D-Index & Metrics Best Publications

D-Index & Metrics D-index (Discipline H-index) only includes papers and citation values for an examined discipline in contrast to General H-index which accounts for publications across all disciplines.

Discipline name D-index D-index (Discipline H-index) only includes papers and citation values for an examined discipline in contrast to General H-index which accounts for publications across all disciplines. Citations Publications World Ranking National Ranking
Electronics and Electrical Engineering D-index 44 Citations 8,695 210 World Ranking 2242 National Ranking 68
Materials Science D-index 48 Citations 9,337 238 World Ranking 7524 National Ranking 318

Overview

What is he best known for?

The fields of study he is best known for:

  • Quantum mechanics
  • Semiconductor
  • Electron

Won Jong Yoo mostly deals with Optoelectronics, Nanotechnology, Graphene, Field-effect transistor and Transistor. His Optoelectronics research incorporates themes from Electrical engineering and Ambipolar diffusion. His Nanotechnology research includes elements of Metallic bonding, Light emission and Molybdenum disulfide.

His Graphene research is multidisciplinary, incorporating elements of Scientific method, Inductively coupled plasma, Robustness and Plasma density. Won Jong Yoo studied Field-effect transistor and Electric field that intersect with Direct and indirect band gaps and Dark current. Other disciplines of study, such as Stacking and Trapping, are mixed together with his Transistor studies.

His most cited work include:

  • Flexible and Transparent MoS2 Field-Effect Transistors on Hexagonal Boron Nitride-Graphene Heterostructures (692 citations)
  • Flexible and Transparent MoS2 Field-Effect Transistors on Hexagonal Boron Nitride-Graphene Heterostructures (692 citations)
  • High-Performance Perovskite–Graphene Hybrid Photodetector (534 citations)

What are the main themes of his work throughout his whole career to date?

His primary scientific interests are in Optoelectronics, Nanotechnology, Analytical chemistry, Graphene and Dielectric. The various areas that Won Jong Yoo examines in his Optoelectronics study include Layer, Electrical engineering and Field-effect transistor. His studies examine the connections between Nanotechnology and genetics, as well as such issues in Transistor, with regards to Electron mobility.

His study focuses on the intersection of Analytical chemistry and fields such as Etching with connections in the field of Silicon. His Graphene research is multidisciplinary, relying on both Photodetector and Heterojunction. Won Jong Yoo interconnects Annealing, Composite material, Gate dielectric and Leakage in the investigation of issues within Dielectric.

He most often published in these fields:

  • Optoelectronics (61.20%)
  • Nanotechnology (18.80%)
  • Analytical chemistry (17.20%)

What were the highlights of his more recent work (between 2017-2021)?

  • Optoelectronics (61.20%)
  • Tungsten diselenide (3.20%)
  • Field-effect transistor (12.80%)

In recent papers he was focusing on the following fields of study:

Won Jong Yoo mainly investigates Optoelectronics, Tungsten diselenide, Field-effect transistor, Graphene and Doping. His research integrates issues of Monolayer and Contact resistance in his study of Optoelectronics. While the research belongs to areas of Monolayer, Won Jong Yoo spends his time largely on the problem of Layer, intersecting his research to questions surrounding Transistor and Electronic band structure.

Won Jong Yoo has included themes like Multi layer, Electrostatic induction, Phase, Logic gate and Molybdenum telluride in his Field-effect transistor study. Won Jong Yoo integrates Graphene and Van der waals heterostructures in his research. His work in Doping tackles topics such as Molybdenum disulfide which are related to areas like High-κ dielectric, Subthreshold slope, Leakage, Threshold voltage and Field effect.

Between 2017 and 2021, his most popular works were:

  • Colossal grain growth yields single-crystal metal foils by contact-free annealing. (59 citations)
  • Highly Oriented Monolayer Graphene Grown on a Cu/Ni(111) Alloy Foil (59 citations)
  • Patterning metal contacts on monolayer MoS2 with vanishing Schottky barriers using thermal nanolithography (49 citations)

In his most recent research, the most cited papers focused on:

  • Quantum mechanics
  • Semiconductor
  • Electron

His primary areas of study are Optoelectronics, Electron mobility, Graphene, Heterojunction and Composite material. His research in Optoelectronics intersects with topics in Field-effect transistor, Monolayer, Fermi level and Electronics. His Field-effect transistor study integrates concerns from other disciplines, such as Threshold voltage, High-κ dielectric, Molybdenum disulfide and Leakage.

His Graphene course of study focuses on Chemical vapor deposition and Bilayer graphene, Analytical chemistry, Hydrogen, FOIL method and Crystallite. In his study, Won Jong Yoo carries out multidisciplinary Heterojunction and Stacking research. His Composite material study combines topics in areas such as Dielectric dispersion and Impedance analyzer, Dielectric.

This overview was generated by a machine learning system which analysed the scientist’s body of work. If you have any feedback, you can contact us here.

Best Publications

Flexible and Transparent MoS2 Field-Effect Transistors on Hexagonal Boron Nitride-Graphene Heterostructures

Gwan Hyoung Lee;Young Jun Yu;Young Jun Yu;Xu Cui;Nicholas Petrone.
ACS Nano (2013)

1055 Citations

High-Performance Perovskite–Graphene Hybrid Photodetector

Youngbin Lee;Jeong Kwon;Euyheon Hwang;Chang Ho Ra.
Advanced Materials (2015)

757 Citations

Controlled charge trapping by molybdenum disulphide and graphene in ultrathin heterostructured memory devices

Min Sup Choi;Gwan Hyoung Lee;Gwan Hyoung Lee;Young Jun Yu;Young Jun Yu;Dae Yeong Lee.
Nature Communications (2013)

648 Citations

Fermi Level Pinning at Electrical Metal Contacts of Monolayer Molybdenum Dichalcogenides.

Changsik Kim;Inyong Moon;Daeyeong Lee;Min Sup Choi.
ACS Nano (2017)

490 Citations

Highly stretchable piezoelectric-pyroelectric hybrid nanogenerator.

Ju Hyuck Lee;Keun Young Lee;Manoj Kumar Gupta;Tae Yun Kim.
Advanced Materials (2014)

488 Citations

Lateral MoS2 p-n junction formed by chemical doping for use in high-performance optoelectronics.

Min Sup Choi;Deshun Qu;Daeyeong Lee;Xiaochi Liu.
ACS Nano (2014)

480 Citations

Ultimate thin vertical p–n junction composed of two-dimensional layered molybdenum disulfide

Hua-Min Li;Daeyeong Lee;Deshun Qu;Xiaochi Liu.
Nature Communications (2015)

278 Citations

P-Type Polar Transition of Chemically Doped Multilayer MoS2 Transistor.

Xiaochi Liu;Deshun Qu;Jungjin Ryu;Faisal Ahmed.
Advanced Materials (2016)

169 Citations

Nonvolatile flash memory device using Ge nanocrystals embedded in HfAlO high-/spl kappa/tunneling and control oxides: Device fabrication and electrical performance

Jing Hao Chen;Ying Qian Wang;Won Jong Yoo;Yee-Chia Yeo.
IEEE Transactions on Electron Devices (2004)

163 Citations

Modulation of Quantum Tunneling via a Vertical Two-Dimensional Black Phosphorus and Molybdenum Disulfide p-n Junction.

Xiaochi Liu;Deshun Qu;Hua Min Li;Inyong Moon.
ACS Nano (2017)

138 Citations

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