1
1998 3
1999 3
2000 1
2001 5
2002 5
2003 5
2004 15
2005 20
2006 16
2007 10
2008 10
2009 10
2010 8
2011 12
2012 4
2013 13
2014 9
2015 13
2016 13
2017 15
2018 14
2019 11
2020 15
2021 17
2022 14
2023 7
2024 18
2025 10
Total 307
Download as CSV

Won Jong Yoo publication distribution in Electronics and Electrical Engineering in 2026

The chart shows the distribution of publications by all Research.com ranked scientists in the field of Electronics and Electrical Engineering in 2026. The highlighted bar marks where Won Jong Yoo sits on this spectrum.

No. of scientists
100 200 300 400
Bar chart with 53 bars. Horizontal axis: publications, 34–53 to 1,065+. Vertical axis: number of scientists, 0 to 445. Most scientists, 445, have 174–193 publications. The last bar groups every scientist with 1,065 publications or more. The highlighted bar, 254–273 publications, is where this scientist sits. 34–53 publications: 24 scientists 54–73 publications: 52 scientists 74–93 publications: 114 scientists 94–113 publications: 203 scientists 114–133 publications: 269 scientists 134–153 publications: 355 scientists 154–173 publications: 403 scientists 174–193 publications: 445 scientists 194–213 publications: 430 scientists 214–233 publications: 431 scientists 234–253 publications: 399 scientists 254–273 publications: 366 scientists 274–293 publications: 335 scientists 294–313 publications: 300 scientists 314–333 publications: 276 scientists 334–353 publications: 250 scientists 354–373 publications: 214 scientists 374–393 publications: 187 scientists 394–413 publications: 152 scientists 414–433 publications: 169 scientists 434–453 publications: 147 scientists 454–473 publications: 111 scientists 474–493 publications: 117 scientists 494–513 publications: 103 scientists 514–533 publications: 99 scientists 534–553 publications: 92 scientists 554–573 publications: 75 scientists 574–593 publications: 58 scientists 594–613 publications: 69 scientists 614–633 publications: 50 scientists 634–653 publications: 62 scientists 654–673 publications: 54 scientists 674–693 publications: 44 scientists 694–713 publications: 37 scientists 714–733 publications: 28 scientists 734–753 publications: 26 scientists 754–773 publications: 26 scientists 774–793 publications: 19 scientists 794–813 publications: 23 scientists 814–833 publications: 20 scientists 834–853 publications: 16 scientists 854–873 publications: 20 scientists 874–893 publications: 11 scientists 894–913 publications: 11 scientists 914–933 publications: 16 scientists 934–953 publications: 13 scientists 954–973 publications: 10 scientists 974–993 publications: 11 scientists 994–1,013 publications: 9 scientists 1,014–1,033 publications: 9 scientists 1,034–1,053 publications: 10 scientists 1,054–1,064 publications: 6 scientists 1,065+ publications: 99 scientists
34–53 publications 1,065+

This scientist: 258 publications — 47th percentile

47% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 1,065 publications or more.

View publications distribution as a table
Number of Electronics and Electrical Engineering scientists by publication count, Research.com 2026 ranking edition. Based on 6,875 ranked scientists.
Publications Scientists This scientist
34–53 24
54–73 52
74–93 114
94–113 203
114–133 269
134–153 355
154–173 403
174–193 445
194–213 430
214–233 431
234–253 399
254–273 366 258
274–293 335
294–313 300
314–333 276
334–353 250
354–373 214
374–393 187
394–413 152
414–433 169
434–453 147
454–473 111
474–493 117
494–513 103
514–533 99
534–553 92
554–573 75
574–593 58
594–613 69
614–633 50
634–653 62
654–673 54
674–693 44
694–713 37
714–733 28
734–753 26
754–773 26
774–793 19
794–813 23
814–833 20
834–853 16
854–873 20
874–893 11
894–913 11
914–933 16
934–953 13
954–973 10
974–993 11
994–1,013 9
1,014–1,033 9
1,034–1,053 10
1,054–1,064 6
1,065+ 99
Download as CSV

Won Jong Yoo D-index placement in Electronics and Electrical Engineering in 2026

The chart shows the D-index (discipline H-index) distribution of Electronics and Electrical Engineering scientists ranked by Research.com in 2026. The highlighted bar marks where Won Jong Yoo sits on this spectrum.

