World's Best Scientists 2026 revealed!

D-Index & Metrics

Materials Science

D-Index
61
Citations
15799
World Ranking
6689
National Ranking
114

David J. Lockwood publication distribution in Materials Science in 2026

The chart shows the distribution of publications by all Research.com ranked scientists in the field of Materials Science in 2026. The highlighted bar marks where David J. Lockwood sits on this spectrum.

50–69 publications: 28 scientists 70–89 publications: 152 scientists 90–109 publications: 356 scientists 110–129 publications: 487 scientists 130–149 publications: 723 scientists 150–169 publications: 835 scientists 170–189 publications: 850 scientists 190–209 publications: 891 scientists 210–229 publications: 862 scientists 230–249 publications: 766 scientists 250–269 publications: 726 scientists 270–289 publications: 665 scientists 290–309 publications: 593 scientists 310–329 publications: 537 scientists 330–349 publications: 477 scientists 350–369 publications: 440 scientists 370–389 publications: 356 scientists 390–409 publications: 321 scientists 410–429 publications: 256 scientists 430–449 publications: 246 scientists 450–469 publications: 216 scientists 470–489 publications: 212 scientists 490–509 publications: 174 scientists 510–529 publications: 194 scientists 530–549 publications: 162 scientists 550–569 publications: 131 scientists 570–589 publications: 111 scientists 590–609 publications: 103 scientists 610–629 publications: 99 scientists 630–649 publications: 77 scientists 650–669 publications: 92 scientists 670–689 publications: 56 scientists 690–709 publications: 53 scientists 710–729 publications: 53 scientists 730–749 publications: 38 scientists 750–769 publications: 52 scientists 770–789 publications: 43 scientists 790–809 publications: 38 scientists 810–829 publications: 34 scientists 830–849 publications: 25 scientists 850–869 publications: 18 scientists 870–889 publications: 20 scientists 890–909 publications: 24 scientists 910–929 publications: 27 scientists 930–949 publications: 20 scientists 950–969 publications: 17 scientists 970–989 publications: 10 scientists 990–1,009 publications: 16 scientists 1,010–1,029 publications: 13 scientists 1,030–1,049 publications: 12 scientists 1,050–1,069 publications: 9 scientists 1,070–1,089 publications: 8 scientists 1,090–1,109 publications: 7 scientists 1,110–1,129 publications: 9 scientists 1,130–1,149 publications: 2 scientists 1,150–1,162 publications: 5 scientists 1,163+ publications: 100 scientists
50 publications 1,163+

This scientist: 509 publications — 87th percentile

87% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 1,163 publications or more.

David J. Lockwood D-index placement in Materials Science in 2026

The chart shows the D-index (discipline H-index) distribution of Materials Science scientists ranked by Research.com in 2026. The highlighted bar marks where David J. Lockwood sits on this spectrum.

