2018 - IEEE Fellow For contributions to high-mobility Ge and SiGe MOSFETs
His primary scientific interests are in Optoelectronics, Silicon, Germanium, Band gap and Heterojunction. His Optoelectronics study incorporates themes from Layer, Electronic engineering and MOSFET. Chee-Wee Liu combines subjects such as Thin film, Chemical vapor deposition, Gate dielectric and Analytical chemistry with his study of Silicon.
His work deals with themes such as Scattering, Raman spectroscopy, Quantum dot, Condensed matter physics and Strained silicon, which intersect with Germanium. His work carried out in the field of Band gap brings together such families of science as Electron hole and Photoluminescence. In his study, Schottky barrier, Diffraction, Temperature coefficient and Breakdown voltage is strongly linked to Bipolar junction transistor, which falls under the umbrella field of Heterojunction.
His primary areas of study are Optoelectronics, Silicon, Condensed matter physics, Germanium and Layer. His research integrates issues of Transistor, Substrate and Electroluminescence in his study of Optoelectronics. His Silicon research is multidisciplinary, relying on both Oxide, Chemical vapor deposition, Heterojunction, Electronic engineering and Band gap.
His biological study spans a wide range of topics, including Epitaxy and Analytical chemistry. His Condensed matter physics study incorporates themes from Quantum well, Electron density, Quantum Hall effect and Effective mass. His MOSFET research is multidisciplinary, incorporating perspectives in PMOS logic and Field-effect transistor.
Chee-Wee Liu mostly deals with Optoelectronics, Condensed matter physics, Quantum well, Layer and Doping. Chee-Wee Liu combines subjects such as Scattering, Semiconductor device, Substrate, Gate dielectric and Electrical engineering with his study of Optoelectronics. His Condensed matter physics study is mostly concerned with Heterojunction and Electron mobility.
His Quantum well study integrates concerns from other disciplines, such as Silicon, Fermi gas, Photoluminescence and Anisotropy. His study brings together the fields of Electronic engineering and Silicon. His study in Doping is interdisciplinary in nature, drawing from both Epitaxy and Analytical chemistry.
Chee-Wee Liu spends much of his time researching Optoelectronics, Condensed matter physics, Quantum well, Electrical engineering and Semiconductor device. Chee-Wee Liu has researched Optoelectronics in several fields, including Layer and Field-effect transistor, Transistor. His work on Electron mobility and Pseudopotential is typically connected to Impurity as part of general Condensed matter physics study, connecting several disciplines of science.
He interconnects Heterojunction and Doping in the investigation of issues within Electron mobility. His Quantum well study combines topics in areas such as Silicon and Germanium. His studies deal with areas such as Band gap, Electroluminescence and Quantum tunnelling as well as Germanium.
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Strained Si FinFET
Chang Shu-Tong;Hwang Shi-Hao;Liu Chee-Wee.
(2004)
Strained Si FinFET
Chang Shu-Tong;Hwang Shi-Hao;Liu Chee-Wee.
(2004)
Metal-insulator-semiconductor photodetectors.
Chu-Hsuan Lin;Chee Wee Liu.
Sensors (2010)
Metal-insulator-semiconductor photodetectors.
Chu-Hsuan Lin;Chee Wee Liu.
Sensors (2010)
Above-11%-Efficiency Organic–Inorganic Hybrid Solar Cells with Omnidirectional Harvesting Characteristics by Employing Hierarchical Photon-Trapping Structures
Wan-Rou Wei;Meng-Lin Tsai;Shu-Te Ho;Shih-Hsiang Tai.
Nano Letters (2013)
Above-11%-Efficiency Organic–Inorganic Hybrid Solar Cells with Omnidirectional Harvesting Characteristics by Employing Hierarchical Photon-Trapping Structures
Wan-Rou Wei;Meng-Lin Tsai;Shu-Te Ho;Shih-Hsiang Tai.
Nano Letters (2013)
Defect‐free band‐edge photoluminescence and band gap measurement of pseudomorphic Si1−x−yGexCy alloy layers on Si (100)
A. St. Amour;C. W. Liu;J. C. Sturm;Y. Lacroix.
Applied Physics Letters (1995)
Defect‐free band‐edge photoluminescence and band gap measurement of pseudomorphic Si1−x−yGexCy alloy layers on Si (100)
A. St. Amour;C. W. Liu;J. C. Sturm;Y. Lacroix.
Applied Physics Letters (1995)
Physical thickness 1.x nm ferroelectric HfZrOx negative capacitance FETs
M. H. Lee;S.-T. Fan;C.-H. Tang;P.-G. Chen.
international electron devices meeting (2016)
Physical thickness 1.x nm ferroelectric HfZrOx negative capacitance FETs
M. H. Lee;S.-T. Fan;C.-H. Tang;P.-G. Chen.
international electron devices meeting (2016)
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