World's Best Scientists 2026 revealed!

D-Index & Metrics

Electronics and Electrical Engineering

D-Index
40
Citations
7288
World Ranking
4462
National Ranking
73

Chee Wee Liu publication distribution in Electronics and Electrical Engineering in 2026

The chart shows the distribution of publications by all Research.com ranked scientists in the field of Electronics and Electrical Engineering in 2026. The highlighted bar marks where Chee Wee Liu sits on this spectrum.

34–53 publications: 24 scientists 54–73 publications: 52 scientists 74–93 publications: 114 scientists 94–113 publications: 203 scientists 114–133 publications: 269 scientists 134–153 publications: 355 scientists 154–173 publications: 403 scientists 174–193 publications: 446 scientists 194–213 publications: 430 scientists 214–233 publications: 431 scientists 234–253 publications: 399 scientists 254–273 publications: 366 scientists 274–293 publications: 335 scientists 294–313 publications: 300 scientists 314–333 publications: 276 scientists 334–353 publications: 250 scientists 354–373 publications: 214 scientists 374–393 publications: 187 scientists 394–413 publications: 152 scientists 414–433 publications: 169 scientists 434–453 publications: 147 scientists 454–473 publications: 111 scientists 474–493 publications: 117 scientists 494–513 publications: 103 scientists 514–533 publications: 99 scientists 534–553 publications: 92 scientists 554–573 publications: 75 scientists 574–593 publications: 58 scientists 594–613 publications: 69 scientists 614–633 publications: 50 scientists 634–653 publications: 62 scientists 654–673 publications: 54 scientists 674–693 publications: 44 scientists 694–713 publications: 37 scientists 714–733 publications: 28 scientists 734–753 publications: 26 scientists 754–773 publications: 26 scientists 774–793 publications: 19 scientists 794–813 publications: 23 scientists 814–833 publications: 20 scientists 834–853 publications: 16 scientists 854–873 publications: 20 scientists 874–893 publications: 11 scientists 894–913 publications: 11 scientists 914–933 publications: 16 scientists 934–953 publications: 13 scientists 954–973 publications: 10 scientists 974–993 publications: 11 scientists 994–1,013 publications: 9 scientists 1,014–1,033 publications: 9 scientists 1,034–1,053 publications: 10 scientists 1,054–1,064 publications: 6 scientists 1,065+ publications: 99 scientists
34 publications 1,065+

This scientist: 480 publications — 82nd percentile

82% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 1,065 publications or more.

Chee Wee Liu D-index placement in Electronics and Electrical Engineering in 2026

The chart shows the D-index (discipline H-index) distribution of Electronics and Electrical Engineering scientists ranked by Research.com in 2026. The highlighted bar marks where Chee Wee Liu sits on this spectrum.

30 D-Index: 178 scientists 31 D-Index: 257 scientists 32 D-Index: 263 scientists 33 D-Index: 263 scientists 34 D-Index: 244 scientists 35 D-Index: 236 scientists 36 D-Index: 211 scientists 37 D-Index: 220 scientists 38 D-Index: 214 scientists 39 D-Index: 214 scientists 40 D-Index: 205 scientists 41 D-Index: 187 scientists 42 D-Index: 194 scientists 43 D-Index: 201 scientists 44 D-Index: 155 scientists 45 D-Index: 189 scientists 46 D-Index: 148 scientists 47 D-Index: 160 scientists 48 D-Index: 134 scientists 49 D-Index: 130 scientists 50 D-Index: 141 scientists 51 D-Index: 156 scientists 52 D-Index: 108 scientists 53 D-Index: 130 scientists 54 D-Index: 112 scientists 55 D-Index: 97 scientists 56 D-Index: 111 scientists 57 D-Index: 102 scientists 58 D-Index: 108 scientists 59 D-Index: 120 scientists 60 D-Index: 103 scientists 61 D-Index: 93 scientists 62 D-Index: 92 scientists 63 D-Index: 74 scientists 64 D-Index: 77 scientists 65 D-Index: 73 scientists 66 D-Index: 64 scientists 67 D-Index: 69 scientists 68 D-Index: 60 scientists 69 D-Index: 39 scientists 70 D-Index: 57 scientists 71 D-Index: 59 scientists 72 D-Index: 46 scientists 73 D-Index: 49 scientists 74 D-Index: 38 scientists 75 D-Index: 35 scientists 76 D-Index: 32 scientists 77 D-Index: 35 scientists 78 D-Index: 31 scientists 79 D-Index: 22 scientists 80 D-Index: 34 scientists 81 D-Index: 31 scientists 82 D-Index: 34 scientists 83 D-Index: 23 scientists 84 D-Index: 18 scientists 85 D-Index: 30 scientists 86 D-Index: 19 scientists 87 D-Index: 19 scientists 88 D-Index: 20 scientists 89 D-Index: 8 scientists 90 D-Index: 17 scientists 91 D-Index: 7 scientists 92 D-Index: 14 scientists 93 D-Index: 9 scientists 94 D-Index: 15 scientists 95 D-Index: 10 scientists 96 D-Index: 12 scientists 97 D-Index: 10 scientists 98 D-Index: 10 scientists 99 D-Index: 12 scientists 100 D-Index: 16 scientists 101 D-Index: 5 scientists 102 D-Index: 7 scientists 103 D-Index: 7 scientists 104 D-Index: 8 scientists 105 D-Index: 9 scientists 106 D-Index: 13 scientists 107 D-Index: 4 scientists 108 D-Index: 5 scientists 109 D-Index: 10 scientists 110 D-Index: 8 scientists 111+ D-Index: 96 scientists
30 D-Index 111+

