D-Index & Metrics Best Publications

D-Index & Metrics D-index (Discipline H-index) only includes papers and citation values for an examined discipline in contrast to General H-index which accounts for publications across all disciplines.

Discipline name D-index D-index (Discipline H-index) only includes papers and citation values for an examined discipline in contrast to General H-index which accounts for publications across all disciplines. Citations Publications World Ranking National Ranking
Electronics and Electrical Engineering D-index 42 Citations 6,742 188 World Ranking 2546 National Ranking 39

Overview

What is he best known for?

The fields of study he is best known for:

  • Semiconductor
  • Transistor
  • Integrated circuit

His primary areas of study are Optoelectronics, Transistor, Electrical engineering, Semiconductor and Gate oxide. His Optoelectronics study integrates concerns from other disciplines, such as Electronic engineering, Gate dielectric and MOSFET. The study incorporates disciplines such as Layer, Undercut and Electrically conductive in addition to Electronic engineering.

His work in the fields of Field-effect transistor overlaps with other areas such as Fin and Low-power electronics. The Semiconductor study combines topics in areas such as Semiconductor device and Insulator. His study looks at the relationship between Silicon and fields such as Strained silicon, as well as how they intersect with chemical problems.

His most cited work include:

  • Effect of Top Electrode Material on Resistive Switching Properties of $\hbox{ZrO}_{2}$ Film Memory Devices (290 citations)
  • 5nm-gate nanowire FinFET (250 citations)
  • Semiconductor-on-insulator chip incorporating strained-channel partially-depleted, fully-depleted, and multiple-gate transistors (246 citations)

What are the main themes of his work throughout his whole career to date?

Fu-Liang Yang mainly investigates Optoelectronics, Transistor, Electrical engineering, Layer and Silicon on insulator. He has included themes like Gate dielectric, Gate oxide and MOSFET in his Optoelectronics study. His Transistor research is multidisciplinary, relying on both Doping and Undercut.

His research is interdisciplinary, bridging the disciplines of Dopant and Electrical engineering. As a part of the same scientific study, Fu-Liang Yang usually deals with the Silicon, concentrating on Electronic engineering and frequently concerns with Germanium. His CMOS research focuses on subjects like Nanotechnology, which are linked to Lithography.

He most often published in these fields:

  • Optoelectronics (80.87%)
  • Transistor (28.70%)
  • Electrical engineering (27.83%)

What were the highlights of his more recent work (between 2011-2019)?

  • Optoelectronics (80.87%)
  • Nanotechnology (13.04%)
  • Electrical engineering (27.83%)

In recent papers he was focusing on the following fields of study:

Fu-Liang Yang mostly deals with Optoelectronics, Nanotechnology, Electrical engineering, Silicon and CMOS. His study in the field of Doping also crosses realms of Annealing. His Nanotechnology research includes elements of Field-effect transistor, Transistor and Lithography.

As a member of one scientific family, Fu-Liang Yang mostly works in the field of Electrical engineering, focusing on Dopant and, on occasion, Sheet resistance and Wafer. His Silicon research is multidisciplinary, incorporating perspectives in Solar cell efficiency and Layer, Semiconductor structure, Semiconductor device. His MOSFET study incorporates themes from Threshold voltage and Deposition.

Between 2011 and 2019, his most popular works were:

  • Sub-60mV-swing negative-capacitance FinFET without hysteresis (131 citations)
  • Low-Temperature Microwave Annealing Processes for Future IC Fabrication—A Review (38 citations)
  • Fast programming metal-gate Si quantum dot nonvolatile memory using green nanosecond laser spike annealing (35 citations)

In his most recent research, the most cited papers focused on:

  • Semiconductor
  • Transistor
  • Integrated circuit

Fu-Liang Yang focuses on Optoelectronics, Nanotechnology, Logic gate, Electrical engineering and Nanowire. Fu-Liang Yang specializes in Optoelectronics, namely Silicon. In his work, Stress time, Reliability, Semiconductor and Lithography is strongly intertwined with Voltage, which is a subfield of Nanotechnology.

His studies in Logic gate integrate themes in fields like Node, Gate oxide and MOSFET. His MOSFET study integrates concerns from other disciplines, such as Electron mobility, Epitaxy, Defect free, Etching and Silicon on insulator. His work carried out in the field of Nanowire brings together such families of science as Layer, Cmos compatible and Semiconductor device fabrication.

This overview was generated by a machine learning system which analysed the scientist’s body of work. If you have any feedback, you can contact us here.