40–41 D-Index: 211 scientists 42–43 D-Index: 450 scientists 44–45 D-Index: 612 scientists 46–47 D-Index: 612 scientists 48–49 D-Index: 598 scientists 50–51 D-Index: 657 scientists 52–53 D-Index: 667 scientists 54–55 D-Index: 621 scientists 56–57 D-Index: 597 scientists 58–59 D-Index: 610 scientists 60–61 D-Index: 587 scientists 62–63 D-Index: 606 scientists 64–65 D-Index: 533 scientists 66–67 D-Index: 490 scientists 68–69 D-Index: 469 scientists 70–71 D-Index: 378 scientists 72–73 D-Index: 421 scientists 74–75 D-Index: 359 scientists 76–77 D-Index: 323 scientists 78–79 D-Index: 299 scientists 80–81 D-Index: 230 scientists 82–83 D-Index: 210 scientists 84–85 D-Index: 195 scientists 86–87 D-Index: 203 scientists 88–89 D-Index: 175 scientists 90–91 D-Index: 175 scientists 92–93 D-Index: 142 scientists 94–95 D-Index: 121 scientists 96–97 D-Index: 117 scientists 98–99 D-Index: 107 scientists 100–101 D-Index: 88 scientists 102–103 D-Index: 85 scientists 104–105 D-Index: 68 scientists 106–107 D-Index: 62 scientists 108–109 D-Index: 57 scientists 110–111 D-Index: 45 scientists 112–113 D-Index: 49 scientists 114–115 D-Index: 50 scientists 116–117 D-Index: 34 scientists 118–119 D-Index: 38 scientists 120–121 D-Index: 37 scientists 122–123 D-Index: 29 scientists 124–125 D-Index: 28 scientists 126–127 D-Index: 24 scientists 128–129 D-Index: 33 scientists 130–131 D-Index: 28 scientists 132–133 D-Index: 21 scientists 134–135 D-Index: 20 scientists 136–137 D-Index: 23 scientists 138–139 D-Index: 17 scientists 140–141 D-Index: 12 scientists 142–143 D-Index: 17 scientists 144–145 D-Index: 21 scientists 146–147 D-Index: 13 scientists 148–149 D-Index: 11 scientists 150–151 D-Index: 14 scientists 152–153 D-Index: 13 scientists 154–155 D-Index: 9 scientists 156–157 D-Index: 10 scientists 158–159 D-Index: 7 scientists 160–161 D-Index: 4 scientists 162–163 D-Index: 4 scientists 164 D-Index: 3 scientists 165+ D-Index: 98 scientists
40 D-Index 165+

This scientist: 61 D-Index — 48th percentile

48% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 165 D-Index or more.

Research.com Recognitions

  • 1999 - Fellow of the Royal Society of Canada Academy of Science

Overview

David J. Lockwood is affiliated with the National Research Council Canada. Their research spans multiple areas within engineering and materials science, focusing on electrical and electronic engineering, materials chemistry, atomic and molecular physics, optics, biomedical engineering, and electronic, optical, and magnetic materials.

The main topics of Lockwood's work include:

  • Silicon Nanostructures and Photoluminescence
  • Thin-Film Transistor Technologies
  • Chalcogenide Semiconductor Thin Films
  • Silicon and Solar Cell Technologies
  • Nanowire Synthesis and Applications
  • Photonic and Optical Devices
  • Quantum Dots Synthesis And Properties

Lockwood has published in a variety of scientific journals and venues, with frequent contributions to:

  • Journal of Applied Physics
  • Journal of Materials Science Materials in Electronics
  • ECS Meeting Abstracts
  • ECS Transactions
  • Physica B Condensed Matter

Recent papers by Lockwood include:

  • "Spray coated of newly La-doped SnS2 thin films for photocatalytic degradation application," 2023, Physica B Condensed Matter
  • "Photoluminescence in PbS nanocrystal thin films: Nanocrystal density, film morphology and energy transfer," 2020, Journal of Applied Physics
  • "Oblique incidence infrared reflectance spectroscopy of phonons in cubic MgO, MnO, and NiO," 2020, Infrared Physics & Technology
  • "Influence of the growth temperature on the spectral dependence of the optical functions associated with thin silicon films grown by ultra-high-vacuum evaporation on optical quality fused quartz substrates," 2020, Journal of Materials Science Materials in Electronics
  • "Crystallinity, order, the thin-film silicon continuum, and the spectral dependence of the refractive index in thin silicon films grown through ultra-high-vacuum evaporation for a range of growth temperatures," 2021, Journal of Non-Crystalline Solids

Lockwood has collaborated frequently with the following coauthors:

  • N. L. Rowell
  • Stephen K. O'Leary
  • J.-M. Baribeau
  • L. Tsybeskov
  • Saeed Moghaddam

In addition to journal articles, Lockwood has contributed to academic books published by notable publishers:

  • "Silicon Photonics IV," 2021, Springer Science+Business Media
  • "Molecular Architectonics and Nanoarchitectonics," 2021, Springer Nature
  • "The Politics of the Malayan Communist Party from 1930 to 1948," 2024, National University of Singapore

Recognition for Lockwood's work includes the award of Fellow of the Royal Society of Canada in 1999 by the Academy of Science.

