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Materials Science

D-Index
52
Citations
11495
World Ranking
9478
National Ranking
2293

Overview

Ageeth A. Bol is affiliated with the University of Michigan-Ann Arbor in the United States. Their research primarily covers the fields of Materials Science and Engineering, with a strong focus on subfields such as Materials Chemistry, Electrical and Electronic Engineering, Renewable Energy, Sustainability and the Environment, Biomedical Engineering, and Atomic and Molecular Physics, and Optics.

The scientist's work concentrates on various topics within materials and semiconductor research. These main topics include 2D Materials and Applications, MXene and MAX Phase Materials, ZnO doping and properties, Chalcogenide Semiconductor Thin Films, Ferroelectric and Negative Capacitance Devices, Semiconductor materials and devices, and Electrocatalysts for Energy Conversion.

Ageeth A. Bol has published in multiple academic journals, with frequent contributions to:

  • ACS Applied Nano Materials
  • arXiv (Cornell University)
  • Chemistry of Materials
  • ACS Applied Materials & Interfaces
  • 2D Materials

Recent papers by Ageeth A. Bol include:

  • Area-Selective Atomic Layer Deposition of Two-Dimensional WS2 Nanolayers, 2020, ACS Materials Letters
  • Large area, patterned growth of 2D MoS2 and lateral MoS2-WS2 heterostructures for nano- and opto-electronic applications, 2020, Nanotechnology
  • Atomic Layer Deposition of Al-Doped MoS2: Synthesizing a p-type 2D Semiconductor with Tunable Carrier Density, 2020, ACS Applied Nano Materials
  • Atomic Layer Deposition of Large-Area Polycrystalline Transition Metal Dichalcogenides from 100 °C through Control of Plasma Chemistry, 2022, Chemistry of Materials
  • Thickness and Morphology Dependent Electrical Properties of ALD-Synthesized MoS2 FETs, 2021, Advanced Electronic Materials

Co-authors who frequently collaborate with Ageeth A. Bol include W. M. M. Kessels, Marcel A. Verheijen, Jeff J. P. M. Schulpen, Jan P. Hofmann, and Miika Mattinen.

Best Publications

  • High-frequency, scaled graphene transistors on diamond-like carbon

    Yanqing Wu;Yu-ming Lin;Ageeth A. Bol;Keith A. Jenkins

  • Structure and Electronic Transport in Graphene Wrinkles

    Wenjuan Zhu;Tony Low;Vasili Perebeinos;Ageeth A. Bol

  • Long-lived Mn 2 + emission in nanocrystalline Z n S : M n 2 +

    A. A. Bol;A. Meijerink

  • State-of-the-art graphene high-frequency electronics.

    Yanqing Wu;Keith A. Jenkins;Alberto Valdes-Garcia;Damon B. Farmer

  • Photooxidation and Photobleaching of Single CdSe/ZnS Quantum Dots Probed by Room-Temperature Time-Resolved Spectroscopy

    Wilfried G. J. H. M. van Sark;Patrick L. T. M. Frederix;and Dave J. Van den Heuvel;Hans C. Gerritsen

  • The use of atomic layer deposition in advanced nanopatterning

    Ajm Adrie Mackus;AA Ageeth Bol;Wmm Erwin Kessels

  • Chemical doping of large-area stacked graphene films for use as transparent, conducting electrodes.

    Amal Kasry;Marcelo A. Kuroda;Marcelo A. Kuroda;Glenn J. Martyna;George S. Tulevski

  • Blueing, Bleaching, and Blinking of Single CdSe/ZnS Quantum Dots

    Wilfried G. J. H. M. van Sark;Patrick L. T. M. Frederix;Ageeth A. Bol;Hans C. Gerritsen

  • Blueing, bleaching, and blinking of single CdSe/ZnS quantum dots

    W.G.J.H.M. van Sark;P.L.Th.M. Frederix;A.A. Bol;H.C. Gerritsen

  • On the incorporation of trivalent rare earth ions in II-VI semiconductor nanocrystals

    Ageeth A. Bol;Rick van Beek;Andries Meijerink

  • Luminescence of nanocrystalline ZnS:Cu2+

    Ageeth A Bol;Joke Ferwerda;Jaap A Bergwerff;Andries Meijerink

  • Infrared spectroscopy of wafer-scale graphene.

    Hugen Yan;Fengnian Xia;Wenjuan Zhu;Marcus Freitag

  • Efficient narrow-band light emission from a single carbon nanotube p-n diode

    Thomas Mueller;Megumi Kinoshita;Megumi Kinoshita;Mathias Steiner;Vasili Perebeinos

  • High frequency graphene Voltage amplifier

    Shu Jen Han;Keith A. Jenkins;Alberto Valdes Garcia;Aaron D. Franklin

  • Three-terminal graphene negative differential resistance devices.

    Yanqing Wu;Damon B. Farmer;Wenjuan Zhu;Shu Jen Han

  • Imaging of the Schottky barriers and charge depletion in carbon nanotube transistors.

    Marcus Freitag;James C. Tsang;Ageeth Bol;Dongning Yuan

  • Influence of Oxygen Exposure on the Nucleation of Platinum Atomic Layer Deposition: Consequences for Film Growth, Nanopatterning, and Nanoparticle Synthesis

    Adriaan J. M. Mackus;Marcel A. Verheijen;Marcel A. Verheijen;Noémi Leick;Ageeth A. Bol

  • Atomic layer deposition of molybdenum oxide from (NtBu)2(NMe2)2Mo and O2 plasma

    Mfj Martijn Vos;B Bart Macco;Nfw Nick Thissen;AA Ageeth Bol

  • The Graphene-Gold Interface and Its Implications for Nanoelectronics

    Ravi S. Sundaram;Mathias Steiner;Hsin-Ying Chiu;Michael Engel

  • The origin of high activity of amorphous MoS2 in the hydrogen evolution reaction

    Longfei Wu;Alessandro Longo;Nelson Y. Dzade;Nelson Y. Dzade;Akhil Sharma

  • Luminescence of nanocrystalline ZnS:Pb2+

    Ageeth A. Bol;Andries Meijerink

Frequent Co-Authors

Marcel A. Verheijen
Marcel A. Verheijen Eindhoven University of Technology
Wilhelmus M. M. Kessels
Wilhelmus M. M. Kessels Eindhoven University of Technology
Andries Meijerink
Andries Meijerink Utrecht University
Jan P. Hofmann
Jan P. Hofmann Eindhoven University of Technology
Phaedon Avouris
Phaedon Avouris IBM (United States)
Wmm Erwin Kessels
Wmm Erwin Kessels Eindhoven University of Technology
Vasili Perebeinos
Vasili Perebeinos University at Buffalo, State University of New York
Marcus Freitag
Marcus Freitag IBM (United States)
Shu-Jen Han
Shu-Jen Han IBM (United States)
Damon B. Farmer
Damon B. Farmer IBM (United States)

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