No. of scientists
50 100 150 200 250
Bar chart with 82 bars. Horizontal axis: D-Index, 30 to 111+. Vertical axis: number of scientists, 0 to 263. Most scientists, 263, have 32 D-Index. The last bar groups every scientist with 111 D-Index or more. The highlighted bar, 57 D-Index, is where this scientist sits. 30 D-Index: 178 scientists 31 D-Index: 257 scientists 32 D-Index: 263 scientists 33 D-Index: 262 scientists 34 D-Index: 244 scientists 35 D-Index: 236 scientists 36 D-Index: 211 scientists 37 D-Index: 220 scientists 38 D-Index: 214 scientists 39 D-Index: 214 scientists 40 D-Index: 205 scientists 41 D-Index: 187 scientists 42 D-Index: 194 scientists 43 D-Index: 201 scientists 44 D-Index: 155 scientists 45 D-Index: 189 scientists 46 D-Index: 148 scientists 47 D-Index: 160 scientists 48 D-Index: 134 scientists 49 D-Index: 130 scientists 50 D-Index: 141 scientists 51 D-Index: 156 scientists 52 D-Index: 108 scientists 53 D-Index: 130 scientists 54 D-Index: 112 scientists 55 D-Index: 97 scientists 56 D-Index: 111 scientists 57 D-Index: 102 scientists 58 D-Index: 108 scientists 59 D-Index: 120 scientists 60 D-Index: 103 scientists 61 D-Index: 93 scientists 62 D-Index: 92 scientists 63 D-Index: 74 scientists 64 D-Index: 77 scientists 65 D-Index: 73 scientists 66 D-Index: 64 scientists 67 D-Index: 69 scientists 68 D-Index: 60 scientists 69 D-Index: 39 scientists 70 D-Index: 57 scientists 71 D-Index: 59 scientists 72 D-Index: 46 scientists 73 D-Index: 49 scientists 74 D-Index: 38 scientists 75 D-Index: 35 scientists 76 D-Index: 32 scientists 77 D-Index: 35 scientists 78 D-Index: 31 scientists 79 D-Index: 22 scientists 80 D-Index: 34 scientists 81 D-Index: 31 scientists 82 D-Index: 34 scientists 83 D-Index: 23 scientists 84 D-Index: 18 scientists 85 D-Index: 30 scientists 86 D-Index: 19 scientists 87 D-Index: 19 scientists 88 D-Index: 20 scientists 89 D-Index: 8 scientists 90 D-Index: 17 scientists 91 D-Index: 7 scientists 92 D-Index: 14 scientists 93 D-Index: 9 scientists 94 D-Index: 15 scientists 95 D-Index: 10 scientists 96 D-Index: 12 scientists 97 D-Index: 10 scientists 98 D-Index: 10 scientists 99 D-Index: 12 scientists 100 D-Index: 16 scientists 101 D-Index: 5 scientists 102 D-Index: 7 scientists 103 D-Index: 7 scientists 104 D-Index: 8 scientists 105 D-Index: 9 scientists 106 D-Index: 13 scientists 107 D-Index: 4 scientists 108 D-Index: 5 scientists 109 D-Index: 10 scientists 110 D-Index: 8 scientists 111+ D-Index: 96 scientists
30 D-Index 111+

This scientist: 57 D-Index — 72nd percentile

72% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 111 D-Index or more.