Best Publications

Effect of Top Electrode Material on Resistive Switching Properties of $\hbox{ZrO}_{2}$ Film Memory Devices

Chih-Yang Lin;Chen-Yu Wu;Chung-Yi Wu;Tzyh-Cheang Lee.
IEEE Electron Device Letters (2007)

451 Citations

Effect of Top Electrode Material on Resistive Switching Properties of $\hbox{ZrO}_{2}$ Film Memory Devices

Chih-Yang Lin;Chen-Yu Wu;Chung-Yi Wu;Tzyh-Cheang Lee.
IEEE Electron Device Letters (2007)

451 Citations

Semiconductor-on-insulator chip incorporating strained-channel partially-depleted, fully-depleted, and multiple-gate transistors

Yang Yujia;Chen Haoyu;Huang Jianchao.
(2003)

428 Citations

5nm-gate nanowire FinFET

Fu-Liang Yang;Di-Hong Lee;Hou-Yu Chen;Chang-Yun Chang.
symposium on vlsi technology (2004)

413 Citations

5nm-gate nanowire FinFET

Fu-Liang Yang;Di-Hong Lee;Hou-Yu Chen;Chang-Yun Chang.
symposium on vlsi technology (2004)

413 Citations

25 nm CMOS Omega FETs

Fu-Liang Yang;Hao-Yu Chen;Fang-Cheng Chen;Cheng-Chuan Huang.
international electron devices meeting (2002)

354 Citations

25 nm CMOS Omega FETs

Fu-Liang Yang;Hao-Yu Chen;Fang-Cheng Chen;Cheng-Chuan Huang.
international electron devices meeting (2002)

354 Citations

Method of forming a transistor with a strained channel

Yee-Chia Yeo;Fu-Liang Yang;Chenming Hu.
(2002)

351 Citations

Method of forming a transistor with a strained channel

Yee-Chia Yeo;Fu-Liang Yang;Chenming Hu.
(2002)

351 Citations

Sub-60mV-swing negative-capacitance FinFET without hysteresis

Kai-Shin Li;Pin-Guang Chen;Tung-Yan Lai;Chang-Hsien Lin.
international electron devices meeting (2015)

285 Citations

If you think any of the details on this page are incorrect, let us know.

Contact us

Best Scientists Citing Fu-Liang Yang

Edward J. Nowak

Edward J. Nowak

Quantum Queries

Publications: 48

Kangguo Cheng

Kangguo Cheng

IBM (United States)

Publications: 48

Chenming Hu

Chenming Hu

University of California, Berkeley

Publications: 47

Robert S. Chau

Robert S. Chau

Intel (United States)

Publications: 47

Jeffrey W. Sleight

Jeffrey W. Sleight

IBM (United States)

Publications: 44

Tseung-Yuen Tseng

Tseung-Yuen Tseng

National Yang Ming Chiao Tung University

Publications: 44

Bruce B. Doris

Bruce B. Doris

IBM (United States)

Publications: 43

jack t kavalieros

jack t kavalieros

Intel (United States)

Publications: 41

Brian S. Doyle

Brian S. Doyle

Intel (United States)

Publications: 41

Suman Datta

Suman Datta

University of Notre Dame

Publications: 36

Ali Khakifirooz

Ali Khakifirooz

Intel (United States)

Publications: 32

Jean-Pierre Colinge

Jean-Pierre Colinge

CEA LETI

Publications: 29

anthony j lochtefeld

anthony j lochtefeld

Taiwan Semiconductor Manufacturing Company (United States)

Publications: 28

Gurtej S. Sandhu

Gurtej S. Sandhu

Micron (United States)

Publications: 27

Alexander Reznicek

Alexander Reznicek

IBM (United States)

Publications: 27

Justin K. Brask

Justin K. Brask

Intel (United States)

Publications: 25

Trending Scientists

Hans Triebel

Hans Triebel

Friedrich Schiller University Jena

Reinhard Niessner

Reinhard Niessner

Technical University of Munich

Douglas C. Rees

Douglas C. Rees

California Institute of Technology

Tetsuji Kakutani

Tetsuji Kakutani

University of Tokyo

Mikhail A. Semenov

Mikhail A. Semenov

Rothamsted Research

Miguel Quemada

Miguel Quemada

Technical University of Madrid

Bruce E. Torbett

Bruce E. Torbett

Scripps Research Institute

Tambet Teesalu

Tambet Teesalu

University of Tartu

David W. Meinke

David W. Meinke

Oklahoma State University

Minoru Yoshida

Minoru Yoshida

University of Tokyo

Edward D. Chan

Edward D. Chan

Veterans Health Administration

Vivien Béziat

Vivien Béziat

Rockefeller University

Robert Goodman

Robert Goodman

King's College London

Aaron B. Caughey

Aaron B. Caughey

Oregon Health & Science University

Jutta Roosen

Jutta Roosen

Technical University of Munich

Mathias Fink

Mathias Fink

ESPCI Paris

Something went wrong. Please try again later.