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Materials Science

D-Index
54
Citations
17437
World Ranking
8758
National Ranking
2140

Vasili Perebeinos publication distribution in Materials Science in 2026

The chart shows the distribution of publications by all Research.com ranked scientists in the field of Materials Science in 2026. The highlighted bar marks where Vasili Perebeinos sits on this spectrum.

50–69 publications: 28 scientists 70–89 publications: 152 scientists 90–109 publications: 356 scientists 110–129 publications: 487 scientists 130–149 publications: 723 scientists 150–169 publications: 835 scientists 170–189 publications: 850 scientists 190–209 publications: 891 scientists 210–229 publications: 862 scientists 230–249 publications: 766 scientists 250–269 publications: 726 scientists 270–289 publications: 665 scientists 290–309 publications: 593 scientists 310–329 publications: 537 scientists 330–349 publications: 477 scientists 350–369 publications: 440 scientists 370–389 publications: 356 scientists 390–409 publications: 321 scientists 410–429 publications: 256 scientists 430–449 publications: 246 scientists 450–469 publications: 216 scientists 470–489 publications: 212 scientists 490–509 publications: 174 scientists 510–529 publications: 194 scientists 530–549 publications: 162 scientists 550–569 publications: 131 scientists 570–589 publications: 111 scientists 590–609 publications: 103 scientists 610–629 publications: 99 scientists 630–649 publications: 77 scientists 650–669 publications: 92 scientists 670–689 publications: 56 scientists 690–709 publications: 53 scientists 710–729 publications: 53 scientists 730–749 publications: 38 scientists 750–769 publications: 52 scientists 770–789 publications: 43 scientists 790–809 publications: 38 scientists 810–829 publications: 34 scientists 830–849 publications: 25 scientists 850–869 publications: 18 scientists 870–889 publications: 20 scientists 890–909 publications: 24 scientists 910–929 publications: 27 scientists 930–949 publications: 20 scientists 950–969 publications: 17 scientists 970–989 publications: 10 scientists 990–1,009 publications: 16 scientists 1,010–1,029 publications: 13 scientists 1,030–1,049 publications: 12 scientists 1,050–1,069 publications: 9 scientists 1,070–1,089 publications: 8 scientists 1,090–1,109 publications: 7 scientists 1,110–1,129 publications: 9 scientists 1,130–1,149 publications: 2 scientists 1,150–1,162 publications: 5 scientists 1,163+ publications: 100 scientists
50 publications 1,163+

This scientist: 161 publications — 17th percentile

17% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 1,163 publications or more.

Vasili Perebeinos D-index placement in Materials Science in 2026

The chart shows the D-index (discipline H-index) distribution of Materials Science scientists ranked by Research.com in 2026. The highlighted bar marks where Vasili Perebeinos sits on this spectrum.