This scientist: 40 D-Index — 36th percentile

36% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 111 D-Index or more.

Research.com Recognitions

  • 2018 - IEEE Fellow For contributions to high-mobility Ge and SiGe MOSFETs

Overview

What is he best known for?

The fields of study he is best known for:

  • Semiconductor
  • Electrical engineering
  • Optics

His primary scientific interests are in Optoelectronics, Silicon, Germanium, Band gap and Heterojunction. His Optoelectronics study incorporates themes from Layer, Electronic engineering and MOSFET. Chee-Wee Liu combines subjects such as Thin film, Chemical vapor deposition, Gate dielectric and Analytical chemistry with his study of Silicon.

His work deals with themes such as Scattering, Raman spectroscopy, Quantum dot, Condensed matter physics and Strained silicon, which intersect with Germanium. His work carried out in the field of Band gap brings together such families of science as Electron hole and Photoluminescence. In his study, Schottky barrier, Diffraction, Temperature coefficient and Breakdown voltage is strongly linked to Bipolar junction transistor, which falls under the umbrella field of Heterojunction.

His most cited work include:

  • Strained silicon fin field effect transistor (151 citations)
  • Above-11%-Efficiency Organic–Inorganic Hybrid Solar Cells with Omnidirectional Harvesting Characteristics by Employing Hierarchical Photon-Trapping Structures (150 citations)
  • Metal-insulator-semiconductor photodetectors. (110 citations)

What are the main themes of his work throughout his whole career to date?

His primary areas of study are Optoelectronics, Silicon, Condensed matter physics, Germanium and Layer. His research integrates issues of Transistor, Substrate and Electroluminescence in his study of Optoelectronics. His Silicon research is multidisciplinary, relying on both Oxide, Chemical vapor deposition, Heterojunction, Electronic engineering and Band gap.

His biological study spans a wide range of topics, including Epitaxy and Analytical chemistry. His Condensed matter physics study incorporates themes from Quantum well, Electron density, Quantum Hall effect and Effective mass. His MOSFET research is multidisciplinary, incorporating perspectives in PMOS logic and Field-effect transistor.

He most often published in these fields:

  • Optoelectronics (66.12%)
  • Silicon (26.94%)
  • Condensed matter physics (15.31%)

What were the highlights of his more recent work (between 2014-2021)?

  • Optoelectronics (66.12%)
  • Condensed matter physics (15.31%)
  • Quantum well (7.96%)

In recent papers he was focusing on the following fields of study:

Chee-Wee Liu mostly deals with Optoelectronics, Condensed matter physics, Quantum well, Layer and Doping. Chee-Wee Liu combines subjects such as Scattering, Semiconductor device, Substrate, Gate dielectric and Electrical engineering with his study of Optoelectronics. His Condensed matter physics study is mostly concerned with Heterojunction and Electron mobility.

His Quantum well study integrates concerns from other disciplines, such as Silicon, Fermi gas, Photoluminescence and Anisotropy. His study brings together the fields of Electronic engineering and Silicon. His study in Doping is interdisciplinary in nature, drawing from both Epitaxy and Analytical chemistry.

Between 2014 and 2021, his most popular works were:

  • Physical thickness 1.x nm ferroelectric HfZrOx negative capacitance FETs (82 citations)
  • Ferroelectric Al:HfO 2 negative capacitance FETs (20 citations)
  • Indication of band flattening at the Fermi level in a strongly correlated electron system (19 citations)

In his most recent research, the most cited papers focused on:

  • Semiconductor
  • Electrical engineering
  • Optics

Chee-Wee Liu spends much of his time researching Optoelectronics, Condensed matter physics, Quantum well, Electrical engineering and Semiconductor device. Chee-Wee Liu has researched Optoelectronics in several fields, including Layer and Field-effect transistor, Transistor. His work on Electron mobility and Pseudopotential is typically connected to Impurity as part of general Condensed matter physics study, connecting several disciplines of science.