Best Publications

  • Nickel hydroxides and related materials: a review of their structures, synthesis and properties.

    David S. Hall;David J. Lockwood;Christina Bock;Barry R. MacDougall

  • Quantum confinement and light emission in SiO2/Si superlattices

    Z. H. Lu;D. J. Lockwood;J.-M. Baribeau

  • Quantum confined luminescence in Si/SiO2 superlattices.

    D. J. Lockwood;Z. H. Lu;J.-M. Baribeau

  • Light Scattering in Magnetic Solids

    Michael G. Cottam;David J. Lockwood

  • Raman and Infrared Spectroscopy of α and β Phases of Thin Nickel Hydroxide Films Electrochemically Formed on Nickel

    David S Hall;David J Lockwood;Shawn Poirier;Christina Bock

  • Quantum confined luminescence in Si/SiO2 superlattices.

    Unknown

  • Nanocrystalline-silicon superlattice produced by controlled recrystallization

    L. Tsybeskov;K. D. Hirschman;S. P. Duttagupta;M. Zacharias

  • Optical properties of porous silicon

    D.J. Lockwood

  • Ordering and Self-organization in Nanocrystalline Silicon

    G. F. Grom;D. J. Lockwood;J. P. McCaffrey;H. J. Labbé

  • Quantum confinement in Si and Ge nanostructures: Theory and experiment

    Eric G. Barbagiovanni;David J. Lockwood;Peter J. Simpson;Lyudmila V. Goncharova

  • Thermal Hydrosilylation of Undecylenic Acid with Porous Silicon

    Rabah Boukherroub;J. T. C. Wojtyk;Danial D. M. Wayner;David J. Lockwood

  • Spin-wave quantization in ferromagnetic nickel nanowires.

    Z. K. Wang;M. H. Kuok;S. C. Ng;D. J. Lockwood

  • Quantum confinement in Si and Ge nanostructures

    Eric G. Barbagiovanni;David J. Lockwood;Peter J. Simpson;Lyudmila V. Goncharova

  • Light Scattering in Semiconductor Structures and Superlattices

    David J. Lockwood;Jeff F. Young

  • Light emission in silicon : from physics to devices

    David J. Lockwood

  • Strain-shift coefficients for phonons in Si1-xGex epilayers on silicon.

    D. J. Lockwood;J.-M. Baribeau

  • Photoluminescence in amorphous Si/SiO2 superlattices fabricated by magnetron sputtering

    Brian T. Sullivan;David J. Lockwood;Henri J. Labbé;Z.‐H. Lu

  • Ge dots and nanostructures grown epitaxially on Si

    J.-M. Baribeau;X. Wu;N. L. Rowell;D. J. Lockwood

  • Ideal passivation of luminescent porous silicon by thermal, noncatalytic reaction with alkenes and aldehydes

    R. Boukherroub;S. Morin;D. D. M. Wayner;F. Bensebaa

  • Optical properties of porous silicon

    D. J. Lockwood;G. C. Aers;L. B. Allard;B. Bryskiewicz

  • Thermal stability of the [(Si)m/(Ge)n]p superlattice interface

    T. E. Jackman;J.-M. Baribeau;D. J. Lockwood;Philipp Aebi

  • The Physics of Semiconductors: 22nd International Conference

    David J. Lockwood

Frequent Co-Authors

Xiaohua Wu
Xiaohua Wu University of Geneva
Rabah Boukherroub
Rabah Boukherroub University of Lille
Philippe M. Fauchet
Philippe M. Fauchet Vanderbilt University
Patrik Schmuki
Patrik Schmuki University of Erlangen-Nuremberg
Theodore I. Kamins
Theodore I. Kamins Stanford University
Danial D. M. Wayner
Danial D. M. Wayner National Research Council Canada
Philip J. Poole
Philip J. Poole National Research Council Canada
Zheng-Hong Lu
Zheng-Hong Lu University of Toronto
David Grosso
David Grosso Aix-Marseille University
Z. R. Wasilewski
Z. R. Wasilewski University of Waterloo

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