40–41 D-Index: 211 scientists 42–43 D-Index: 450 scientists 44–45 D-Index: 612 scientists 46–47 D-Index: 612 scientists 48–49 D-Index: 598 scientists 50–51 D-Index: 657 scientists 52–53 D-Index: 667 scientists 54–55 D-Index: 621 scientists 56–57 D-Index: 597 scientists 58–59 D-Index: 610 scientists 60–61 D-Index: 587 scientists 62–63 D-Index: 606 scientists 64–65 D-Index: 533 scientists 66–67 D-Index: 490 scientists 68–69 D-Index: 469 scientists 70–71 D-Index: 378 scientists 72–73 D-Index: 421 scientists 74–75 D-Index: 359 scientists 76–77 D-Index: 323 scientists 78–79 D-Index: 299 scientists 80–81 D-Index: 230 scientists 82–83 D-Index: 210 scientists 84–85 D-Index: 195 scientists 86–87 D-Index: 203 scientists 88–89 D-Index: 175 scientists 90–91 D-Index: 175 scientists 92–93 D-Index: 142 scientists 94–95 D-Index: 121 scientists 96–97 D-Index: 117 scientists 98–99 D-Index: 107 scientists 100–101 D-Index: 88 scientists 102–103 D-Index: 85 scientists 104–105 D-Index: 68 scientists 106–107 D-Index: 62 scientists 108–109 D-Index: 57 scientists 110–111 D-Index: 45 scientists 112–113 D-Index: 49 scientists 114–115 D-Index: 50 scientists 116–117 D-Index: 34 scientists 118–119 D-Index: 38 scientists 120–121 D-Index: 37 scientists 122–123 D-Index: 29 scientists 124–125 D-Index: 28 scientists 126–127 D-Index: 24 scientists 128–129 D-Index: 33 scientists 130–131 D-Index: 28 scientists 132–133 D-Index: 21 scientists 134–135 D-Index: 20 scientists 136–137 D-Index: 23 scientists 138–139 D-Index: 17 scientists 140–141 D-Index: 12 scientists 142–143 D-Index: 17 scientists 144–145 D-Index: 21 scientists 146–147 D-Index: 13 scientists 148–149 D-Index: 11 scientists 150–151 D-Index: 14 scientists 152–153 D-Index: 13 scientists 154–155 D-Index: 9 scientists 156–157 D-Index: 10 scientists 158–159 D-Index: 7 scientists 160–161 D-Index: 4 scientists 162–163 D-Index: 4 scientists 164 D-Index: 3 scientists 165+ D-Index: 98 scientists
40 D-Index 165+

This scientist: 54 D-Index — 32nd percentile

32% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 165 D-Index or more.

Research.com Recognitions

  • 2013 - Fellow of American Physical Society (APS) Citation For pioneering contributions to the theory of optical and transport properties of carbon nanotubes and graphene

Overview

Vasili Perebeinos is affiliated with the University at Buffalo, State University of New York in the United States. Their research primarily spans the fields of Materials Science and Engineering, with a specialized focus on Materials Chemistry and Electrical and Electronic Engineering. The work also touches on subfields such as Atomic and Molecular Physics, and Optics, Biomedical Engineering, and Electronic, Optical and Magnetic Materials.

The scientist's research topics include:

  • 2D Materials and Applications
  • Graphene Research and Applications
  • Perovskite Materials and Applications
  • Thermal Properties of Materials
  • Carbon Nanotubes in Composites
  • Chalcogenide Semiconductor Thin Films
  • Quantum Dots Synthesis and Properties

Vasili Perebeinos has published extensively, with notable frequent publication venues including:

  • arXiv (Cornell University)
  • Physical Review B
  • ACS Nano
  • Nanomaterials
  • Physical Review Letters

Some of their recent papers are:

  • "Two-Dimensional Cold Electron Transport for Steep-Slope Transistors," 2021, published in ACS Nano
  • "Tunable interlayer excitons and switchable interlayer trions via dynamic near-field cavity," 2023, published in Light Science & Applications
  • "Cs2TiI6 (Cs2TiIxBr6-x) Halide Perovskite Solar Cell and Its Point Defect Analysis," 2023, published in Nanomaterials
  • "Three-particle states and brightening of intervalley excitons in a doped MoS2 monolayer," 2020, published in Physical Review B
  • "Microscopic theory of exciton and trion polaritons in doped monolayers of transition metal dichalcogenides," 2022, published in npj Computational Materials

Collaborations form a key part of their research output. Frequent co-authors include:

  • Davoud Adinehloo
  • Yaroslav Zhumagulov
  • D. R. Gulevich
  • Junichiro Kono
  • Vyacheslav Semenenko

Vasili Perebeinos's contributions have been recognized with the award of Fellow of the American Physical Society (APS) in 2013, with the citation noting pioneering work in the theory of optical and transport properties of carbon nanotubes and graphene.

Best Publications

  • Carbon-based electronics.