He interconnects Heterojunction and Doping in the investigation of issues within Electron mobility. His Quantum well study combines topics in areas such as Silicon and Germanium. His studies deal with areas such as Band gap, Electroluminescence and Quantum tunnelling as well as Germanium.

Best Publications

  • Strained Si FinFET

    Chang Shu-Tong;Hwang Shi-Hao;Liu Chee-Wee

  • Metal-insulator-semiconductor photodetectors.

    Chu-Hsuan Lin;Chee Wee Liu

  • Above-11%-Efficiency Organic–Inorganic Hybrid Solar Cells with Omnidirectional Harvesting Characteristics by Employing Hierarchical Photon-Trapping Structures

    Wan-Rou Wei;Meng-Lin Tsai;Shu-Te Ho;Shih-Hsiang Tai

  • Physical thickness 1.x nm ferroelectric HfZrOx negative capacitance FETs

    M. H. Lee;S.-T. Fan;C.-H. Tang;P.-G. Chen

  • Defect‐free band‐edge photoluminescence and band gap measurement of pseudomorphic Si1−x−yGexCy alloy layers on Si (100)

    A. St. Amour;C. W. Liu;J. C. Sturm;Y. Lacroix

  • Electron mobility enhancement in strained-germanium n-channel metal-oxide-semiconductor field-effect transistors

    Y.-J. Yang;W. S. Ho;C.-F. Huang;S. T. Chang

  • Low temperature chemical vapor deposition growth of β-SiC on (100) Si using methylsilane and device characteristics

    C. W. Liu;J. C. Sturm

  • Structure of strain relaxed thin Si/Ge epitaxial layer and fabricating method thereof

    Chen Pang-Shiu;Lee Sheng-Wei;Liao Kao-Feng;Chen Li-Chun

  • Low-temperature fabrication and characterization of Ge-on-insulator structures

    C.-Y. Yu;C.-Y. Lee;C.-H. Lin;C. W. Liu

  • Room-temperature electroluminescence from electron-hole plasmas in the metal-oxide-silicon tunneling diodes

    C. W. Liu;M. H. Lee;Miin Jang Chen;I. C. Lin

  • Comprehensive study of the Raman shifts of strained silicon and germanium

    C.-Y. Peng;C.-F. Huang;Y.-C. Fu;Y.-H. Yang

  • Strain-enhanced photoluminescence from Ge direct transition

    T.-H. Cheng;K.-L. Peng;C.-Y. Ko;C.-Y. Chen

  • Realizing high-efficiency omnidirectional n-type Si solar cells via the hierarchical architecture concept with radial junctions.

    Hsin-Ping Wang;Tzu-Yin Lin;Chia-Wei Hsu;Meng-Lin Tsai

  • Si/Si/sub 1-x-y/Ge x C y /Si heterojunction bipolar transistors

    L.D. Lanzerotti;A. St. Amour;C.W. Liu;J.C. Sturm

  • A novel photodetector using MOS tunneling structures

    C.W. Liu;W.T. Liu;M.H. Lee;W.S. Kuo

  • Quantum confinement effects in strained silicon‐germanium alloy quantum wells

    X. Xiao;C. W. Liu;J. C. Sturm;L. C. Lenchyshyn

  • Thin-film solar cell having hetero-junction of semiconductor and method for fabricating the same

    Chee-Wee Liu;Cheng-Yeh Yu;Wen-Yuan Chen;Chu-Hsuan Lin

  • Observation of two-dimensional electron gas in a Si quantum well with mobility of 1.6×106 cm2/Vs

    T. M. Lu;D. C. Tsui;C.-H. Lee;C. W. Liu

  • A high efficient 820 nm MOS Ge quantum dot photodetector

    B.-C. Hsu;S.T. Chang;T.-C. Chen;P.-S. Kuo

  • Competitiveness between direct and indirect radiative transitions of Ge

    T.-H. Cheng;C.-Y. Ko;C.-Y. Chen;K.-L. Peng

  • Photoluminescence from electron‐hole plasmas confined in Si/Si1−xGex/Si quantum wells

    X. Xiao;C. W. Liu;J. C. Sturm;L. C. Lenchyshyn

Frequent Co-Authors

James C. Sturm
James C. Sturm Princeton University
Fu-Liang Yang
Fu-Liang Yang Academia Sinica
Chenming Hu
Chenming Hu University of California, Berkeley
Jin-Wei Shi
Jin-Wei Shi National Central University
Ming-Jinn Tsai
Ming-Jinn Tsai Industrial Technology Research Institute
Mong-Song Liang
Mong-Song Liang Taiwan Semiconductor Manufacturing Company (United States)
Shoou-Jinn Chang
Shoou-Jinn Chang National Cheng Kung University
Gong-Ru Lin
Gong-Ru Lin National Taiwan University
Yit-Tsong Chen
Yit-Tsong Chen National Taiwan University
Yu-Lun Chueh
Yu-Lun Chueh National Tsing Hua University

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