View D-Index distribution as a table
Number of Electronics and Electrical Engineering scientists by D-index, Research.com 2026 ranking edition. Based on 6,875 ranked scientists.
D-Index Scientists This scientist
30 178
31 257
32 263
33 262
34 244
35 236
36 211
37 220
38 214
39 214
40 205
41 187
42 194
43 201
44 155
45 189
46 148
47 160
48 134
49 130
50 141
51 156
52 108
53 130
54 112
55 97
56 111
57 102 57
58 108
59 120
60 103
61 93
62 92
63 74
64 77
65 73
66 64
67 69
68 60
69 39
70 57
71 59
72 46
73 49
74 38
75 35
76 32
77 35
78 31
79 22
80 34
81 31
82 34
83 23
84 18
85 30
86 19
87 19
88 20
89 8
90 17
91 7
92 14
93 9
94 15
95 10
96 12
97 10
98 10
99 12
100 16
101 5
102 7
103 7
104 8
105 9
106 13
107 4
108 5
109 10
110 8
111+ 96
Download as CSV

Overview

Won Jong Yoo is a researcher affiliated with Sungkyunkwan University in South Korea, specializing in the fields of Materials Science and Engineering. Their scholarly contributions primarily focus on 2D materials and their applications, with a significant emphasis on graphene research and related advanced materials.

The main fields of study for Won Jong Yoo include:

  • Materials Science
  • Engineering

Their subfields of study reflect a concentration on the chemistry and engineering aspects of materials:

  • Materials Chemistry
  • Electrical and Electronic Engineering
  • Atomic and Molecular Physics, and Optics
  • Biomedical Engineering
  • Polymers and Plastics

Won Jong Yoo's work covers a range of advanced topics, notably:

  • 2D Materials and Applications
  • Graphene research and applications
  • MXene and MAX Phase Materials
  • Ferroelectric and Negative Capacitance Devices
  • Perovskite Materials and Applications
  • Advanced Memory and Neural Computing
  • Quantum and electron transport phenomena

Their research has been published in several frequent publication venues, highlighting a focus on applied materials and nanoscale electronic devices:

  • ACS Applied Materials & Interfaces
  • Advanced Electronic Materials
  • Nature Electronics
  • ACS Nano
  • Advanced Materials

Some of the recent papers authored or co-authored by Won Jong Yoo include:

  • "Fermi Level Pinning Dependent 2D Semiconductor Devices: Challenges and Prospects," 2021, Advanced Materials
  • "Electrical characterization of 2D materials-based field-effect transistors," 2020, 2D Materials
  • "Large-area single-crystal AB-bilayer and ABA-trilayer graphene grown on a Cu/Ni(111) foil," 2020, Nature Nanotechnology
  • "High carrier mobility in graphene doped using a monolayer of tungsten oxyselenide," 2021, Nature Electronics
  • "Gate-Modulated Ultrasensitive Visible and Near-Infrared Photodetection of Oxygen Plasma-Treated WSe2 Lateral pn-Homojunctions," 2020, ACS Applied Materials & Interfaces

Frequent collaborators in Won Jong Yoo's work include:

  • Tien Dat Ngo
  • Min Sup Choi
  • Fida Ali
  • Nasir Ali
  • Takashi Taniguchi

Best Publications

  • Flexible and Transparent MoS2 Field-Effect Transistors on Hexagonal Boron Nitride-Graphene Heterostructures

    Gwan Hyoung Lee;Young Jun Yu;Young Jun Yu;Xu Cui;Nicholas Petrone

  • Fermi Level Pinning at Electrical Metal Contacts of Monolayer Molybdenum Dichalcogenides.

    Changsik Kim;Inyong Moon;Daeyeong Lee;Min Sup Choi

  • High-Performance Perovskite–Graphene Hybrid Photodetector

    Youngbin Lee;Jeong Kwon;Euyheon Hwang;Chang Ho Ra

  • Controlled charge trapping by molybdenum disulphide and graphene in ultrathin heterostructured memory devices

    Min Sup Choi;Gwan Hyoung Lee;Gwan Hyoung Lee;Young Jun Yu;Young Jun Yu;Dae Yeong Lee

  • Lateral MoS2 p-n junction formed by chemical doping for use in high-performance optoelectronics.

    Min Sup Choi;Deshun Qu;Daeyeong Lee;Xiaochi Liu

  • Highly stretchable piezoelectric-pyroelectric hybrid nanogenerator.

