World's Best Scientists 2026 revealed!

D-Index & Metrics

Electronics and Electrical Engineering

D-Index
40
Citations
7288
World Ranking
4462
National Ranking
73

Research.com Recognitions

  • 2018 - IEEE Fellow For contributions to high-mobility Ge and SiGe MOSFETs

Overview

What is he best known for?

The fields of study he is best known for:

  • Semiconductor
  • Electrical engineering
  • Optics

His primary scientific interests are in Optoelectronics, Silicon, Germanium, Band gap and Heterojunction. His Optoelectronics study incorporates themes from Layer, Electronic engineering and MOSFET. Chee-Wee Liu combines subjects such as Thin film, Chemical vapor deposition, Gate dielectric and Analytical chemistry with his study of Silicon.

His work deals with themes such as Scattering, Raman spectroscopy, Quantum dot, Condensed matter physics and Strained silicon, which intersect with Germanium. His work carried out in the field of Band gap brings together such families of science as Electron hole and Photoluminescence. In his study, Schottky barrier, Diffraction, Temperature coefficient and Breakdown voltage is strongly linked to Bipolar junction transistor, which falls under the umbrella field of Heterojunction.

His most cited work include:

  • Strained silicon fin field effect transistor (151 citations)
  • Above-11%-Efficiency Organic–Inorganic Hybrid Solar Cells with Omnidirectional Harvesting Characteristics by Employing Hierarchical Photon-Trapping Structures (150 citations)
  • Metal-insulator-semiconductor photodetectors. (110 citations)

What are the main themes of his work throughout his whole career to date?

His primary areas of study are Optoelectronics, Silicon, Condensed matter physics, Germanium and Layer. His research integrates issues of Transistor, Substrate and Electroluminescence in his study of Optoelectronics. His Silicon research is multidisciplinary, relying on both Oxide, Chemical vapor deposition, Heterojunction, Electronic engineering and Band gap.

His biological study spans a wide range of topics, including Epitaxy and Analytical chemistry. His Condensed matter physics study incorporates themes from Quantum well, Electron density, Quantum Hall effect and Effective mass. His MOSFET research is multidisciplinary, incorporating perspectives in PMOS logic and Field-effect transistor.

He most often published in these fields:

  • Optoelectronics (66.12%)
  • Silicon (26.94%)
  • Condensed matter physics (15.31%)

What were the highlights of his more recent work (between 2014-2021)?

  • Optoelectronics (66.12%)
  • Condensed matter physics (15.31%)
  • Quantum well (7.96%)

In recent papers he was focusing on the following fields of study:

Chee-Wee Liu mostly deals with Optoelectronics, Condensed matter physics, Quantum well, Layer and Doping. Chee-Wee Liu combines subjects such as Scattering, Semiconductor device, Substrate, Gate dielectric and Electrical engineering with his study of Optoelectronics. His Condensed matter physics study is mostly concerned with Heterojunction and Electron mobility.

His Quantum well study integrates concerns from other disciplines, such as Silicon, Fermi gas, Photoluminescence and Anisotropy. His study brings together the fields of Electronic engineering and Silicon. His study in Doping is interdisciplinary in nature, drawing from both Epitaxy and Analytical chemistry.

Between 2014 and 2021, his most popular works were:

  • Physical thickness 1.x nm ferroelectric HfZrOx negative capacitance FETs (82 citations)
  • Ferroelectric Al:HfO 2 negative capacitance FETs (20 citations)
  • Indication of band flattening at the Fermi level in a strongly correlated electron system (19 citations)

In his most recent research, the most cited papers focused on:

  • Semiconductor
  • Electrical engineering
  • Optics

Chee-Wee Liu spends much of his time researching Optoelectronics, Condensed matter physics, Quantum well, Electrical engineering and Semiconductor device. Chee-Wee Liu has researched Optoelectronics in several fields, including Layer and Field-effect transistor, Transistor. His work on Electron mobility and Pseudopotential is typically connected to Impurity as part of general Condensed matter physics study, connecting several disciplines of science.

He interconnects Heterojunction and Doping in the investigation of issues within Electron mobility. His Quantum well study combines topics in areas such as Silicon and Germanium. His studies deal with areas such as Band gap, Electroluminescence and Quantum tunnelling as well as Germanium.

Best Publications

  • Strained Si FinFET

    Chang Shu-Tong;Hwang Shi-Hao;Liu Chee-Wee

  • Metal-insulator-semiconductor photodetectors.