    Phaedon Avouris;Zhihong Chen;Vasili Perebeinos

  • Carbon-nanotube photonics and optoelectronics

    Phaedon Avouris;Marcus Freitag;Vasili Perebeinos

  • The origins and limits of metal–graphene junction resistance

    Fengnian Xia;Vasili Perebeinos;Yu-ming Lin;Yanqing Wu

  • Scaling of excitons in carbon nanotubes.

    Vasili Perebeinos;J. Tersoff;Phaedon Avouris

  • Photocurrent imaging and efficient photon detection in a graphene transistor

    Fengnian Xia;Thomas Mueller;Roksana Golizadeh-Mojarad;Marcus Freitag

  • Structure and Electronic Transport in Graphene Wrinkles

    Wenjuan Zhu;Tony Low;Vasili Perebeinos;Ageeth A. Bol

  • Chemical doping and electron-hole conduction asymmetry in graphene devices.

    Damon B. Farmer;Roksana Golizadeh-Mojarad;Vasili Perebeinos;Yu-Ming Lin

  • Carrier scattering, mobilities, and electrostatic potential in monolayer, bilayer, and trilayer graphene

    Wenjuan Zhu;Vasili Perebeinos;Marcus Freitag;Phaedon Avouris

  • Energy dissipation in graphene field-effect transistors.

    Marcus Freitag;Mathias Steiner;Yves Martin;Vasili Perebeinos

  • Bright infrared emission from electrically induced excitons in carbon nanotubes.

    Jia Chen;Vasili Perebeinos;Marcus Freitag;James Tsang

  • Electron-phonon interaction and transport in semiconducting carbon nanotubes.

    Vasili Perebeinos;J. Tersoff;Phaedon Avouris

  • Radiative lifetime of excitons in carbon nanotubes.

    Vasili Perebeinos;J Tersoff;Phaedon Avouris

  • Inelastic scattering and current saturation in graphene

    Vasili Perebeinos;Phaedon Avouris

  • Thermal infrared emission from biased graphene

    Marcus Freitag;Hsin-Ying Chiu;Mathias Steiner;Vasili Perebeinos

  • Effect of exciton-phonon coupling in the calculated optical absorption of carbon nanotubes

    Vasili Perebeinos;J. Tersoff;Phaedon Avouris

  • Electrical observation of subband formation in graphene nanoribbons

    Yu-Ming Lin;Vasili Perebeinos;Zhihong Chen;Phaedon Avouris

  • Efficient narrow-band light emission from a single carbon nanotube p-n diode

    Thomas Mueller;Megumi Kinoshita;Megumi Kinoshita;Mathias Steiner;Vasili Perebeinos

  • Doping and phonon renormalization in carbon nanotubes

    J. C. Tsang;M. Freitag;V. Perebeinos;J. Liu

  • Controllable p-n Junction Formation in Monolayer Graphene Using Electrostatic Substrate Engineering

    Hsin-Ying Chiu;Vasili Perebeinos;Yu-Ming Lin;Phaedon Avouris

  • Hot Carrier Electroluminescence from a Single Carbon Nanotube

    Marcus Freitag;Vasili Perebeinos;Jia Chen;Aaron Stein

  • Atomic-scale transport in epitaxial graphene

    Shuai-Hua Ji;J. B. Hannon;R. M. Tromp;V. Perebeinos

Frequent Co-Authors

Phaedon Avouris
Phaedon Avouris IBM (United States)
Marcus Freitag
Marcus Freitag IBM (United States)
Jerry Tersoff
Jerry Tersoff IBM (United States)
Yu-Ming Lin
Yu-Ming Lin Taiwan Semiconductor Manufacturing Company (Taiwan)
Ageeth A. Bol
Ageeth A. Bol University of Michigan–Ann Arbor
Wenjuan Zhu
Wenjuan Zhu University of Illinois at Urbana-Champaign
Damon B. Farmer
Damon B. Farmer IBM (United States)
Tony Low
Tony Low University of Minnesota
Fengnian Xia
Fengnian Xia Yale University
Thomas Vogt
Thomas Vogt University of South Carolina

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