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D-Index & Metrics

Materials Science

D-Index
52
Citations
11495
World Ranking
9476
National Ranking
2291

Ageeth A. Bol publication distribution in Materials Science in 2026

The chart shows the distribution of publications by all Research.com ranked scientists in the field of Materials Science in 2026. The highlighted bar marks where Ageeth A. Bol sits on this spectrum.

50–69 publications: 28 scientists 70–89 publications: 152 scientists 90–109 publications: 356 scientists 110–129 publications: 487 scientists 130–149 publications: 723 scientists 150–169 publications: 835 scientists 170–189 publications: 850 scientists 190–209 publications: 891 scientists 210–229 publications: 862 scientists 230–249 publications: 766 scientists 250–269 publications: 726 scientists 270–289 publications: 665 scientists 290–309 publications: 593 scientists 310–329 publications: 537 scientists 330–349 publications: 477 scientists 350–369 publications: 440 scientists 370–389 publications: 356 scientists 390–409 publications: 321 scientists 410–429 publications: 256 scientists 430–449 publications: 246 scientists 450–469 publications: 216 scientists 470–489 publications: 212 scientists 490–509 publications: 174 scientists 510–529 publications: 194 scientists 530–549 publications: 162 scientists 550–569 publications: 131 scientists 570–589 publications: 111 scientists 590–609 publications: 103 scientists 610–629 publications: 99 scientists 630–649 publications: 77 scientists 650–669 publications: 92 scientists 670–689 publications: 56 scientists 690–709 publications: 53 scientists 710–729 publications: 53 scientists 730–749 publications: 38 scientists 750–769 publications: 52 scientists 770–789 publications: 43 scientists 790–809 publications: 38 scientists 810–829 publications: 34 scientists 830–849 publications: 25 scientists 850–869 publications: 18 scientists 870–889 publications: 20 scientists 890–909 publications: 24 scientists 910–929 publications: 27 scientists 930–949 publications: 20 scientists 950–969 publications: 17 scientists 970–989 publications: 10 scientists 990–1,009 publications: 16 scientists 1,010–1,029 publications: 13 scientists 1,030–1,049 publications: 12 scientists 1,050–1,069 publications: 9 scientists 1,070–1,089 publications: 8 scientists 1,090–1,109 publications: 7 scientists 1,110–1,129 publications: 9 scientists 1,130–1,149 publications: 2 scientists 1,150–1,162 publications: 5 scientists 1,163+ publications: 100 scientists
50 publications 1,163+

This scientist: 159 publications — 17th percentile

17% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 1,163 publications or more.

Ageeth A. Bol D-index placement in Materials Science in 2026

The chart shows the D-index (discipline H-index) distribution of Materials Science scientists ranked by Research.com in 2026. The highlighted bar marks where Ageeth A. Bol sits on this spectrum.

40–41 D-Index: 211 scientists 42–43 D-Index: 450 scientists 44–45 D-Index: 612 scientists 46–47 D-Index: 612 scientists 48–49 D-Index: 598 scientists 50–51 D-Index: 657 scientists 52–53 D-Index: 667 scientists 54–55 D-Index: 621 scientists 56–57 D-Index: 597 scientists 58–59 D-Index: 610 scientists 60–61 D-Index: 587 scientists 62–63 D-Index: 606 scientists 64–65 D-Index: 533 scientists 66–67 D-Index: 490 scientists 68–69 D-Index: 469 scientists 70–71 D-Index: 378 scientists 72–73 D-Index: 421 scientists 74–75 D-Index: 359 scientists 76–77 D-Index: 323 scientists 78–79 D-Index: 299 scientists 80–81 D-Index: 230 scientists 82–83 D-Index: 210 scientists 84–85 D-Index: 195 scientists 86–87 D-Index: 203 scientists 88–89 D-Index: 175 scientists 90–91 D-Index: 175 scientists 92–93 D-Index: 142 scientists 94–95 D-Index: 121 scientists 96–97 D-Index: 117 scientists 98–99 D-Index: 107 scientists 100–101 D-Index: 88 scientists 102–103 D-Index: 85 scientists 104–105 D-Index: 68 scientists 106–107 D-Index: 62 scientists 108–109 D-Index: 57 scientists 110–111 D-Index: 45 scientists 112–113 D-Index: 49 scientists 114–115 D-Index: 50 scientists 116–117 D-Index: 34 scientists 118–119 D-Index: 38 scientists 120–121 D-Index: 37 scientists 122–123 D-Index: 29 scientists 124–125 D-Index: 28 scientists 126–127 D-Index: 24 scientists 128–129 D-Index: 33 scientists 130–131 D-Index: 28 scientists 132–133 D-Index: 21 scientists 134–135 D-Index: 20 scientists 136–137 D-Index: 23 scientists 138–139 D-Index: 17 scientists 140–141 D-Index: 12 scientists 142–143 D-Index: 17 scientists 144–145 D-Index: 21 scientists 146–147 D-Index: 13 scientists 148–149 D-Index: 11 scientists 150–151 D-Index: 14 scientists 152–153 D-Index: 13 scientists 154–155 D-Index: 9 scientists 156–157 D-Index: 10 scientists 158–159 D-Index: 7 scientists 160–161 D-Index: 4 scientists 162–163 D-Index: 4 scientists 164 D-Index: 3 scientists 165+ D-Index: 98 scientists
40 D-Index 165+

