Friedrich Schäffler

Overview

Best Publications

• High-mobility Si and Ge structures

  Friedrich Schäffler

  1024
  Citations

• Fatty acid salts as stabilizers in size- and shape-controlled nanocrystal synthesis: the case of inverse spinel iron oxide.

  Maksym V. Kovalenko;Maryna I. Bodnarchuk;Rainer T. Lechner;Günter Hesser

  488
  Citations

• Stabilization of the nanomorphology of polymer–fullerene “bulk heterojunction” blends using a novel polymerizable fullerene derivative

  Martin Drees;Harald Hoppe;Christoph Winder;Helmut Neugebauer

  271
  Citations

• A germanium hole spin qubit.

  Hannes Watzinger;Josip Kukučka;Lada Vukušić;Fei Gao

  265
  Citations

• High-electron-mobility Si/SiGe heterostructures: influence of the relaxed SiGe buffer layer

  F Schaffler;D Tobben;H J Herzog;G Abstreiter

  252
  Citations

• Colloidal HgTe nanocrystals with widely tunable narrow band gap energies : From telecommunications to molecular vibrations

  Maksym V. Kovalenko;Erich Kaufmann;Dietmar Pachinger;Jürgen Roither

  238
  Citations

• Two-dimensional periodic positioning of self-assembled Ge islands on prepatterned Si (001) substrates

  Zhenyang Zhong;A. Halilovic;T. Fromherz;F. Schäffler

  159
  Citations

• Ge hole spin qubit

  Hannes Watzinger;Josip Kukučka;Lada Vukušić;Fei Gao

  158
  Citations

• Type-II band alignment in Si/ Si 1 − x Ge x quantum wells from photoluminescence line shifts due to optically induced band-bending effects: Experiment and theory

  T. Baier;U. Mantz;K. Thonke;R. Sauer

  146
  Citations

• p-type Ge-channel MODFETs with high transconductance grown on Si substrates

  U. Konig;F. Schaffler

  135
  Citations

• Centrosymmetric PbTe∕CdTe quantum dots coherently embedded by epitaxial precipitation

  W. Heiss;H. Groiss;E. Kaufmann;G. Hesser

  132
  Citations

• LATTICE PARAMETER IN SI1-YCY EPILAYERS: DEVIATION FROM VEGARD'S RULE

  M. Berti;D. De Salvador;A. V. Drigo;F. Romanato

  129
  Citations

• Delayed plastic relaxation on patterned Si substrates: Coherent SiGe pyramids with dominant {111} facets

  Zhenyang Zhong;W. Schwinger;F. Schäffler;G. Bauer

  128
  Citations

• Positioning of self-assembled Ge islands on stripe-patterned Si(001) substrates

  Zhenyang Zhong;A. Halilovic;M. Mühlberger;F. Schäffler

  127
  Citations

• KINETIC GROWTH INSTABILITIES ON VICINAL SI(001) SURFACES

  C. Schelling;G. Springholz;F. Schäffler

  121
  Citations

• Lasing from Glassy Ge Quantum Dots in Crystalline Si

  Martyna Grydlik;Florian Hackl;Heiko Groiss;Martin Glaser

  120
  Citations

• Key role of the wetting layer in revealing the hidden path of Ge/Si(001) Stranski-Krastanow growth onset

  Moritz Brehm;Francesco Montalenti;Martyna Grydlik;Guglielmo Vastola

  119
  Citations

• Enhancement mode n-channel Si/SiGe MODFET with high intrinsic transconductance

  U. Konig;A.J. Boers;F. Schaffler;E. Kasper

  117
  Citations

• Spin manipulation of free two-dimensional electrons in Si/SiGe quantum wells.

  A. M. Tyryshkin;Stephen Aplin Lyon;W. Jantsch;F. Schäffler

  117
  Citations

• Hybrid solar cells based on inorganic nanoclusters and conjugated polymers

  E. Arici;H. Hoppe;F. Schäffler;D. Meissner

  115
  Citations

• On the microscopic origin of the kinetic step bunching instability on vicinal Si(0 0 1)

  J Mysliveček;C Schelling;F Schäffler;G Springholz

  103
  Citations

• Exchange-coupled bimagnetic wüstite/metal ferrite core/shell nanocrystals: size, shape, and compositional control.

  Maryna I. Bodnarchuk;Maksym V. Kovalenko;Heiko Groiss;Roland Resel

  100
  Citations