    Ju Hyuck Lee;Keun Young Lee;Manoj Kumar Gupta;Tae Yun Kim

  • Ultimate thin vertical p–n junction composed of two-dimensional layered molybdenum disulfide

    Hua-Min Li;Daeyeong Lee;Deshun Qu;Xiaochi Liu

  • Fermi Level Pinning Dependent 2D Semiconductor Devices: Challenges and Prospects

    Unknown

  • Transferred via contacts as a platform for ideal two-dimensional transistors

    Younghun Jung;Min Sup Choi;Min Sup Choi;Ankur Nipane;Abhinandan Borah

  • Colossal grain growth yields single-crystal metal foils by contact-free annealing.

    Sunghwan Jin;Ming Huang;Youngwoo Kwon;Leining Zhang

  • P-Type Polar Transition of Chemically Doped Multilayer MoS2 Transistor.

    Xiaochi Liu;Deshun Qu;Jungjin Ryu;Faisal Ahmed

  • Carrier-Type Modulation and Mobility Improvement of Thin MoTe2.

    Deshun Qu;Xiaochi Liu;Ming Huang;Changmin Lee

  • Large-area single-crystal AB-bilayer and ABA-trilayer graphene grown on a Cu/Ni(111) foil

    Ming Huang;Pavel V. Bakharev;Zhu-Jun Wang;Zhu-Jun Wang;Mandakini Biswal

  • Electrical characterization of 2D materials-based field-effect transistors

    Sekhar Babu Mitta;Min Sup Choi;Min Sup Choi;Ankur Nipane;Fida Ali

  • Modulation of Quantum Tunneling via a Vertical Two-Dimensional Black Phosphorus and Molybdenum Disulfide p-n Junction.

    Xiaochi Liu;Deshun Qu;Hua Min Li;Inyong Moon

  • A Fermi-Level-Pinning-Free 1D Electrical Contact at the Intrinsic 2D MoS 2 -Metal Junction

    Zheng Yang;Changsik Kim;Kwang Young Lee;Myeongjin Lee

  • Highly Oriented Monolayer Graphene Grown on a Cu/Ni(111) Alloy Foil

    Ming Huang;Mandakini Biswal;Hyo Ju Park;Sunghwan Jin

  • Patterning metal contacts on monolayer MoS2 with vanishing Schottky barriers using thermal nanolithography

    Xiaorui Zheng;Xiaorui Zheng;Annalisa Calò;Annalisa Calò;Edoardo Albisetti;Edoardo Albisetti;Edoardo Albisetti;Xiangyu Liu;Xiangyu Liu

  • Nonvolatile flash memory device using Ge nanocrystals embedded in HfAlO high-/spl kappa/tunneling and control oxides: Device fabrication and electrical performance

    Jing Hao Chen;Ying Qian Wang;Won Jong Yoo;Yee-Chia Yeo

  • Metal-Semiconductor Barrier Modulation for High Photoresponse in Transition Metal Dichalcogenide Field Effect Transistors

    Hua-Min Li;Dae-Yeong Lee;Min Sup Choi;Deshun Qu

  • Schottky-barrier S/D MOSFETs with high-k gate dielectrics and metal-gate electrode

    Shiyang Zhu;H.Y. Yu;S.J. Whang;J.H. Chen

Frequent Co-Authors

James Hone
James Hone Columbia University
Ganesh S. Samudra
Ganesh S. Samudra National University of Singapore
Yee-Chia Yeo
Yee-Chia Yeo National University of Singapore
Albert Chin
Albert Chin National Yang Ming Chiao Tung University
Dim-Lee Kwong
Dim-Lee Kwong National University of Singapore
Byung Jin Cho
Byung Jin Cho Chungbuk National University
Changgu Lee
Changgu Lee Ajou University
Sungjoo Lee
Sungjoo Lee Sungkyunkwan University
Takashi Taniguchi
Takashi Taniguchi National Institute for Materials Science
Rodney S. Ruoff
Rodney S. Ruoff Ulsan National Institute of Science and Technology

External Links

Personal website of Won Jong Yoo Google Scholar page

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Takashi Taniguchi

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David Wei Zhang

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Han Zhang

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Young Hee Lee

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Publications: 28

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