This scientist: 52 D-Index — 27th percentile

27% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 165 D-Index or more.

Overview

Ageeth A. Bol is affiliated with the University of Michigan-Ann Arbor in the United States. Their research primarily covers the fields of Materials Science and Engineering, with a strong focus on subfields such as Materials Chemistry, Electrical and Electronic Engineering, Renewable Energy, Sustainability and the Environment, Biomedical Engineering, and Atomic and Molecular Physics, and Optics.

The scientist's work concentrates on various topics within materials and semiconductor research. These main topics include 2D Materials and Applications, MXene and MAX Phase Materials, ZnO doping and properties, Chalcogenide Semiconductor Thin Films, Ferroelectric and Negative Capacitance Devices, Semiconductor materials and devices, and Electrocatalysts for Energy Conversion.

Ageeth A. Bol has published in multiple academic journals, with frequent contributions to:

  • ACS Applied Nano Materials
  • arXiv (Cornell University)
  • Chemistry of Materials
  • ACS Applied Materials & Interfaces
  • 2D Materials

Recent papers by Ageeth A. Bol include:

  • Area-Selective Atomic Layer Deposition of Two-Dimensional WS2 Nanolayers, 2020, ACS Materials Letters
  • Large area, patterned growth of 2D MoS2 and lateral MoS2-WS2 heterostructures for nano- and opto-electronic applications, 2020, Nanotechnology
  • Atomic Layer Deposition of Al-Doped MoS2: Synthesizing a p-type 2D Semiconductor with Tunable Carrier Density, 2020, ACS Applied Nano Materials
  • Atomic Layer Deposition of Large-Area Polycrystalline Transition Metal Dichalcogenides from 100 °C through Control of Plasma Chemistry, 2022, Chemistry of Materials
  • Thickness and Morphology Dependent Electrical Properties of ALD-Synthesized MoS2 FETs, 2021, Advanced Electronic Materials

Co-authors who frequently collaborate with Ageeth A. Bol include W. M. M. Kessels, Marcel A. Verheijen, Jeff J. P. M. Schulpen, Jan P. Hofmann, and Miika Mattinen.

Best Publications

  • High-frequency, scaled graphene transistors on diamond-like carbon

    Yanqing Wu;Yu-ming Lin;Ageeth A. Bol;Keith A. Jenkins

  • Structure and Electronic Transport in Graphene Wrinkles

    Wenjuan Zhu;Tony Low;Vasili Perebeinos;Ageeth A. Bol

  • Long-lived Mn 2 + emission in nanocrystalline Z n S : M n 2 +

    A. A. Bol;A. Meijerink

  • State-of-the-art graphene high-frequency electronics.