    Chu-Hsuan Lin;Chee Wee Liu

  • Above-11%-Efficiency Organic–Inorganic Hybrid Solar Cells with Omnidirectional Harvesting Characteristics by Employing Hierarchical Photon-Trapping Structures

    Wan-Rou Wei;Meng-Lin Tsai;Shu-Te Ho;Shih-Hsiang Tai

  • Physical thickness 1.x nm ferroelectric HfZrOx negative capacitance FETs

    M. H. Lee;S.-T. Fan;C.-H. Tang;P.-G. Chen

  • Defect‐free band‐edge photoluminescence and band gap measurement of pseudomorphic Si1−x−yGexCy alloy layers on Si (100)

    A. St. Amour;C. W. Liu;J. C. Sturm;Y. Lacroix

  • Electron mobility enhancement in strained-germanium n-channel metal-oxide-semiconductor field-effect transistors

    Y.-J. Yang;W. S. Ho;C.-F. Huang;S. T. Chang

  • Low temperature chemical vapor deposition growth of β-SiC on (100) Si using methylsilane and device characteristics

    C. W. Liu;J. C. Sturm

  • Structure of strain relaxed thin Si/Ge epitaxial layer and fabricating method thereof

    Chen Pang-Shiu;Lee Sheng-Wei;Liao Kao-Feng;Chen Li-Chun

  • Low-temperature fabrication and characterization of Ge-on-insulator structures

    C.-Y. Yu;C.-Y. Lee;C.-H. Lin;C. W. Liu

  • Room-temperature electroluminescence from electron-hole plasmas in the metal-oxide-silicon tunneling diodes

    C. W. Liu;M. H. Lee;Miin Jang Chen;I. C. Lin

  • Comprehensive study of the Raman shifts of strained silicon and germanium

    C.-Y. Peng;C.-F. Huang;Y.-C. Fu;Y.-H. Yang

  • Strain-enhanced photoluminescence from Ge direct transition

    T.-H. Cheng;K.-L. Peng;C.-Y. Ko;C.-Y. Chen

  • Realizing high-efficiency omnidirectional n-type Si solar cells via the hierarchical architecture concept with radial junctions.

    Hsin-Ping Wang;Tzu-Yin Lin;Chia-Wei Hsu;Meng-Lin Tsai

  • Si/Si/sub 1-x-y/Ge x C y /Si heterojunction bipolar transistors

    L.D. Lanzerotti;A. St. Amour;C.W. Liu;J.C. Sturm

  • A novel photodetector using MOS tunneling structures

    C.W. Liu;W.T. Liu;M.H. Lee;W.S. Kuo

  • Quantum confinement effects in strained silicon‐germanium alloy quantum wells

    X. Xiao;C. W. Liu;J. C. Sturm;L. C. Lenchyshyn

  • Thin-film solar cell having hetero-junction of semiconductor and method for fabricating the same

    Chee-Wee Liu;Cheng-Yeh Yu;Wen-Yuan Chen;Chu-Hsuan Lin

  • Observation of two-dimensional electron gas in a Si quantum well with mobility of 1.6×106 cm2/Vs

    T. M. Lu;D. C. Tsui;C.-H. Lee;C. W. Liu

  • A high efficient 820 nm MOS Ge quantum dot photodetector

    B.-C. Hsu;S.T. Chang;T.-C. Chen;P.-S. Kuo

  • Competitiveness between direct and indirect radiative transitions of Ge

    T.-H. Cheng;C.-Y. Ko;C.-Y. Chen;K.-L. Peng

  • Photoluminescence from electron‐hole plasmas confined in Si/Si1−xGex/Si quantum wells

    X. Xiao;C. W. Liu;J. C. Sturm;L. C. Lenchyshyn

Frequent Co-Authors

James C. Sturm
James C. Sturm Princeton University
Fu-Liang Yang
Fu-Liang Yang Academia Sinica
Chenming Hu
Chenming Hu University of California, Berkeley
Jin-Wei Shi
Jin-Wei Shi National Central University
Ming-Jinn Tsai
Ming-Jinn Tsai Industrial Technology Research Institute
Mong-Song Liang
Mong-Song Liang Taiwan Semiconductor Manufacturing Company (United States)
Shoou-Jinn Chang
Shoou-Jinn Chang National Cheng Kung University
Gong-Ru Lin
Gong-Ru Lin National Taiwan University
Yit-Tsong Chen
Yit-Tsong Chen National Taiwan University
Yu-Lun Chueh
Yu-Lun Chueh National Tsing Hua University

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