    Yanqing Wu;Keith A. Jenkins;Alberto Valdes-Garcia;Damon B. Farmer

  • Photooxidation and Photobleaching of Single CdSe/ZnS Quantum Dots Probed by Room-Temperature Time-Resolved Spectroscopy

    Wilfried G. J. H. M. van Sark;Patrick L. T. M. Frederix;and Dave J. Van den Heuvel;Hans C. Gerritsen

  • The use of atomic layer deposition in advanced nanopatterning

    Ajm Adrie Mackus;AA Ageeth Bol;Wmm Erwin Kessels

  • Chemical doping of large-area stacked graphene films for use as transparent, conducting electrodes.

    Amal Kasry;Marcelo A. Kuroda;Marcelo A. Kuroda;Glenn J. Martyna;George S. Tulevski

  • Blueing, Bleaching, and Blinking of Single CdSe/ZnS Quantum Dots

    Wilfried G. J. H. M. van Sark;Patrick L. T. M. Frederix;Ageeth A. Bol;Hans C. Gerritsen

  • Blueing, bleaching, and blinking of single CdSe/ZnS quantum dots

    W.G.J.H.M. van Sark;P.L.Th.M. Frederix;A.A. Bol;H.C. Gerritsen

  • On the incorporation of trivalent rare earth ions in II-VI semiconductor nanocrystals

    Ageeth A. Bol;Rick van Beek;Andries Meijerink

  • Luminescence of nanocrystalline ZnS:Cu2+

    Ageeth A Bol;Joke Ferwerda;Jaap A Bergwerff;Andries Meijerink

  • Infrared spectroscopy of wafer-scale graphene.

    Hugen Yan;Fengnian Xia;Wenjuan Zhu;Marcus Freitag

  • Efficient narrow-band light emission from a single carbon nanotube p-n diode

    Thomas Mueller;Megumi Kinoshita;Megumi Kinoshita;Mathias Steiner;Vasili Perebeinos

  • High frequency graphene Voltage amplifier

    Shu Jen Han;Keith A. Jenkins;Alberto Valdes Garcia;Aaron D. Franklin

  • Three-terminal graphene negative differential resistance devices.

    Yanqing Wu;Damon B. Farmer;Wenjuan Zhu;Shu Jen Han

  • Imaging of the Schottky barriers and charge depletion in carbon nanotube transistors.

    Marcus Freitag;James C. Tsang;Ageeth Bol;Dongning Yuan

  • Influence of Oxygen Exposure on the Nucleation of Platinum Atomic Layer Deposition: Consequences for Film Growth, Nanopatterning, and Nanoparticle Synthesis

    Adriaan J. M. Mackus;Marcel A. Verheijen;Marcel A. Verheijen;Noémi Leick;Ageeth A. Bol

  • Atomic layer deposition of molybdenum oxide from (NtBu)2(NMe2)2Mo and O2 plasma

    Mfj Martijn Vos;B Bart Macco;Nfw Nick Thissen;AA Ageeth Bol

  • The Graphene-Gold Interface and Its Implications for Nanoelectronics

    Ravi S. Sundaram;Mathias Steiner;Hsin-Ying Chiu;Michael Engel

  • The origin of high activity of amorphous MoS2 in the hydrogen evolution reaction

    Longfei Wu;Alessandro Longo;Nelson Y. Dzade;Nelson Y. Dzade;Akhil Sharma

  • Luminescence of nanocrystalline ZnS:Pb2+

    Ageeth A. Bol;Andries Meijerink

Frequent Co-Authors

Marcel A. Verheijen
Marcel A. Verheijen Eindhoven University of Technology
Wilhelmus M. M. Kessels
Wilhelmus M. M. Kessels Eindhoven University of Technology
Andries Meijerink
Andries Meijerink Utrecht University
Jan P. Hofmann
Jan P. Hofmann Eindhoven University of Technology
Phaedon Avouris
Phaedon Avouris IBM (United States)
Wmm Erwin Kessels
Wmm Erwin Kessels Eindhoven University of Technology
Vasili Perebeinos
Vasili Perebeinos University at Buffalo, State University of New York
Marcus Freitag
Marcus Freitag IBM (United States)
Shu-Jen Han
Shu-Jen Han IBM (United States)
Damon B. Farmer
Damon B. Farmer IBM (United States)

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